Search NASA⌕ Search

SEARCH · Search NASA

Results for “electronic resistance”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 217 records · Page 12
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Tailoring Microstructure and Mechanical Properties of Additively-Manufactured Ti6Al4V Using Post Processing

Additively-manufactured Ti-6Al-4V (Ti64) exhibits high strength but in some cases inferior elongation to those of conventionally manufactured materials. Post-processing of additively manufactured Ti64 components is investigated to modify the mechanical properties for specific applications while still utilizing the benefits of the additive manufacturing process. The mechanical properties and fatigue resistance of Ti64 samples made by electron beam melting were tested in the as-built state. Several heat treatments (up to 1000 °C) were performed to study their effect on the microstructure and mechanical properties. Phase content during heating was tested with high reliability by neutron diffraction at Los Alamos National Laboratory. Two different hot isostatic pressings (HIP) cycles were tested, one at low temperature (780 °C), the other is at the standard temperature (920 °C). The results show that lowering the HIP holding temperature retains the fine microstructure (~1% β phase) and the 0.2% proof stress of the as-built samples (1038 MPa), but gives rise to higher elongation (~14%) and better fatigue life. The material subjected to a higher HIP temperature had a coarser microstructure, more residual β phase (~2% difference), displayed slightly lower Vickers hardness (~15 HV10N), 0.2% proof stress (~60 MPa) and ultimate stresses (~40 MPa) than the material HIP’ed at 780 °C, but had superior elongation (~6%) and fatigue resistance. Heat treatment at 1000 °C entirely altered the microstructure (~7% β phase), yield elongation of 13.7% but decrease the 0.2% proof-stress to 927 MPa. The results of the HIP at 780 °C imply it would be beneficial to lower the standard ASTM HIP temperature for Ti6Al4V additively manufactured by electron beam melting.

36 MATERIALS SCIENCE↗
DOE OSTI2021

SiC and GaN Devices With Cryogenic Cooling

This article presents the cryogenically cooled application for wide bandgap (WBG) semiconductor devices. Characteristics of silicon carbide (SiC) and gallium nitride (GaN) at cryogenic temperatures are illustrated. SiC MOSFETs exhibit increased on-state resistance and slower switching speed at cryogenic temperatures. However, cryogenic cooling provides low ambient temperature environment and thus enables the SiC converter to operate at lower junction temperature to achieve higher efficiency compared to room temperature cooling. A cryogenically cooled MW-level SiC inverter prototype is developed and demonstrated the feasibility of operating high-power SiC converter with cryogenic cooling. GaN HEMTs exhibit more than five times on-state resistance reduction and faster switching speed at cryogenic temperatures which makes GaN HEMTs an excellent candidate for cryogenic power electronics applications. The significantly reduced on-state resistance of GaN devices provides the possibility to operate them at a current level much higher than rated current at cryogenic temperatures. A GaN double pulse test (DPT) circuit is constructed and demonstrated that GaN HEMTs can operate at nearly four times of rated current at cryogenic temperatures. Challenges of utilizing WBG device with cryogenic cooling are discussed and summarized.

42 ENGINEERING↗
DOE OSTI2024

Resistance of Boron Nitride Nanotubes to Radiation-Induced Oxidation

We present unprecedented results on the damage thresholds and pathways for boron nitride nanotubes (BNNT) under the influence of energetic electrons in an oxidative gas environment, using an environmental aberration-corrected electron microscope over a range of oxygen pressures. We observe a damage cascade process that resists damage until a higher electron dose, compared with carbon nanotubes, initiating at defect-free BNNT sidewalls and proceeding through the conversion from crystalline nanotubes to amorphous boron nitride (BN), resisting oxidation throughout. We compare with prior results on the oxidation of carbon nanotubes and present a model that attributes the onset of damage in both cases to a physisorbed oxygen layer that reduces the threshold for damage onset. Surprisingly, increased temperatures offer protection against damage, as do electron dose rates that significantly exceed the oxygen dose rates, and our model attributes both effects to a physisorbed oxygen population.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Extreme Fermi Surface Smearing in a Maximally Disordered Concentrated Solid Solution

We show that the Fermi surface can survive the presence of extreme compositional disorder in the equiatomic alloy Ni 0.25 Fe 0.25 Co 0.25 Cr 0.25 . Our high-resolution Compton scattering experiments reveal a Fermi surface which is smeared across a significant fraction of the Brillouin zone (up to 40% of $\frac{2π}{a}$). The extent of this smearing and its variation on and between different sheets of the Fermi surface have been determined, and estimates of the electron mean free path and residual resistivity have been made by connecting this smearing with the coherence length of the quasiparticle states.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Real-space visualization of a defect-mediated charge density wave transition

Here, we study the coupled charge density wave (CDW) and insulator-to-metal transitions in the 2D quantum material 1T-TaS 2 . By applying in situ cryogenic 4D scanning transmission electron microscopy with in situ electrical resistance measurements, we directly visualize the CDW transition and establish that the transition is mediated by basal dislocations (stacking solitons). We find that dislocations can both nucleate and pin the transition and locally alter the transition temperature T c by nearly ~75 K. This finding was enabled by the application of unsupervised machine learning to cluster five-dimensional, terabyte scale datasets, which demonstrate a one-to-one correlation between resistance—a global property—and local CDW domain-dislocation dynamics, thereby linking the material microstructure to device properties. This work represents a major step toward defect-engineering of quantum materials, which will become increasingly important as we aim to utilize such materials in real devices.

4D-STEM↗
DOE OSTI2023

Temperature, rf field, and frequency dependence performance evaluation of superconducting niobium half-wave coaxial cavity

Recent advancement in superconducting radio frequency cavity processing techniques, with diffusion of impurities within the RF penetration depth, resulted in high quality factor with increase in quality factor with increasing accelerating gradient. The increase in quality factor is the result of a decrease in the surface resistance as a result of nonmagnetic impurities doping and change in electronic density of states. The fundamental understanding of the dependence of surface resistance on frequency and surface preparation is still an active area of research. Here, we present the result of RF measurements of the TEM modes in a coaxial half-wave niobium cavity resonating at frequencies between 0.3 ? 1.3 GHz. The temperature dependence of the surface resistance was measured between 4.2 K and 1.6 K. The field dependence of the surface resistance was measured at 2.0 K. The baseline measurements were made after standard surface preparation by buffered chemical polishing.

Dhakal, P.↗
DOE OSTI2020

Activation Energy for End-of-Life Solder Bond Degradation: Thermal Cycling of Field-Aged PV Modules

The longevity of solar photovoltaic modules depends on the durability and reliability of their components, one of which is the solder bonds in interconnect ribbons. The solder joints experience stresses from thermal cycling and constant elevated temperatures (40 °C-70 °C) in regular field operation leading to thermo-mechanical fatigue and intermetallic compound formation. To study the end-of-life wear-out mechanisms and to obtain activation energy of solder bond degradation, here two field-aged modules from Arizona-a 21-year-old Solarex MSX60 module (with Sn62Pb36Ag2 at the solder joints) and an 18-year-old Siemens M55 module (with Sn60Pb40 at the solder joints)-underwent 800 and 400 modified thermal cycles, respectively. Using three heating blankets, each module had three temperature zones maintained at 85, 95, and 105 °C during the 15-min hot dwell time of the thermal cycle. Cell-level series resistance data obtained from three temperature zones enabled the calculation of activation energy for solder bond degradation for the MSX60 and the M55 modules to be 0.12 eV and 0.35 eV, respectively. From each temperature zone in both modules, busbar-solder samples were obtained, imaged through SEM, and analyzed with energy-dispersive X-ray spectroscopy. In the MSX60 module with traces of Ag in the solder material, phase segregation and growth were primarily observed at high temperatures. For M55 modules without Ag in the solder material, major phase segregation was observed in all temperature zones. The IMC thickness for both modules increased with increasing module temperature. The beneficial effect of Ag in solder material on mitigating solder bond degradation is presented.

14 SOLAR ENERGY↗
DOE OSTI2025

Nernst power factor and figure of merit in the compensated semimetal ScSb

Recently, topological semimetals have emerged as strong candidates for solid-state thermomagnetic refrigerators due to their enhanced Nernst effect. This enhancement arises from the combined contributions of the Berry-curvature-induced anomalous Nernst coefficient associated with topological bands and the normal Nernst effect resulting from synergistic electron-hole compensation. Generally, these two effects are intertwined in topological semimetals, making it challenging to evaluate them independently. Here, we report the observation of a high Nernst effect in the electron-hole compensated semimetal ScSb with topologically trivial electronic band structures. Remarkably, we find a high maximum Nernst power factor of 𝑃⁢𝐹 𝑁 ∼ 35 × 10 −4 W m −1 K −2 in ScSb. The Nernst thermopower (𝑆 𝑥⁢𝑦 ) exhibits a peak of ∼ 47 µ⁢V/K at 12 K and 14 T, yielding a Nernst figure of merit (𝑧 𝑁 ) of ∼ 28 × 10 −4 K −1 . Notably, despite its trivial electronic band structure, both the 𝑃⁢𝐹 𝑁 and 𝑧 𝑁 values of ScSb are comparable to those observed in topological semimetals with Dirac band dispersions. In conclusion, the origin of the large Nernst signal in ScSb is explained by compensated electron and hole carriers, through Hall resistivity measurements, angle-resolved photoemission spectroscopy, and density functional theory calculations.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2026

Recent efforts of vapour-phase strategies for EUV resist toward high- and hyper-NA extreme ultraviolet lithography

Extreme ultraviolet lithography (EUVL, λ = 13.5 nm) is critical for sub-1 nm technology nodes but remains constrained by inherent trade-offs among resolution, line-edge roughness (LER), and sensitivity. Stochastic effects originating from photon shot noise, low-energy secondary electron blur, and the random distribution of resist components further limit its advancement toward high numerical-aperture (NA, NA = 0.55) and hyper-NA (NA ≥0.75) EUVL. While the optimization of spin-on chemically amplified resists (CARs) continues, metal-oxide resists (MORs) have emerged as strong candidates for next-generation EUVL by incorporating metals with high EUV absorption coefficients, which enhances both resist sensitivity and etch resistance during pattern transfer. Besides spin-coating, recent advances in vapour-phase techniques, such as vapour-phase infiltration (VPI), chemical vapour deposition (CVD), and molecular atomic layer deposition (MALD), offer promising pathways to achieve new resist platforms, such as dry resists, that satisfy the stringent thickness and uniformity requirements of next-generation EUVL. These methods enable the direct incorporation of metal species into existing resist matrices or the formation of hybrid inorganic–organic resist platforms, thereby improving film uniformity, etch durability, and pattern fidelity while mitigating stochastic defects. This review highlights the latest advancements in vapour-phase-synthesized EUV resists, emphasizing material design, lithographic performance, and the underlying exposure mechanisms. Although still emerging, vapour-phase strategies are paving the way for an all-dry integration framework that could improve EUV patterning workflows and meet the demands of future technology nodes.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Conventional superconductivity in single-crystalline BiPt

Binary Bi-Pd/Pt systems have attracted a lot of interest because of their topologically nontrivial nature along with superconductivity. We report the structural and superconducting properties of high-quality single-crystalline BiPt using a comprehensive range of experimental techniques, including X-ray diffraction, electron microscopy, muon spin rotation/relaxation (𝜇⁢SR), magnetization, resistivity, and heat capacity. Our findings establish that BiPt is a weak type-II superconductor with a transition temperature (𝑇 𝑐 ) of 1.2 K which exhibits pronounced anisotropic superconducting characteristics attributed to its hexagonal crystal structure. Magnetization and electronic transport studies reveal that BiPt lies within the dirty limit, while 𝜇⁢SR and heat capacity data indicate conventional 𝑠-wave superconductivity that maintains time-reversal symmetry. Here, this work provides valuable insights into the pairing symmetry and superconducting mechanism of topologically trivial BiPt, a sound comparison system for other Bi-based topologically nontrivial superconductors.

Demagnetization↗
DOE OSTI2025

Investigation of magnetic and electrical transport properties of YMB 4 (M = Cr, Fe, and Co) compounds

We have studied the structural, magnetic, and electrical transport properties of the YMB 4 series of compounds (M= Cr, Fe, and Co). These materials exhibit high stability and possess notable refractory and thermoelectric properties. Furthermore, recent theoretical predictions suggest that some of these compounds may display quantum magnetism and dimer formation among the magnetic ions. We have synthesized almost single phase YMB 4 compounds in the orthorhombic crystal structure (space group Pbam) using arc-melting and annealing. The Rietveld analysis of the room-temperature X-ray diffraction patterns reveals a clear change in the lattice parameter c, which correlates with the atomic radii of Cr, Fe, and Co. The temperature variation of resistivity measured between 2 K and 300 K reveals a metallic electron transport in all three YMB 4 compounds. However, no abrupt change in resistivity due to structural or magnetic phase transitions is observed. Additionally, a weak positive magnetoresistance of 1%–2% has been measured at 2.5 K, the contribution from the metallic impurity cannot be ruled out. The carrier concentration, on the order of 10 21 cm −3 , has been determined using conventional Hall measurements. The thermomagnetic curves recorded between 2 K and 350 K reveal the non-magnetic behavior of all these compounds. However, a small magnetic moment from paramagnetic/ferromagnetic impurity phases is detected at low temperatures. Above room temperature, no magnetic transition associated with the breaking of a dimer is observed.

borides↗
DOE OSTI2020

Understanding resistances in capacitive deionization devices

The desalination characteristics of capacitive deionization (CDI) are significantly impacted by the cell resistance. Here we apply electrochemical impedance spectroscopy (EIS) to analyze the resistive properties of a CDI device, which include EIS measurements on a complete assembled cell (in two wire mode) and EIS measurements with additional contacts to decouple electrode/electrolyte and contact impedances (four wire mode). These measurements shed light on the interface between current collector and electrode as well as the internal capacitive and resistive elements of the cell. With two-wire and four-wire EIS measurements, we find that the often observed high-frequency arc(s) in the impedance spectra can be due to contact effects and/or an internal ionic-transfer resistance that is locally in parallel with macropore wall capacitance. In some cases, the two associated arcs in the Nyquist plot are overlapping and present simultaneously, making their identification in the EIS spectra difficult unless both two-wire and four-wire measurements are made. Despite causing a large high-frequency arc in the Nyquist plot, we find that the apparent internal ionic-transfer resistance is negligible compared to the resistances of the electrode, separator, and external electronic components. Here, an investigation of the contact impedance between the electrode and current collector reveals a parallel RC arc that can grow over time if an improper material is used (e.g., titanium). In our system, the electrode ionic resistance dominates the total Ohmic power dissipation, which has implications for scale-up of CDI systems and future improvements of cell design.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Varistors: A Useful Tool for Superconducting Magnet Quench Protection

A perfect varistor is a constant voltage resistor as a function of current through the resistor. A perfect varistor can't exist, because its resistance would be infinite at zero current. In electronic devices, varistors are often used as surge protectors. A varistor can be used in place of an ordinary resistor as the discharge resistance across superconducting coil sections. When used this way, the integral of I 2 dt during the discharge can be reduced by almost one third. When a varistor is used for quench protection of coils that are coupled to shorted secondary circuits the integral of I 2 dt can be reduced much more. Furthermore, this can be a key factor when coil current densities and stored energies are high as in many potential HTS magnet systems. This paper discusses the types of varistors that are commercially available and their characteristics.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Selective solid-state isolation of NMR circuit elements using back-to-back field effect transistors

Nuclear Magnetic Resonance (NMR) electronics that employ selective solid-state isolation of circuit elements can include solid-state switches, such as back-to-back Field Effect Transistor (FET) pairs, and isolated gate drive electronics adapted to operate the solid-state switches in order to selectively decouple induction coils from receive electronics. The solid-state switches can be placed in series to achieve higher standoff voltages, and can be configured for low on resistance and short switching times. The gate drive electronics can include electrical isolation components adapted to enhance standoff voltages and reduce electrical noise at the selectively isolated receive electronics.

Walsh, David O.↗
DOE OSTI2026

Elucidating interfacial active sites in ruthenium–boron nitride nanotube catalysts for efficient low-temperature ammonia-to-hydrogen conversion

Tailoring the interaction between metal nanoparticles and catalyst support presents a prominent strategy to enhance both the activity and durability in hydrogen (H 2 ) production catalysts. In this work, ruthenium nanoparticles (NPs) supported on boron nitride nanotubes (Ru/BNNT) are introduced as efficient and thermally robust catalysts for low-temperature ammonia (NH 3 ) decomposition. The unique curvature and ionic nature of BNNTs enable uniform Ru dispersion and metal-support interactions (MSIs), resulting in exceptional H 2 generation efficiency and long-term operational stability. In-situ transmission electron microscopy (TEM) reveals remarkable thermal resistance of Ru/BNNT with minimal nanoparticle sintering, while density functional theory (DFT) calculations uncover a dual-site mechanism in which interfacial Ru atoms promote NH 3 dissociation and adjacent Ru sites facilitate 2H* recombination and H 2 desorption. This cooperative interaction between metal NPs and the BNNT support underpins the outstanding catalytic performance and durability observed. In conclusion, the findings highlight the strategic potential of BNNTs as versatile supports for high-performance and stable catalysts in sustainable H 2 energy conversion and related catalytic processes.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Charge-Density-Wave Thin-Film Devices Printed with Chemically Exfoliated 1T-TaS 2 Ink

In this work, we report on the preparation of inks containing fillers derived from quasi-two-dimensional charge-density-wave materials, their application for inkjet printing, and the evaluation of their electronic properties in printed thin-film form. The inks were prepared by liquid-phase exfoliation of CVT-grown 1T-TaS 2 crystals to produce fillers with nm-scale thickness and μm-scale lateral dimensions. Exfoliated 1T-TaS 2 was dispersed in a mixture of isopropyl alcohol and ethylene glycol to allow fine-tuning of filler particles thermophysical properties for inkjet printing. The temperature-dependent electrical and current fluctuation measurements of printed thin films demonstrated that the charge-density-wave properties of 1T-TaS 2 are preserved after processing. The functionality of the printed thin-film devices can be defined by the nearly commensurate to the commensurate charge-density-wave phase transition of individual exfoliated 1T-TaS 2 filler particles rather than by electron-hopping transport between them. The obtained results are important for the development of printed electronics with diverse functionality achieved by the incorporation of quasi-two-dimensional van der Waals quantum materials.

1T-TaS2↗
DOE OSTI2020

Molecular beam epitaxy of the magnetic Kagome metal FeSn on LaAlO 3 (111)

Materials with Kagome layers are expected to give rise to rich physics arising from band structures with topological properties, spin liquid behavior, and the formation of Skyrmions. Until now, most work on Kagome materials has been performed on bulk samples due to difficulties in thin film synthesis. Here, by using molecular beam epitaxy, layered Kagome-structured FeSn films are synthesized on the (111) oriented LaAlO3 substrate. Both in situ and ex situ characterizations indicate that these films are highly crystalline and c-axis oriented, with atomically smooth surfaces. The films grow as disconnected islands, with lateral dimensions on the micron meter scale. By patterning Pt electrodes using a focused electron beam, the longitudinal and transverse resistance of single islands have been measured in magnetic fields. Our work opens a pathway for exploring mesoscale transport properties in thin films of Kagome materials and related devices.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Radio frequency electrical resistance measurement under destructive pulsed magnetic fields

We developed a resistance measurement using radio frequency reflection to investigate the electrical transport characteristics under destructive pulsed magnetic fields above 100 T. A sample stage consisting of a homemade flexible printed circuit reduced the noise caused by the induced voltage from the pulsed magnetic fields, improving the accuracy of the measurements of the reflected waves. From the obtained reflectance data, the absolute value of the magnetoresistance was successfully determined by analyzing the phase with admittance charts. In conclusion, these developments enable more accurate and comprehensive measurements of electrical resistance in pulsed magnetic fields.

47 OTHER INSTRUMENTATION↗