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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 217 records · Page 12
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Evidence for electronic signature of a magnetic transition in the topological magnet HoSbTe

Topological insulators with intrinsic magnetic order are emerging as an exciting platform to realize fundamentally new excitations from topological quantum states of matter. To study these systems and their physics, people have proposed a variety of magnetic topological insulator systems, including HoSbTe, an antiferromagnetic weak topological insulator candidate. Here, in this work, we use scanning tunneling microscopy to probe the electronic structure of HoSbTe with antiferromagnetic and ferromagnetic orders that are tuned by applying an external magnetic field. Although around the Fermi energy we find minor differences between the quasiparticle interferences under the ferromagnetic and antiferromagnetic orders, deep inside the valance region, a quasiparticle interference signal emerges with ferromagnetism. This observation is consistent with our first-principles calculations indicating the magnetism-driven transition of the electronic states in this spin-orbit coupled topological magnet.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Short-Range Crystalline Order-Tuned Conductivity in Cr 2 Si 2 Te 6 van der Waals Magnetic Crystals

Two-dimensional magnetic materials (2DMMs) are significant not only for studies on the nature of 2D long-range magnetic order but also for future spintronic devices. Of particular interest are 2DMMs where spins can be manipulated by electrical conduction. Whereas Cr 2 Si 2 Te 6 exhibits magnetic order in few-layer crystals, its large band gap inhibits electronic conduction. Here we show that the defect-induced short-range crystal order in Cr 2 Si 2 Te 6 , on the length scale below 0.6 nm, induces a substantially reduced band gap and robust semiconducting behavior down to 2 K that turns to metallic above 10 GPa. Our results in this work will be helpful in designing conducting states in 2DMMs and call for spin-resolved measurement of the electronic structure in exfoliated ultrathin crystals.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Prediction of orbital-selective Mott phases and block magnetic states in the quasi-one-dimensional iron chain Ce 2 O 2 FeSe 2 under hole and electron doping

The recent detailed study of quasi-one-dimensional iron-based ladders, with the 3d iron electronic density n=6, has unveiled surprises, such as orbital-selective phases. However, similar studies for n=6 iron chains are still rare. Here a three-orbital electronic Hubbard model was constructed to study the magnetic and electronic properties of the quasi-one-dimensional n=6 iron chain Ce 2 O 2 FeSe 2 , with focus on the effect of doping. Specifically, introducing the Hubbard U and Hund J H couplings and studying the model via the density matrix renormalization group, we report the ground-state phase diagram varying the electronic density away from n=6. For the realistic Hund coupling J H /U=1/4, several electronic phases were obtained, including a metal, orbital-selective Mott, and Mott insulating phases. Doping away from the parent phase, the competition of many tendencies leads to a variety of magnetic states, such as ferromagnetism, as well as several antiferromagnetic and magnetic “block” phases. In the hole-doping region, two different interesting orbital-selective Mott phases were found: OSMP1 (with one localized orbital and two itinerant orbitals) and OSMP2 (with two localized orbitals and one itinerant orbital). Moreover, charge disproportionation phenomena were found in special doping regions. We argue that our predictions can be tested by simple modifications in the original chemical formula of Ce 2 O 2 FeSe 2 .

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Twisted bilayer graphene. IV. Exact insulator ground states and phase diagram

Here, we derive the exact insulator ground states of the projected Hamiltonian of magic-angle twisted bilayer graphene (TBG) flat bands with Coulomb interactions in various limits, and study the perturbations away from these limits. We define the (first) chiral limit where the AA stacking hopping is zero, and a flat limit with exactly flat bands. In the chiral-flat limit, the TBG Hamiltonian has a U(4) × U(4) symmetry, and we find that the exact ground states at integer filling – 4 ≤ $\textit{ν}$ ≤ 4 relative to charge neutrality are Chern insulators of Chern numbers $ν_C$ = 4 – |$\textit{ν}$ |, 2 – |$\textit{ν}$ |, $\cdots$, |$\textit{ν}$ | – 4, all of which are degenerate. This confirms recent experiments where Chern insulators are found to be competitive low-energy states of TBG. When the chiral-flat limit is reduced to the nonchiral-flat limit which has a U(4) symmetry, we find $\textit{ν}$ = 0 , ± 2 has exact ground states of Chern number 0, while $\textit{ν}$ = ±1, ± 3 has perturbative ground states of Chern number $ν_C$ = ± 1, which are U(4) ferromagnetic. In the chiral-nonflat limit with a different U(4) symmetry, different Chern number states are degenerate up to second-order perturbations. In the realistic nonchiral-nonflat case, we find that the perturbative insulator states with Chern number $ν_C$ = 0 (0 < |$ν_C$| < 4 – |$\textit{ν}$ |) at integer fillings $\textit{ν}$ are fully (partially) intervalley coherent, while the insulator states with Chern number |$ν_C$| = 4 – |$\textit{ν}$ | are valley polarized. However, for 0 < |$ν_C$| ≤ 4 – |$\textit{ν}$ |, the fully intervalley coherent states are highly competitive (0.005 meV/electron higher). At nonzero magnetic field |$\textit{B}$ | > 0, a first-order phase transition for $\textit{ν}$ = ± 1, ± 2 from Chern number $ν_C$ = sgn ($\textit{νB}$)(2 – |$\textit{ν}$ |) to $ν_C$ = sgn ($\textit{νB}$)(4 – |$\textit{ν}$ |) is expected, which agrees with recent experimental observations. Lastly, the TBG Hamiltonian reduces into an extended Hubbard model in the stabilizer code limit.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Negligible spin–charge conversion in Bi films and Bi/Ag(Cu) bilayers

Spin pumping experiments using ferromagnetic metals have reported highly efficient spin–charge conversion in Bi and at the Bi/Ag interface, possibly due to the inverse Rashba–Edelstein effect. However, longitudinal spin Seebeck effect experiments using the yttrium iron garnet ferrimagnetic insulator in Bi films and Bi/Ag bilayers do not show evidence of appreciable spin-to-charge conversion except the large Nernst signal inherent to Bi. These contrasting conclusions highlight the differences between magnetic metals and magnetic insulators as spin current injectors. Only the detected voltages that adhere to the inverse spin Hall effect of j C = (2e/h)θ SH j S x σ are due to spin currents.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Spectroscopic evidence of intra-unit-cell charge redistribution in a charge-neutral magnetic topological insulator

The magnetic topological insulator MnBi 6 Te 10 has emerged as a promising candidate for realizing the quantum anomalous Hall effect (QAHE), owing to its ability to retain ferromagnetism through precise control of anti-site defects. The next important task for realizing the QAHE is to tune the chemical potential into the energy gap formed by the broken time-reversal symmetry. Here we reveal an intra-unit-cell charge redistribution even when the overall doping suggests a near-charge-neutral condition. By performing time- and angle-resolved photoemission spectroscopy (trARPES) on the optimally 18% Sb-doped MnBi 6 Te 10 , we observe transient surface photovoltage (SPV) effects on both the MnBi 2 Te 4 and single-Bi 2 Te 3 terminations. Furthermore, we observe a time-dependent splitting of the band structure indicating multiple SPV shifts with different magnitudes. This observation suggests that adjacent plateaus with nominally the same terminating layer exhibit a strong intra-unit-cell charge redistribution, resulting in spontaneous electrical polarization. This is consistent with static micro-ARPES measurements revealing significant doping deviations from the charge-neutral configuration. Our findings underscore the challenges of engineering the family of Mn-Bi-Te materials to realize QAHE purely through chemical doping. Achieving the desired topological quantum phase requires both a uniform carrier doping and a ferromagnetic ground state. Furthermore, the light-induced polarization within each unit cell of ferromagnetic Mn(Bi 0.82 Sb 0.18 ) 6 Te 10 may open new possibilities for optoelectronic and spintronics.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2024

Antiferromagnetic V 2 ⁢O 3 based exchange coupling

Vanadium sesquioxide (V 2 ⁢O 3 ) is a strongly correlated electronic material that famously undergoes a triple coupled first-order transition where it transitions from a paramagnetic metal with a rhombohedral structure at high temperature to an antiferromagnetic insulator with a monoclinic structure. While several studies have used one of both electronic and structural transitions to control the properties of a heterostructure, evidence of magnetic coupling has notoriously yet to be found. In this paper, we report on a robust magnetic coupling between the antiferromagnetic (AFM) V 2 ⁢O 3 and ferromagnetic (FM) Permalloy (Py) layers that results in a significant exchange bias and strain-induced coercivity enhancement. We provide a temperature and angle-dependent study of magnetic properties, which clearly indicates exchange bias at the AFM/FM interface that appears at the onset of the metal-insulator transition. The magnitude of the exchange bias is strongest when the field is applied along the [001] V 2 ⁢O 3 crystallographic orientation which corresponds to an AFM spin configuration on the [110] surface. Here, this opens the door to designing and implementing novel functionalities in transition metal oxide-based computing using the connection between magnetism and the metal-insulator transition.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Monolayer 1T-LaN 2 : Dirac spin-gapless semiconductor of p -state and Chern insulator with a high Chern number

Two-dimensional transition-metal dinitrides have attracted considerable attention in recent years due to their rich magnetic properties. Here, we focus on rare-earth-metal elements and propose a monolayer of lanthanum dinitride with a 1T structural phase, 1T-LaN 2 . Using first-principles calculations, we systematically investigated the structure, stability, magnetism, and band structure of this material. It is a flexible and stable monolayer exhibiting a low lattice thermal conductivity, which is promising for future thermoelectric devices. Here, the monolayer shows the ferromagnetic ground state with a spin-polarized band structure. Two linear spin-polarized bands cross at the Fermi level forming a Dirac point, which is formed by the p atomic orbitals of the N atoms, indicating that monolayer 1T-LaN 2 is a Dirac spin-gapless semiconductor of p-state. When the spin–orbit coupling is taken into account, a large nontrivial indirect bandgap (86/354 meV) can be opened at the Dirac point, and three chiral edge states are obtained, corresponding to a high Chern number of C = 3, implying that monolayer 1T-LaN 2 is a Chern insulator. Importantly, this kind of band structure is expected to occur in more monolayers of rare-earth-metal dinitride with a 1T structural phase.

2D materials↗
DOE OSTI2025

Low damping (111) oriented lithium aluminum ferrite thin films for spin wave applications

Spin wave-based spintronics are an alternative to conventional electronics due to their potential for efficient energy consumption, improved processing speed, and smaller device dimensions. Low damping magnetic insulators provide the medium for efficient propagation of spin waves for information transfer. Here, we have synthesized by pulsed laser deposition epitaxial spinel structure ferrite thin films of Li 0.5 (Al 1.0 Fe 1.5 )O 4 (LAFO) on (111)-oriented MgAl 2 O 4 that support isotropic magnon propagation in the film plane. Our ferromagnetic resonance measurements show low magnetic damping with a typical Gilbert damping parameter of α = 0.006 and weak-spin–orbit coupling with g = 2.02. These films have low effective magnetization, μ o M eff = 20 mT, similar to that of yttrium iron garnet, the gold standard of low loss magnetic insulators. Our findings show that LAFO is a good candidate as a spin wave medium since it can be grown at low temperatures in different crystal orientations.

Takana, Lerato [Stanford Univ., CA (United States)↗
DOE OSTI2024

Multiferroicity and Topology in Twisted Transition Metal Dichalcogenides

Van der Waals heterostructures have recently emerged as an exciting platform for investigating the effects of strong electronic correlations, including various forms of magnetic or electrical orders. Here, we perform an unbiased exact diagonalization study of the effects of interactions on topological flat bands of twisted transition metal dichalcogenides (TMDs) at odd integer fillings. For hole-filling ν h = 1 , we find that the Chern insulator phase, expected from interaction-induced spin-valley polarization of the bare bands, is quite fragile, and gives way to spontaneous multiferroic order—coexisting ferroelectricity and ferromagnetism, in the presence of long-range Coulomb repulsion. We provide a simple real-space picture to understand the phase diagram as a function of interaction range and strength. Our findings establish twisted TMDs as a novel and highly tunable platform for multiferroicity, and we outline a potential route towards electrical control of magnetism in the multiferroic phase. Published by the American Physical Society 2024

Abouelkomsan, Ahmed (ORCID:0000000247873357)↗
DOE OSTI2021

Twisted bilayer graphene. VI. An exact diagonalization study at nonzero integer filling

Using exact diagonalization, we research the projected Hamiltonian with the Coulomb interaction in the eight flat bands of first magic angle twisted bilayer graphene. Employing the U(4) [U(4) × U(4)] symmetries in the nonchiral (chiral) flat band limit, we reduced the Hilbert space to an extent that allows for study around ν = ±3,±2,±1 fillings. In the first chiral limit w 0 /w 1 = 0, where w 0 (w 1 ) is the A A (AB) stacking hopping, we find that the ground states at these fillings are extremely well-described by Slater determinants in a so-called Chern basis, and the exactly solvable charge ±1 excitations found in Bernevig et al. [Phys. Rev. B 103, 205415 (2021)] are the lowest charge excitations up to system sizes 8 × 8 (for restricted Hilbert space) in the chiral-flat limit. We also find that the flat metric condition (FMC) used by Bernevig et al. [Phys. Rev. B 103, 205411 (2021)], Song et al. [Phys. Rev. B 103, 205412 (2021)], Bernevig et al. [Phys. Rev. B 103, 205413 (2021)], Lian et al. [Phys. Rev. B 103, 205414 (2021)], and Bernevig et al. [Phys. Rev. B 103, 205415 (2021)] for obtaining a series of exact ground states and excitations holds in a large parameter space. For ν = -3, the ground state is the spin and valley polarized Chern insulator with ν C = ±1 at w 0 /w 1 ≲ 0.9 (0.3) with (without) FMC. At ν = -2, we can only numerically access the valley polarized sector, and we find a spin ferromagnetic phase when w 0 /w 1 ≳ 0.5 t where t ϵ [0,1] is the factor of rescaling of the actual TBG bandwidth, and a spin singlet phase otherwise, confirming the perturbative calculation [Lian. et al., Phys. Rev. B 103, 205414 (2021), Bultinck et al., Phys. Rev. X 10, 031034 (2020)]. The analytic FMC ground state is, however, predicted in the intervalley coherent sector which we cannot access [Lian et al., Phys. Rev. B 103, 205414 (2021), Bultinck et al., Phys. Rev. X 10, 031034 (2020)]. For ν = -3 with/without FMC, when w 0 /w 1 is large, the finite-size gap Δ to the neutral excitations vanishes, leading to phase transitions. Further analysis of the ground state momentum sectors at ν = -3 suggests a competition among (nematic) metal, momentum M M (π) stripe and K M -CDW orders at large w 0 /w 1 .

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Observation of a linked-loop quantum state in a topological magnet

Quantum phases can be classified by topological invariants, which take on discrete values capturing global information about the quantum state. Over the past decades, these invariants have come to play a central role in describing matter, providing the foundation for understanding superfluids, magnets, the quantum Hall effect, topological insulators, Weyl semimetals and other phenomena. Here we report an unusual linking-number (knot theory) invariant associated with loops of electronic band crossings in a mirror-symmetric ferromagnet. Using state-of-the-art spectroscopic methods, we directly observe three intertwined degeneracy loops in the material's three-torus, T 3 , bulk Brillouin zone. We find that each loop links each other loop twice. Through systematic spectroscopic investigation of this linked-loop quantum state, we explicitly draw its link diagram and conclude, in analogy with knot theory, that it exhibits the linking number (2, 2, 2), providing a direct determination of the invariant structure from the experimental data. Here we further predict and observe, on the surface of our samples, Seifert boundary states protected by the bulk linked loops, suggestive of a remarkable Seifert bulk-boundary correspondence. Our observation of a quantum loop link motivates the application of knot theory to the exploration of magnetic and superconducting quantum matter.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Relationship between A-site cation and magnetic structure in 3d–5d–4f double perovskite iridates Ln 2 NiIrO 6 ( Ln = La, Pr, Nd)

We report a comprehensive investigation of Ln 2 NiIrO 6 (Ln=La, Pr, Nd) using thermodynamic and transport properties, neutron powder diffraction, resonant inelastic x-ray scattering, and density-functional theory (DFT) calculations to investigate the role of A-site cations on the magnetic interactions in this family of hybrid 3d–5d–4f compositions. Magnetic structure determination using neutron diffraction reveals antiferromagnetism for La 2 NiIrO 6 , a collinear ferrimagnetic Ni and Ir state that is driven to long-range antiferromagnetism upon the onset of Nd ordering in Nd 2 NiIrO 6 , and a noncollinear ferrimagnetic Ni and Ir sublattice interpenetrated by a ferromagnetic Pr lattice for Pr 2 NiIrO 6 . For Pr 2 NiIrO 6 , heat-capacity results reveal the presence of two independent magnetic sublattices, and transport resistivity indicates insulating behavior and a conduction pathway that is thermally mediated. Here, a first principles DFT calculation elucidates the existence of the two independent magnetic sublattices within Pr 2 NiIrO 6 and offers insight into the behavior in La 2 NiIrO 6 and Nd 2 NiIrO 6 . Resonant inelastic x-ray scattering is consistent with spin-orbit coupling splitting the t 2 g manifold of octahedral Ir 4+ into a J eff = 1/2 and J eff = 3/2 state for all members of the series considered.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Quantum Phase Engineering of Two-Dimensional Post-Transition Metals by Substrates: Toward a Room-Temperature Quantum Anomalous Hall Insulator

In this work, we propose a new strategy to engineer topological and magnetic properties of two-dimensional (2D) hexagonal lattices consisting of post-transition metals. Our first-principles calculations demonstrate that substrates serve as templates to form 2D lattices with high thermodynamic stability, where their topological properties as well as magnetic properties sensitively change as a function of lattice constants, i.e., the system undergoes a first-order phase transition from nonmagnetic to ferromagnetic state above a critical lattice constant. Consequently, substrates can be used to explore versatile magnetic, electronic, and quantum topological properties. We establish phase diagrams of versatile quantum phases in terms of exchange coupling and spin–orbit coupling effectively tuned by the lattice constants. We further reveal the first room-temperature quantum anomalous Hall (QAH) effect, i.e., Sn on 2√3 × 2√3 graphane is a QAH insulator with a large spin–orbit coupling gap of ~0.2 eV and a Curie temperature of ~380 K by using the 2D anisotropic Heisenberg model.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Ferroelectric incommensurate spin crystals

Ferroics, especially ferromagnets, can form complextopological spin structures such as vortices and skyrmions when subjected to particular electrical and mechanical boundary conditions. Simple vortex-like, electric-dipole-based topological structures have been observed in dedicated ferroelectric systems, especially ferroelectric-insulator superlattices such as PbTiO 3 /SrTiO 3 , which was later shown to be a model system owing to its high depolarizing field. To date, the electric dipole equivalent of ordered magnetic spin lattices driven by the Dzyaloshinskii-Moriya interaction (DMi) has not been experimentally observed. Here we examine a domain structure in a single PbTiO 3 epitaxial layer sandwiched between SrRuO 3 electrodes. In this work, we observe periodic clockwise and anticlockwise ferroelectric vortices that are modulated by a second ordering along their toroidal core. The resulting topology, supported by calculations, is a labyrinth-like pattern with two orthogonal periodic modulations that form an incommensurate polar crystal that provides a ferroelectric analogue to the recently discovered incommensurate spin crystals in ferromagnetic materials. These findings further blur the border between emergent ferromagnetic and ferroelectrictopologies, clearing the way for experimental realization of further electric counterparts of magnetic DMi-driven phases.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2023

Electronic and Magnetic Properties of Oligomers and Chains of Poly(benzodifurandione) (PBDF), A Highly Conducting n-Type Polymer

The seminal development of highly electrically conducting polyacetylene via oxidative or reductive treatment (“doping”) has continuously inspired the search for other conducting π-conjugated polymers. Recently, poly(benzodifurandione), PBDF, was reported to have unexpected solubility given the absence of side chains and to exhibit an unprecedented, high electrical conductivity upon reduction (“n-doping”), with protons acting as counterions. Here, we theoretically investigate the electronic and magnetic properties of PBDF by taking long oligomers and one-dimensional (1D) periodic chains as model systems. With the oligomer models, we characterize the formation of polarons and bipolarons in n-doped PBDF. Our results indicate that singlet bipolarons tend to be the energetically most favorable species when protons bind to two closely located carbonyl groups in nearest-neighbor benzodifurandione moieties. The calculations on the 1D periodic chain models show that the positions of the protonated carbonyl groups determine the metallic, semiconducting, or insulating nature of a PBDF chain. When the protonated carbonyl groups are all situated on the same side of a PBDF chain, a stable helical chain configuration is found that exhibits ferromagnetic behavior. Our findings elucidate the mechanism of polaron and bipolaron formation in long oligomers of n-doped PBDF and highlight the fascinating electronic and magnetic properties of periodic 1D chains. Furthermore, these studies also provide a stepping stone for investigations of PBDF thin films, for which two- and three-dimensional structures must be considered.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Electrical Interrogation of Thickness‐Dependent Multiferroic Phase Transitions in the 2D Antiferromagnetic Semiconductor NiI 2

Abstract 2D magnetic materials hold promise for quantum and spintronic applications. 2D antiferromagnetic materials are of particular interest due to their relative insensitivity to external magnetic fields and higher switching speeds compared to 2D ferromagnets. However, their lack of macroscopic magnetization impedes detection and control of antiferromagnetic order, thus motivating magneto‐electrical measurements for these purposes. Additionally, many 2D magnetic materials are ambient‐reactive and electrically insulating or highly resistive below their magnetic ordering temperatures, which imposes severe constraints on electronic device fabrication and characterization. Herein, these issues are overcome via a fabrication protocol that achieves electrically conductive devices from the ambient‐reactive 2D antiferromagnetic semiconductor NiI 2 . The resulting gate‐tunable transistors show band‐like electronic transport below the antiferromagnetic and multiferroic transition temperatures of NiI 2 , revealing a Hall mobility of 15 cm 2 V −1 s −1 at 1.7 K. These devices also allow direct electrical probing of the thickness‐dependent multiferroic phase transition temperature of NiI 2 from 59 K (bulk) to 28 K (monolayer).

2D magnets↗
DOE OSTI2023

Axion optical induction of antiferromagnetic order

Using circularly polarized light to control quantum matter is a highly intriguing topic in physics, chemistry and biology. Previous studies have demonstrated helicity-dependent optical control of chirality and magnetization, with important implications in asymmetric synthesis in chemistry; homochirality in biomolecules; and ferromagnetic spintronics. We report the surprising observation of helicity-dependent optical control of fully compensated antiferromagnetic order in two-dimensional even-layered MnBi 2 Te 4 , a topological axion insulator with neither chirality nor magnetization. Furthermore, to understand this control, we study an antiferromagnetic circular dichroism, which appears only in reflection but is absent in transmission. We show that the optical control and circular dichroism both arise from the optical axion electrodynamics. Our axion induction provides the possibility to optically control a family of PT-symmetric antiferromagnets (P, inversion; T, time-reversal) such as Cr 2 O 3 , even-layered CrI3 and possibly the pseudo-gap state in cuprates. In MnBi 2 Te 4 , this further opens the door for optical writing of a dissipationless circuit formed by topological edge states.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗