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At least 217 records · Page 12

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NASA NTRS1971

Study to determine and improve design for lithium-doped solar cells

Solar cell experiments show that a single lithium density parameter, the lithium density gradient, calculated from nondestructive capacitance measurements, provides the basis for accurate predictions of lithium cell behavior in a 1-MeV electron environment for fluences ranging between 3 X 10 to the 13th power e/sq cm and 3 X 10 to the 15th power/e sq cm. The oxygen-rich (quartz crucible) lithium cell with phosphorous starting dopant and lithium gradient between approximately 5 X 10 to the 18th power and 1.5 x 10 to the 19th power/cm to the 4th power was found superior in performance to the commercial 10 ohm-cm n/p control cells. Post-recovery stability of oxygen-rich cells was satisfactory. An average post-recovery current drop of approximately 1 mA was observed for 70 crucible cells after 1 year-equivalent storage time at 80 C. In contrast the oxygen-poor (float zone and Lopex) lithium cells displayed spotty initial performance and stability problems at room temperature.

Brucker, G.↗

NASA NTRS1972

Silicon solar cell development and radiation effects study for low temperature and low illumination intensity operation, volume 2

The results are presented of a study to determine the effect of in-situ proton irradiation upon low temperature, low intensity performance of several cell types. The cell types were selected in an attempt to distinguish variations in temperature-dependent radiation resistance which could be attributed to the n-p or p-n structure, diffused or implanted junctions, crucible grown or float-zone type base material, and high or low base resistivity. The results indicate that while expected variations of performance occur at room temperature, all cell types degrade more or less similarly at lower temperatures with normalized degradation becoming increasingly rapid as temperature is reduced. Recommendations for an optimized cell for Jupiter probe use are included along with a definition of the testing required on these cells to insure good performance characteristics.

Kirkpatrick, A. R.↗

NASA NTRS1972

The observation of damage regions produced by neutron irradiation in lithium-doped silicon solar cells.

Study regions of lattice disorder produced in lithium-doped float-zone melted n/p-type silicon solar cells by irradiation with monoenergetic neutrons at doses between 10 to the 10th and 10 to the 13th per cu cm. The defect regions were revealed by chemically etching the surface of the solar cells and by observing carbon replicas in an electron microscope. It was found that the defect density increased with increasing irradiation dose and increased lithium content, whereas the average defect diameter was found to decrease. From thermal annealing experiments it was found that in the lithium-doped material the defect structure was stable at temperatures between 300 and 1200 K. This was found to be in contrast to the undoped material where at the lowest doses considerable annealing was observed to occur. These results are discussed in terms of the theoretical predictions and models of defect clusters proposed by Gossick (1959) and Crawford and Cleland (1959).

Ghosh, S.↗

NASA NTRS1971

Lithium - An impurity of interest in radiation effects of silicon.

Study of the introduction and annealing of defects produced in lithium-diffused float-zone n-type silicon by 30-MeV electrons and fission neutrons. The introduction rate of recombination centers produced by electron irradiation is dependent on lithium concentration and for neutron irradiation is independent of lithium concentration. The introduction rate of Si-B1 centers also depends on the lithium concentration. The annealing of electron- and neutron-produced recombination centers, Si-B1 centers, and Si-G7 centers in lithium-diffused silicon occurs at much lower temperatures than in nondiffused material.

Naber, J. A.↗

NASA NTRS1972

Directional solidification of eutectic composites in space environment

The Ni-Ni3Ta eutectic and a nickel-base alloy containing 30 wt pct Ta were solidified unidirectionally in an electron beam floating zone melting apparatus. It was found that the volume fraction of the Ni3Ta phase in the Ni-Ni3Ta eutectic mixture was increased from 7.6 to 36 volume pct in agreement with the theory as predicted. Tensile properties of the randomly solidified and unidirectionally solidified Ni-Ni3Ta eutectic were determined as function of solidification rate and temperature. It was found that the ultimate tensile strength decreased as both the test temperature and solidification rate increased. An elongation of 40 pct was obtained for a nickelbase alloy containing 30 wt at room temperature. This unusually large elongation was attributed to the superplastic behavior of the alloy. The critical currents versus the external fields at 2.5, 3.0, 3.5 and 4.2 deg for the unidirectionally solidified Pb-Sn eutectic were measured. The values of critical fields at zero critical currents were obtained by extrapolation.

Yue, A. S.↗

NASA NTRS1973

Growth of a single crystal ribbon in space

Three critical technological areas associated with adapting the method of pulling signal crystal silicon ribbon to a space environment were investigated. Basic parameters such as the magnitude of the forces required and the coupling between thermal and force are discussed. The design of a ribbon puller is described, and the problems encountered are also discussed. The force fields in the vicinity of a coil were characterized and results of attempts to pull ribbon are described. The results of the one experiment to grow a conventional float zone crystal in an external static magnetic field are presented.

Padovani, F. A.↗

NASA NTRS1974

Skylab 3 and 4 science demonstrations: Preliminary report

Twelve science demonstrations were accomplished on the Skylab 3 and 4 missions. These were defined in response to crew requests for time-gap fillers and were designed to be accomplished using onboard equipment. The following 12 are described and the preliminary results are given: liquid floating zone; diffusion in liquids; ice melting; immiscible liquids; liquid films; gyroscope; Rochelle salt growth; deposition of silver crystals; fluid mechanics series; neutron environment; orbital mechanics; and charged particle mobility.

Bannister, T. C.↗

NASA NTRS1974

Analytics of crystal growth in space

Two crystal growth processes considered for spacelab experiments were studied to anticipate and understand phenomena not ordinarily encountered on earth. Computer calculations were performed on transport processes in floating zone melting and on growth of a crystal from solution in a spacecraft environment. Experiments intended to simulate solution growth at micro accelerations were performed.

Wilcox, W. R.↗

NASA NTRS1975

The study of single crystals for space processing and the effect of zero gravity

A study was undertaken to analyze different growth techniques affected by a space environment. Literature on crystal growth from melt, vapor phase and float zone was reviewed and the physical phenomena important for crystal growth in zero-gravity environment was analyzed. Recommendations for potential areas of crystal growth feasible for space missions are presented and a bibliography of articles in the area of crystal growth in general is listed.

Lal, R. B.↗

NASA NTRS1975

Research and development of low cost processes for integrated solar arrays

Si reduction, purification and sheet generation work has been concentrated on gaining information about a reduction process combined with purification (higher purity arc furnace with gas blowing and gradient freezing), transport process with purification and polycrystal sheet growth potential (SiF2), plastic deformation for sheet generation, and float zone sheet recrystallization.

Wolf, M.↗

NASA NTRS1975

Low cost processes for solar-grade silicon

Upgrading metallurgical grade silicon is being pursued in four associated areas in order to improve the purity of the normally 98% material. The first two work areas involve purification of raw materials entering the process in addition to upgrading the arc furnace itself. The second two areas of process upgrading comprise improving the purity of the silicon after it leaves the arc furnace by reactive gas blowing and unidirectional freezing. The best cell produced to date was fabricated from MG-Si that had been blown with an O2-Cl2 mixture, unidirectionally solidified, and 6-float-zone passed (to determine a base boron level of 0.04 ohm/cm). The cell showed a 10.7% AMO efficiency. In the other processes category, the use of silicates as a silicon source and of electrolysis as a process were studied. The best electrolytic process uses a 1000 C fused salt of silica in cryolite.

Hunt, L. P.↗

NASA NTRS1976

Postflight analysis of science demonstrations

A summary of the results of the 12 Marshall Space Flight Center science demonstrations performed on Skylab is presented. The demonstrations include diffusion in liquids, ice melting, liquid floating zone, gyroscope, liquid films, immiscible liquids, Rochelle salt growth, deposition of silver crystals, fluid mechanics, neutron environment, orbital mechanics, and charged particle mobility.

Bannister, T. C.↗

NASA NTRS1976

The effect of secondary impurities on solar cell performance

Czochralski and float zone sigle crystals of silicon were doped with the primary impurities B or P so that a resistivity of 0.5 ohm cm resulted, and in addition doped with certain secondary impurities including Al, C, Cr, Cu, Fe, Mg, Mn, Na, Ni, O, Ti, V, and Zr. The actual presence of these impurities was confirmed by analysis of the crystals. Solar cell performance was evaluated and found to be degraded most significantly by Ti, V, and Zr and to some extent by most of the secondary impurities considered. These results are of significance to the low cost silicon program, since any such process would have to yield at least tolerable levels of these impurities.

Hill, D. E.↗

NASA NTRS1978

Characterization of the effects of metallic impurities on silicon solar cell performance

The effects of controlled concentrations of secondary impurities (Al, C, Ca, Cr, Cu, Fe, Mg, Mn, Mo, Ta, Ti, V, Zn, and Zr), incorporated alone or in combinations into Czochralski and float zone crystals, on the performance of silicon solar cells were investigated. Impurity concentrations ranged from 10 to the 11th to 10 to the 17th/cu cm. Solar cells were fabricated by a conventional diffusion process and characterized by computer reduction of current-voltage data. The data suggest that performance loss primarily results from reduction of the base diffusion length. On the basis of this assumption, a first order analytic model which predicts cell performance as a function of impurity concentrations is developed. Calculated performance parameters are in good agreement with observation, except for some impurities, such as Fe, Cu and Ni, which degrade cells via recombination and defects in the junction space-charge region. N-base devices are less affected by impurities, although degradation mechanisms appear to be the same as in p-devices. There seems to be very limited interaction between impurities in multiply-doped cells.

Davis, J. R.↗

NASA NTRS1980

Study program to improve the open-circuit voltage of low resistivity single crystal silicon solar cells

The results of a 14 month program to improve the open circuit voltage of low resistivity silicon solar cells are described. The approach was based on ion implantation in 0.1- to 10.0-ohm-cm float-zone silicon. As a result of the contract effort, open circuit voltages as high as 645 mV (AMO 25 C) were attained by high dose phosphorus implantation followed by furnace annealing and simultaneous SiO2 growth. One key element was to investigate the effects of bandgap narrowing caused by high doping concentrations in the junction layer. Considerable effort was applied to optimization of implant parameters, selection of furnace annealing techniques, and utilization of pulsed electron beam annealing to minimize thermal process-induced defects in the completed solar cells.

Minnucci, J. A.↗

NASA NTRS1980

The 3-5 semiconductor solid solution single crystal growth

Techniques used for liquid and vapor phase epitaxy of gallium indium arsenide are described and the difficulties encountered are examined. Results show that the growth of bulk III-V solid solution single crystals in a low gravity environment will not have a major technological impact. The float zone technique in a low gravity environment is demonstrated using cadmium telluride. It is shown that this approach can result in the synthesis of a class of semiconductors that can not be grown in normal gravity because of growth problems rooted in the nature of their phase diagrams.

Gertner, E. R.↗

NASA NTRS1980

Tailored emitter, low-resistivity, ion-implanted silicon solar cells

Open-circuit voltages as high as 0.645 V (AM0, 25 C) have been obtained by a new process developed for low-resistivity silicon. The process utilizes high-dose phosphorus implantation followed by furnace annealing and simultaneous oxide growth. The effect of the thermally grown oxide is a reduction of surface recombination velocity; the oxide also acts as a moderately efficient antireflection (AR) coating. Boron-doped, float-zone silicon with resistivities from 0.1 to 1.0 (omega)(cm) has been processed according to this sequence; results show that the highest open-circuit voltage is obtained with 0.1(omega)(cm) starting material. The effects of Auger recombination and bandgap narrowing caused by high doping concentrations in the n(+)junction region have been investigated by implanting phosphorus over a wide range of dose levels. The effects of emitter-phosphorus concentrations tailored to optimize electric fields in the emitter have also been investigated.

Minnucci, J. A.↗

NASA NTRS1980

Surface tension-driven convections

The study of time-dependent flows generated by surface-tension gradients in thin liquid layers is reported. Numerical techniques for dealing with the complete float-zone process were investigated. In particular, finite element methods with fast iterative procedures, using multipoint constraints and nonlinear optimization were examined.

Ostrach, S.↗