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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 217 records · Page 12

Flux pinning characteristics and irreversibility line in high temperature superconductors

The flux pinning properties in high temperature superconductors are strongly influenced by thermally activated flux motion. The scaling relation of the pinning force density and the irreversibility line in various high temperature superconductors are numerically analyzed in terms of the flux creep model. The effect of two factors, i.e., the flux pinning strength and the dimensionality of the material, on these properties are investigated. It is speculated that the irreversibility line in Bi-2212 superconductors is one order of magnitude smaller than that in Y-123, even if the flux pinning strength in Bi-2212 is improved up to the level of Y-123. It is concluded that these two factors are equally important in determination of the flux pinning characteristics at high temperatures.

Matsushita, T.↗

Advanced High Temperature Structural Seals

This program addresses the development of high temperature structural seals for control surfaces for a new generation of small reusable launch vehicles. Successful development will contribute significantly to the mission goal of reducing launch cost for small, 200 to 300 lb payloads. Development of high temperature seals is mission enabling. For instance, ineffective control surface seals can result in high temperature (3100 F) flows in the elevon area exceeding structural material limits. Longer sealing life will allow use for many missions before replacement, contributing to the reduction of hardware, operation and launch costs. During the first phase of this program the existing launch vehicle control surface sealing concepts were reviewed, the aerothermal environment for a high temperature seal design was analyzed and a mock up of an arc-jet test fixture for evaluating seal concepts was fabricated.

Newquist, Charles W.↗

Quantile regression-enriched event modeling framework for dropout analysis in high-temperature superconductor manufacturing

High-temperature superconductor (HTS) tapes have shown promising characteristics of high critical current, which are prerequisites for applications in high-field magnets. Due to the unstable growth conditions in the HTS manufacturing process, however, the frequent occurrences of dropouts in the critical current impede the consistent performance of HTS tapes. To manufacture HTS tapes with large scale, high yield, and uniform performance, it is essential to develop novel data analysis approaches for modeling the dropouts and identifying the related important process parameters. Conventional methods for modeling recurrent events, such as the point process, require the extraction of events from quality measurements. As the critical current is a continuous process, it may not comprehensively represent the drop patterns by transforming the time-series measurements into a set of events. Here, to solve this issue, we develop a novel quantile regression-enriched event modeling (QREM) framework that integrates the non-homogeneous Poisson process for modeling the occurrence of dropouts and the quantile regression for capturing the drop patterns. By incorporating the feature selection and regularization, the proposed framework identifies a set of significant process parameters that can potentially cause the dropouts of HTS tapes. The proposed method is tested on real HTS tapes produced using an advanced manufacturing process, successfully identifying important parameters that influence dropout events including the substrate temperature and voltage. The results demonstrate that the proposed QREM method outperforms the standard point process in predicting the occurrence of dropouts.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Aeronautical applications of high-temperature superconductors

The successful development of high-temperature superconductors (HTS) could have a major impact on future aeronautical propulsion and aeronautical flight vehicle systems. A preliminary examination of the potential application of HTS for aeronautics indicates that significant benefits may be realized through the development and implementation of these newly discovered materials. Applications of high-temperature superconductors (currently substantiated at 95 K) were envisioned for several classes of aeronautical systems, including subsonic and supersonic transports, hypersonic aircraft, V/STOL aircraft, rotorcraft, and solar, microwave and laser powered aircraft. Introduced and described are the particular applications and potential benefits of high-temperature superconductors as related to aeronautics and/or aeronautical systems.

Turney, George E.↗

Aeronautical applications of high-temperature superconductors

The successful development of high-temperature superconductors (HTS) could have a major impact on future aeronautical propulsion and aeronautical flight vehicle systems. A preliminary examination of the potential application of HTS for aeronautics indicates that significant benefits may be realized through the development and implementation of these newly discovered materials. Applications of high-temperature superconductors (currently substantiated at 95 k) were envisioned for several classes of aeronautical systems, including subsonic and supersonic transports, hypersonic aircraft, V/STOL aircraft, rotorcraft, and solar, microwave and laser powered aircraft. Introduced and described are the particular applications and potential benefits of high-temperature superconductors as related to aeronautics and/or aeronautical systems.

Turney, George E.↗

Packaging Technologies for High Temperature Electronics and Sensors

This paper reviews ceramic substrates and thick-film metallization based packaging technologies in development for 500degC silicon carbide (SiC) electronics and sensors. Prototype high temperature ceramic chip-level packages and printed circuit boards (PCBs) based on ceramic substrates of aluminum oxide (Al2O3) and aluminum nitride (AlN) have been designed and fabricated. These ceramic substrate-based chiplevel packages with gold (Au) thick-film metallization have been electrically characterized at temperatures up to 550degC. A 96% alumina based edge connector for a PCB level subsystem interconnection has also been demonstrated recently. The 96% alumina packaging system composed of chip-level packages and PCBs has been tested with high temperature SiC devices at 500degC for over 10,000 hours. In addition to tests in a laboratory environment, a SiC JFET with a packaging system composed of a 96% alumina chip-level package and an alumina printed circuit board mounted on a data acquisition circuit board was launched as a part of the MISSE-7 suite to the International Space Station via a Shuttle mission. This packaged SiC transistor was successfully tested in orbit for eighteen months. A spark-plug type sensor package designed for high temperature SiC capacitive pressure sensors was developed. This sensor package combines the high temperature interconnection system with a commercial high temperature high pressure stainless steel seal gland (electrical feed-through). Test results of a packaged high temperature capacitive pressure sensor at 500degC are also discussed. In addition to the pressure sensor package, efforts for packaging high temperature SiC diode-based gas chemical sensors are in process.

Electronic packaging↗

Molecular Engineering Enabled Stable Deep Eutectic Amide-Based Electrolyte for High-Temperature Lithium–Metal Batteries

The development of advanced lithium-metal batteries (LMBs), such as high-temperature LMBs and high-energy-density LMBs, has critical requirements for electrolytes. However, conventional electrolytes suffer from thermal instability and insufficient electrolyte/Li interfacial compatibility, severely limiting their utilization in high-temperature LMBs. Herein, we design a high-temperature N-methylacetamide (NMAc)-based deep eutectic electrolyte (DEE) by molecular engineering on a solvation structure via a sacrificial additive of vinyl ethylene carbonate (VEC). Specifically, VEC interacts with the Li prior to NMAc, facilitating the formation of a solid electrolyte interphase to inhibit the reaction between Li and NMAc. The stable VEC-DEE effectively suppresses the growth of lithium dendrites and ensures the battery a cycling stability of 550 cycles at 80 °C. Additionally, we also demonstrate the application of VEC-DEE in high-energy-density LMBs with a high mass loading of 2.5 mAh/cm 2 . In conclusion, this research opens a new avenue for the rational design of advanced high-temperature electrolytes.

25 ENERGY STORAGE↗

High temperature alkali corrosion in high velocity gases

The effects of potential impurities in coal derived liquids such as Na, K, Mg, Ca and Cl on the accelerated corrosion of IN-100, U-700, IN-792 and Mar-M509 were investigated using a Mach 0.3 burner rig for times to 1000 hours in one hour cycles. These impurities were injected in combination as aqueous solutions into the combustor of the burner rig. The experimental matrix utilized was designed statistically. The extent of corrosion was determined by metal recession. The metal recession data were fitted by linear regression to a polynomial expression which allows both interpolation and extrapolation of the data. As anticipated, corrosion increased rapidly with Na and K, and a marked maximum in the temperature response was noted for many conditions. In contrast, corrosion decreased somewhat as the Ca, Mg and Cl contents increased. Extensive corrosion was observed at concentrations of Na and K as low as 0.1 PPM at long times.

Lowell, C. E.↗

High temperature compounds for turbine vanes

Fabrication and microstructure control studies were conducted on SiC, Si3N and composites based on Si3N. Charpy mode impact testing to 2400 F established that Si3N4/Mo composites have excellent potential. Attempts to fabricate composites of Si3N4 with superalloys, both by hot pressing and infiltration were largely unsuccessful in comparison to using Mo, Re, and Ta which are less reactive. Modest improvements in impact strength were realized for monolithic Si3N4; however, SiC strengths increased by a factor of six and now equal values achieved for Si3N4. Correlations of impact strength with material properties are discussed. Reduced MgO densification aid additions to Si3N4 were found to decrease densification kinetics, increase final porosity, decrease room temperature bend strength, increase high temperature bend strength, and decrease bend stress rupture properties. The decrease in bend strength at high temperature for fine grain size SiC suggested that a slightly larger grain size material with a nearly constant strength-temperature relation may prove desirable in the creep and stress rupture mode.

Rhodes, W. H.↗

High Temperature W-band Complex Permittivity Measurements of Thermally Cycled Ceramic-Metal Composites: AlN:Mo with 0.25 vol% to 4.0 vol% Mo from 25 °C to 1000 °C in Air

An apparatus for measuring the W-band (75-110GHz) complex permittivity of dielectrics at 1000 °C was developed. This apparatus allows for measurements at approximately twice the temperature of previously published high temperature free-space measurement systems while maintaining similar precision. Challenges were addressed related to high temperature measurements, including temperature uniformity, the accuracy of temperature measurements, and preventing temperature related changes to mm-wave measurement systems. The details of complex permittivity extraction from the measured S-parameters are discussed. Sources of error related to permittivity measurement and mathematical models were identified and are discussed in detail herein. Thermally-cycled, mm-wave absorbing, aluminum nitride ceramic composites containing varying levels of molybdenum additives were measured over the range of 25-1000 °C. These measurements were compared to the same composites before thermal cycling. It was found that ceramic composites are largely stable after thermal cycling in terms of dielectric properties despite the presence of visible surface modifications.

Zane W Cohick↗

Packaging Technologies for High Temperature Electronics and Sensors

This paper reviews ceramic substrates and thick-film metallization based packaging technologies in development for 500 C silicon carbide (SiC) electronics and sensors. Prototype high temperature ceramic chip-level packages and printed circuit boards (PCBs) based on ceramic substrates of aluminum oxide (Al2O3) and aluminum nitride (AlN) have been designed and fabricated. These ceramic substrate-based chip-level packages with gold (Au) thick-film metallization have been electrically characterized at temperatures up to 550 C. A 96% alumina based edge connector for a PCB level subsystem interconnection has also been demonstrated recently. The 96% alumina packaging system composed of chip-level packages and PCBs has been tested with high temperature SiC devices at 500 C for over 10,000 hours. In addition to tests in a laboratory environment, a SiC JFET with a packaging system composed of a 96% alumina chip-level package and an alumina printed circuit board mounted on a data acquisition circuit board was launched as a part of the MISSE-7 suite to the International Space Station via a Shuttle mission. This packaged SiC transistor was successfully tested in orbit for eighteen months. A spark-plug type sensor package designed for high temperature SiC capacitive pressure sensors was developed. This sensor package combines the high temperature interconnection system with a commercial high temperature high pressure stainless steel seal gland (electrical feed-through). Test results of a packaged high temperature capacitive pressure sensor at 500 C are also discussed. In addition to the pressure sensor package, efforts for packaging high temperature SiC diode-based gas chemical sensors are in process.

Chen, Liang-Yu↗

Room-temperature adhesive for high-temperature use

PPQ (polyphenylquinoxaline) cures at room temperature, but withstands temperatures between -186 and +402 deg C. Adhesive is applied in chloroform solution. Bond forms as solvent evaporates.

Brooks, J. L.↗

Practical approaches for application of hi-temperature strain gages on high temperature composites

Four major areas of interest with respect to utilizing strain gages on carbon/carbon (with SiC surfaces) and titanium matrix composites are addressed. Strain gage and adhesive combinations on carbon/carbon (C/C) at temperatures from minus 190 C to 540 C, half-bridge gaging for reducing apparent strain on C/C using Poisson's ratio and bending configurations, review of the 'field installation' techniques developed for gaging a C/C hypersonic generic elevon, and results of initial strain gaging efforts on titanium matrix composites are discussed. Current research in developing techniques for increasing the maximum temperature for strain gages on carbon/carbon are reviewed.

Moore, Thomas C., Sr.↗

Insertion loss and noise-temperature contribution of high-temperature superconducting bandpass filters centered at 2.3 and 8.45 GHz

Two superconducting Tl-Ca-Cu-Ba-O bandpass filters were fabricated for JPL by Superconductor Technologies Incorporated, Santa Barbara, California. The filters were designed to operate at 2.3 GHz (S-band) with a 0.5-dB bandwidth of 60 MHz and at 8.45 GHz (X-band) with a 0.5-dB bandwidth of 150 MHz. The structure selected for both filters incorporates half-wavelength thin-film resonators in a stripline configuration. The S-band filter uses an edge-coupled interdigital design and the X-band filter uses an end-coupled design. The insertion loss and the noise-temperature contribution were measured at 12 K for both filters.

Prater, J. L.↗

High-Temperature Crystal-Growth Cartridge Tubes Made by VPS

Cartridge tubes for use in a crystal growth furnace at temperatures as high as 1,600 deg. C have been fabricated by vacuum plasma spraying (VPS). These cartridges consist mainly of an alloy of 60 weight percent molybdenum with 40 weight percent rhenium, made from molybdenum powder coated with rhenium. This alloy was selected because of its high melting temperature (approximately equal.2,550 C) and because of its excellent ductility at room temperature. These cartridges are intended to supplant tungsten/nickel-alloy cartridges, which cannot be used at temperatures above approximately equal 1,300 C.

Holmes, Richard↗