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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 217 records · Page 12
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

20 kV Gallium Nitride pn Diode Electro-Magnetic Pulse Arrestor for Grid Reliability (Final Scientific/Technical Report)

This project developed vertical Gallium Nitride (GaN) pn diodes under two main thrusts: (1) A focus on relatively higher-voltage devices for use as fast EMP arrestors to protect the electric grid; and (2) A focus on a Foundry effort to establish the manufacturability of relatively lower voltage devices. For the first thrust, the aim was to develop devices that go into avalanche breakdown to clamp the voltage across sensitive grid equipment subject to voltage transients induced by electromagnetic pulses (EMPs). Devices with breakdown voltages exceeding 6.5 kV were achieved, and breakdown times shorter than 1 ns were demonstrated, which is sufficiently fast to protect against the fast component of an EMP-induced signal. Key challenges included the epitaxial growth of thick (50 µm or more), low-doped (low 10 15 cm -3 range) GaN layers comprising the drift regions of the diodes, as well as the design and fabrication of edge termination structures (step-etched junction termination extensions) to prevent premature breakdown. Midway through the project, an additional emphasis was put on large-area, high-current devices, and forward currents of approximately 400 A were achieved in composite devices towards the end of the project. Experimental and theoretical studies of impact ionization and avalanche ruggedness were also conducted. For the second thrust (the Foundry), the focus was primarily on 1.2-kV-class devices, although towards the end of the project outstanding results on 3.3-kV class devices were also achieved. The aim of the Foundry was to develop a high-yield, reliable, and economic vertical GaN pn diode process. The Foundry conducted characterization of incoming epitaxial material and correlated this information with the yield and performance of fully processed devices. Wafer maps of diode characteristics such as forward and reverse current as well as capacitance-voltage curves were measured using auto-probing. Several mask sets comprising different-area devices as well as multiple edge termination designs (implanted junction termination extensions, guard rings, and combinations thereof) were studied, and machine-learning-based approaches were utilized to analyze the data. Packaging and reliability efforts were also undertaken for the Foundry diodes, which are necessary for a viable commercial process.

20KV↗
DOE OSTI2023

20 kV Gallium Nitride pn Diode Electro-Magnetic Pulse Arrestor for Grid Reliability (Final Report)

This project developed vertical Gallium Nitride (GaN) pn diodes under two main thrusts: (1) A focus on relatively higher-voltage devices for use as fast EMP arrestors to protect the electric grid; and (2) A focus on a Foundry effort to establish the manufacturability of relatively lower-voltage devices. For the first thrust, the aim was to develop devices that go into avalanche breakdown to clamp the voltage across sensitive grid equipment subject to voltage transients induced by electromagnetic pulses (EMPs). Devices with breakdown voltages exceeding 6.5 kV were achieved, and breakdown times shorter than 1 ns were demonstrated, which is sufficiently fast to protect against the fast component of an EMP-induced signal. Key challenges included the epitaxial growth of thick (50 um or more), low-doped (low 10 15 cm -3 range) GaN layers comprising the drift regions of the diodes, as well as the design and fabrication of edge termination structures (step-etched junction termination extensions) to prevent premature breakdown. Midway through the project, an additional emphasis was put on large-area, high-current devices, and forward currents of approximately 400 A were achieved in composite devices towards the end of the project. Experimental and theoretical studies of impact ionization and avalanche ruggedness were also conducted. For the second thrust (the Foundry), the focus was primarily on 1.2-kV-class devices, although towards the end of the project outstanding results on 3.3-kV-class devices were also achieved. The aim of the Foundry was to develop a high-yield, reliable, and economic vertical GaN pn diode process. The Foundry conducted characterization of incoming epitaxial material and correlated this information with the yield and performance of fully processed devices. Wafer maps of diode characteristics such as forward and reverse current as well as capacitance-voltage curves were measured using auto-probing. Several mask sets comprising different-area devices as well as multiple edge termination designs (implanted junction termination extensions, guard rings, and combinations thereof) were studied, and machine-learning-based approaches were utilized to analyze the data. Packaging and reliability efforts were also undertaken for the Foundry diodes, which are necessary for a viable commercial process.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2022

ION PRODUCTION AND MITIGATION IN DC HIGH-VOLTAGE PHOTO-GUNS

One of the biggest obstacles to operating a GaAs polarized electron source with a long charge lifetime is the mitigation of ion back-bombardment. Several techniques exist to either clear ions from the accelerator or to mitigate ion damage of the photocathode. Predicting the effectiveness of these techniques requires sophisticated simulation models of electron impact ionization within the photo-gun. In this work, the effectiveness of applying a positive anode bias voltage to mitigate ion damage and increase the charge lifetime of the GaAs photocath?ode was studied over three run periods at the Continuous Electron Beam Accelerator Facility (CEBAF) at Jefferson Lab (JLab). The charge lifetime with the biased anode configuration was 1.80±0.51 times longer than the lifetime of the usual grounded anode configuration. Sim?ulations of ionization within the CEBAF photo-gun and adjacent beamline were made using General Particle Tracer (GPT) and a new C++ custom element to predict and explain the substantial improvement in charge lifetime. The experimental results and the development of the ionization custom element, with its use in simulations of ion back-bombardment with the biased anode, are described in detail.

Yoskowitz, Joshua↗
DOE OSTI2026

Fast Growth of Ga2O3 on Highly Offcut (100)-Oriented Substrates

Beta-Ga2O3 has emerged as a leading candidate for next-generation power electronics, radio frequency (RF) switches, and extreme environment electronics due to a wide band gap (4.6 - 4.9 eV), high dopability (approximately 40 meV activation energy for an isolated silicon donor), and melt growth characteristics resulting in commercially available 4-inch substrates and commercial demonstrations of 6-inch substrates by multiple techniques. The (100) surface of Ga2O3 is highly desirable from a device and epitaxy standpoint - bulk growth of (100) material is more scalable than (010), the surface is nearly lattice-matched to p-type partner NiO, and Al2O3 incorporates at higher concentrations without phase separation. More importantly, the impact ionization coefficients along the [100] direction are low, leading to the highest possible critical fields. This is advantageous compared to the current state of the art, (001), due to reduced surface defects and increased possible breakdown voltage. However, the epitaxial growth rate on (100) surfaces is less than 10% of other faces due to weak bonding and favorable desorption, and on-axis (100) growth easily forms twin domains. Recent demonstrations have shown growth rate improvements from 0.4 nm/min to 1.5 nm/min by growing on (100) wafers that are offcut 6 degrees in the -c direction. These films show step-flow growth from (20-1) step-edges and high electron mobility due to suppressed twins. Despite these exciting results, offcuts greater than 6 degrees have not been explored due to the waste associated with grinding and polishing large offcuts. In this talk we will discuss the molecular beam epitaxy (MBE) growth and properties of Beta-Ga2O3 grown on (100) substrates offcut in the -c direction up to 13.4 degrees. These large offcuts are enabled by edge-fed film-defined growth (EFG) where the offcut is grown into the surface by pulling the crystal through the EFG die with the seed crystal rotated by the desired offcut angle. We will demonstrate that 13.4 degrees offcut substrates still exhibit a terraced (100) surface, and that a >10x increase (>5 nm/min) in growth rate is achieved. As previously reported on lower offcuts, we observe reversal of substrate twin domains around the (001) direction at the substrate-epilayer interface. We will discuss electrical properties including record-low (by MBE) unintentional doping densities of < 5E15 cm-3 and critical breakdown field in Schottky barrier diodes comparable with state-of-the-art (001) Ga2O3 without edge termination.

36 MATERIALS SCIENCE↗
NASA NTRS1972

Investigation of high speed phenomena

Experimental research is reported for laboratory simulation of meteors and meteoroid impacts on solid surfaces. Two types of mass measurements are discussed: impact ionization risetime effect, and luminous efficiency measurements.

Becker, D. G.↗
NASA NTRS1974

Physics of sub-micron cosmic dust particles

Laboratory tests with simulated micrometeoroids to measure the heat transfer coefficient are discussed. Equations for ablation path length for electrically accelerated micrometeoroids entering a gas target are developed which yield guidelines for the laboratory measurement of the heat transfer coefficient. Test results are presented for lanthanum hexaboride (LaB sub 6) microparticles in air, argon, and oxygen targets. The tests indicate the heat transfer coefficient has a value of approximately 0.9 at 30 km/sec, and that it increases to approximately unity at 50 km/sec and above. Test results extend to over 100 km/sec. Results are also given for two types of small particle detectors. A solid state capacitor type detector was tested from 0.61 km/sec to 50 km/sec. An impact ionization type detector was tested from 1.0 to 150 km/sec using LaB sub 6 microparticles.

Roy, N. L.↗
NASA NTRS1976

Io's atmosphere and ionosphere - New limits on surface pressure from plasma models

The paper studies charge particle impact as a mechanism for the production of Io's ionosphere. Pioneer 10 thermal plasma measurements and magnetospheric plasma models which explain the observed spatial distribution of neutral hydrogen and sodium atoms in the vicinity of Jupiter's satellite Io imply electron fluxes of about 10 to the 10th/sq cm/s. The fluxes and the temperature (about 100 eV) of this plasma suggest that electron impact ionization is the dominant process in forming the ionosphere of Io. It is found that the surface number density of the neutral species required to match the observed electron density profiles is about 10 to the 9th/cu cm or less. This value is two orders of magnitude lower than previous estimates.

Johnson, T. V.↗
NASA NTRS1977

Some optical and kinetic properties of the nearby interstellar gas

A model for resonant scattering of sunlight by the nearby interstellar gas is developed which takes into account the modification of a Maxwell-Boltzmann velocity distribution by a central force. While the formalism applies to both hydrogen and helium, the latter is emphasized. Theoretical line profiles and integrated emission rates for helium are compared with those of approximate models and with existing observations. As a result of this analysis, an upward revision of the bulk flow velocity of interstellar helium relative to the solar system, previously deduced from He 584-A observations, is required. Velocities of 15-20 km/s, temperatures of the order of 5000-10,000 K, and densities of the order of 0.008-0.02 per cu cm are sufficient to explain the (helium) observations. However, higher-precision measurements are required in order to place more stringent limits on the gas parameters. Calculations of the flux of interstellar helium atoms impinging on earth's upper atmosphere show that the resulting impact ionization is small compared with terrestrial processes.

Meier, R. R.↗
NASA NTRS1977

Periodic variations in Io's sodium and potassium clouds

Spectra of Io's sodium cloud taken 7.5 to 45 sec north and south of Io at a variety of magnetic latitudes of Io obtained during 17 nights of the 1975 apparition of Jupiter confirm the weakening of the cloud in the neighborhood of Jupiter's magnetic equator. The time scale for these changes is 1.5 hours or less. For impact ionization to cause these changes, a minimum flux of 100 billion/sq cm/sec 15 eV electrons or 40 billion/sq cm/sec 8 keV protons is required. Sodium velocities near 10 km/sec are required to explain the replenishment of ionized regions of the cloud. We also obtained spectra of Io's potassium cloud on eight nights during the 1975 apparition. This cloud appears to behave like the sodium cloud as Io's magnetic latitude varies. The potassium, however, may become much weaker as Io passes through the magnetic equator. The brightest intensity measured for the 7665 A resonance line was about 1 kR at a point 7.5 sec east of Io.

Trafton, L.↗
NASA NTRS1978

Europa - Ultraviolet emissions and the possibility of atomic oxygen and hydrogen clouds

Emission signals from Europa with wavelength below 800 A were detected by the Pioneer 10 ultraviolet photometer. In the present paper, improved procedures for data reduction are used to determine the spatial region as well as the intensity of the suggested emission sources. The observations indicate a cloud with a radius of about 1.5 Jupiter radii and an apparent brightness of approximately 10 rayleighs for a wavelength of 500 A. It is argued that neutral oxygen atoms, along with neutral hydrogen, are produced through dissociation of water ice on the surface of Europa by particle impact. Electron impact ionization excitation of oxygen atoms in the resulting cloud then gives rise to the observed emission. The present source brightness and cloud radius results are used to estimate an oxygen column density of the order of 10 trillion per sq cm, while the density of atomic hydrogen is at most 100 billion per sq cm and 1 trillion per sq cm for molecular hydrogen.

Wu, F.-M.↗
NASA NTRS1978

Mass spectrometry

A review of mass spectrometry in organic chemistry is given, dealing with advances in instrumentation and computer techniques, selected topics in gas-phase ion chemistry, and applications in such fields as biomedicine, natural-product studies, and environmental pollution analysis. Innovative techniques and instrumentation are discussed, along with chromatographic-mass spectrometric on-line computer techniques, mass spectral interpretation and management techniques, and such topics in gas-phase ion chemistry as electron-impact ionization and decomposition, photoionization, field ionization and desorption, high-pressure mass spectrometry, ion cyclotron resonance, and isomerization reactions of organic ions. Applications of mass spectrometry are examined with respect to bio-oligomers and their constituents, biomedically important substances, microbiology, environmental organic analysis, and organic geochemistry.

Burlingame, A. L.↗
NASA NTRS1979

Initial observations of the nightside ionosphere of Venus from Pioneer Venus Orbiter radio occultations

Results of radio occultation measurements of electron density profiles of the nightside ionosphere of Venus at solar zenith angles from 90 to 164 deg, obtained from the Pioneer Venus Orbiter, are reported. Data were derived from closed-loop S- and X-band signals received by the Deep Space Network upon ionospheric entry and exit of the spacecraft. Nightside electron density profiles are found to be rather uniform in the solar zenith angle range of from 95 to 107 deg, with peak electron densities ranging from 23,000 to 40,000/cu cm, while between 110 and 164 deg, profiles exhibit a high degree of variability and peak electron densities vary from 7,600 to 31,800/cu cm. A possible mechanism for the maintenance of the nightside Venus ionosphere during the long Venus night, which is consistent with the observed spatial and temporal variability of deep ionospheric electron density profiles, is proposed to be impact ionization by precipitating particles, although transport processes from the dayside may also be important.

Kliore, A. J.↗
NASA NTRS1980

The distribution of sodium in Io's cloud - Implications

Models for the distribution of sodium in Io's vicinity and in a disk in Io's orbital plane, compared with observational data, support the arguments that (1) Io is the source of the sodium; (2) sodium is ejected from the inside hemisphere and most of the high velocity sodium which is observed is ejected from the leading inside quadrant; (3) most of the sodium leads Io in Io's vicinity but follows Io at distances of more than Jupiter radii from Jupiter; (4) a significant fraction of the sodium flux is ejected at large angles with respect to Io's orbital plane; (5) the source velocity distribution has a pronounced high-velocity tail; and (6) impact ionization by electrons is significant at large distances from Io.

Macy, W.↗
NASA NTRS1980

Effect of blackbody radiation on the threshold for two-electron photodetachment of H/-/

The threshold law of the titled process, which is of the same form as that for electron-impact ionization of H, can experimentally be contaminated by simultaneous single photodetachment and Rydberg excitation of the residual atom, followed by ionization of the Rydberg atom by (room-temperature) blackbody photons. This gives a signal indistinguishable from direct double photodetachment. The correction is here calculated and shown to be finite at the double photodetachment threshold, and to have, possibly, an implication about the form of the threshold law itself. However, at room temperature its contribution is found to be small as it pertains to a recently initiated experiment at the Los Alamos Meson Physics Facility for available energies greater than a millivolt above threshold. The temperature dependence of the correction is shown to be large (k/B/T) to the 7/2; thus at higher temperatures the effect may be observable.

Temkin, A.↗
NASA NTRS1981

Optically induced bistable states in metal/tunnel-oxide/semiconductor /MTOS/ junctions

A new switching phenomenon in metal-oxide semiconductor tunnel junction has been discovered. With a sufficiently large negative bias applied to the electrode, incident visible light of intensity greater than about 1 microW/sq cm causes the reverse-biased junction to switch from a low-current to a high-current state. It is believed that hot-electron-induced impact ionization provides the positive feedback necessary for switching, and causes the junction to remain in its high-current state after the optical excitation is removed. The junction may be switched back to the low-current state electrically. The basic junction characteristics have been measured, and a simple model for the switching phenomenon has been developed.

Lai, S. K.↗
NASA NTRS1981

Storage of ions from laser-produced plasmas

A method of storing large numbers of metal ions created in laser-produced plasmas is presented. The outer electrode of the electrostatic ion trap is designed to give a harmonic axial potential. The ions trapped by the technique included Be(+), C(+), Al(+), Fe(+), and Pb(+). The initial number of ions stored (2 x 10 to the 8th) appeared to be the trap maximum since increasing the laser power beyond 2-3 MW did not change the ion number. An initial rapid decay in the 30-50 msec range was generally followed by a long tail at the 10% level with times greater than 100 msec. The technique should be valuable for refractory elements which cannot be easily vaporized for electron impact ionization.

Knight, R. D.↗
NASA NTRS1981

Meteoric ion production near Jupiter

Meteoric ion layer formation within the Jovian atmosphere is examined with attention to metallic ion production in the lower ionosphere. The Fe(+) impact ionization rate within the Jovian atmosphere peaks above the mesopause with a magnitude of approximately 0.5 cu cm/sec and is much less than the ambient ionosphere photoionization rates near the late afternoon Pioneer 10 ionosphere occultation. Charge exchange of the ablated neutral Fe atoms with ambient ions can result in an Fe(+) production rate of about 10 cu cm/sec. Ignoring transport, steady state Fe(+) density maxima of about 10,000 or 1,000,000 cu cm can be maintained when Fe(+) loss is through radiative association or radiative recombination respectively. Even if an estimated lower limit to the incident meteoroid flux is used based on a meteoroid spatial density which does not vary with distance from the sun, the corresponding Fe(+) peak densities are 1,000 and 500,000 cu cm, respectively. Meteoric ion densities may thus be important in the Jovian lower ionosphere.

Grebowsky, J. M.↗