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At least 217 records · Page 12

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NASA NTRS1978

Studies of Brazilian meteorites. XIV - Mineralogy, petrology, and chemistry of the Conquista, Minas Gerais, chondrite

The Conquista chondrite is described and classified as an H4. The mineral composition is reported. H-group classification is based on described microscopic, electron microprobe, and bulk chemical studies. The evidence for petrologic type 4 classification includes the pronounced well-developed chondritic texture; the slight compositional variations in constituent phases; the high Ca contents of pyroxene and the presence of pigeonite; glassy to microcrystalline interstitial material rich in alkalis and SiO2; and twinned low-Ca clinopyroxene.

Keil, K.↗

NASA NTRS1973

Fluid and Electrolyte Balance model (FEB)

The effects of various oral input water loads on solute and water distribution throughout the body are presented in the form of a model. The model was a three compartment model; the three compartments being plasma, interstitial fluid and cellular fluid. Sodium, potassium, chloride and urea were the only major solutes considered explicitly. The control of body water and electrolyte distribution was affected via drinking and hormone levels.

Fitzjerrell, D. G.↗

NASA NTRS1973

A simple model of fluid flow and electrolyte balance in the body

The model is basically a three-compartment model, the three compartments being the plasma, interstitial fluid and cellular fluid. Sodium, potassium, chloride and urea are the only major solutes considered explicitly. The control of body water and electrolyte distribution is affected via drinking and hormone levels. Basically, the model follows the effect of various oral input water loads on solute and water distribution throughout the body.

White, R. J.↗

NASA NTRS1979

Material science and solid state physics studies with positive muon spin precession

The hyperfine field on the muon, B sub hf, at interstitial sites in dilute Fe(Al) alloys was measured for four different concentrations of Al and as a function of temperature by the muon spin rotation method. The magnitude of B sub hf, which is negative, decreases at rates ranging from 0.09 + or - 0.03% per at.% Al at 200 K to an asymptotic limit of 0.35 + or - far above 440 K. This behavior shows that sites near the Al impurity are weakly repulsive to the muon, with an interaction potential of 13 + or - 3 meV. In order to fit the temperature dependence of the hyperfine field, it is necessary to hypothesize the existence of a small concentration of unidentified defects, possibly dislocations, which are attractive to the muon. Although the Al impurity acts as a non-magnetic hole in the Fe lattice, the observed decrease in B sub hf is only 35% of the decrease in the bulk magnetization. It is concluded that B sub hf is determined mainly by the enhanced screening of conduction electrons in Fe and Fe(Al). Since the influence of the Al impurity on the neighboring Fe monents is very small, most of the change in B sub hf is therefore attributed to the increase in conduction electron polarization of the Al impurity.

Stronach, C. E.↗

NASA NTRS1979

High-energy electron-induced damage production at room temperature in aluminum-doped silicon

DLTS and EPR measurements are reported on aluminum-doped silicon that was irradiated at room temperature with high-energy electrons. Comparisons are made to comparable experiments on boron-doped silicon. Many of the same defects observed in boron-doped silicon are also observed in aluminum-doped silicon, but several others were not observed, including the aluminum interstitial and aluminum-associated defects. Damage production modeling, including the dependence on aluminum concentration, is presented.

Corbett, J. W.↗

NASA NTRS1978

Fluorescent accessory phases in the carbonaceous matrix of ureilites

The carbonaceous matrix of ureilite meteorites (C-bearing olivine-pigeonite achondrites) contain abundant minute phases that emit a multicolored fluorescence under electron bombardment. These include NaCl and KCl, found in all seven ureilites studied, high-Si glass with pyroxene and chlorapatite quench crystals in North Haig, an unidentified high-Ca-Al-Cl phase in Novo Urei, and possibly free SiO2 in Novo Urei and Dingo Pup Donga. The origin of these phases is uncertain but some, especially chlorides and glass, may represent residual postcumulus materials precipitated from a late-stage interstitial liquid during the igneous phase of ureilite history.

Berkley, J. L.↗

NASA NTRS1978

Melt inclusions in Luna 24 soil fragments

Optical examinations of 28 slides of Luna 24 soil fragments revealed melt inclusions in grains of olivine, plagioclase, spinel, and ilmenite as well as interstitial inclusions. In contrast with Apollo samples, the Luna 24 samples contain sulfide melt inclusions, which indicates that saturation with respect to an iron sulfide melt took place throughout much of the crystallization history, even while olivine was crystallizing. The Luna 24 silicate-melt inclusions have recorded a more extensive differentiation toward higher iron magmas than have the Apollo inclusions, but they have also recorded some inexplicably low aluminum values.

Roedder, W.↗

NASA NTRS1978

Genesis of Apollo 15 olivine normative mare basalts - Trace element correlations

Chemical and petrographic studies of 21 Apollo 15 rake basalts are reported; one pyroxene-phyric basalt, four olivine-phyric basalts, 15 olivine microgabbros, and one brecciated basalt are distinguished. The olivine-normative basalts (i.e., all samples but the pyroxene-phyric basalt) show correlation trends of La/Sm vs. La and Sm/Eu vs. La that are within the observed dispersion ranges of La/Sm and Sm/Eu ratios for a single lava flow. Trace element fractionation trends in the sample could be due to mobilization (perhaps by filter pressing) of fractionated residual liquid during the crystallization of a lava flow. However, it is also possible that the suite of olivine-normative basalts represents several basalt flows produced by partial melting of cumulate layers having interstitial liquids with variable trace-element compositions.

Ma, M.-S.↗

NASA NTRS1980

Studies of H2O on beta-AgI surfaces - An effective pair potential model

The adsorption of a water molecule on surfaces of beta-AgI, the hexagonal crystal believed to be primarily responsible for the ice-nucleating properties of AgI, is studied on the basis of an effective pair potential model. The water molecule is represented by a rigid point charge ST-2 model and the AgI substrate by an array of point atoms, and maximal binding energy surfaces and optimal H2O configurations are generated for the water molecule adsorbed on the rigid and unrelaxed basal and prism faces. Modeling of H2O adsorption above a two-layer ledge, an iodine vacancy and an H2O molecule trapped in the vacancy indicates that H2O adsorption is favored at interstitial sites where no substrate atoms lie directly below. The prism face is found to attract the water molecule more strongly and provide larger energy barriers to surface diffusion than basal face sites, with the ideal basal faces providing hexagonal patterns of adsorption sites for the H2O with preferred dipole moments aligned.

Hale, B. N.↗

NASA NTRS1981

Reduced annealing temperatures in silicon solar cells

Cells irradiated to a fluence of 5x10,000,000,000,000/square cm showed short circuit current on annealing at 200 C, with complete annealing occurring at 275 C. Cells irradiated to 100,000,000,000,000/square cm showed a reduction in annealing temperature from the usual 500 to 300 C. Annealing kinetic studies yield an activation energy of (1.5 + or - 2) eV for the low fluence, low temperature anneal. Comparison with activation energies previously obtained indicate that the presently obtained activation energy is consistent with the presence of either the divacancy or the carbon interstitial carbon substitutional pair, a result which agrees with the conclusion based on defect behavior in boron-doped silicon.

Weinberg, I.↗

NASA NTRS1980

Photodegradation in silicon

The state of knowledge concerning the following defects in silicon is briefly surveyed: substitutional impurities; vacancy-related defects; interstitial-related defects; defect pairs. Although a great deal is known, it is argued that not enough is yet known to model radiation damage production in the bulk or in the vicinity of the junction of a solar cell. The results on photon degradation (and enhancement) of solar cells are then reviewed, and it is suggested that defect pairs may be the defects responsible. Mechanisms for photon-induced dissociation of pairs are discussed but a more detailed understanding awaits the identification of the actual defects.

Corbett, J. W.↗

NASA NTRS1981

Ionic conductivity and thermoelectric power of pure and Al2O3-dispersed AgI

Ionic and electronic conductivities, and thermoelectric power have been measured for AgI and AgI containing a dispersion of submicron size Al2O3 particles. While the dispersion of Al2O3 enhances the ionic conductivity significantly, it does not affect the electronic properties of the matrix. The enhancement is a strong function of the size and concentration of the dispersoid. Various models have been tested to account for the enhanced conduction. However, the complex behavior of the present results points out the need for more sophisticated theoretical models. Ionic conduction and thermoelectric power data suggest that the dispersed Al2O3 generates an excess of cation vacancies and thereby enhances the conductivity and suppresses the thermoelectric power of the matrix. The individual heats of transport of cation interstitials and vacancies have been estimated and compared to their respective migration energies.

Shahi, K.↗

NASA NTRS1981

Hemodilution, vasopressin suppression, and diuresis during water immersion in man

The possible role of hemodilution in the early stages of water immersion in the suppression of antidiuretic hormone (vasopressin) and subsequent diuresis in man is investigated. Parameters characterizing hemodilution as well as water balance and intercompartmental fluid levels were measured before, during and after the immersion of ten subjects in a semireclining position in tap water up to their necks at 34.6 C for 8 hr. Results indicate that hemodilution and the suppression of vasopressin and plasma renin activity were present by the second hour of immersion, with the early hemodilution due to a slight increase in plasma volume with no change in plasma sodium or osmotic contents, even though urine volume and osmotic excretion rates increased significantly. Hyponatremia, hyposmotemia and plasma renin activity suppression are observed to continue to the end of immersion, resulting in final decreases of 15.6% in plasma volume, 18.8% in extracellular volume, 19.6% in interstitial volume and 10.7% in red cell volume. Findings suggest the transfer of hypotonic fluid into the vascular system, which contributes to vasopressin suppression observed during immersion.

Greenleaf, J. E.↗

NASA NTRS1981

Annealing and anomalous high-energy electron irradiation effects in low-cost silicon N+P solar cells

Silicon solar cells of N(+)P type were subjected to 1 MeV electron irradiation (up to 10 to the 16th electrons/sq cm) and then annealed at 450 C for 20 min or annealed with no electron irradiation. Electron irradiation resulted in a degradation of longer wavelength cell response, but produced a marked enhancement of response at shorter wavelengths with a peak change of 40% at 0.44 microns. Subsequent thermal anneal at 450 C reduced the long-wavelength degradation, but enhancement at shorter wavelengths persisted. Excitation at the shorter wavelengths was in the N(+)-diffused layer and in the junction region of the cell. Anneal of unirradiated cells produced shorter-wavelength enhancement with a similar peaking at 0.44 microns, but with a relative change of only 20%. More enhancement was produced in the longer wavelength region (up to 0.8 microns). These effects in the different cell regions are explained by a decrease in the interstitial oxygen-impurity complexes (deep recombination levels) and the formation of substantial oxygen-silicon vacancy centers (donors).

Garlick, G. F. J.↗

NASA NTRS1981

Large area silicon sheet by EFG

The influence of parameters such as CO2 concentration, gas flow patterns, quartz in the bulk melt, melt doping level and growth speed on ribbon properties was examined for 10 cm wide ribbon. Ribbon quality is optimized for ambient CO2 in argon concentrations in the range from 1000 to 5000 ppm. Cell performance degrades at CO2 concentrations above 5000 ppm and IR interstitial oxygen levels decrease. These experiments were done primarily at a growth speed of 3.5 cm/minute. Cartridge parameters influencing the ribbon thickness were studied and thickness uniformity at 200 micrometers (8 mils) has been improved. Growth stability at the target speed of 4.0 cm/minute was improved significantly.

Source record↗

NASA NTRS1981

Defect chemistry and characterization of (Hg, Cd)Te

Single crystal samples of phosphorus doped Hg sub 0.8 Cd sub 0.2 Te were anneald at temperatures varying from 450 C to 600 C in various Hg atmospheres. The samples were quenched to room temperature from the annealing temperatures. Hall effect and mobility measurements were performed at 77 K on all these samples. The results indicate the crystals to be p type for a total phosphorus concentration of 10 to the 19th power/cu cm in all the samples. The hole concentration at 77 K increases with increasing Hg pressures at 450 C and 500 C contrary to the observation in undoped crystals. Also, at low Hg pressures the concentration of holes in the phosphorus doped crystals is lower than in the undoped crystals. The hole concentration in all the samples is lower than the intrinsic carrier concentration at the annealing temperatures. The hole mobility in the doped crystals is similar to that in the undoped crystals. A defect model according to which phosphorus behaves as a single acceptor interstitially, occupying Te lattice sites while it acts as a single donor occupying Hg lattice sites was established. Equilibrum constants established for the incorporation of all the phosphorus species explain the experimental results

Vydyanath, H. R.↗

NASA NTRS1982

Defect chemistry and characterization of Hg sub 1x Cd sub x Te

Single crystal samples of undoped and doped Hg sub 1-x Cd sub x Te were annealed at varying temperatures and partial pressures of Hg. Hall effect and mobility measurements were carried out on these samples after quenching to room temperature. Based on the variation of the carrier concentration and the carrier mobility as a function of the partial pressure of Hg temperature, and dopant concentration, defect models were established for the doped and the undoped crystals. These models indicate that the native acceptor defects in both Hg0.8Cd0.2Te and Hg0.6Cd0.4Te doubly ionized and the native donor defects are negligible in concentration, implying that p to n conversion in these alloys occurs due only to residual donors. Incorporation mechanism of copper, indium, iodine, and phosphorus were investigated. A large concentration of indium is found to be paired with the native acceptor defects. Results on crystals doped with phosphorus indicate that phosphorus behaves amphoterically, acting as a donor on Hg lattice sites and as an acceptor intersitially on Te lattice sites. A majority of the phosphorus is found to be present as neutral species formed from the pairing reaction between phosphorus on Hg lattice sites and phosphorus in interstitial sites. Equilibrium constants for the intrinsic excitation reaction, as well as for the incorporation of the different dopants and the native acceptor defects were established.

Vydyanath, H. R.↗

NASA NTRS1981

Metal/silicon interface formation - The Ni/Si and Pd/Si systems

The valence level spectra of the Ni/Si and Pd/Si systems have been investigated using high resolution X-ray photoelectron spectroscopy. Temperature dependence studies for Ni deposited on thin thermal SiO2 demonstrate the importance of metal aggregation effects in the interpretation of binding energies as chemical shifts. Temperature studies for the Ni/Si system indicate that substantial chemical interaction occurs at the interface at temperatures as low as 100 K. These studies also show the presence of Ni in interstitial voids in the Si near the interface. A comparative study of the core and valence band features for the Ni and Pd silicides provides many valuable insights and a self-consistent picture of the attendent valence charge redistribution and its influence on the observed chemical shifts.

Grunthaner, P. J.↗