Search NASA⌕ Search

SEARCH · Search NASA

Results for “ion beams”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 217 records · Page 12
All sourcesNASA NTRSDOE OSTI
NASA NTRS1985

Ion-beam nitriding of steels

The application of the ion beam technique to the nitriding of steels is described. It is indicated that the technique can be successfully applied to nitriding. Some of the structural changes obtained by this technique are similar to those obtained by ion nitriding. The main difference is the absence of the iron nitride diffraction lines. It is found that the dependence of the resultant microhardness on beam voltage for super nitralloy is different from that of 304 stainless steel.

Salik, J.↗
NASA NTRS1994

Atomic Oxygen (ATOX) simulation of Teflon FEP and Kapton H surfaces using a high intensity, low energy, mass selected, ion beam facility

A high intensity (greater than 10(exp 15) ions/sq cm) low energy (down to 5 eV) mass selected ion beam (MSIB) facility was used to study the effects of ATOX on two polymers commonly used for space applications (Kapton H and Teflon FEP). The polymers were exposed to O(+) and Ne(+) fluences on 10(exp 15) - 10(exp 19) ions/sq cm, using 30eV ions. A variety of analytical methods were used to analyze the eroded surfaces including: (1) atomic force microscopy (AFM) for morphology measurements; (2) total mass loss measurements using a microbalance; (3) surface chemical composition using x-ray photoelectron spectroscopy (XPS), and (4) residual gas analysis (RGA) of the released gases during bombardment. The relative significance of the collisional and chemical degradation processes was evaluated by comparing the effects of Ne(+) and O(+) bombardment. For 30 eV ions it was found that the Kapton is eroded via chemical mechanisms while Teflon FEP is eroded via collisional mechanisms. AFM analysis was found very powerful in revealing the evolution of the damage from its initial atomic scale (roughness of approx. 1 nm) to its final microscopic scale (roughness greater than 1 micron). Both the surface morphology and the average roughness of the bombarded surfaces (averaged over 1 micron x 1 micron images by the system's computer) were determined for each sample. For 30 eV a non linear increase of the Kapton roughness with the O(+) fluence was discovered (a slow increase rate for fluences phi less than 5 x 10(exp 17) O(+)/sq cm, and a rapid increase rate for phi greater than 5 x 10(exp 17) O(+)/sq cm). Comparative studies on the same materials exposed to RF and DC oxygen plasmas indicate that the specific details of the erosion depend on the simulation facility emphasizing the advantages of the ion beam facility.

Vered, R.↗
DOE OSTI2020

Focused ion beam deposited carbon-platinum nanowires for cryogenic resistive thermometry

The study of thermal effects, both classical and quantum, at cryogenic temperatures requires the use of on-chip, local, high-sensitivity thermometry. Carbon-platinum composites fabricated using focused ion beam (FIB) assisted deposition form a granular structure which is shown in this study to be uniquely suited for this application. Carbon-platinum thermometers deposited using a 24 pA ion beam current have high sensitivities below 1 K, comparable to the best cryogenic thermometers. In addition, these thermometers can be accurately placed to within 10s of nanometers on the chip using a mask-free process. Furthermore, they also have a weak magnetic field dependence, 3% change in resistance with applied magnetic fields from 0 to 8 T. Finally, these thermometers are integrable into a variety of nanoscale devices due to the existing wide spread use of FIB.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
NASA NTRS1990

Heating of the polar wind due to ion beam instabilities

Recent DE 1 observations (Chen et al., 1990) in the polar cap region have detected upflowing field-aligned O(+) and H(+) beams of about 10 eV energy; it was suggested that these beams may interact with the polar wind and provide free energy to the polar wind which will alter its 'classical' description. This paper investigates both the linear and the nonlinear effects of upflowing O(+) and H(+) ion beams on an O(+) and H(+) polar wind by applying isotropic Maxwellian distributions for modeling the O(+) and H(+) polar-wind ions and using drifting Maxwellian distributions for the electrons, O(+), and H(+) beam ions. It is shown that, in the presence of O(+) and H(+) beams, the slow ion acoustic and slow ion cyclotron modes can couple to the normal modes of the plasma and be driven unstable. The O(+) ions are preferentially heated over the H(+) ions; this preferential heating couses enhanced outflow of O(+) ions along polar cap field lines by effectively increasing the O(+) scale height.

Chen, Margaret W.↗
NASA NTRS1989

DBR laser with nondynamic plasma grating formed by focused ion beam implanted dopants

A static plasma grating has been demonstrated experimentally (Wu et al., 1988) in a large-optical-cavity focused-ion-beam-distributed-Bragg-reflector (FIB-DBR) GaAlAs/GaAs laser diode. The grating is formed by implanting stripes of dopants with a focused ion beam. The dopants ionize to form periodic fluctuations in the carrier concentration which, through the Kramers-Kronig relations, form an index grating. A model of the grating strength for optimizaton of the laser design is developed and presented. The computed results show that the coupling coefficient k can be increased by more than an order of magnitude over the 15/cm experimentally. Therefore, FIB-DBR or FIB-distributed-feedback (DFB) lasers with performance comparable to that of conventional DBR (or DFB) lasers can be expected.

Boenke, Myra M.↗
DOE OSTI2023

Controlled semiconductor quantum dot fabrication utilizing focus ion beam

In this project, we experimented the focused ion beam (FIB) based fabrications of semiconductor quantum dots (QDs) by using metal nano particles (NPs) (e.g., Al) on semiconductor as a template and by means of the FIB induced direct metal-to-QD conversion. We have examined effect of the experimental conditions, including Ga + ion energy and dose as well as substrate temperature. The results of experiments have shown AlGaSb QD formation on GaSb substrate can be achieved under certain conditions but there are many challenges about the techniques, including compositional nonuniformity of the QDs formed, partial conversion of the metal NP to QD, and high defect concentration in the QDs.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
NASA NTRS1993

MeV ion-beam analysis of optical data storage films

Our objectives are threefold: (1) to accurately characterize optical data storage films by MeV ion-beam analysis (IBA) for ODSC collaborators; (2) to develop new and/or improved analysis techniques; and (3) to expand the capabilities of the IBA facility itself. Using H-1(+), He-4(+), and N-15(++) ion beams in the 1.5 MeV to 10 MeV energy range from a 5.5 MV Van de Graaff accelerator, film thickness (in atoms/sq cm), stoichiometry, impurity concentration profiles, and crystalline structure were determined by Rutherford backscattering (RBS), high-energy backscattering, channeling, nuclear reaction analysis (NRA) and proton induced X-ray emission (PIXE). Most of these techniques are discussed in detail in the ODSC Annual Report (February 17, 1987), p. 74. The PIXE technique is briefly discussed in the ODSC Annual Report (March 15, 1991), p. 23.

Leavitt, J. A.↗
NASA NTRS1978

Adaptation of ion beam technology to microfabrication of solid state devices and transducers

A number of areas were investigated to determine the potential uses of ion beam techniques in the construction of solid state devices and transducers and the packaging of implantable electronics for biomedical applications. The five areas investigated during the past year were: (1) diode-like devices fabricated on textured silicon; (2) a photolithographic technique for patterning ion beam sputtered PVC (polyvinyl chloride); (3) use of sputtered Teflon as a protective coating for implantable pressure sensors; (4) the sputtering of Macor to seal implantable hybrid circuits; and (5) the use of sputtered Teflon to immobilize enzymes.

Topich, J. A.↗
NASA NTRS1986

A study of target heating in low-energy ion-beam processing

A bonded thermocouple approach is employed to accurately determine semiconductor surface heating profiles as a function of energy, position, and gas species in a high-current low-energy ion beam etching system. The total beam current is kept at 200 mA and the extractor voltage at 300 V. It is found that the ionic species, the radial position in the ion beam, and the kinetic energy of the ions, all of which effect the ion current density, must be taken into account in recording the temperature rise of the bombarded surface. It is also noted that the occurrence of this temperature rise is dependent on the thermal contacts and heat sinking.

Ringel, S. A.↗
NASA NTRS1985

Electrostatic ion cyclotron waves in a plasma with an ion beam and counterstreaming bulk electrons - Waves in the zero-frequency band

A common feature of the auroral plasma in the region above field-aligned (parallel) potential drops are electrostatic hydrogen cyclotron (EHC) waves. The present paper has the objective to show that wave excitation in the zero-frequency band can occur when the ion beams and the current-carrying bulk electrons counterstream. The instability mechanism involves the Landau interaction of the slow (negative energy) ion-beam-cyclotron waves with the drifting electrons and also with the target (background) ions. Only the latter resonant interaction between the beam and the target ions was considered by Okuda and Nishikawa (1984). In this study, it is shown that an electron drift makes an additional unstable contribution to the waves in the zero-frequency band, including those discussed by Okuda and Nishikawa.

Singh, N.↗
NASA NTRS2005

METHOD OF PRODUCING AND ACCELERATING AN ION BEAM

A method of producing and accelerating an ion beam comprising the steps of providing a magnetic field with a cusp that opens in an outward direction along a centerline that passes through a vertex of the cusp: providing an ionizing gas that sprays outward through at least one capillary-like orifice in a plenum that is positioned such that the orifice is on the centerline in the cusp, outward of the vortex of the cusp; providing a cathode electron source, and positioning it outward of the orifice and off of the centerline; and positively charging the plenum relative to the cathode electron source such that the plenum functions as m anode. A hot filament may be used as the cathode electron source, and permanent magnets may be used to provide the magnetic field.

Foster, John E.↗
NASA NTRS2001

Fast prototyping of high-aspect ratio, high-resolution x-ray masks by gas-assisted focused ion beam

The capacity of chemically-assisted focused ion beam (fib) etching systems to undertake direct and highly anisotropic erosion of thin and thick gold (or other high atomic number [Z])coatings on x-ray mask membranes/substrates provides new levels of precision, flexibility, simplification and rapidity in the manufacture of mask absorber patterns, allowing the fast prototyping of high aspect ratio, high-resolution masks for deep x-ray lithography.

fast prototyping of high-aspect ratio high-resolut↗
DOE OSTI2023

High–Yield Deterministic Focused Ion Beam Implantation of Quantum Defects Enabled by In Situ Photoluminescence Feedback

Focused ion beam implantation is ideally suited for placing defect centers in wide bandgap semiconductors with nanometer spatial resolution. However, the fact that only a few percent of implanted defects can be activated to become efficient single photon emitters prevents this powerful capability to reach its full potential in photonic/electronic integration of quantum defects. Here an industry adaptive scalable technique is demonstrated to deterministically create single defects in commercial grade silicon carbide by performing repeated low ion number implantation and in situ photoluminescence evaluation after each round of implantation. An array of 9 single defects in 13 targeted locations is successfully created—a ≈70% yield which is more than an order of magnitude higher than achieved in a typical single pass ion implantation. The remaining emitters exhibit non-classical photon emission statistics corresponding to the existence of at most two emitters. This approach can be further integrated with other advanced techniques such as in situ annealing and cryogenic operations to extend to other material platforms for various quantum information technologies.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Nozzle geometry optimization for high-current aluminum ion beam acceleration via direct plasma injection scheme

We report the generation of a record aluminum ion beam current exceeding 58 mA at the Al 11+ charge state, accelerated to an energy of 5.5 MeV using the direct plasma injection scheme, which integrates a laser ion source (LIS) with a radio frequency quadrupole (RFQ) accelerator. The effect of nozzle geometry on beam extraction was systematically investigated using 8 and 12 mm tapered designs and an 18 mm cylindrical configuration. The 18 mm nozzle achieved the highest Al 11+ beam current, while the 12 mm aperture provided a favorable balance between beam intensity and current density. Beam extraction simulations confirmed effective RFQ matching across multiple charge states, and solenoidal field tuning further enhanced plasma collimation. This work not only establishes a new benchmark for high-current ion beam generation but also provides a fundamental understanding of plasma–beam interface dynamics crucial for the next generation of high-intensity particle accelerators, particularly those employing LIS-RFQ systems.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
NASA NTRS1981

Ion beam applications research - A 1981 summary of Lewis Research Center programs

In 1975 the NASA's Lewis Research Center initiated a technology specific spinoff program to more broadly utilize benefits resulting from ion thruster technology. An Ion Beam Applications Research (IBAR) program was organized to enable the development of new or improved materials, products, and processes through the nonpropulsive application of ion thruster technology. Focused efforts to identify, evaluate, develop and transfer applications to the user community were conducted. A summary of the NASA Lewis Research Center's in-house, grant, and contract projects involving IBAR is given. Specific application efforts utilizing ion beam sputter etching, deposition, and texturing are discussed as well as ion source and component technology applications.

Banks, B. A.↗
DOE OSTI2023

Hybrid Simulation of Proton Cyclotron Waves Upstream of Mars Generated by Pickup Ion Beam Distribution

Linear instability analysis as well as a corresponding two‐dimensional hybrid simulation are performed to examine the excitation of the proton cyclotron waves observed upstream of Mars. The waves are believed to be excited by the pickup ions produced from the ionization of the Martian hydrogen exosphere. And previous statistical analysis of wave observations suggested that the waves are mostly related to pickup ion beam velocity distributions. While earlier linear instability analysis of pickup ion beam distributions has mainly been focused on the parallel unstable modes, our analysis reveals that the maximum growth rate occurs at very oblique propagation. The corresponding hybrid simulation confirms the linear analysis results and further demonstrates that the pickup ions are scattered toward an isotropic shell velocity distribution by the waves excited. Interestingly, the waves at oblique propagation gradually damp out and the system is eventually dominated by waves of quasi‐parallel propagation.

79 ASTRONOMY AND ASTROPHYSICS↗