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At least 217 records · Page 12

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NASA NTRS1989

Edge geometry superconducting tunnel junctions utilizing an NbN/MgO/NbN thin film structure

An edge defined geometry is used to produce very small area tunnel junctions in a structure with niobium nitride superconducting electrodes and a magnesium oxide tunnel barrier. The incorporation of an MgO tunnel barrier with two NbN electrodes results in improved current-voltage characteristics, and may lead to better junction noise characteristics. The NbN electrodes are preferably sputter-deposited, with the first NbN electrode deposited on an insulating substrate maintained at about 250 to 500 C for improved quality of the electrode.

Hunt, Brian D.↗

NASA NTRS1990

Electromagnetic scattering from two-dimensional thick material junctions

The problem of the plane wave diffraction is examined by an arbitrary symmetric two dimensional junction, where Generalized Impedance Boundary Conditions (GIBCs) and Generalized Sheet Transition Conditions (GSTCs) are employed to simulate the slabs. GIBCs and GSTCs are constructed for multilayer planar slabs of arbitrary thickness and the resulting GIBC/GSTC reflection coefficients are compared with exact counterparts to evaluate the GIBCs/GSTCs. The plane wave diffraction by a multilayer material slab recessed in a perfectly conducting ground plane is formulated and solved via the Generalized Scattering Matrix Formulation (GDMF) in conjunction with the dual integral equation approach. Various scattering patterns are computed and validated with exact results where possible. The diffraction by a material discontinuity in a thick dielectric/ferrite slab is considered by modelling the constituent slabs with GSTCs. A non-unique solution in terms of unknown constants is obtained, and these constants are evaluated for the recessed slab geometry by comparison with the solution obtained therein. Several other simplified cases are also presented and discussed. An eigenfunction expansion method is introduced to determine the unknown solution constants in the general case. This procedure is applied to the non-unique solution in terms of unknown constants; and scattering patterns are presented for various slab junctions and compared with alternative results where possible.

Ricoy, M. A.↗

NASA NTRS1990

A superconducting tunnel junction receiver for 345 GHz

The design, fabrication, and testing of a quasi-particle tunnel junction receiver for use at 345 GHz are discussed. The design employs small area Nb/Nb-oxide/PbInAu edge junctions in order to keep the device capacitance small and maintain a modest value for omega R(N)C. For optimum noise performance and beam properties the mixer is contained in a waveguide mounting structure. The best sensitivity was obtained at 312 GHz where a double sideband (DSB) noise temperature of 275 K was measured. Noise temperatures of 400 K (DSB) or better were obtained out to 350 GHz.

Sutton, E. C.↗

NASA NTRS1990

Reflecting boundary conditions for graded p-n junctions

In a graded junction, the formalism for handling reflecting boundary conditions must be modified. Since a significant drift term is present, zero recombination velocity at the surface does not imply a zero excess carrier gradient but rather zero overall flux. A model for analyzing p-n junctions fabricated by implantation or diffusion is presented, assuming the dominant recombination mechanism in the graded region is Auger. The model enables optimization of diode design. By proper selection of parameters, mainly by reducing surface concentration or by increasing the steepness of the dopant profile, it is possible to drastically reduce the saturation current generated by the graded region.

Schacham, S. E.↗

NASA NTRS1990

Surface and implantation effects on p-n junctions

The contribution of the graded region of implanted p-n junctions is analyzed using an exponential profile. Though previously neglected, it was recently shown that this contribution to the saturation current of HgCdTe diodes is significant. Assuming a dominant Auger recombination, an analytical solution to the continuity equation is obtained. An expression for the current generation by the graded region is presented for both ohmic and reflecting boundary conditions. A revised condition for a wide region is derived. When the region is narrow, the current differs drastically from that of the zero-gradient case. The effects of the junction depth and the substrate and surface concentrations on the current are investigated. It is shown that the reverse current does not saturate.

Schacham, Samuel E.↗

NASA NTRS1991

Progress in GaAs/CuInSe2 tandem junction solar cells

Much more power is required for spacecraft of the future than current vehicles. To meet this increased demand for power while simultaneously meeting other requirements for launch, deployment, and maneuverability, the development of higher-efficiency, lighter-weight, and more radiation resistant photovoltaic cells is essential. Mechanically stacked tandem junction solar cells based on (AlGaAs)GaAs thin film CLEFT (Cleavage of Lateral Epitaxial Film for Transfer) top cells and CuInSe2(CIS) thin film bottom cells are being developed to meet these power needs. The mechanically stacked tandem configuration is chosen due to its interconnect flexibility allowing more efficient array level performance. It also eliminates cell fabrication processing constraints associated with monolithically integrated multi-junction approaches, thus producing higher cell fabrication yields. The GaAs cell is used as the top cell due to its demonstrated high efficiency, and good radiation resistance. Furthermore, it offers a future potential for bandgap tuning using AlGaAs as the absorber to maximize cell performance. The CuInSe2 cell is used as the bottom cell due to superb radiation resistance, stability, and optimal bandgap value in combination with an AlGaAs top cell. Since both cells are incorporated as thin films, this approach provides a potential for very high specific power. This high specific power (W/kg), combined with high power density (W/sq m) resulting from the high efficiency of this approach, makes these cells ideally suited for various space applications.

Kim, N. P.↗

NASA NTRS1991

Quantum correlation between the junction-voltage fluctuation and the photon-number fluctuation in a semiconductor laser

The photon-number fluctuation of the external field from a semiconductor laser - which was reduced to below the standard quantum limit - is shown to be correlated with the measured junction-voltage noise. The spectral density of the sum of the photon-number fluctuation and junction-voltage fluctuation falls below the squeezed photon-number fluctuation. This confirms the theoretical predictions that this correlation, which originates in the dipole interaction between the internal field and electron-hole pairs, extends into the quantum regime.

Richardson, W. H.↗

NASA NTRS1991

High-voltage 6H-SiC p-n junction diodes

A chemical vapor deposition (CVD) process has been used to produce device structures of n- and p-type 6H-SiC epitaxial layers on commercially produced single-crystal 6H-SiC wafers. Mesa-style p-n junction diodes were successfully fabricated from these device structures using reactive ion etching, oxide passivation, and electrical contact metallization techniques. When tested in air, the 6H-SiC diodes displayed excellent rectification characteristics up to the highest temperature tested, 600 C. To observe avalanche breakdown of the p-n junction diodes, testing under a high-electrical-strength liquid was necessary. The avalanche breakdown voltage was 1000 V representing the highest reverse breakdown voltage to be reported for any CVD-grown SiC diode.

Matus, L. G.↗

NASA NTRS1992

Edge geometry superconducting tunnel junctions utilizing an NbN/MgO/NbN thin film structure

Hunt, Brian D.↗

NASA NTRS1992

Sub micron area Nb/AlO(x)/Nb tunnel junctions for submillimeter mixer applications

In this paper, we report on a fabrication process developed for submicron area tunnel junctions. We have fabricated Nb/AlO(x)/Nb tunnel junctions with areas down to 0.1 sq micron using these techniques. The devices have shown excellent performance in receiver systems up to 500 GHz and are currently in use in radio astronomy observatories at 115, 230, and 500 GHz.

Leduc, Henry G.↗

NASA NTRS1992

Parallel arrays of Josephson junctions for submillimeter local oscillators

In this paper we discuss the influence of the DC biasing circuit on operation of parallel biased quasioptical Josephson junction oscillator arrays. Because of nonuniform distribution of the DC biasing current along the length of the bias lines, there is a nonuniform distribution of magnetic flux in superconducting loops connecting every two junctions of the array. These DC self-field effects determine the state of the array. We present analysis and time-domain numerical simulations of these states for four biasing configurations. We find conditions for the in-phase states with maximum power output. We compare arrays with small and large inductances and determine the low inductance limit for nearly-in-phase array operation. We show how arrays can be steered in H-plane using the externally applied DC magnetic field.

Pance, Aleksandar↗

NASA NTRS1993

Investigation of three-dimensional separation at wing/body junctions in supersonic flows using TVD MacCormack's scheme

A Total Variation Diminishing (TVD) MacCormack scheme is used to study the three-dimensional separation at wing/body junctions in supersonic flows. The new scheme is robust, resolves discontinuities well with-out any numerical oscillations present in the flow field. Moreover, this new scheme does not contain any problem dependent parameters to be adjusted and many production codes employing MacCormack algorithm can be easily updated to good effect. Numerical simulation carried out in laminar supersonic junction flows using the new scheme yields improved prediction for the separation location and the axial velocity profiles in the separated flow region.

Lakshmanan, B.↗

NASA NTRS1992

Optimization of niobium tunnel junctions as X-ray detectors

We report on our ongoing work using Nb/Al/AlO(x)/Nb junctions for the detection of X-rays. Detectors based on superconducting tunneling junctions offer the prospect of resolution over an order of magnitude higher than is obtainable with the current generation of semiconductor-based detectors. Results of measurements taken at 1.85 K (a temperature achievable with current space flight technology) include the current-voltage (I-V) curve, subgap current vs temperature, the dependence of the superconducting current on the applied magnetic field (Fraunhofer pattern), X-ray pulses, and the spectra from a 6 keV X-ray source which gave an intrinsic device resolution of approximately 700 eV. The collection of more than 10 exp 5 electrons per 6 keV photon is established.

Saulnier, Gregory G.↗

NASA NTRS1993

Study of supersonic intersection flowfield at modified wing-body junctions

The problem of supersonic flow control using fillets and sweep for a wing-body junction has been investigated numerically using a three-dimensional Navier-Stokes code, which employs the MacCormack's time-split finite volume technique. An elliptic grid generation technique with direct control over spacing has been developed for constructing the grid at a filleted wing-body junction. The computed results for pressure distribution, particle paths, and limiting streamlines on the flat plate and fin surface for a swept fin show a decrease in the peak pressure on the fin leading edge and in the extent of the separated flow region. Moreover, the results for filleted juncture clearly show that the flow streamline patterns lose much of their vortical character with proper filleting. It has been demonstrated that fillets with a radius of three-and-one-half times the fin leading-edge diameter are required to weaken the vorticity in the horseshoe vortex by a factor of three for the Mach number and Reynolds number considered in the present study.

Lakshmanan, B.↗

NASA NTRS1993

Greatly improved 3C-SiC p-n junction diodes grown by chemical vapor deposition

This paper reports the fabrication and initial electrical characterization of greatly improved 3C-SiC (beta-SiC) p-n junction diodes. These diodes, which were grown on commercially available 6H-SiC substrates by chemical vapor deposition, demonstrate rectification to -200 V at room temperature, representing a fourfold improvement in reported 3C-SiC diode blocking voltage. The reverse leakage currents and saturation current densities measured on these diodes also show significant improvement compared to previously reported 3C-SiC p-n junction diodes. When placed under sufficient forward bias, the diodes emit significantly bright green-yellow light. These results should lead to substantial advancements in 3C-SiC transistor performance.

Neudeck, Philip G.↗

NASA NTRS1993

High temperature annealing of minority carrier traps in irradiated MOCVD n(+)p InP solar cell junctions

Deep level transient spectroscopy was used to monitor thermal annealing of trapping centers in electron irradiated n(+)p InP junctions grown by metalorganic chemical vapor deposition, at temperatures ranging from 500 up to 650K. Special emphasis is given to the behavior of the minority carrier (electron) traps EA (0.24 eV), EC (0.12 eV), and ED (0.31 eV) which have received considerably less attention than the majority carrier (hole) traps H3, H4, and H5, although this work does extend the annealing behavior of the hole traps to higher temperatures than previously reported. It is found that H5 begins to anneal above 500K and is completely removed by 630K. The electron traps begin to anneal above 540K and are reduced to about half intensity by 630K. Although they each have slightly different annealing temperatures, EA, EC, and ED are all removed by 650K. A new hole trap called H3'(0.33 eV) grows as the other traps anneal and is the only trap remaining at 650K. This annealing behavior is much different than that reported for diffused junctions.

Messenger, S. R.↗

NASA NTRS1992

Comparative study of MacCormack and TVD MacCormack schemes for three-dimensional separation at wing/body junctions in supersonic flows

A robust, discontinuity-resolving TVD MacCormack scheme containing no dependent parameters requiring adjustment is presently used to investigate the 3D separation of wing/body junction flows at supersonic speeds. Many production codes employing MacCormack schemes can be adapted to use this method. A numerical simulation of laminar supersonic junction flow is found to yield improved separation location predictions, as well as the axial velocity profiles in the separated flow region.

Lakshmanan, Balakrishnan↗

NASA NTRS1995

Thermally stable, low resistance contact systems for use with shallow junction p(+) nn(+) and n(+)pp(+) InP solar cells

Two contact systems for use on shallow junction InP solar cells are described. The feature shared by these two contact systems is the absence of the metallurgical intermixing that normally takes place between the semiconductor and the contact metallization during the sintering process. The n(+)pp(+) cell contact system, consisting of a combination of Au and Ge, not only exhibits very low resistance in the as-fabricated state, but also yields post-sinter resistivity values of 1(exp -7) ohms-sq cm, with effectively no metal-InP interdiffusion. The n(+)pp(+)cell contact system, consisting of a combination of Ag and Zn, permits low resistance ohmic contact to be made directly to a shallow junction p/n InP device without harming the device itself during the contacting process.

Weizer, V. G.↗