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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 217 records · Page 12
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Chiral photocurrent in a Quasi-1D TiS 3 (001) phototransistor

The presence of in-plane chiral effects, hence spin–orbit coupling, is evident in the changes in the photocurrent produced in a TiS 3 (001) field-effect phototransistor with left versus right circularly polarized light. The direction of the photocurrent is protected by the presence of strong spin–orbit coupling and the anisotropy of the band structure as indicated in NanoARPES measurements. As hsown here, dark electronic transport measurements indicate that TiS 3 is n-type and has an electron mobility in the range of 1–6 cm 2 V –1 s –1 . I–V measurements under laser illumination indicate the photocurrent exhibits a bias directionality dependence, reminiscent of bipolar spin diode behavior. Because the TiS 3 contains no heavy elements, the presence of spin–orbit coupling must be attributed to the observed loss of inversion symmetry at the TiS 3 (001) surface.

Phototransistor Materials↗
DOE OSTI2022

Properties and device performance of BN thin films grown on GaN by pulsed laser deposition

Wide and ultrawide-bandgap semiconductors lie at the heart of next-generation high-power, high-frequency electronics. Here, in this paper, we report the growth of ultrawide-bandgap boron nitride (BN) thin films on wide-bandgap gallium nitride (GaN) by pulsed laser deposition. Comprehensive spectroscopic (core level and valence band x-ray photoelectron spectroscopy, Fourier-transform infrared spectroscopy, and Raman) and microscopic (atomic force microscopy and scanning transmission electron microscopy) characterizations confirm the growth of BN thin films on GaN. Optically, we observed that the BN/GaN heterostructure is second-harmonic generation active. Moreover, we fabricated the BN/GaN heterostructure-based Schottky diode that demonstrates rectifying characteristics, lower turn-on voltage, and an improved breakdown capability (~234 V) as compared to GaN (~168 V), owing to the higher breakdown electrical field of BN. Our approach is an early step toward bridging the gap between wide and ultrawide-bandgap materials for potential optoelectronics as well as next-generation high-power electronics.

42 ENGINEERING↗
DOE OSTI2021

Facile Measurement of the Rotation of a Single Optically Trapped Nanoparticle Using the Diagonal Ratio of a Quadrant Photodiode

Optical tweezers are a powerful tool for exploring physical properties of particles in various environments through analysis of their dynamics in a trapping potential. Analysis of the trapped particle's position is often done using interferometric back-focal-plane detection microscopy in which interference between the trapping laser and the light interacting with the trapped particle is projected on a quadrant photo-diode (QPD). The QPD measurements are almost universally the voltage ratios between the transverse components of the detector (left/right; up/down) that are calibrated to ascertain particle positions and orientations (i.e., rotation). In this paper, we demonstrate how measuring the diagonal ratio of the QPD allows tracking the spinning and orbital motion of optically trapped objects with enhanced sensitivity compared to the conventional transverse ratio and reveals additional information about particle dynamics. The diagonal ratio "balances" the signal from opposite sides of the QPD, allowing common mode noise reduction and increased measurement sensitivity of the rotating nanospheres at frequencies from below 200 Hz to above 15 kHz. We show that the variability in particle rotation rates is due to slight differences in the aspect ratio of the nanoparticles. We also measure in situ a gradual acceleration in the spinning frequency of trapped nanoparticles due to photothermal shedding of surface ligands and the resulting decrease of rotational friction in solution. The accelerating particles spin at rates exceeding 30 kHz and are eventually "optically printed" onto the glass coverslip on top of the liquid cell enclosure. The diagonal ratio is a simple, readily available, and powerful enabler for measuring rotational dynamics with a 5-fold sensitivity increase over conventional QPD measurements. This affords opportunities for controlling the orientational dynamics of trapped nanoparticles, which is crucial for various applications, including nanoscale mechanical motors.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Hybrid Organic Inorganic Perovskites: Physical Properties and Applications (in 4 Volumes)

This four-volume handbook gives a state-of-the-art overview of hybrid organic inorganic perovskites, both two dimensional (2D) and three dimensional (3D), from synthesis and characterization and simulation to optoelectronic devices (such as solar cells and light emitting diodes), spintronics devices and catalysis application. The editors, coming from academia and national laboratory, are known for their didactic skills as well as their technical expertise. Coordinating the efforts of 30 expert authors in 21 chapters, they construct the story of hybrid perovskite structural and optical properties, electronic and spintronic response, laser action, and catalysis from varied viewpoints: materials science, chemical engineering, and energy engineering. The four volumes are arranged according to the focus material properties. Volume 1 is focused on the material physical properties including structure, deposition characteristic and the structure of the electronic bands and excitons of these compounds. Volume 2 covers the hybrid perovskite optical properties including the ultrafast optical response, photoluminescence and laser action. Volume 3 contains the spin response of these compounds including application such as spin valves, photogalvanic effect, and magnetic response of light emitting diodes and solar cell devices. Finally, and highly relevant to tomorrow's energy challenges, volume 4 is focused on the physics and device properties of the most relevant applications of the hybrid perovskites, namely photovoltaic solar cells. The text contains many high-quality colorful illustrations and examples, as well as thousands of up-to-date references to peer-reviewed articles, reports and websites for further reading. This comprehensive and well-written handbook is a must-have reference for universities, research groups and companies working with the hybrid organic inorganic perovskites.

applications↗
DOE OSTI2023

Enhancement in electro-optic performance of InAlGaAs/GaAs quantum dot lasers by ex situ thermal annealing

Here, this Letter reports the growth, fabrication, and characterization of molecular beam epitaxy (MBE)-grown quaternary InAlGaAs/GaAs quantum dot (QD) lasers emitting at sub-900 nm. The presence of Al in QD-based active regions acts as the origin of defects and non-radiative recombination centers. Applying optimized thermal annealing annihilates the defects in p-i-n diodes, thus lowering the reverse leakage current by six orders of magnitude compared to as-grown devices. A systematic improvement in the optical properties of the devices is also observed in the laser devices with increasing annealing time. At an annealing temperature of 700°C for 180 s, Fabry–Pérot lasers exhibit a lower pulsed threshold current density at infinite length of 570 A/cm 2 .

42 ENGINEERING↗
DOE OSTI2021

Dynamics of laser-generated magnetic fields using long laser pulses

In this work, we report on the experimental investigation of magnetic field generation with a half-loop gold sheet coil driven by long-duration (10 ns) and high-power (0.5 TW) laser pulses. The amplitude of the magnetic field was characterized experimentally using proton deflectometry. The field rises rapidly in the first 1 ns of laser irradiation, and then increases slowly and continuously up to 10 ns during further laser irradiation. The transient dynamics of current shape were investigated with a two-dimensional (2D) numerical simulation that included Ohmic heating of the coil and the resultant change of electrical resistivity determined by the coil material temperature. The numerical simulations show rapid heating at the coil edges by current initially localized at the edges. This current density then diffuses to the central part of the sheet coil in a way that depends both on normal current diffusion as well as temporal changes of the coil resistance induced by the Ohmic heating. The measured temporal evolution of the magnetic field is compared with a model that determines a solution to the coil current and voltage that is consistent with a plasma diode model of the drive region and a 2D simulation of current diffusion and dynamic resistance due to Ohmic heating in the laser coil.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2021

Resistive AC-Coupled Silicon Detectors: principles of operation and first results from a combined analysis of beam test and laser data

This paper presents the principles of operation of Resistive AC-Coupled Silicon Detectors (RSDs) and measurements of the temporal and spatial resolutions using a combined analysis of laser and beam test data. RSDs are a new type of n-in-p silicon sensor based on the Low-Gain Avalanche Diode (LGAD) technology, where the n+ implant has been designed to be resistive, and the read-out is obtained via AC-coupling. The truly innovative feature of RSD is that the signal generated by an impinging particle is shared isotropically among multiple read-out pads without the need for floating electrodes or an external magnetic field. Careful tuning of the coupling oxide thickness and the n+ doping profile is at the basis of the successful functioning of this device. Several RSD matrices with different pad width-pitch geometries have been extensively tested with a laser setup in the Laboratory for Innovative Silicon Sensors in Torino, while a smaller set of devices have been tested at the Fermilab Test Beam Facility with a 120 GeV/c proton beam. The measured spatial resolution ranges between 2.5μm for 70–100 pad-pitch geometry and 17μm with 200–500 matrices, a factor of 10 better than what is achievable in binary read-out (bin size/12). Beam test data show a temporal resolution of ~40ps for 200 μm pitch devices, in line with the best performances of LGAD sensors at the same gain.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2020

Detecting keyhole porosity and monitoring process signatures in additive manufacturing: an in situ pyrometry and ex situ X-ray radiography correlation

Creation of pores and defects during laser powder bed fusion (LPBF) can lead to poor mechanical properties and thus must be minimized. Post-build inspection is required to ensure the printed parts contain acceptably low defect concentrations. These inspections are time consuming and costly, especially for large or complex parts. As a potential solution, in situ process monitoring can be used to detect the creation of defects, characterize local material behavior and predict expected component properties. However, the precise relationship between pore creation and in situ process monitoring still needs to be understood. In this work, high-speed infrared diode-based pyrometry and high-speed optical imaging signals were used to monitor LPBF printing of 446 stainless steel 316 L single tracks with varying laser power and velocity. Results indicate an increase in pyrometer signal and melt pool dimensions with increasing laser power and decreasing velocity in agreement with previous work. In addition, careful analysis of pyrometer signal reveals a distinct signature of the conduction-to-keyhole mode transition which was confirmed by metallography. Critically, pore defect initiation as characterized by ex situ X-ray radiography was correlated with in situ thermal monitoring signals to derive the probability of defect creation. Our results show that, in principle, a probabilistic prediction of pore formation can be achieved based on in situ high-speed pyrometry monitoring of the LPBF melt pool.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Optimization of DARHT Axis 1 Injector Voltage

The Dual-Axis Radiographic Hydrodynamic Test (DARHT) facility provides flash radiography capabilities using two electron Linear Induction Accelerators (LIA’s). Axis-1 of DARHT produces a 20- MeV, 2-kA, 80-ns-FWHM electron beam. The strict requirements for flash radiography require a detailed understanding of the LIA’s performance, including precision measurements of the injector electron beam energy. The technique for time resolved measurement of the electron beam energy using electron Permanent Magnet Spectrometer (ePMSpec) has been developed. The electron energy then is used to infer the voltage produced by the injector pulsed power. The injector pulsed power of DARHT I consists of a 1.5-MV, glycol-insulated Blumlein that is pulsecharged by a step-up transformer and switched by four, laser-triggered spark gaps. A series of increasing impedance transmission lines are used to transform the output voltage of the Blumlein to a maximum of 3.8MV at the diode. Figure 1a shows a graphic of the Axis-1 prime power tank, Blumlein and downstream transmission lines. The injector pulse power is designed to produce voltage on a velvet cathode located in the vacuum vessel. The specifications of the voltage-pulse flat-top over 60ns is +/-1%. A key element in the high-voltage circuit is the ethylene glycol Blumlein. The outer volume, adjacent to the laser triggered switches of the Blumlein, is a peaking capacitor. This is an independent volume that contains a mixture of ethylene glycol and water to make it an adjustable capacitor of 380 to 750 pF.

43 PARTICLE ACCELERATORS↗
DOE OSTI2020

Highly Emissive Semi-Ladder-Type Copolymers, Aggregation State, and Solution-Processed Organic Light-Emitting Transistor

An organic light-emitting transistor (OLET) integrates the logic function of a field-effect transistor (FET) with electroluminescence of a light-emitting diode (LED) into a single device. This has the potential to play an important role in smart displays, electrically pumped organic laser, and other flexible electronic devices. For achieving high-performance solution-processed OLET, three semiladder copolymers—TPTI-CC, TPTI-C, and TPTI-F—were developed in this study. It was found that variation in the chemical structure lead to significant differences in energy level, emission color, and intermolecular aggregation. High photoluminescence quantum yields (PLQY) was obtained in these three polymers. Solution-processed trilayered OLET devices were fabricated, which exhibited strong electroluminescence, balanced charge mobility, and external quantum efficiency (EQE) of 2.8%.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Demonstration of thermal fracture limits of gas-cooled Nd:APG-1 and Tm:YLF slabs

High-energy short-pulse laser systems demonstrated to date have been limited to low repetition rates due to significant thermal management challenges associated with scaling these systems to high average power, including the need to understand the thermal fracture limits of laser gain media. In this paper, we demonstrate the thermal fracture limits of two high-average-power gain media in a realistic diode-pumped amplifier geometry: a 5 mm thick Nd:APG-1 slab and a 2 mm thick Tm:YLF slab, both cooled by room-temperature helium gas. Finite element analysis revealed maximum tensile stress at fracture of 25 ± 3 MPa for Nd:APG-1 and 30 ± 3 MPa for Tm:YLF. These stress levels correspond to average volumetric heat loads of 13 ± 1 W/cm 3 in Nd:APG-1 and 247 ± 12 W/cm 3 in Tm:YLF. Additional simulations show geometric scaling: thinner slabs tolerate higher heat loads before fracture, while larger pump spots reach the fracture stress at lower heat loads.

Lasers↗
DOE OSTI2021

Identification of dislocation-related and point-defects in III-As layers for silicon photonics applications

Abstract The aim of this paper is to identify, analyze and compare the defects present in III-As, as a function of dislocation density, and as a function of the presence/absence of quantum dots (QDs). Such materials are of fundamental importance for the development of lasers and photodiodes for silicon photonics. The study is based on an extensive deep-level transient spectroscopy investigation, carried out on GaAs pin diodes grown on Si and on GaAs (that differ in the dislocation density), with and without embedded QDs. The original results described in this paper demonstrate that: (a) we were able to identify four different defects within the device grown on Si (three electron and one hole traps) and one defect (hole trap) in the device on GaAs, common to both samples; (b) all the majority carrier traps identified are located near midgap, i.e. are efficient non-radiative recombination centers; (c) such defects are absent (or non-detectable) in the sample grown on GaAs substrate, having a very low dislocation density; (d) the presence of QDs does not result in additional defects within the semiconductor material; (e) the analysis of the capture kinetics revealed that two of the identified traps are related to point defects, whereas the other two traps can be associated with point defects located near a dislocation; (f) a comparison with previous reports indicate that the detected traps are related to native III-As defects, or to oxygen-related complexes.

Physics↗
DOE OSTI2022

Measurements of the imploding plasma sheath in triple-nozzle gas-puff z pinches

Gas-puff z-pinch implosions are characterized by the formation of a dense annular plasma shell, the sheath, that is driven to the axis by magnetic forces and therefore subject to the magneto-Rayleigh–Taylor instability. Here, the conditions within these sheaths are measured on the 1-MA COBRA generator at Cornell University for various gas species and initial fill densities. The gas-puff loads are initialized by a 7 cm diameter triple-nozzle gas valve assembly with concentric outer and inner annular nozzles and a central gas jet. Thomson scattering and laser interferometry provide spatially resolved flow, temperature, and electron density profiles midway through the implosion, while extreme ultraviolet pinhole cameras record the evolution of the plasma column and photoconducting diodes measure x-ray emission. Analysis of the scattering spectra includes a means of discriminating between thermal and non-thermal broadening to test for the presence of hydrodynamic turbulence. Two types of sheath profiles are observed, those with sharp discontinuities at the leading edge and those with smooth gradients. In both cases, non-thermal broadening is generally peaked at the front of the sheath and exhibits a characteristic decay length that roughly scales with the sheath ion mean free path. Here, we demonstrate that this non-thermal broadening term is inconsistent with laminar velocity gradients and is more consistent with dissipative turbulence driven by unstable plasma waves in a collisionless shock. The resulting differences in sheath profile are then set by the sheath ion collisionality in a manner consistent with recent 1D kinetic simulations.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2024

System and method for high power diode based additive manufacturing

The present disclosure relates to a system for performing an Additive Manufacturing (AM) fabrication process on a powdered material, deposited as a powder bed and forming a substrate. The system makes use of a laser for generating a laser beam, and an optical subsystem. The optical subsystem is configured to receive the laser beam and to generate an optical signal comprised of electromagnetic radiation sufficient to melt or sinter the powdered material. The optical subsystem uses a digitally controlled mask configured to pattern the optical signal as needed to melt select portions of a layer of the powdered material to form a layer of a 3D part. A power supply and at least one processor are also included for generating a plurality of different power density levels selectable based on a specific material composition, absorptivity and diameter of the powder particles, and a known thickness of the powder bed. The powdered material is used to form the 3D part in a sequential layer-by-layer process.

El-Dasher, Bassem S.↗
DOE OSTI2020

Efficient Energy Funneling in Quasi‐2D Perovskites: From Light Emission to Lasing

Abstract Quasi‐2D Ruddlesden–Popper halide perovskites with a large exciton binding energy, self‐assembled quantum wells, and high quantum yield draw attention for optoelectronic device applications. Thin films of these quasi‐2D perovskites consist of a mixture of domains having different dimensionality, allowing energy funneling from lower‐dimensional nanosheets (high‐bandgap domains) to 3D nanocrystals (low‐bandgap domains). High‐quality quasi‐2D perovskite (PEA) 2 (FA) 3 Pb 4 Br 13 films are fabricated by solution engineering. Grazing‐incidence wide‐angle X‐ray scattering measurements are conducted to study the crystal orientation, and transient absorption spectroscopy measurements are conducted to study the charge‐carrier dynamics. These data show that highly oriented 2D crystal films have a faster energy transfer from the high‐bandgap domains to the low‐bandgap domains (<0.5 ps) compared to the randomly oriented films. High‐performance light‐emitting diodes can be realized with these highly oriented 2D films. Finally, amplified spontaneous emission with a low threshold 4.16 µJ cm −2 is achieved and distributed feedback lasers are also demonstrated. These results show that it is important to control the morphology of the quasi‐2D films to achieve efficient energy transfer, which is a critical requirement for light‐emitting devices.

Lei, Lei↗
DOE OSTI2021

DANTE as a primary temperature diagnostic for the NIF iron opacity campaign

The Opacity Platform on the National Ignition Facility (NIF) has been developed to measure iron opacities at varying densities and temperatures relevant to the solar interior and to verify recent experimental results obtained at the Sandia Z-machine, that diverge from theory. The first set of NIF experiments collected iron opacity data at ∼150 eV to 160 eV and an electron density of ∼7 × 1021 cm−3, with a goal to study temperatures up to ∼210 eV, with electron densities of up to ∼3 × 1022 cm−3. Among several techniques used to infer the temperature of the heated Fe sample, the absolutely calibrated DANTE-2 filtered diode array routinely provides measurements of the hohlraum conditions near the sample. However, the DANTE-2 temperatures are consistently low compared to pre-shot LASNEX simulations for a range of laser drive energies. We have re-evaluated the estimated uncertainty in the reported DANTE-2 temperatures and also the error generated by varying channel participation in the data analysis. An uncertainty of ±5% or better can be achieved with appropriate spectral coverage, channel participation, and metrology of the viewing slot.

Opachich, Y. P. (ORCID:0000000314323989)↗