Search NASA⌕ Search

SEARCH · Search NASA

Results for “magnetron sputtering”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 217 records · Page 12

Mid-wave to near-IR optoelectronic properties and epsilon-near-zero behavior in indium-doped cadmium oxide

Indium-doped cadmium oxide (In:CdO) thin films exhibit tunable epsilon-near-zero (ENZ) modal frequencies across a wide spectral range, bridging the mid-wave and near-infrared (IR). In:CdO thin films are prepared by reactive cosputtering from metallic Cd and In targets using high-power impulse magnetron sputtering (HiPIMS) and radio frequency sputtering, respectively. Using this approach, CdO thin films with carrier concentrations ranging from 2.3 × 10 19 to 4.0 × 10 20 cm –3 and mobilities ranging from 300 to 400 cm 2 /Vs are readily achieved. UV-VIS absorption spectra are used to measure optical bandgap, revealing a Burstein-Moss shift of 0.58 eV across the doping range investigated. In this work, optical measurements demonstrate the tunability of near-perfect plasmonic ENZ absorption across the mid-wave and into the near-IR spectral ranges by controlling the carrier concentration through doping, while tuning the film thickness for impedance matching. In comparison to other dopants that can be introduced to HiPIMS-deposited CdO, In offers the largest range of carrier concentrations while maintaining high mobility, thus allowing for the widest accessibility of the IR spectrum of a single plasmonic material grown by sputtering.

36 MATERIALS SCIENCE↗

Ferroelectricity in boron-substituted aluminum nitride thin films

This manuscript demonstrates ferroelectricity in B-substituted AlN thin films and a complementary set of first-principles calculations to understand their structure-property relationships. Al 1–x B x N films are grown by dual-cathode reactive magnetron sputtering on (110)W/(001)Al 2 O 3 substrates at 300°C at compositions spanning x = 0 to x = 0.20. X-ray diffraction studies indicate a decrease in both the c and a lattice parameters with increasing B concentration, resulting in a decrease in unit cell volume and a constant c/a axial ratio of 1.60 over this composition range. Films with 0.02 ≤ x ≤ 0.15 display ferroelectric switching with remanent polarizations exceeding 125 μCcm –2 while maintaining band gap energies of > 5.2eV. The large band gap allows low frequency hysteresis measurement (200 Hz) with modest leakage contributions. At B concentrations of x > 0.15, c-axis orientation deteriorates and ferroelectric behavior is degraded. Furthermore, density-functional theory calculations corroborate the structural observations and provide predictions for the wurtzite u parameter, polarization reversal magnitudes, and composition-dependent coercive fields.

36 MATERIALS SCIENCE↗

Stress-induced structural changes in superconducting Nb thin films

Here we report on the analysis of stress-induced structural changes and the formation of an omega (ω) phase in polycrystalline Nb thin films deposited on Si by high-power impulse magnetron sputtering (HiPIMS) for superconducting qubits using x-ray diffraction (XRD), transmission electron microscopy (TEM), and density-functional theory (DFT). XRD analysis indicates that internal stresses in the Nb thin films lead to the formation of {112}$\langle$111$\rangle$ deformation twins and TEM analysis shows that ω phases nucleate at some of the twin boundaries in the Nb thin films. The size of ω phases ranges from 10 to 100 nm, which is comparable to the coherence length of Nb (≈40 nm), and ≈1% volume fraction of Nb grains exhibit this ω phase. The details of the formation mechanism and superconducting properties of the ω phases are investigated by DFT and potential roles of the ω phase in Nb as a source of decoherence in superconducting qubits are also discussed.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Magnetostriction and temperature dependent Gilbert damping in boron doped Fe 80 ⁢Ga 20 thin films

Magnetic thin films with strong magnetoelastic coupling and low Gilbert damping are key materials for many magnetoelectric devices. Here, we investigated the effects of boron doping concentration on magnetostriction and temperature dependent Gilbert damping in magnetron sputtered (Fe 80 ⁢Ga 20 ) 1−𝑥 ⁢B 𝑥 films. A crystalline to amorphous structural transition was observed for a boron content near 8% and coincided with a decrease in coercivity from 76 Oe to 3 Oe. A 10% doping concentration is optimal for achieving both large magnetostriction of 48.8 ppm and low Gilbert damping of 6×10 −3 . The temperature dependence of the damping shows an increase at low temperatures with a peak around 40 K, and we associate the relative increase Δ⁢𝛼/𝛼 RT with magnetoelastic contributions to the damping, which has a maximum of 55.7% at 8% boron. An increase in the inhomogeneous linewidth broadening was observed in the structural transition regime at about 8% boron concentration. Furthermore, this study suggests that incorporation of glass forming elements, in this case boron, into Fe 80 ⁢Ga 20 is a practical pathway for simultaneously achieving enhanced magnetoelastic coupling and reduced Gilbert damping.

Cryogenics↗

SnO2 Buffer Layers for High Efficiency CdSeTe/CdTe Devices

SnO2 buffer layers of different thickness were deposited onto TEC 15 Fluorine doped tin oxide coated glass substrates using rf magnetron sputtering. The buffer layers were then incorporated into Cu-doped CdSeTe/CdTe devices using a range of CdCl 2 activation treatments and CuCl2 annealing temperatures to determine the effects of buffer layer thickness on device performance. Results show that all devices fabricated with thinner buffer layers resulted in much better J - V characteristics than their thicker counterparts. This was mainly due to a reduced open-circuit voltage (Voc) when using thicker buffer layers. The best device produced a conversion efficiency of 16.59%, fill factor of 71.62%, Jsc of 28.44 mA/cm 2 and Voc of 814.23 mV.

buffer layers↗

Microwave Vortex Motion Characterization of Nb$_{3}$ Sn Coatings for Applications in High Magnetic Fields

In this work, microwave measurements carried out in dielectric-loaded resonators exposed to high magnetic fields are exploited to yield the surface impedance of Nb$_3$ Sn superconducting coatings deposited via two different techniques: vapor tin diffusion, and DC magnetron sputtering. The obtained data lead to qualitative interpretations on both the Nb$_3$ Sn superconducting properties, and vortex-dynamics and pinning, of each coating separately, as well as simple distinctive features when comparing those. When examining the respective surface impedances at varying field, it is expected that the studied films perform at substantially diverse magnitudes of flux-flow resistivity, but also in well-differentiated pinning regimes, yet the obtained surface resistances of both samples are comparable, thus demonstrating that there is room for film optimization at the expense of certain compromise between the parameters involved.

Nb3Sn↗

Functionalized carbon nanotubes for thermionic emission and cooling applications

Barium strontium oxide-coated carbon nanotubes (CNTs) were implemented as a work function lowering and field enhancing functional coating on a coiled tungsten filament to create a new thermionic cathode. This cathode resembles conventional oxide cathodes in structure. It has the same coiled tungsten filament as a conventional oxide cathode but uses barium strontium oxide-coated CNTs instead of the traditional barium strontium calcium oxide powder mixture as an emissive coating. The cathode produces a strong thermionic emission. At 1395 K and 2.5 V/μm, the thermionic emission current of 0.87 A or current density of 2.9 A/cm 2 was obtained from this oxide-coated CNT cathode. This level of emission is about three times as large as a conventional oxide cathode operating at similar temperature and field strength. Strong thermionic emissions from the cathode also lead to a large thermionic cooling effect. Temperature reduction as large as 90° was observed from the cathode surface when it was emitting electrons. Strong thermionic emission and a large cooling effect obtained are the result of the combination of the low work function of barium strontium oxide (1.6 eV) and the large field effect induced by the CNTs. Plasma enhanced chemical vapor deposition was used to grow CNTs, and magnetron sputtering deposition was used to deposit the barium strontium oxide functional coating; details of the cathode fabrication are presented to illustrate both the versatility of the processing techniques and the adaptability of barium strontium oxide-coated CNTs as a functional coating. Finally, measurements on thermionic emission and thermionic cooling of the cathode are also presented.

36 MATERIALS SCIENCE↗

Effects of processing parameters on the morphologies of complex sesquioxide thin films

Controlling and predicting the morphology of lanthanide sesquioxides in thin film form is vital to their use in current applications. In the present study, single and codeposited Sm2O3, Er2O3, and Lu2O3 thin films were grown on yttria-stabilized zirconia (8%) substrates by radio frequency magnetron sputtering at room temperature and 500 °C. The effect of two different substrate temperatures and altering the oxide cation on the structural and morphological properties of the films was analyzed. The thin films were characterized by profilometry, scanning electron microscopy, transmission electron microscopy, and x-ray diffraction. The single-component Lu2O3 and Sm2O3 films obtained were of the cubic phase, and the Er2O3 was a mix of cubic and monoclinic phases. It was observed for both the Er2O3 and Lu2O3 films that increasing the substrate temperature to 500 °C resulted in larger grained polycrystalline films. In contrast, large grained polycrystalline films were obtained at both room temperature and 500 °C for Sm2O3 and uneven granularity increased as temperature increased. Codeposition of Lu2O3 and Sm2O3, and Lu2O3 and Er2O3 resulted in a cubic bixbyite phase (the C phase of the lanthanide sesquioxide) solid solution. It was observed that the structure and morphology of the films can be controlled by manipulating deposition parameters. Both substrate temperature and altering the oxide cation contributed to changes in crystallinity and grain structure, which can modify the chemical and physical properties of the films for their applications.

36 MATERIALS SCIENCE↗

Phase composition of polycrystalline HfNx (0.45 ≤ x ≤ 1.60) and effects of low-energy ion irradiation on microstructure, texture, and physical properties

We have investigated the phase composition of HfNx as a function of x and the effects of low-energy ion irradiation on the microstructure and physical properties of polycrystalline layers grown on SiO2 at 350 °C by ultrahigh vacuum reactive dc magnetron sputtering of Hf in mixed N2/Ar discharges. X-ray diffraction and Rutherford backscattering spectrometry results show that the phases obtained in polycrystalline HfNx layers with increasing x are hcp-structure α-Hf:N (x ≲ 0.6); multiphase mixtures consisting of α-Hf, NaCl-structure δ-HfN, rhombohedral ɛ-Hf3N2, and/or ζ-Hf4N3 (0.6 ≲ x ≲ 0.9); δ-HfN single phase (0.9 ≲ x ≲ 1.3); and mixtures of δ-HfN and higher nitrides (x ≳ 1.3). HfNx layers with 0.9 ≲ x ≲ 1.2 grown under mild ion irradiation (incident ion energy Ei ≃ 7 eV and ion-to-Hf flux ratios Ji/JHf = 1−3) are underdense with mixed orientation, low in-plane stress, and rough surface morphology due to limited adatom mobilities resulting in kinetic roughening and atomic shadowing during film growth. However, the use of intense ion irradiation (Ei = 25 eV and Ji/JHf = 4−20) results in HfNx layers, which are fully dense with strongly 111-oriented texture, compressive in-plane stress, and smooth surfaces due to ion irradiation enhanced adatom surface mobilities. In addition, the latter films have lower resistivity and higher hardness. For stoichiometric δ-HfN layers, ρ decreases from 69.7 to 35.2 μΩ cm and H increases from 22.1 to 27.4 GPa, with increasing ion-irradiation intensity. However, for HfNx layers with 1.2 ≲ x ≲ 1.6, the correspondingly higher steady state atomic N surface coverages during deposition alter growth kinetics in favor of 001 texture with a fully dense structure and compressive in-plane stress.

Materials Science↗

Synthesis and electrical transport properties of superconducting platinum silicide thin films and devices

Here, we evaluate the material characteristics of superconducting platinum silicide (PtSi) thin films as candidate materials for superconducting quantum information devices compatible with silicon technology. These films were synthesized using magnetron sputtering under ultrahigh vacuum conditions, followed by rapid thermal annealing. Polycrystalline PtSi films synthesized by this method have the favorable properties of superconducting critical temperature of 0.95 K and relatively long zero-temperature Ginzburg-Landau coherence length of 76 nm. We further studied coplanar microbridge devices fabricated by electron beam lithography and chlorine-free reactive ion etching, finding that the temperature-dependent critical current density follows the Ginzburg Landau depairing mechanism.

36 MATERIALS SCIENCE↗

Synthesis and characterization of electron beam irradiation-induced damage in polycrystalline metal thin films

High-energy physics research, industrial sterilizing, and material processing depend extensively on electron beam accelerators. Exit windows are crucial components of such electron accelerator systems, maintaining vacuum integrity inside the machine while providing mechanical strength, thermal stability, and radiation resistance at the beam-target interface. In this study, thin metallic films of Ni, Ti, Cr, and V were explored for use in electron beam exit windows, and their properties were compared with the properties of their bulk counterparts. Simulation results of metal foils predicted Ti to exhibit less beam power dissipation compared to Ni. However, Ni possesses superior mechanical and structural properties compared to Ti. The performance of these films under electron beam irradiation was examined by depositing thin layers of these films on silicon and metallic substrates using magnetron sputtering and exposing them to e-beam irradiation in a controlled setup. The deposited films were subjected to a dose of approximately 66 kGy at a beam energy of 10 MeV and characterized prior to and postexposure to the beam using field emission scanning electron microscopy, atomic force microscopy, x-ray diffraction (XRD), and nanoindentation. Particular emphasis was given to characteristics like the grain structure, surface morphology, dislocation density, and hardness. XRD patterns revealed irradiation-induced changes in peak intensities, while the crystallinity remained largely unchanged. Nanoindentation results showed that the pristine and irradiated Ti and Ni films were twice as hard when compared to bulk Ti and Ni samples, regardless of the substrate type used (Si or bulk Ti, or Ni). These results emphasize the superior mechanical properties of thin metal films compared to their bulk counterparts. In conclusion, this study advances the optimization of thin film materials for robust and efficient e-beam applications, ensuring improved durability and operational reliability.

AFM↗

Iridium thin-film coatings for the BabyIAXO hybrid X-ray optic

Reflective coatings are an essential feature of X-ray telescopes. Their overall performance relies heavily on substrate compatibility and how well they conform to the optics assembly processes. We use X-ray reflectometry (XRR) to demonstrate the compatibility of shaping flat substrates coated with iridium, and show that specular and nonspecular reflectance before and after shaping is on par with traditional hot-slumped coated substrates. From 1.487 and 8.048 k e V measurements, we find that the substrates have rms roughness of 0.38 n m and magnetron sputtered iridium deposits with rms surface roughness of 0.27 − <#comment/> 0.35 n m . A hydrocarbon overlayer from atmospheric contamination is present with a thickness of 1.4 – 1.6 n m and a density of 1.2 − <#comment/> 1.6 g / c m 3 . Both the traditional hot slumped and the flat substrates undergoing post-coating shaping have a similar characteristic surface morphology and are equally well-suited for use with X-ray optics. Finally, we demonstrate by simulation the improved effective area achieved by using a low-Z overlayer, and illustrate the performance of a hybrid optic coated with optimized bilayers for a Primakoff axion spectrum emitted by the sun.

Henriksen, Peter L. (ORCID:0000000259031878)↗

High laser fluence ITO coatings utilizing a Fabry-Perot thin film filter to reduce effective absorption

Laser-induced damage threshold of transparent conductors, such as Indium Tin Oxide (ITO), is limited by their high optical absorption due to free carriers. However, the effective absorption of a transparent conductor thin film can be reduced by an order of magnitude, without changing the electrical characteristics of the film, when placed in a low electric field section of a multilayer coating. A Fabry-Perot thin film interference filter has both high transmittance and low electric field positions, so it is an ideal thin film structure for this application. Although Fabry-Perot interference filters are not known as particularly high laser-induced damage resistant coatings due to their resonant characteristics, a laser-induced damage threshold (LIDT) improvement of up to 8× was observed with this technique compared to single layer ITO coatings fabricated using either radio frequency magnetron sputtering or electron-beam deposition. Additionally, an approximately 4× LIDT improvement for a Fabry-Perot interference filter has been observed by the addition of ITO into the multilayer structure.

47 OTHER INSTRUMENTATION↗

Achieving strong and stable nanocrystalline Al alloys through compositional design

Abstract Al alloys often suffer from low mechanical strength and lack high-temperature microstructural and mechanical robustness. A series of binary and ternary nanocrystalline (NC) Al transition metal alloys with supersaturated solid solution and columnar nanograins have been recently developed by using magnetron sputtering, manifesting a new realm of mechanical properties and thermal stability. Distinct solutes cause evident differences in the phase transformations and efficiencies for grain refinement and crystalline-to-amorphous transition. Certain sputtered Al-TM alloys have shown room-temperature mechanical strengths greater than 2 GPa and outstanding thermal stability up to 400 °C. In addition, the NC Al alloys show mechanical anisotropy and tension–compression asymmetry, revealed by micromechanical tests. Through the process encapsulating various compositionally distinct systems, we attempt to illuminate the solute effects on grain refinement and properties and more importantly, tentatively unravel the design criteria for high-strength and yet thermally stable NC Al alloys. Graphic Abstract

36 MATERIALS SCIENCE↗

Deposition and dielectric characterization of highly oriented V 2 O 5 thin films

The possibility of ferroelectricity in orthorhombic V 2 O 5 thin flms was investigated. Films were deposited via either a chemical solution deposition (CSD) route or by RF magnetron sputtering. Highly (001) oriented V 2 O 5 flms were achieved with both deposition routes at temperatures as low as 300°C. No evidence for ferroelectricity was observed, even in flms which had been doped to provide local nuclei for polarization reversal. Loss originated from mid-gap trap states stemming from oxygen vacancies that were observed with photoluminescence, supplemented by piezoresponse force microscopy measurements. Furthermore, these trap states may have helped mimic ferroelectricity in previous reports on V 2 O 5 .

36 MATERIALS SCIENCE↗

System Integration of Rationally Designed Dilute Alloy Catalysts for Energy-Efficient Electrochemical CO 2 -To-Fuel Conversion

Energy effiecient electrochemical conversion of CO 2 to high-demand chemicals and transportation fuels using renewable solar and wind energy is a key technology needed for a high-productivity, low-carbon future. However, the development of scalable, low-cost, active, selective, and stable electrocatalysts remains a key challenge that needs to be overcome to enable high-volume conversion of CO 2 to feedstock chemicals for the chemical industry. In previous work, Lawrence Livermore National Laboratory (LLNL) has developed a rational design platform for dilute alloy transition metal electrocatalysts that promise to make electrochemical CO 2 conversion more energy efficient and selective. In this project, we worked with our industrial partners, Twelve and TotalEnergies, to improve scale up, integration, and stability of LLNL’s dilute alloy catalyst technology into an industry-relevant zero gap electrolyzer platform. Through virtual experiments and data analysis, we designed efficient and cost-effective copper-based catalysts. The catalyst was specifically designed to streamline the slowest and most energy-intensive step of the electrochemical chemical transformation of CO 2 to multi-carbon products – that is making the carbon-carbon bond by dimerization of the reaction intermediate carbon monoxide - resulting in up to 10% improvement in energy efficiency for C 2 products while simultaneously increasing the selectivity towards C 2 products. We tested two different scalable catalyst coating technologies and down-selected magnetron sputtering as the technique that provided the best control over catalyst loading, composition, and morphology. Using this technology, we successfully demonstrated integration of our dilute alloy catalysts into a 100 cm 2 electrolyzer platform with Faradaic efficiencies for ethylene production reaching 40% at a current density of 200 mA/cm 2 . We also developed the technology to integrate a well-defined nanoscale porosity by depositing alloy compositions that were compatible with dealloying, that is, selective leaching of an alloy component to generate nanoscale porosity. We observed that integration of the dealloying-derived nanoporosity improved catalyst performance and stability by leading to a more hydrophobic catalyst/anion exchange membrane interface. Unsolved problems that still need to be addressed are corrosion of the Cu catalyst -specifically if the used catalyst is exposed to air - as well as long term stability do to salt formation/deposition and flooding of the catalyst/electrolyzer flow channels, especially at higher current densities. As we only worked on optimization of catalyst composition, coating thickness, and morphology, further performance optimization will require a system level approach that includes optimization of electrolyzer design and membrane technology.

36 MATERIALS SCIENCE↗

Full Technical Report: High-Rate Carbide Growth by Evaporation

Boron carbide (B 4 C) is an attractive inertial confined fusion (ICF) ablator and a unique ultra-hard material with numerous current and potential applications. What makes B 4 C attractive as an ablator is its relatively high density and the ability to form a stable glassy phase combined with excellent chemical and mechanical stability. Despite these advantages, the fabrication of B 4 C ablators has remained a challenge. Magnetron sputtering, our current frontrunner approach for B 4 C deposition, exhibits low deposition rates (< 2 μm/h) and undesirable nodular defects within the film structure that are believed to generate from the dusty plasma around the sputtering source. The goals of this project were to (1) establish alternative plasma-free, electron beam evaporation (EBE) capabilities for the deposition of thin films that are needed in mission-critical programs and; (2) demonstrate the feasibility to deposit B 4 C films at high rates by EBE in a bottom-up geometry and characterize their stoichiometry. In this feasibility study, we initially developed the capability to convert a general-use vacuum chamber into an electron beam evaporator as needed, or on demand. Then, we successfully used this setup to deposit films made of boron carbide and various other materials. By adjusting the deposition parameters and the evaporation source material, we were able to demonstrate the feasibility of reaching deposition rates as high as 8 μm/h, which is about 4 times the maximum rates obtained through sputtering methods. We predict that these values can still be further improved by implementing enhanced thermal control measures for the target source and optimizing electron beam parameters (ie. current, sweeping and frequency) since ceramic materials with similar densities to B 4 C can exhibit deposition rates of about twice this value. We anticipate that the skills and capabilities developed throughout this project will prove relevant not only to the HED and ICF campaigns but also to numerous existing and prospective applications focused on the development of ultra-hard carbide coatings. The fresh set of tools here developed will also facilitate the preparation and research on future new target materials of interest beyond B 4 C.

36 MATERIALS SCIENCE↗

Oak Ridge National Laboratory Official TM Cover: Development and Qualification of Tungsten Reference Materials for LA-ICP-MS

Reference materials have been developed to provide areal density measurements of tungsten that is deposited on graphite when using laser ablation inductively coupled plasma mass spectrometry (LA-ICP-MS). Several reference materials of varying areal densities have been produced using a magnetron sputtering, thin film deposition technique. With multiple reference materials that have varying areal densities, a calibration curve has been developed for translating the detector response of an ICP-MS into a quantitative measurement. These results provide the opportunity to make calibrated comparisons across graphite samples that were exposed to tungsten transport experiments for nuclear fusion research. In addition, these methods may be applied to provide individual areal density measurements for the five unique isotopes of tungsten. It is found that areal density measurements via LA-ICP-MS agree with characterization for the same samples when using the more traditional Rutherford backscattering ion beam technique. Qualification of these reference materials was completed using ion beam laboratories at the University of Tennessee, Knoxville and Massachusetts Institute of Technology, and Sandia National Laboratory.

36 MATERIALS SCIENCE↗