Langley Research Center microelectronics program
Langley Research Center microelectronics program - systems, circuits and devices, and materials and components development
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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Thermochromic display materials for use under wide variations in ambient illumination levels Annual progress report
Thermochromic materials for display devices and their application as screen materials in cathode ray tube phosphors
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Three-dimensional pantograph for use in hazardous environments
Material measurement device is used with radioactive probes which can be approached only to distance of 3 feet. Tracer-following unit is capable of precisely controlled movement in X-Y-Z planes. Pantograph is usable in industrial processes involving chemical corrosives, poisons, and bacteriological hazards, as well as nuclear applications.
Cowfer, C. D.↗
Electronically tuned optical filters
A detailed account is given of efforts to develop a three layer, polychromic filter that can be tuned electronically. The operation of the filter is based on the cooperative alignment of pleochroic dye molecules by nematic liquid crystals activated by electric fields. This orientation produces changes in the optical density of the material and thus changes in the color of light transmitted through the medium. In addition, attempts to improve materials and devices which employ field induced changes of a cholesteric to a nematic liquid crystal are presented.
Castellano, J. A.↗
The effects of radiation on the outer planets grand tour
A handbook is presented which was designed to accompany an oral presentation on the effects of radiation on the outer planets grand tour (OPGT). A summary of OPGT radiation environments expected from natural sources and the radioisotope thermoelectric generators and basic radiation effects and processes are reviewed, and ionization and displacement effects are examined. The presentation summarizes the effects of radiation on miscellaneous spacecraft materials and devices. The annealing and hardening of electronics are described. Special emphasis is placed on microcircuits. Mathematical modeling of circuits affected by radiation and radiation environmental testing are discussed. A review of means of evaluating the performance and correcting failures of irradiated devices is also presented.
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Technology - Past, present and future.
Review of the role of the space program in achieving the present level of technology in the United States. The program has created new levels in performance, precision, and reliability in many areas, and has consequently stimulated many innovations. The space program has also created new devices and materials that are suitable for commercial use.
Faget, M. A.↗
High speed, high performance /Hg,Cd/Te photodiode detectors.
The current performance of high speed photodiode detectors for the 1 to 10 micron spectral region is discussed. The (Hg,Cd)Te photodiode configuration, detector properties, integration in laser receiver modules, and frequency response are considered for near infrared and far infrared wavelengths. The recent advances in (Hg,Cd)Te material and device development are indicated by the realization not only of exceptionally high speed detectors but of detectors that exhibit excellent detectivities. The performance improves substantially when the detector is cooled. This detector junction technology has been extended to other compositions of (Hg,Cd)Te for peak spectral responses at 5 and 10 micron.
Soderman, D. A.↗
Workshop proceedings: Photovoltaic conversion of solar energy for terrestrial applications. Volume 1: Working group and panel reports
Technological aspects of solar energy conversion by photovoltaic cells are considered. The advantage of the single crystal silicon solar cell approach is developed through comparisons with polycrystalline silicon, cadmium sulfide/copper sulfide thin film cells, and other materials and devices.
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Electromagnetic radiation screening of microcircuits for long life applications
The utility of X-rays as a stimulus for screening high reliability semiconductor microcircuits was studied. The theory of the interaction of X-rays with semiconductor materials and devices was considered. Experimental measurements of photovoltages, photocurrents, and effects on specified parameters were made on discrete devices and on microcircuits. The test specimens included discrete devices with certain types of identified flaws and symptoms of flaws, and microcircuits exhibiting deviant electrical behavior. With a necessarily limited sample of test specimens, no useful correlation could be found between the X-ray-induced electrical response and the known or suspected presence of flaws.
Brammer, W. G.↗
Automated Space Processing Payloads Study. Volume 1: Executive Summary
An investigation is described which examined the extent to which the experiment hardware and operational requirements can be met by automatic control and material handling devices; payload and system concepts are defined which make extensive use of automation technology. Topics covered include experiment requirements and hardware data, capabilities and characteristics of industrial automation equipment and controls, payload grouping, automated payload conceptual design, space processing payload preliminary design, automated space processing payloads for early shuttle missions, and cost and scheduling.
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Automated space processing payloads study. Volume 2, book 1: Technical report
The extent was investigated to which experiment hardware and operational requirements can be met by automatic control and material handling devices; payload and system concepts that make extensive use of automation technology are defined. Hardware requirements for each experiment were established and tabulated, and investigations of applicable existing hardware were documented. The capabilities and characteristics of industrial automation equipment, controls, and techniques are presented in the form of a summary of applicable equipment characteristics in three basic mutually-supporting formats. Facilities for performing groups of experiments are defined along with four levitation groups and three furnace groups; major hardware elements required to implement them were identified. A conceptual design definition of ten different automated processing facilities is presented along with the specific equipment to implement each facility and the design layouts of the different units. Constraints and packaging, weight, and power requirements for six payloads postulated for shuttle missions in the 1979 to 1982 time period were examined.
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Primary reflector for solar energy collection systems
A fixed, linear, ground-based primary reflector is disclosed which has an extended curved sawtooth-contoured surface covered with a metalized polymeric reflecting material. The device reflects solar energy to a movably supported collector that is kept at the concentrated line focus of the reflector primary. The primary reflector may be constructed by a process utilizing well-known freeway paving machinery.
Miller, C. G.↗
Annual Conference on Nuclear and Space Radiation Effects, 16th, Santa Cruz, Calif., July 17-20, 1979, Proceedings
Papers are presented on the following topics: radiation effects in bipolar microcircuits; basic radiation mechanisms in materials and devices; energy deposition and dosimetry; and system responses from SGEMP, IEMP, and EMP. Also considered are basic processes in SGEMP and IEMP, radiation effects in MOS microcircuits, and space radiation effects and spacecraft charging.
Bombardt, J.↗
Low-cost ion implantation and annealing technology for solar cells
Ion implantation and thermal annealing techniques for processing junctions and back surface layers in solar cells are discussed. Standard 10 keV (31)p(+) junction implants and 25 keV (11)B(+) back surface implants in combination with three-step furnace annealing are used for processing a range of silicon materials and device structures. Cells with efficiencies up to 16.5% AM1 are being produced, and large-area terrestrial cells with implanted junctions and back fields being fabricated in pilot production exhibit average efficiencies in excess of 15% AM1. Thermal annealing methods for removal of the radiation damage caused by implantation should be replaced by transient processing techniques in future production. Design studies have been completed for solar cell processing implanters to support 10 MW/yr and 100 MW/yr production lines, and analyses indicate that implantation costs can be reduced to approximately 1 cent/watt.
Kirkpatrick, A. H.↗
The Conference on High Temperature Electronics
The status of and directions for high temperature electronics research and development were evaluated. Major objectives were to (1) identify common user needs; (2) put into perspective the directions for future work; and (3) address the problem of bringing to practical fruition the results of these efforts. More than half of the presentations dealt with materials and devices, rather than circuits and systems. Conference session titles and an example of a paper presented in each session are (1) User requirements: High temperature electronics applications in space explorations; (2) Devices: Passive components for high temperature operation; (3) Circuits and systems: Process characteristics and design methods for a 300 degree QUAD or AMP; and (4) Packaging: Presently available energy supply for high temperature environment.
Hamilton, D. J.↗
Gain saturation in semiconductor lasers - Theory and experiment
The semiconductor stimulated gain saturation model of Zee has been extended using reasonable approximations to obtain an analytical solution for the gain saturation process in PbSnTe and to determine the limit to single mode power directly from the gain expression, the intraband relaxation time, and device and material parameters. The theoretical results are compared with experimental observations for single transverse mode cavity narrow stripe buried heterostructure PbSnTe lasers. Those results are interpreted in terms of an intraband relaxation time on the order of 2 x 10 to the -12th s in the temperature range 20-80 K.
Kasemset, D.↗
Silicon carbide, a high temperature semiconductor
Electronic applications are described that would benefit from the availability of high temperature semiconductor devices. Comparisons are made among potential materials for these devices and the problems of each are discussed. Recent progress in developing silicon carbide as a high temperature semiconductor is described.
Powell, J. A.↗
Tunable diode lasers for 3-30 micron infrared operation
The tunable diode laser is now widely used in high resolution infrared spectroscopy studies, taking into account laboratory and industrial applications. The present investigation is concerned with advances related to laser performance and reliability. The advances are the result of improvements in materials and device technologies. Reliability data for broad-area Pb(1-x)Sn(x)Se lasers are considered along with performance improvements in stripe-geometry lasers, laser performance at wavelengths above 25 microns, and laser performance at wavelengths below 4 microns. Attention is given to tunable Pb-salt infrared diode lasers, mesa-stripe geometry lasers of Pb(1-x)Sn(x)Se and PbS(1-x)Se(x), and long wavelength diode laser emission observed in both Pb(1-x)Sn(x)Te and Pb(1-x)Sn(x)Se.
Linden, K. J.↗