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Results for “modulation doping”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 217 records · Page 12
All sourcesNASA NTRSDOE OSTI
DOE OSTI2016

AgI alloying in SnTe boosts the thermoelectric performance via simultaneous valence band convergence and carrier concentration optimization

SnTe, a Pb-free analogue of PbTe, was earlier assumed to be a poor thermoelectric material due to excess p-type carrier concentration and large energy separation between light and heavy hole valence bands. Here, we report the enhancement of the thermoelectric performance of p-type SnTe by Ag and I co-doping. AgI (1–6 mol%) alloying in SnTe modulates its electronic structure by increasing the band gap of SnTe, which results in decrease in the energy separation between its light and heavy hole valence bands, thereby giving rise to valence band convergence. Additionally, iodine doping in the Te sublattice of SnTe decreases the excess p-type carrier concentration. Due to significant decrease in hole concentration and reduction of the energy separation between light and heavy hole valence bands, significant enhancement in Seebeck coefficient was achieved at the temperature range of 600–900 K for Sn{sub 1−x}Ag{sub x}Te{sub 1−x}I{sub x} samples. A maximum thermoelectric figure of merit, zT, of ~1.05 was achieved at 860 K in high quality crystalline ingot of p-type Sn{sub 0.95}Ag{sub 0.05}Te{sub 0.95}I{sub 0.05}. - Graphical abstract: Significant decrease in hole concentration and reduction of the energy separation between light and heavy hole valence bands resulted in a maximum thermoelectric figure of merit, zT, of ~1.05 at 860 K in high quality crystalline ingot of p-type Sn{sub 0.95}Ag{sub 0.05}Te{sub 0.95}I{sub 0.05}. - Highlights: • AgI alloying in SnTe increases the principle band gap. • Hole concentration reduction and valence band convergence enhances thermopower of SnTe-AgI. • A maximum zT of ~1.05 was achieved at 860 K in p-type Sn{sub 0.95}Ag{sub 0.05}Te{sub 0.95}I{sub 0.05}.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2017

Residual stresses in silicon and their evolution upon heat treatment and irradiation

The distributions of internal stresses in undoped and tin-doped silicon and the influence of electron irradiation with an energy of 5 MeV and of heat treatment at 450°C on the stresses are studied. The stresses are measured by a method based on the detection of birefringence by modulation polarimetry. It is shown that tin-doped silicon includes stripes of point defects with a nonuniform distribution of residual stresses of up to 20 kg cm{sup –2}. Heat treatment at 450°C induces an increase in the residual stresses in the sample to 50 kg cm{sup –2}. It is established that the radiation defects formed upon the irradiation of tin-doped silicon reduce the residual stresses to 2–3 kg cm{sup –2}.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Surface plasmon polariton excitation by electrostatic modulation and phase grating in indium-tin-oxide coated lithium niobate slabs

Excitation of surface plasmon polaritons (SPPs) in a non-metal system in visible regime is discussed. With the assistance of phase grating resulted from photorefractive effect and electrostatic modulation of ITO induced by strong photovoltaic effect in iron-doped LiNbO{sub 3}, phase matching condition could be satisfied for SPP excitation in this semiconductor/dielectric system. Both the phase grating instead of metal grating and electrostatic modulation of semiconductor could be used for the design of tunable plasmonic devices based on nonlinear photorefractive crystals.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2017

Uniform p-type doping of silicon nanowires synthesized via vapor-liquid-solid growth with silicon tetrachloride

Boron-doped silicon nanowires (SiNWs) grown by the vapor-liquid-solid growth mechanism using silicon tetrachloride (SiCl4) as the silicon precursor and trimethylboron (TMB) as the boron source were studied to understand the axial and radial doping uniformity. TMB-doped SiNWs with diameters up to 400 nm and lengths > 7.5 μm were integrated into a global back-gated test structure with multiple electrodes for electrical characterization. From gate modulated measurements, the SiNWs were confirmed to be heavily doped p-type. Multiple four point resistivity measurements across a total length of 7.5 μm were taken on as-grown SiNWs. Resistivity, corrected for surface charge, was determined to be 0.01 +/– 0.002 Ω cm along the entire length of the as-grown boron doped SiNWs. This was also observed in the axial direction for etched SiNWs, with corrected resistivity of 0.01 +/– 0.003 Ω cm, therefore confirming the uniform p-type doping of SiNWs using TMB and SiCl 4 as precursors.

42 ENGINEERING↗
DOE OSTI2026

Impact of Cation Insertion on Semiconducting Polymer Thin Films toward Electrochemical Energy Conversion

Semiconducting polymers are being explored for electrochemical and photoelectrochemical energy transformation and storage applications. For these applications, it is critical to understand how ion insertion from the electrolyte into polymer electrodes modulates the polymer electronic structure and electron doping levels. Here, this study explores electrochemical cation insertion in the n-type conjugated redox polymer P90, composed of alternating naphthalene diimide (NDI) acceptor and bithiophene (T2) donor units, where the NDI units are functionalized with heptaethylene glycol (HEG, 90%) and 2-octyl dodecyl (OD, 10%) side chains. By combining in situ techniques (UV-vis absorption and Raman spectroscopies with electrochemistry), structural analysis using ex situ grazing-incidence wide-angle X-ray scattering (GIWAXS), and density functional theory (DFT) calculations, we reveal that dications enable negative polaron and bipolaron formation in the P90 at less reducing potentials while supporting more bipolaron formation than the monocations; moreover, larger dications with smaller hydrated radii increase the maximum P90 electron doping level. We also determine that the monocations lead to more thermodynamically stabilized polarons compared with the dications. These findings highlight the critical role of cation identity in tuning electrochemical charging, charge stabilization, and electronic structure of n-type conjugated redox polymers, providing guidance on the rational design of polymer-based (photo)electrochemical applications.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2026

Mechanistic insight into the effects of A-site doping in perovskite nanorods on interfacial Li-ion and Na-ion transport in polymer–perovskite composite electrolytes

Composite polymer electrolytes (CPEs) offer a promising pathway to safer and higher energy density electrochemical energy storage yet optimizing interfacial ion transport remains a critical challenge due to high resistances and a lack of understanding of the complex interfacial electrostatic interactions. This work investigates the mechanistic origins of the interfacial ion transport enhancement in single-ion conducting (SIC) polymer electrolytes filled with A-site disordered perovskite LaxMyTiOz (LMTO) (M = Li, Na, K) nanorods. By integrating Density Functional Theory (DFT) with broadband dielectric spectroscopy (BDS) and pulsed-field-gradient NMR (PFG-NMR), we analyze the ion transport behavior in Li-based and Na-based SIC systems containing compositionally distinct LMTO fillers (LMTO800 and LMTO900). Specifically, we introduce the site-to-site energy difference (ΔE) descriptor, which extends beyond single-site descriptors such as adsorption energy and ion binding energies. We demonstrate that ΔE together with ion binding energies provide a more comprehensive picture of the energy landscape at the polymer–ceramic interface. The combined DFT and experimental results show that A-site doping in the ceramic filler can effectively modulate ΔE and ion binding energies, creating a favorable potential energy landscape that promotes enhanced ion transport along the interface. This comprehensive study illustrates the impact of ceramic compositional tuning on interfacial ion transport and provides materials design rules towards real-world applications.

B shepard, Lauren [Pennsylvania State University]↗
DOE OSTI2022

Superconducting dome in ferroelectric-type materials from soft mode instability

Here we present a minimal theory of superconductivity enhancement in ferroelectric-type materials. Simple expressions for the optical mode responsible for the soft mode transition are assumed. A key role is played by the anharmonic phonon damping which is modulated by an external control parameter (electron doping or mechanical strain) causing the appearance of the soft mode. It is shown that the enhancement in the superconducting critical temperature T c upon approaching the ferroelectric transition from either side is due to the Stokes electron-phonon scattering processes promoted by strong phonon damping effects.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Microwave-induced zero-resistance state in two-dimensional electron systems with unidirectional periodic modulation

In this study we fabricated lateral superlattices (LSLs) based on the selectively doped GaAs/AlAs heterostructures with a high-mobility two-dimensional (2D) electron gas. The LSLs were formed using the electron-beam lithography and lift-off techniques, which produced a set of metallic strips on top of a heterojunction. The amplitude of the 2D electron gas modulation in the LSL was controlled by the gate voltage applied to the metallic strips. The LSLs with two different periods (a = 200 nm and 500 nm) were used to investigate the influence of microwave radiation with the frequency of 110–150 GHz on the 2D electron transport at the temperature T = 1.6 K in the magnetic field B < 1 T. We have found that zero-resistance states (ZRSs) appear under the microwave radiation in the 2D systems with a unidirectional periodic modulation. These ZRSs are located at the minima of commensurability oscillations.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Dynamic characteristics of undoped and p-doped Fabry-Perot InAs/InP quantum dash based ridge waveguide lasers for access/metro networks

In this paper, we report the characteristics of InAs/InP quantum dashes (QDash) based lasers emitting around 1.55 μm. An unprecedented high modal gain of ∼100 cm{sup −1} is obtained for an optimized active structure by stacking 12 QDash layers. Directly modulated lasers allowed achieving a modulation bandwidth of ∼10 GHz and a Henry factor around 5. Thanks to p-type doping, the Henry factor value is reduced down to 2.7 while the modulation bandwidth still amounts to ∼10 GHz. This shows that doping of the active region is important to improve the dynamic characteristics of QDash lasers.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Robust charge-density-wave correlations in the electron-doped single-band Hubbard model

There is growing evidence that the hole-doped single-band Hubbard and t–J models do not have a superconducting ground state reflective of the high-temperature cuprate superconductors but instead have striped spin- and charge-ordered ground states. Nevertheless, it is proposed that these models may still provide an effective low-energy model for electron-doped materials. Here we study the finite temperature spin and charge correlations in the electron-doped Hubbard model using quantum Monte Carlo dynamical cluster approximation calculations and contrast their behavior with those found on the hole-doped side of the phase diagram. We find evidence for a charge modulation with both checkerboard and unidirectional components decoupled from any spin-density modulations. These correlations are inconsistent with a weak-coupling description based on Fermi surface nesting, and their doping dependence agrees qualitatively with resonant inelastic x-ray scattering measurements. Our results provide evidence that the single-band Hubbard model describes the electron-doped cuprates.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Low Power Thermal Tuning in Resonant Vertical Junction Silicon Modulators Through Substrate Removal

We report on thermally tunable modulators, with efficiencies up to 2.16 nm/mW. Efficient performance was accomplished through integrated heater design and Si substrate removal, where the heavily N+ doped Si heater element is integrated into the body of the microdisk. For comparison, modulators with an external heater design were also tested with small diameter Si substrate removed. The external heavily doped N+Si heater bars were fabricated outside the diameter of the microdisk. Efficiency for external heater design was 0.68 nm/mW with substrate removed. Both types of thermal modulators were experimentally tested and simulated for a complete understanding of the Si substrate's influence on heat dissipation with both types benefiting significantly from substrate removal. Agreement between simulation and experimental results was greater than 80% in all instances.

42 ENGINEERING↗
DOE OSTI2024

Guided Mode Evolution and Ionization Injection in Meter-Scale Multi-GeV Laser Wakefield Accelerators

Here, we show that multi-GeV laser wakefield electron accelerators in meter-scale, low density hydrodynamic plasma waveguides operate in a new nonlinear propagation regime dominated by sustained beating of lowest order modes of the ponderomotively modified channel; this occurs whether or not the injected pulse is linearly matched to the guide. For a continuously doped gas jet, this emergent mode beating effect leads to axially modulated enhancement of ionization injection and a multi-GeV energy spectrum of multiple quasimonoenergetic peaks; the same process in a locally doped jet produces single multi-GeV peaks with <10% energy spread. A three-stage model of drive laser pulse evolution and ionization injection characterizes the beating effect and explains our experimental results.

43 PARTICLE ACCELERATORS↗
DOE OSTI2015

Capacitance behavior of InAlN Schottky diodes in presence of large concentrations of shallow and deep states related to oxygen

The capacitance-voltage-temperature characteristics of nonintentionally doped In{sub 0.16}Al{sub 0.84 }N/n{sup +}-GaN Schottky diodes were measured at 1 MHz and in the 90–400 K range. They are discussed in the framework of existing theories, which properly treat the Poisson's equation, especially near the edge of the space-charge region, the so-called transition region. The concentration of a shallow donor and of a deep DX-like center, previously reported, is properly determined. The key parameter to discuss the temperature dependence of the capacitance is the ratio between the frequency of the small ac modulating signal and the temperature-dependent emission rate associated to each level. The capacitance-voltage C-V{sub a} curves were successfully fitted using a three parameters expression over the full range of temperatures. The concentration of both shallow and deep levels exceeds a few 10{sup 18} cm{sup −3}. Based on secondary ion mass spectrometry profiling, we assign both levels to the dominant oxygen impurity. This result supports our previous assignment of the shallow donor to a substitutional oxygen atom on a nitrogen site and the deep state to an O-related DX center, naturally explaining its high concentration. The sluggish kinetics at low temperatures, associated to the large concentration of deep levels located near the transition region, is illustrated by hysteresis loops in the C-V{sub a} curves below 270 K. Furthermore, the contribution of free carriers to the capacitance is revealed below 150 K, when both shallow and deep donors cannot respond anymore due to an emission rate lower than the 1 MHz modulating frequency. Finally, the presence of a highly doped thin surface barrier, as already reported in other III-nitrides, finds further support.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Influence of the Bulk Resistivity on Silicon Heterojunction Solar Cells and Module Reliability

Recent developments in industry on surface passivation open the possibility of using less doped substrates in silicon solar cells. In this report we investigate how the bulk resistivity affects the performance of silicon cells and the reliability of modules. Herein, n- and p-type silicon heterojunction cells with bulk resistivities between 3 and 15 000 Ωcm are studied. We measure the current–voltage characteristics of n-type cells across the resistivity range, and we find comparable responses to illumination intensities between 0.1 and 1 suns. The cells with bulk resistivities over 1000 Ωcm show breakdown voltages larger than -1000 V, almost two orders of magnitude higher than in typical commercial cells. Although modules have bypass-diodes to prevent cells from going into breakdown, higher breakdown voltages can improve the reliability of modules in case of bypass-diode failure and reduce the module cost by easing the number of bypass-diodes required. Finally, the cells have been submitted to light soaking. The float-zone p-type cells with bulk resistivities over 10 000 Ωcm are less sensitive to light-induced degradation than cells with bulk resistivities below 10 Ωcm. The former show to recover few hours after light soaking, while the latter recover only after dark annealing.

14 SOLAR ENERGY↗
DOE OSTI2019

A prototype for SANDD: A highly-segmented pulse-shape-sensitive plastic scintillator detector incorporating silicon photomultiplier arrays

We report the first clear observation of neutron/gamma-ray pulse-shape sensitivity of a fully-instrumented 8 × 8 array of plastic scintillator segments coupled to two 5 cm × 5 cm 64-channel SiPM arrays as part of a study of the key metrics of a prototype antineutrino detector module designed for directional sensitivity. SANDD (a Segmented AntiNeutrino Directional Detector) will eventually comprise a central module of 64 elongated segments of 6 Li-doped pulse-shape-sensitive scintillator rods, each with a square cross section of 5.4 mm × 5.4 mm, surrounded by larger cross section bars of the same material. The most important metrics with the potential to impact the performance of the central module of SANDD are neutron and gammaray pulse-shape sensitivity using silicon photomultipliers (SiPMs), particle identification via scintillator rod multiplicity, and energy and position resolution. As a first step, we constructed a prototype detector to investigate the performance of a central SANDD-like module using two 64-channel SiPM arrays and rods of undoped pulse-shape-sensitive plastic scintillator.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2019

Modelling an electro-optical modulator based on a vertical p – n junction in a silicon-on-insulator structure

We report the results of numerical simulation of a Mach – Zehnder electro-optical modulator using beam splitters based on multimode interference in a silicon-on-insulator structure. The control is provided due to the depletion effect in the vertical p – n junction, which can be fabricated using the self-alignment technology. An optimal modulator design is proposed, which impedance is matched with an external 50-Ω load, for which, with a reverse bias of – 5 V and an active length of 1.7 mm, the optical frequency bandwidth of ∼ 50 GHz can be achieved. A special doping profile of the p – n junction of the modulator is presented, which provides an optical frequency bandwidth of 30 GHz with a reverse bias of –3 V and a modulator length of 2.5 mm. Such modulators can be used in integrated optics, optical communications and radio photonics devices. (paper)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗