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At least 217 records · Page 12

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NASA NTRS1976

Epitaxial silicon solar cells

P+/p/n/n+ epitaxial silicon solar-cell structures were fabricated with the n-base region intentionally graded over 2 orders of magnitude in a thickness of 35 microns. Solar cells made from these layers exhibited near-ideal I-V characteristics in the practical operating range, with an open-circuit voltage of 636 mV, fill factor of 0.79, and AM1 efficiency of 12.6%. A similar epitaxial structure containing no gradient in the n-base showed good solar-cell performance but lower open-circuit voltage (603 mV).

Daiello, R. V.↗

DOE OSTI2022

Evidence of Morphological Change in Sulfur Cathodes upon Irradiation by Synchrotron X-rays

While the development of lithium–sulfur battery cathodes has benefited substantially from the use of in situ and ex situ X-ray absorption studies, the degree of undesired influence from synchrotron radiation has not been studied. In this study, we present evidence of severe beam damage on sulfur cathodes under irradiation by synchrotron X-rays. Specifically, X-ray fluorescence mapping with relatively low dosage was conducted to observe the morphological changes after conducting X-ray absorption spectroscopy (XAS). Under open-circuit conditions, the morphology of the sulfur spontaneously changes and tends to migrate out of the region of XAS sampling. Our work indicates that effort should be placed in first obtaining a no-change/stable open-circuit baseline when attempting to conduct in operando studies of lithium–sulfur batteries using synchrotron radiation with an energy of <7.7 keV and a flux of >6 × 10 12 photons s –1 .

25 ENERGY STORAGE↗

DOE OSTI2025

Top-Performing Photovoltaic Cells Compared to the Shockley–Queisser Limit

Top-performing single-junction and two-terminal tandem devices that include at least one polycrystalline cell are compared with each other and their ideal limits. The parameters of open-circuit voltage, short-circuit current, and fill-factor are individually compared to the Shockley–Queisser limit to investigate where different technologies have room to improve. Technologies, such as silicon and cadmium telluride have the most room for improvement in open-circuit voltage currently utilizing 87% and 81% of their maxima, respectively. Detailed diode and fill-factor loss analysis is presented for single-junction devices to give further insight on how they compare and where efficiency is lost. Single-crystal technologies demonstrate a fill-factor closer to the Shockley–Queisser limit than polycrystalline devices. The high diode quality factor of polycrystalline devices is the leading cause of the decreased fill-factor. Similar analysis on tandem cells with at least one thin-film cell shows that although their efficiency exceeds that of the single-junction cells, the fraction of their ideal efficiency is smaller. Here, by comparing parameters to the Shockley–Queisser limit, it becomes clearer where certain technologies have the potential for improvement.

High efficiency↗

NASA NTRS1973

Performance of epitaxial back surface field cells

Epitaxial back surface field structures were formed by depositing a 10 micron thick 10 Omega-cm epitaxial silicon layer onto substrates with resistivities of 0.01, 0.1, 1.0 and 10 Omega-cm. A correlation between cell open-circuit voltage and substrate resistivity was observed and was compared to theory. The cells were also irradiated with 1 MeV electrons to a fluence of 5 X 10 to the 15th power e/cm2. The decrease of cell open-circuit voltage was in excellent agreement with theoretical predictions and the measured short circuit currents were within 2% of the prediction. Calculations are presented of optimum cell performance as functions of epitaxial layer thickness, radiation fluence and substrate diffusion length.

Brandhorst, H. W., Jr.↗

DOE OSTI2021

Fabrication of Poly-Si on Locally Etched SiOx as Passivating Contacts for c-Si Solar Cells

Polysilicon on silicon oxide (poly-Si/SiO x ) passivating contacts with predominant charge-carrier transport via pinholes were prepared with room temperature metal-assisted chemical etching. Pinhole areal densities in the range of 2.8 x 10^4 to 4.5 x 10^7 cm^-2 were imaged by SEM. Contact resistivity of 32 m-ohm-cm^2 and implied open circuit voltage of 729 mV were obtained for symmetric n+ poly-Si/SiOx grown onto randomly textured n-Cz. We also show preliminary data pertaining boron-doped polysilicon on nitride/oxide passivating contacts, with which we achieved implied open circuit voltage above 730 mV and recombination current of 0.2 fA/cm^2.

amorphous Si↗

NASA NTRS1974

Performance of epitaxial back surface field cells

Epitaxial back surface field structures were formed by depositing a 10 micron thick 10 ohm-cm epitaxial silicon layer onto substrates with resistivities of 0.01, 0.1, 1.0 and 10 ohm-cm. A correlation between cell open-circuit voltage and substrate resistivity was observed and was compared to theory. The cells were also irradiated with 1-MeV electrons to a fluence of 5 times 10 to the 15th electrons per sq cm. The decrease of cell open-circuit voltage was in excellent agreement with theoretical predictions and the measured short-circuit currents were within 2% of the prediction. Calculations are presented for optimum cell performance as functions of epitaxial layer thickness, radiation fluence, and substrate diffusion length.

Brandhorst, H. W., Jr.↗

NASA NTRS1979

Phase Two of the Array Automated Assembly Task for the Low Cost Solar Array Project

Various top contact metal systems were studied. Only Ti Pd Cu approaches baseline (Ti Pd Ag) quality, but this system shows a lack of long term stability. Aluminum back surface field structures were fabricated and thicknesses of p superscript + material of up to 7.0 microns were achieved with open circuit voltages of 0.59V. A general purpose ultrasonic welder was purchased and tests using various metal foils are under way. During fabrication of the demonstration module, several cells became cracked. Due to redundancy of interconnections, the module was not open circuited but the efficiency was reduced to 8.8%. The broken cell was interconnected with a strap across the back and the efficiency was increased to 11.5%. A cost analysis was made and the results indicate a selling price of $0.56/watt peak (in 1986 with 1975 dollars).

Campbell, R. B.↗

NASA NTRS1977

Theoretical effects of surface diffused region lifetime models on silicon solar cells

A computer simulation of silicon solar cells has indicated that the combination of band gap reduction due to heavy doping and certain spatial forms of lifetime dependence can combine to form severe limitations on the open-circuit voltage of such cells. The interaction of these effects tends to shift the active region of the diffused surface layer away from the injecting junction, resulting in an increase in the current density injected into the surface region. Reductions in open circuit voltage as great as 10% over models which do not include these effects can be seen.

Dunbar, P. M.↗

DOE OSTI2022

Bifacial all-perovskite tandem solar cells

The efficiency of all-perovskite tandem devices falls far below theoretical efficiency limits, mainly because a widening bandgap fails to increase open-circuit voltage. We report on a bifacial all-perovskite tandem structures with an equivalent efficiency of 29.3% under back-to-front irradiance ratio of 30. This increases energy yield and reduces the required bandgap of a wide-bandgap cell. Open-circuit voltage deficit is therefore minimized, although its performance under only front irradiance is not ideal. The bifacial device needs a sputtered rear transparent electrode, which could reduce photon path length and deteriorate stability of Pb-Sn perovskites. Embedding a light-scattering micrometer-sized particle layer into perovskite to trap light, effectively increases absorptance by 5 to 15% in the infrared region. Using a nonacidic hole transport layer markedly stabilizes the hole-extraction interface by avoiding proton-accelerated formation of iodine. These two strategies together increase efficiency of semitransparent Pb-Sn cells from 15.6 to 19.4%, enabling fabrication of efficient bifacial all-perovskite tandem devices.

14 SOLAR ENERGY↗

DOE OSTI2021

Evidence that Surface-Segregated Sr Phases Can Be Removed in LSCF via Ceria Pre-Infiltration, Are Less Apt to Form in SSC

Here Ce 0.9 Gd 0.1 O 1.95−x (GDC) pre-infiltration was performed on 12 vol.% La 0.6 Sr 0.4 Co 0.8 Fe 0.2 O 3−x (LSCF) or Sm 0.5 Sr 0.5 CoO 3−x (SSC) infiltrated GDC Solid Oxide Fuel Cell cathodes. The addition of 7.5 vol.% of ∼40 nm diameter GDC nanoparticles into a ∼30 μ m thick porous scaffold of partially-sintered, sub-micron GDC particles before LSCF infiltration 1) lowered the temperature needed to produce a LSCF-GDC polarization resistance ( R P ) of 0.1 Ohm*cm 2 by ∼50 °C, and 2) reduced the amount of 500 h, 650 °C open-circuit LSCF-GDC R P degradation from ∼37% to ∼6%. In contrast, GDC pre-infiltration had no effect on the initial SSC-GDC R P or the 19% in R P degradation observed during 500 h of 650 °C open-circuit aging. X-Ray Photoelectron Spectroscopy showed that GDC pre-infiltration lowered the concentration of strontium species on the surface of the initial and 650 °C-aged LSCF-GDC, but had no effect on the initial or aged SSC-GDC Sr concentrations. Similarly, Electrochemical Impedance Spectroscopy showed that for both the initial and aged LSCF-GDC, GDC pre-infiltration improved oxygen exchange at the infiltrate-backbone and infiltrate-gas interfaces, but had no effect on the SSC-GDC. Hence, GDC pre-infiltration was concluded to improve LSCF-GDC performance and durability by scavenging exsolved Sr-rich secondary phases that form on the interfaces of LSCF, but not SSC.

36 MATERIALS SCIENCE↗

NASA NTRS1972

Simplified fabrication of back surface electric field silicon cells and novel characteristics of such cells

An investigation of the characteristics and behavior of 10 ohm-cm silicon cells having abnormally high open-circuit voltages was made. The cells studied were made by a new, highly simplified, contact fabrication process which creates both a contact and a thin electric field region at the cell back surface without the need for phosphorus layer removal. These cells had open-circuit voltages of about 0.58 V and their performance as a function of thickness, temperature, and 1 MeV electron irradiation is detailed. The study showed that 10 ohm-cm back-surface-field cells can have the high initial efficiencies and desirable temperature behavior of low resistivity cells. Thin back-surface-field cells were made and showed, in addition, much greater radiation damage resistance. A mechanism is proposed to explain the results.

Mandelkorn, J.↗

NASA NTRS1972

Simplified fabrication of back surface electric field silicon cells and novel characteristics of such cells.

Mandelkorn, J.↗

NASA NTRS1975

Studies of silicon PN junction solar cells

Silicon pn junction solar cells made with low-resistivity substrates show poorer performance than traditional theory predicts. The purpose of this research was to identify and characterize the physical mechanisms responsible for the discrepancy. Attention was concentrated on the open circuit voltage in shallow junction cells of 0.1 ohm-cm substrate resistivity. A number of possible mechanisms that can occur in silicon devices were considered. Two mechanisms which are likely to be of main importance in explaining the observed low values of open-circuit voltage were found: (1) recombination losses associated with defects introduced during junction formation, and (2) inhomogeneity of defects and impurities across the area of the cell. To explore these theoretical anticipations, various diode test structures were designed and fabricated and measurement configurations for characterizing the defect properties and the areal inhomogeneity were constructed.

Lindholm, F. A.↗

NASA NTRS1979

The importance of surface recombination and energy-bandgap narrowing in p-n-junction silicon solar cells

Experimental data demonstrating the sensitivity of open-circuit voltage to front-surface conditions are presented for a variety of p-n-junction silicon solar cells. Analytical models accounting for the data are defined and supported by additional experiments. The models and the data imply that a) surface recombination significantly limits the open-circuit voltage (and the short-circuit current) of typical silicon cells, and b) energy-bandgap narrowing is important in the manifestation of these limitations. The models suggest modifications in both the structural design and the fabrication processing of the cells that would result in substantial improvements in cell performance. The benefits of one such modification - the addition of a thin thermal silicon-dioxide layer on the front surface - are indicated experimentally.

Fossum, J. G.↗

DOE OSTI2020

Arsenic Doping of Polycrystalline CdSeTe Devices for Microsecond Life-times with High Carrier Concentrations

We report seminal advances in fabrication and understanding of group V (As) doped thin-film polycrystalline CdTe-based solar cells. The devices are fabricated using a novel approach, by sublimating layers of CdSeTe and CdSeTe:As. This new method allowed us to achieve minority carrier lifetime of over 1 μs, carrier concentration of more than 5×l0 15 cc -1 and external radiative efficiency of over 2 % in a device configuration. We find an increase in open-circuit voltage when comparing As-doped, Cu-doped and undoped devices. The choice of CdSeTe instead of a CdTe-only absorber has been explained using first-principle density functional theory model. A SCAPS device model is used to analyze the potential causes for lower open-circuit voltage.

Munshi, Amit H.↗

NASA NTRS1973

A new electric field effect in silicon solar cells.

The phenomenon of high-resistivity silicon solar cells manifesting high open-circuit voltages previously observed only for cells made from low-resistivity silicon is shown to be caused by the presence of a shallow diffused region at the back surface of the cell. The basic cell structure is either n+, p, p+ or p+, n, n+. The high open-circuit voltage arises from the injection and accumulation of excess majority carriers in the bulk upon illumination or application of forward bias to the structure. A working model for the cell, designated a back surface field (BSF) cell, is described, and recent developments are cited.

Mandelkorn, J.↗

DOE OSTI2020

Arsenic Doping of Polycrystalline CdSeTe Devices for Microsecond Life-times with High Carrier Concentrations

We report seminal advances in fabrication and understanding of group V (As) doped thin-film polycrystalline CdTe-based solar cells. The devices are fabricated using a novel approach, by sublimating layers of CdSeTe and CdSeTe:As. This new method allowed us to achieve minority carrier lifetime of over 1 μs, carrier concentration of more than 5x1015 cc-1 and external radiative efficiency of over 2% in a device configuration. We find an increase in open-circuit voltage when comparing As-doped, Cu-doped and undoped devices. The choice of CdSeTe instead of a CdTe-only absorber has been explained using first-principle density functional theory model. A SCAPS device model is used to analyze the potential causes for lower open-circuit voltage.

14 SOLAR ENERGY↗

NASA NTRS1990

Reactivity of nonaqueous organic electrolytes towards lithium

The successful operation of an ambient temperature secondary lithium cell is primarily dependent on the stability of the electrolyte towards lithium. The lithium electrode on open circuit must be inert towards the electrolyte to achieve a long shelf life. The reactivity of tetrahydrofuran and 2-methyltetrahydrofuran based electrolytes with additives such as 2-methylfuran, ethylene carbonate, propylene carbonate, and 3-methylsulfolane was investigated by microcalorimetry and ac impedance spectroscopy techniques. Also the stability of electrolytes by open circuit stand tests was studied. Addition of ethylene carbonate and 2-methylfuran additives was found to improve the stability of tetrahydrofuran and 2-methyltetrahydrofuran based electrolytes. Long term microcalorimetry and ac impedance data clearly confirmed the higher stability of ethylene carbonate/2-methyltetrahydrofuran electrolyte compared to the 2-methyltetrahydrofuran and propylene carbonate/2-methyltetrahydrofuran electrolytes.

Shen, D. H.↗