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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 217 records · Page 12
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Unravelling the water oxidation mechanism on NaTaO 3 -based photocatalysts

Understanding the detailed kinetics and mechanisms of water oxidation is crucial because water oxidation is the bottleneck reaction in overall water splitting. In this work, we investigated photocatalytic water oxidation on NaTaO 3 -based photocatalysts. With in situ FT-IR spectroscopy, two new water oxidation intermediates with IR absorption peaks centered at 1058 and 935 cm –1 were observed and assigned to Ta(VI)=O and Ta(O 2 ) peroxo species, respectively. With H 2 18 O as the reactant and NaTa 16 O 3 as the photocatalyst, both 16 O 18 O and 18 O 2 were evolved continuously from overall water splitting as analyzed by mass spectroscopy (MS), demonstrating that the lattice O atoms in NaTaO 3 -based photocatalysts participate in the formation of O 2 during the reaction. DFT results are consistent with the formation of Ta=O, 16 O 18 O and 18 O 18 O intermediates and products, while predicting that several water oxidation pathways are thermodynamically accessible for water oxidation on NaTaO 3 . Based on these observations, we propose a three-step two-site mechanism for photocatalytic water oxidation on NaTaO 3 -based photocatalysts in which lattice oxygen plays a key role. The elucidation of the present mechanism should help in broadly understanding water oxidation on semiconductor-based photocatalysts.

14 SOLAR ENERGY↗
DOE OSTI2025

p-Type BiVO 4 for Solar O 2 Reduction to H 2 O 2

Photoelectrochemical cells (PECs) can directly utilize solar energy to drive chemical reactions to produce fuels and chemicals. Oxide-based photoelectrodes in general exhibit enhanced stability against photocorrosion, which is a critical advantage for building a sustainable PEC. However, most oxide-based semiconductors are n-type, and p-type oxides that can be used as photocathodes are limited. In this study, we report the synthesis, characterization, and application of p-type BiVO 4 with a monoclinic scheelite (ms) structure. ms-BiVO 4 is inherently n-type, and it has been investigated only as a photoanode to date. In this study, we prepared p-type ms-BiVO 4 (bandgap of 2.4 eV) via atomic doping of Ca 2+ at the Bi 3+ site under an O 2 -rich environment and examined its performance as a photocathode. We then demonstrated that the Ca-doped ms-BiVO 4 photocathode can be used for solar O 2 reduction to H 2 O 2 when coupled with appropriate catalysts. Our computational investigation using hybrid density functional theory revealed that holes are stable as polarons in ms-BiVO 4 and have a low self-trapping energy, that may lead to free carriers in the valence band at finite temperature. Our calculations also show that Ca is an effective shallow acceptor dopant with low formation energy and thermal ionization energy leading to p-type conductivity. In conclusion, our joint experimental and computational results provide critical insights into the design of p-type ms-BiVO 4 , enabling its use as a polaronic oxide photocathode.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Scanning tunneling spectroscopy of surface-oxidized Gallium-stabilized δ -phase plutonium

Here, the first contiguous experimental scanning tunneling spectroscopy (STS) measurements of the electronic structure of a plutonium (Pu) surface are presented and compared to current theoretical results. The experiments took place under UHV conditions, for which Pu is known to retain a native surface oxide. The STS data shows that no band gap is observable at room temperature. Theoretical calculations predict that bulk Pu oxides are semiconductors, but the spectral results for the cleaned Pu surface native oxide under UHV conditions could be better characterized as that of a semimetal.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2026

Beyond Thermal Limits: Manipulating Reactive Intermediate Coverages and Turnover Rates via Visible Photon-Mediated Catalysis on Rh-Doped Perovskite Oxides

Catalyst behavior depends on surface adsorbate energetics that are constrained by scaling relationships on metal surfaces. External stimuli (e.g., photons), however, can disrupt these limitations by modulating key intermediate coverages via non-thermal reaction pathways. Here, low-energy visible photon fluxes are utilized to selectively control coverages of strongly bound intermediates on isolated Rh active sites doped within a semiconductor perovskite oxide host (SrTiO 3 ). Red light (632 nm) facilitates selective photolytic CO desorption from rhodium gem-dicarbonyl (Rh(CO) 2 ) species that are ubiquitous reaction intermediates, including for the probe reaction studied herein CO oxidation to CO 2 . Thermochemical CO 2 formation rates (408 K) on Rh-doped SrTiO 3 are limited by adsorbed CO, exhibiting a negative apparent CO rate order (−0.6) and a positive O 2 rate order (+0.4). Arrhenius analyses, anaerobic CO oxidation measurements, and in situ spectroscopies assert that, thermochemically, lattice oxygens from the doped perovskite contribute to CO 2 formation rates. Notably, under red light illumination (0.76–2.02 W cm –2 ), the apparent CO rate order shifts to positive (+1). This, combined with decreasing apparent activation energies and CO coverages (wavelength-agnostic) with increasing photon flux, indicates that photons act selectively toward driving Rh(CO) 2 photolysis, even within complex reaction networks, thereby enhancing Rh accessibility, O 2 dissociation, and consequent rates. Finally, low-energy red light enables more stoichiometric feeds, leading to 650% higher CO 2 rates than those achieved thermally. Overall, this work elucidates how low-energy light can be leveraged, not just to improve reaction rates, but to selectively affect rates of individual elementary steps and key intermediate coverages, thereby breaking conventional scaling relationships that limit thermal catalyst performance.

catalysts↗
DOE OSTI2020

Defects in Semiconductors

All semiconductors, whether by design or by accident, contain defects. The fundamental properties of defects, such as impurities, native defects, and extended defects, affect a broad range of applications. These technologically important defects may be introduced during growth and processing. Electrical, optical, and magnetic phenomena related to defects have been observed experimentally and studied theoretically in a variety of materials. In addition to traditional semiconductors (elemental, III–V, and II–VI), emerging materials include organic semiconductors, nitrides, oxides, and topological insulators, in bulk crystal and thin-film forms as well as low-dimensional and nanoscale structures.

36 MATERIALS SCIENCE↗
DOE OSTI2022

First-principles ionized-impurity scattering and charge transport in doped materials

Scattering of carriers with ionized impurities governs charge transport in doped semiconductors. However, electron interactions with ionized impurities cannot be fully described with quantitative first-principles calculations, so their understanding relies primarily on simplified models. Here we show an ab initio approach to compute the interactions between electrons and ionized impurities or other charged defects. It includes the short- and long-range electron-defect (e-d) interactions on equal footing and allows for efficient interpolation of the e-d matrix elements. Here we combine the e-d and electron-phonon interactions in the Boltzmann transport equation to compute the carrier mobilities in doped silicon over a wide range of temperature and doping concentrations, seamlessly spanning the defect- and phonon-limited transport regimes. The individual contributions of the defect- and phonon-scattering mechanisms to the carrier relaxation times and mean-free paths are analyzed. Our method provides a powerful tool to study electronic interactions in doped materials. It broadens the scope of first-principles transport calculations, enabling studies of a wide range of doped semiconductors and oxides with application to electronics, energy, and quantum technologies.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Proton radiation effects in indium oxide using cascade molecular dynamics simulations

Metal oxide (MO) semiconductors, characterized by their wide band gaps and notable charge transport properties, are promising candidates for electronic applications in extreme environments, including near-Earth space. However, atomistic simulations of radiation–matter interactions in MOs remain challenging due to the limitations of existing interatomic potentials, which often fail to capture both the short-range repulsive forces essential for radiation damage modeling and the long-range electrostatic effects governing defect evolution. In this work, we develop a customized interatomic potential tailored for radiation damage simulations in indium oxide (In 2 O 3 ) as a model system, a representative MO material. Our potential integrates the Ziegler-Biersack-Littmark potential to accurately describe short-range interactions with Buckingham and Coulombic potentials to account for long-range forces. We perform molecular dynamics simulations of low-energy proton irradiation using this custom potential. We employ the primary knock-on atom (PKA) cascade method to study atomic displacements and primary defect formation. Simulations were conducted for 1 keV proton irradiation in four randomly chosen directions, and PKA-driven defect analyses at 5, 10, and 15 keV to examine the effects of direction and energy level on damage generation. Our results provide insight into the impact of irradiation direction and energy level on the cascade evolution and defect formation mechanisms.

Atomistic simulations↗
DOE OSTI2022

A trapping tolerant drain current based temperature measurement of β -Ga 2 O 3 MOSFETs

The drain current temperature dependence is an efficient way to determine the channel temperature in semiconductor devices; however, it has been challenging to use due to the potential interference of trapping effects. A trapping tolerant method is proposed, illustrated here for Ga 2 O 3 MOSFETs, making in situ temperature measurements possible, allowing a thermal resistance of 59 K∙mm/W to be measured in Ga 2 O 3 MOSFETs. However, neglecting the effect of trapping causes an error of ~15% in the channel temperature measured using the drain current. 3D simulations show that the measured channel temperature is the average temperature value between source and drain contact.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2024

Four-Terminal Electrochemistry: A Back-Gate Controls the Electrochemical Potential of a 2D Working Electrode

We demonstrate that ultrathin semiconductor working electrodes integrated into metal–insulator–semiconductor (MIS) stacks are an enabling platform for understanding non-Faradaic semiconductor electrochemistry. Furthermore, 5 nm thick ZnO electrodes were deposited on 30 nm HfO 2 dielectric on a Pd “gate” electrode. Application of a bias V G between the Pd gate and the ZnO electrode causes electrons to accumulate in the ZnO layer as measured by recording the in-plane sheet conductance. By contacting the top surface of the ZnO layer with the electrolyte in a conventional three-electrode electrochemical cell, we show that the gate voltage V G modulates the electrochemical potential V ZnO of the ZnO film with respect to a reference electrode. Electrochemical potential changes ΔV ZnO up to –1 V vs Ag/Ag + are achieved for V G = +7 V. Furthermore, by measuring V ZnO vs V G , we extract the quantum capacitance CQ of the ZnO film as a function of the Fermi-level position, which provides a direct measure of the ZnO electronic density of states (DOS). Finally, we demonstrate that the gated ZnO working electrodes can disentangle the two principal components of electrochemical potential, namely, the Fermi-level shift Δδ and the double-layer charging energy eΔΦ EDL . This disentanglement hinges on a fundamental difference between back-gating and normal electrochemical control, namely, that electrochemical control requires double-layer charging, while back-gate control does not. Collectively, the results show that the backside gate electrode is an effective fourth terminal that enables measurements that are difficult to achieve in conventional three-terminal electrochemical setups.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Impact of cobalt doping on structural and magnetic properties of zinc oxide nanocomposites synthesized by mechanical ball-milling method

A series of zinc oxide (ZnO) semiconductor nanocomposite samples doped with different concentrations of cobalt (Co) were successfully synthesized via simple and highly effective mechanical ball-milling method using suitable precursors. All doped nanocomposites crystallized in hexagonal wurtzite formation of ZnO. No alteration in the wurtzite structure, with no evidence of any segregated secondary phase(s) was detected with increasing doping concentrations. This result unambiguously verified the substitution of Zn 2+ sites by Co 2+ ions in the ZnO host lattice for different doping concentrations. Moreover, room temperature ferromagnetic behavior was observed in all doped nanocomposite samples in the reported work. Present study clearly shows that mechanical ball-milling is a facile, inexpensive, eco-friendly method to synthesize crystalline and magnetic Co doped ZnO nanocomposites for next generation spin-based devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Effect of oxide layer growth conditions on radiation detection performance of Ni/SiO 2 /epi-4H-SiC MOS capacitors

We report high resolution radiation detection has been demonstrated using Ni/SiO2/n-4H-SiC metal-oxidesemiconductor vertical capacitors fabricated using highly crystalline 4H-SiC epilayers. The oxide layers have been grown thermally using two different approaches: i) in-air, and ii) oxygen-ambience oxidation. The devices fabricated using the former method exhibited dark currents one order of magnitude higher than that in the latter. The observed difference has been attributed to the back-contact series resistance and capacitance. Regardless of the difference in the device parameters, detectors prepared using both of the methods exhibited very high energy resolutions of ≤ 0.5% for 5486 keV alpha particles emitted by an 241Am radioisotope. Capacitance mode deep level transient spectroscopic (DLTS) studies revealed similar type of electrically active defects along with Z1/2 and EH5 deep level defects in both the types of devices. The DLTS scans also revealed positive polarity peaks in these devices which indicate emission from minority carrier trap centers. The activation energy corresponding to the peak was found to be ~1.2 eV which has been assigned to HK3 defects responsible for hole trapping in 4H-SiC. The possibility of appearance of the positive peak due to non-negligible impedance of the back-contact has been ruled out based on the observation that the centroid of the observed peak did not change with detectors having different device parameters.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Calibration and field deployment of low-cost sensor network to monitor underground pipeline leakage

Recent technological advances in methane detection have improved leak detection and repair. However, current methods to reliably measure methane concentrations rely on expensive instruments or demand significant labor input. There is interest in using affordable methane sensors that are responsive to ppmv level changes in methane concentrations in both urban and rural environments for monitoring underground natural gas pipeline leaks. This is especially relevant for situations where potentially significant leaks cannot be repaired immediately or smaller leaks that require long-term monitoring and further evaluation. In this work, a low-cost sensor unit, equipped with a metal oxide sensor, was designed, built, and calibrated over a wide range of methane concentrations and environmental conditions in preparation for field application. A network of these sensors was then installed at the test site and used to measure methane concentrations at ground level above known sub-surface natural gas emissions which emulated underground gas pipeline leaks. This low-cost sensor network measured over 4 days total for the two different known leakage rates. Results demonstrate that the sensors can continuously measure relative methane variability for extended periods but require calibration for a wide range of temperature and humidity conditions to properly determine absolute gas (i.e., methane) concentrations. Furthermore, when a regression analysis was conducted to evaluate the effects of meteorological parameters on methane concentration, air temperature and wind speed have strong impacts on the concentration. Overall, the network approach allows improved identification of leak location and monitoring of underground natural gas leaks.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Mitigating humidity interference in chemiresistive hydrogen sensors through hydrophobic surface functionalization

Chemiresistive gas sensors based on semiconductor metal oxides, such as tin dioxide (SnO₂), are indispensable for detecting and monitoring toxic gases and pollutants, making them critical components in industrial and environmental applications. To enhance their performance, the metal oxides are loaded with noble metals such as palladium (Pd). However, ambient humidity poses a significant challenge to their performance. The presence of adsorbed water molecules on the oxide surface can considerably impair sensor sensitivity and overall performance. To address this issue, in this paper, we report on the application of an ultrathin, hydrophobic layer of hexamethyldisilazane to the surface of a Pd/SnO 2 sensor. This study investigates the influence of hydrophobic surface modifications on the metal oxide interface, focusing on their impact on sensor sensitivity and selectivity. The resulting sensor exhibits superior hydrogen sensing capabilities, operating effectively at low temperatures even in high humidity environments. Furthermore, the hydrophobic modification reduces the sensor’s susceptibility to interfering gases, thus enhancing its selectivity. The combined enhancements in moisture resistance and selectivity achieved through HMDS surface modification, along with the superior sensitivity of Pd/SnO₂ sensors, facilitate the development of gas sensors with enhanced humidity tolerance and broader applications.

Chemiresistive gas sensors↗
DOE OSTI2020

Colloidal crystal engineering with metal–organic framework nanoparticles and DNA

Abstract Colloidal crystal engineering with nucleic acid-modified nanoparticles is a powerful way for preparing 3D superlattices, which may be useful in many areas, including catalysis, sensing, and photonics. To date, the building blocks studied have been primarily based upon metals, metal oxides, chalcogenide semiconductors, and proteins. Here, we show that metal–organic framework nanoparticles (MOF NPs) densely functionalized with oligonucleotides can be programmed to crystallize into a diverse set of superlattices with well-defined crystal symmetries and compositions. Electron microscopy and small-angle X-ray scattering characterization confirm the formation of single-component MOF superlattices, binary MOF–Au single crystals, and two-dimensional MOF nanorod assemblies. Importantly, DNA-modified porphyrinic MOF nanorods (PCN-222) were assembled into 2D superlattices and found to be catalytically active for the photooxidation of 2-chloroethyl ethyl sulfide (CEES, a chemical warfare simulant of mustard gas). Taken together, these new materials and methods provide access to colloidal crystals that incorporate particles with the well-established designer properties of MOFs and, therefore, increase the scope of possibilities for colloidal crystal engineering with DNA.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2021

Surface lattice engineering for fine-tuned spatial configuration of nanocrystals

Hybrid nanocrystals combining different properties together are important multifunctional materials that underpin further development in catalysis, energy storage, et al., and they are often constructed using heterogeneous seeded growth. Their spatial configuration (shape, composition, and dimension) is primarily determined by the heterogeneous deposition process which depends on the lattice mismatch between deposited material and seed. Precise control of nanocrystals spatial configuration is crucial to applications, but suffers from the limited tunability of lattice mismatch. Here, we demonstrate that surface lattice engineering can be used to break this bottleneck. Surface lattices of various Au nanocrystal seeds are fine-tuned using this strategy regardless of their shape, size, and crystalline structure, creating adjustable lattice mismatch for subsequent growth of other metals; hence, diverse hybrid nanocrystals with fine-tuned spatial configuration can be synthesized. This study may pave a general approach for rationally designing and constructing target nanocrystals including metal, semiconductor, and oxide.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2025

Mobility and threshold voltage extraction in transistors with gate-voltage-dependent contact resistance

The mobility of emerging (e.g., two-dimensional, oxide, organic) semiconductors is commonly estimated from transistor current-voltage measurements. However, such devices often experience contact gating, i.e., electric fields from the gate modulate the contact resistance during measurements, which can lead conventional extraction techniques to estimate mobility incorrectly even by a factor >2. Although this error can be minimized by measuring transistors at high gate-source bias |V gs |, this regime is often inaccessible in emerging devices that suffer from high contact resistance or early gate dielectric breakdown. Here, we propose a method of extracting mobility in transistors with gate-dependent contact resistance that does not require operation at high |V gs |, enabling accurate mobility extraction even in emerging transistors with strong contact gating. Our approach relies on updating the transfer length method (TLM) and can achieve <10% error even in regimes where conventional techniques overestimate mobility by >2×

36 MATERIALS SCIENCE↗
DOE OSTI2021

LaMer's 1950 model of particle formation: a review and critical analysis of its classical nucleation and fluctuation theory basis, of competing models and mechanisms for phase-changes and particle formation, and then of its application to silver halide, semiconductor, metal, and metal-oxide nanoparticles

Are classical nucleation theory and the 1950 LaMer model of particle formation supported for a wide range of particle formations, or do competing models in the form of chemical reaction mechanisms have better experimental support? Read on to find out.

Whitehead, Christopher B.↗
DOE OSTI2020

Deep level transient spectroscopy investigation of ultra-wide bandgap ($\bar201$) and ($001$) β -Ga 2 O 3

Here, this work reports on a comprehensive examination of the electrical and thermal properties of vertical Schottky diodes fabricated on ($\bar201$) and ($001$)-oriented samples of β-Ga 2 O 3 . The temperature-dependent current–voltage (I–V) and capacitance–voltage (C–V) data were gathered and analyzed down to 60 K. Deep level transient spectroscopy (DLTS) was used to study bulk and interface defects in the two materials from approx. 325 K down to 60 K. In the bulk ($\bar201$) material, an electron trap was observed at E C -0.46 eV, with a capture cross section of 1.6 x 10 -14 cm 2 and a lambda-corrected maximum trap density of 9.08 x 10 15 cm -3 . These results and others indicate that the electron trap is a strong candidate for the well-known E1 defect in β-Ga 2 O 3 based on recent investigations. Additionally, in the ($\bar201$) material, the smooth modulation typical of interface states is evident at temperatures below 275 K. The ($001$) samples manifested what is likely the E2* electron trap at E C -0.68 eV, with a capture cross section of 1.64 x 10 -15 cm 2 and a lambda-corrected maximum trap density of 8.85 x 10 15 cm -3 . The presence of the E2* defect, in particular, is a contrast to the findings of recent DLTS investigations on β-Ga 2 O 3 , which report that E2* emerged only after low-energy proton irradiation. These results help to further map out the defect signatures found in β-Ga 2 O 3 materials, which are of vital importance in the design and fabrication of future β-Ga 2 O 3 devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗