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At least 217 records · Page 12

Controlled decomposition and oxidation: A treatment method for gaseous process effluents

The safe disposal of effluent gases produced by the electronics industry deserves special attention. Due to the hazardous nature of many of the materials used, it is essential to control and treat the reactants and reactant by-products as they are exhausted from the process tool and prior to their release into the manufacturing facility's exhaust system and the atmosphere. Controlled decomposition and oxidation (CDO) is one method of treating effluent gases from thin film deposition processes. CDO equipment applications, field experience, and results of the use of CDO equipment and technological advances gained from the field experiences are discussed.

Mckinley, Roger J. B., Sr.↗

Thin film growth of the 2122-phase of BCSCO superconductor with high degree of crystalline perfection

Thin films of the 80 K-phase of BiCaSrCu-oxide superconductor having the composition of Bi2Ca1.05Sr2.1Cu2.19O(x) and high degree of crystalline perfection have been grown on c-axis oriented twin free single crystal substrates of NdGaO3. This has been achieved by carefully establishing the growth conditions of the LPE experiments. The temperature regime of 850 to 830 C and quenching of the specimens on the termination of the growth period are found to be pertinent for the growth of quasi-single crystalline superconducting BCSCO films on NdGaO3 substrates. The TEM analysis reveals a single crystalline nature of these films which exhibit 100 percent reflectivity in infrared regions at liquid nitrogen temperature.

Raina, K. K.↗

The Impact of Standard Semiconductor Fabrication Processes on Polycrystalline Nb Thin Film Surfaces

Polycrystalline Nb thin films are extensively used for microwave kinetic inductance detectors (MKIDs) and superconducting transmission line applications. The microwave and mm-wave loss in these films is impacted, in part, by the presence of surface nitrides and oxides. In this study, glancing incidence x-ray diffraction was used to identify the presence of niobium nitride and niobium monoxide surface layers on Nb thin films which had been exposed to chemicals used in standard photolithographic processing. A method of mitigating the presence of ordered niobium monoxide surface layers is presented. Furthermore, we discuss the possibility of using glancing incidence x-ray diffraction as a non-destructive diagnostic tool for evaluating the quality of Nb thin films used in MKIDs and transmission lines. For a given fabrication process, we have both the X-ray diffraction data of the surface chemistry and a measure of the mm-wave and microwave loss, the latter being made in superconducting resonators.

superconducting films↗

The Impact of Standard Semiconductor Fabrication Processes on Polycrystalline Nb Thin Film Surfaces

Polycrystalline Nb thin films are extensively used for microwave kinetic inductance detectors (MKIDs) and superconducting transmission line applications. The microwave and mm-wave loss in these films is impacted, in part, by the presence of surface nitrides and oxides. In this study, glancing incidence x-ray diffraction was used to identify the presence of niobium nitride and niobium monoxide surface layers on Nb thin films which had been exposed to chemicals used in standard photolithographic processing. A method of mitigating the presence of ordered niobium monoxide surface layers is presented. Furthermore, we discuss the possibility of using glancing incidence x-ray diffraction as a non-destructive diagnostic tool for evaluating the quality of Nb thin films used in MKIDs and transmission lines. For a given fabrication process, we have both the X-ray diffraction data of the surface chemistry and a measure of the mm-wave and microwave loss, the latter being made in superconducting resonators.

superconducting films↗

A conformal oxidation-resistant, plasma-polymerized coating

A comparative study was made of the surface recession (etching) of thin films of plasma polymerized tetrafluoro ethylene (PPTFE), polytetrafluoro ethylene (PTFE), and ion-beam sputter deposited polytetrafluoro ethylene (SPTFE) exposed to ground-state atomic oxygen downstream from a nonequilibrium radio-frequency O2 plasma. At 22 C, the etch rates for PTFE, SPTFE, and PPTFE were in the ratio of 8.7:1.8:1.0. A thin, conformal coating of PPTFE (etch rate of 0.3 nm/h at 22 C) was found to protect an underlying cast film of a reactive polymer, cis-1,4 polybutadiene, against ground-state atomic oxygen attack for the time required to fully etch away the PPTFE coating. From ESCA analysis, PTFE exhibited only minor surface oxidation (uptake of 0.5 atom percent O) upon etching, its F/C ratio decreasing slightly from 2.00 to 1.97; PPTFE exhibited considerable surface oxidation (uptake of 5.9 atom percent O) intermediate between those of PTFE and PPTFE, with a decrease in F/C ratio from 1.73 to 1.67. A plasma-polymerized fluorocarbon coating such as PPTFE might be useful for space applications to protect polymers that are vulnerable to oxidation or degradation by oxygen atoms.

Golub, Morton A.↗

Method for producing solar energy panels by automation

A solar cell panel was fabricated by photoetching a pattern of collector grid systems with appropriate interconnections and bus bar tabs into a glass or plastic sheet. These regions were then filled with a first, thin conductive metal film followed by a layer of a mixed metal oxide, such as InAsO or InSnO. The multiplicity of solar cells were bonded between the protective sheet at the sites of the collector grid systems and a back electrode substrate by conductive metal filled epoxy to complete the fabrication of an integrated solar panel.

Evans, J. C., Jr.↗

Analysis of the performance of the space ultravacuum research facility in attached and free-flyer mode

The old concept of using the wake of a spacecraft to obtain an ultrahigh vacuum is revisited with a somewhat different emphasis. Since it is possible to configure a wake shield so that a surface of interest does not subtend any walls that could become contaminated, it appears that it should be possible to achieve a contamination-free, ultrahigh vacuum capability with infinite pumping speed even in the presence of high heat loads and moderate gas loads. With the new interest in developing thin films with precision controlled synthetic microstructures such as superlattices, mixed metal oxide high temperature superconductors, rare-earth magneto-optical devices, and nano-crystalline alloys, the ability to work with a variety of different materials without cross contamination should be of significance. This paper analyzes the performance of the conceptual design for a Space Ultravacuum Research Facility (SURF), both in a Shuttle-attached mode and as a free-flyer. It is shown that even in the Shuttle-attached mode, it should be possible to obtain vacuum levels equivalent to 10 to the -10 Torr with O and N2 as the primary constituents. This should be sufficient to demonstrate the feasibility of the concept, particularly the infinite pumping speed and virtual elimination of contamination aspects. As a free-flyer the SURF will be limited primarily by the gas load associated with the process being performed. For chemical beam epitaxy (CBE) it is shown that equivalent vacuum levels of 10 to the -14 Torr should be possible at 300 km.

Naumann, Robert J.↗

X-Ray Absorption Spectroscopy in High Temperature Oxidation of Metals and Alloys

An experimental technique is described that allows for the joint study of the kinetics and of the oxide structure during the high temperature oxidation of metal surfaces. Oxygen is supplied at the metal through an electrochemical oxygen pump and the oxygen pressure, at the metal surface, is measured during oxidation by a YSZ (yttria stabilized zirconia) oxygen sensor. XAS (x-ray absorption spectroscopy) is performed in fluorescence mode at the cation K edge and after each oxidation step. An appropriate analysis of the XAS spectra could provide information on both the oxidation kinetics and oxide structure. Experimental data on the high temperature oxidation of nickel, cobalt, and Fe(64%)Ni(36%) alloy, at low oxygen pressure, are reported and analyzed according to the proposed data reduction. These results indicate the presented technique to be particularly suitable for studying the hot corrosion of oxide film too thick for common surface spectroscopy (AUGER, ESCA) and too thin for conventional thermogravimetric technique.

Daniele Gozzi↗

Superconducting materials processing

The effects of materials processing on the properties and behavior of high temperature yttrium barium copper oxide (YBCO) superconductors were investigated. Electrical, magnetic, and structural characteristics of thin films (300 nm) YBA2CU3O(delta) structures grown by pulsed laser deposition on LaAlO3 and SrTiO3 substrates were used to evaluate processing. Pole projection and thin film diffraction measurements were used to establish grain orientation and verify structural integrity of the samples. Susceptibility magnetization, and transport measurements were used to evaluate the magnetic and electrical transport properties of the samples. Our results verified that an unfortunate consequence of processing is inherent changes to the internal structure of the material. This effect translates into modifications in the properties of the materials, and undesired feature that makes it very difficult to consistently predict material behavior. The results show that processing evaluation must incorporate a comprehensive understanding of the properties of the materials. Future studies will emphasize microstructural characteristics of the materials, in particular, those microscopic properties that map macroscopic behavior.

Hurley, John S.↗

Deep Etching Process Developed for the Fabrication of Silicon Carbide Microsystems

Silicon carbide (SiC), because of its superior electrical and mechanical properties at elevated temperatures, is a nearly ideal material for the microminiature sensors and actuators that are used in harsh environments where temperatures may reach 600 C or greater. Deep etching using plasma methods is one of the key processes used to fabricate silicon microsystems for more benign environments, but SiC has proven to be a more difficult material to etch, and etch depths in SiC have been limited to several micrometers. Recently, the Sensors and Electronics Technology Branch at the NASA Glenn Research Center at Lewis Field developed a plasma etching process that was shown to be capable of etching SiC to a depth of 60 mm. Deep etching of SiC is achieved by inductive coupling of radiofrequency electrical energy to a sulfur hexafluoride (SF6) plasma to direct a high flux of energetic ions and reactive fluorine atoms to the SiC surface. The plasma etch is performed at a low pressure, 5 mtorr, which together with a high gas throughput, provides for rapid removal of the gaseous etch products. The lateral topology of the SiC microstructure is defined by a thin film of etch-resistant material, such as indium-tin-oxide, which is patterned using conventional photolithographic processes. Ions from the plasma bombard the exposed SiC surfaces and supply the energy needed to initiate a reaction between SiC and atomic fluorine. In the absence of ion bombardment, no reaction occurs, so surfaces perpendicular to the wafer surface (the etch sidewalls) are etched slowly, yielding the desired vertical sidewalls.

Beheim, Glenn M.↗

Growth of Bio Sensor Materials by Physical Vapor Transport Method

Recently there is a big thrust on bio-inspired sensors and there has been a large rise in the investment and expectations for nanotechnology to meet these goals. For in situ sensor development materials deposition on substrate is essential part of device development. Physical vapor deposition (PVD), chemical vapor deposition (CVD) and molecular organic vapor deposition methods have developed for growth of semiconductor bulk and thin film growth with some modifications have been used for these materials. Oxides and other elements of the VI group such as sulfides and selenides are key components in the skins of many species. Growth of ordered structures containing these elements have been achieved by using PVD method. This paper describes effect of growth parameters during PVD growth on the quality of materials. Growth kinetics and mechanism will be discussed for the vertical and horizontal growth reactors. Since most of the efficient materials systems are multinary and in many cases non-congruent, PVD provides a pathway to grow materials below melting temperature.

Sachs, David↗

Advanced Al Mirrors Protected with LiF Overcoat to Realize Stable Mirror Coatings for Astronomical Telescopes

Pure Aluminum (Al) exhibits intrinsic high reflectance over the proposed Large UV/Optical/IR (LUVOIR) Surveyor observatory target spectral range (90-2500 nm). However, Al coatings have to be protected from oxygen exposure in order to prevent the formation of the naturally occurring Al2O3 oxide layer, which limit performance for use only above 160 nm. Aluminum protected with fluorides such as LiF or MgF2 have been the most commonly used solutions. But below 102 nm and down to 90 nm, no transparent material is available to protect Al and coating mirror reflectance stays below 40%. But even above 102 nm, the reflectance of protected Al is limited by the residual absorption of the fluoride overcoats. Hence, this paper will report on recent advances in producing enhanced Al-based mirror coatings with the highest possible far-ultraviolet (FUV) reflectance, while exhibiting a more stable LiF protection layer. The process starts with a bare optically smooth glass substrate that is coated with Al in an ultra-high vacuum chamber by using the physical vapor deposition (PVD) process, which has been shown to provide the best aluminum thin-films when compared to other approaches. The next step is done by in-situ exposure of the freshly made Al film to a reactive XeF2 gas that will grant a thin AlF3 overcoat (2-3 nm) to the Al film that prevents further oxidation. This fluorinated Al film is then coated with a final layer of a LiF metal-fluoride overcoat. The coating process is finalized with a second exposure to the XeF2 precursor gas. The preparation of these mirror coatings will be studied and analyzed as a function of the XeF2 exposure time and deposition rate of the LiF layer during the PVD process. This paper will present and discuss characterization of a number of Al+XeLiF witness coupons produced with this reactive PVD (rPVD) process. These studies include characterization of specular reflectance in the 90-2500 nm spectral range, micro-roughness, long-term stability, as well as polarization characteristics in the visible and near-infrared spectral regions. These studies have been performed in order to demonstrate the improved reflectance performance, longer durability, and less hygroscopic nature of protected Al mirrors produced with the rPVD process (through exposure to XeF2) and in comparison with the standard PVD process.

optics↗

Chemical reaction of atomic oxygen with evaporated films of copper, part 4

Evaporated copper films were exposed to an atomic oxygen flux of 1.4 x 10(exp 17) atoms/sq cm per sec at temperatures in the range 285 to 375 F (140 to 191 C) for time intervals between 2 and 50 minutes. Rutherford backscattering spectroscopy (RBS) was used to determine the thickness of the oxide layers formed and the ratio of the number of copper to oxygen atoms in the layers. Oxide film thicknesses ranged from 50 to 3000 A (0.005 to 0.3 microns, or equivalently, 5 x 10(exp -9) to 3 x 10(exp -7); it was determined that the primary oxide phase was Cu2O. The growth law was found to be parabolic (L(t) varies as t(exp 1/2)), in which the oxide thickness L(t) increases as the square root of the exposure time t. The analysis of the data is consistent with either of the two parabolic growth laws. (The thin-film parabolic growth law is based on the assumption that the process is diffusion controlled, with the space charge within the growing oxide layer being negligible. The thick-film parabolic growth law is also based on a diffusion controlled process, but space-charge neutrality prevails locally within very thick oxides.) In the absence of a voltage measurement across the growing oxide, a distinction between the two mechanisms cannot be made, nor can growth by the diffusion of neutral atomic oxygen be entirely ruled out. The activation energy for the reaction is on the order of 1.1 eV (1.76 x 10(exp -19) joule, or equivalently, 25.3 kcal/mole).

Fromhold, A. T.↗

The Impact of Standard Semiconductor Fabrication Processes on Polycrystalline Nb Thin Film Surfaces

Polycrystalline superconducting Nb thin films are extensively used for submillimeter and millimeter transmission line applications and, less commonly, used in microwave kinetic inductance detector (MKID) applications. The microwave and mm-wave loss in these films is impacted, in part, by the presence of surface nitrides and oxides. In this study, glancing incidence x-ray diffraction was used to identify the presence of niobium nitride and niobium monoxide surface layers on Nb thin films which had been exposed to chemicals used in standard photolithographic processing. A method of mitigating the presence of ordered niobium monoxide surface layers is presented. Furthermore, we discuss the possibility of using glancing incidence x-ray diffraction as a non-destructive diagnostic tool for evaluating the quality of Nb thin films used in MKIDs and transmission lines. For a given fabrication process, we have both the x-ray diffraction data of the surface chemistry and a measure of the mm-wave and microwave loss, the latter being made in superconducting resonators.

superconducting films↗

Charge-flow structures as polymeric early-warning fire alarm devices

The charge-flow transistor (CFT) and its applications for fire detection and gas sensing were investigated. The utility of various thin film polymers as possible sensing materials was determined. One polymer, PAPA, showed promise as a relative humidity sensor; two others, PFI and PSB, were found to be particularly suitable for fire detection. The behavior of the charge-flow capacitor, which is basically a parallel-plate capacitor with a polymer-filled gap in the metallic tip electrode, was successfully modeled as an RC transmission line. Prototype charge-flow transistors were fabricated and tested. The effective threshold voltage of this metal oxide semiconductor was found to be dependent on whether surface or bulk conduction in the thin film was dominant. Fire tests with a PFI-coated CFT indicate good sensitivity to smouldering fires.

Sechen, C. M.↗

Ester oxidation on an aluminum surface using chemiluminescence

The oxidation characteristics of a pure ester (trimethyolpropane triheptanoate) were studied by using a chemiluminescence technique. Tests were run in a thin film microoxidation apparatus with an aluminum alloy catalyst. Conditions included a pure oxygen atmosphere and a temperature range of 176 to 206 C. Results indicated that oxidation of the ester (containing .001 M diphenylanthracene as an intensifier) was accompanied by emission of light. The maximum intensity of light emission was a function of the amount of ester, the concentration of intensifier, and the test temperature. The induction period, or the time to reach one-half of maximum intensity was inversely proportional to test temperature. Decreases in light emission at the later stages of a test were caused by depletion of the intensifier.

Jones, William R., Jr.↗

Low-gravity electrodeposition and growth of polymer thin films with large third-order optical nonlinearities by electrochemical processes for devices: Thiophene-based polymers

It has been proposed that NLO thin film properties may be improved by low-gravity processing. Strong candidates for NLO thin film applications are the polythiophenes. Polymeric thiophenes are attractive materials due to their ease of preparation, stability, and high X(exp 3). A simple and convenient method for preparation of polythiophenes is electrochemical oxidation. We will apply some of our experience and lessons learned in low-gravity metal, metal/cermet electrode position to improve the quality of polythiophene(s) thin films. In low gravity electrode position of Ni at a high rate on an Au substrate often results in the production of an x-ray non diffracting surface. Cobalt metal deposition does not give this result nor does Ni when deposited similarly on a glassy carbon substrate. Co/Ni alloy composition produced during electrode position is strongly dependent upon the amount of convection. Code position of neutral inert cermets with metals is influenced significantly by the presence of gravity and the size of the cermets. Tracks left in the 1-g surfaces by unsuccessful particle occlusion indicate suspension of the large particles is not the only reason for poor volume percentages of the larger particles in the deposits. All size particles are more homogeneously distributed in the deposits in low-gravity electrocodeposition than in 1-g. Low gravity gives larger volume percentages for the larger particles in the deposits, while 1-g gives larger volume percentages for the smaller particles. Intermediate size particles give mixed results. The experimental cells were constructed with flat electrode end plates such that 1-g bench reference electrode positions could be carried out at various orientations with respect to gravity. A series of bench studies using similar designed cells are suggested so that convection modification can be applied to electrochemical thin film preparation. Convection effects can then be coupled with other parameter variations in current, temperature, concentration, solvent, electrolyte, and anode substrates to optimize the properties of NLO thin films before resorting to low-gravity processing.

Penn, Benjamin G.↗

Dielectric materials for use in thin-film capacitors

Investigation report presents details of dielectric properties of various metals measured at 300 degrees K for thermally evaporated oxides from 300 to 6000 A in thickness. It is relevant to the medium of integrated circuitry.

Carr, H. E.↗