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At least 217 records · Page 12

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NASA NTRS2016

Bladed Terrain on Pluto: Possible Origins and Evolutions

Pluto’s Bladed Terrain (centered roughly 20°N, 225°E) covers the flanks and crests of the informally named Tartarus Dorsa with numerous roughly aligned blade-like ridges oriented ~North-South; it may also stretch considerably farther east onto the non-close approach hemisphere but that inference is tentative. Individual ridges are typically several hundred meters high, and are spaced 5 to 10 km crest to crest, separated by Vshaped valleys. Many ridges merge at acute angles to form Y-shape junctions in plan view. The principle composition of the blades themselves we suspect is methane or a methane-rich mixture. (Methane is spectroscopically strongly observed on the optical surfaces of blades.) Nitrogen ice is very probably too soft to support their topography. Cemented mixtures of volatile and non-volatile ices may also provide a degradable but relief supporting “bedrock” for the blades, perhaps analogous to Callisto. Currently we are considering several hypotheses for the origins of the deposit from which Bladed Terrain has evolved, including aeolian disposition, atmospheric condensation, updoming and exhumation, volcanic intrusions or extrusions, crystal growth, among others. We are reviewing several processes as candidate creators or sculptors of the blades. Perhaps they are primary depositional patterns such as dunes, or differential condensation patterns (like on Callisto), or fissure extrusions. Or alternatively perhaps they are the consequence of differential erosion (such as sublimation erosion widening and deepening along cracks), variations in substrate properties, mass wasting into the subsurface, or sculpted by a combination of directional winds and solar isolation orientation. We will consider the roles of the long-term increasing solar flux and short periods of warm thick atmospheres. Hypotheses will be ordered based on observational constrains and modeling to be presented at the conference.

Nitrogen ice↗

DOE OSTI2023

Mitigating challenges in aberration-corrected electron-beam lithography on electron-opaque substrates

Aberration-corrected electron-beam lithography (AC-EBL) using ultra-thin electron transparent membranes has achieved single-digit nanometer resolution in two widely used electron-beam resists: poly (methyl methacrylate) (PMMA) and hydrogen silsesquioxane. On the other hand, AC-EBL implementation on thick, electron-opaque substrates is appealing for conventional top-down fabrication of quantum devices with nanometer-scale features. To investigate the performance of AC-EBL on thick substrates, we measured the lithographic point spread function of a 200 keV aberration-corrected scanning transmission electron microscope by defining both positive and negative patterns in PMMA thin films, spin-cast on thick SiO 2 /Si substrates. We present the problems encountered during pre-exposure beam focusing and discuss methods to overcome them. In addition, applying some of these methods using commercial 50 nm thick SiN X membranes with thick Si support frames, we printed arrays of holes in PMMA with pitches around 26 nm on SiN X /Si substrates with increasing Si thickness. Here, our results show that proximity effects from even 50 nm thick SiN X membranes limit hole arrays to 20 nm pitch; however, down to this limit, the effect of the substrate thickness on the pattern quality is minimal. These results highlight the need for novel resists less susceptible to proximity effects, or resists which can be used directly, after development, as the dielectric material in periodic gates in 2D quantum devices.

2D quantum devices↗

NASA NTRS1973

Development of porcelain enamel passive thermal control coatings

A white porcelain enamel coating was developed for application to high temperature metallic alloy substrates on spacecraft. The coating consists of an optically opacifying zirconia pigment, a lithia-zirconia-silica frit, and an inorganic pigment dispersant. The coating is fired at 1000 to 1150 C to form the enamel. The coating has a solar absorptance of 0.22 and a total normal emittance of 0.82 for a 0.017 cm thick coating. The coating exhibits excellent adhesion, cleanability, and integrity and is thermal shock resistant to 900 C. Capability to coat large panels has been demonstrated by successful coating of 30 cm x 30 cm Hastelloy X alloy panels. Preliminary development of low temperature enamels for application to aluminum and titanium alloy substrates was initiated. It was determined that both leaded and leadless frits were feasible when applied with appropriate mill fluxes. Indications were that opacification could be achieved at firing temperatures below 540 C for extended periods of time.

Levin, H.↗

NASA NTRS1994

(abstract) Transmission Electron Microscopy of Al(sub x)Ga(sub 1-x)N/SiC Multilayer Structures Grown on Sapphire Substrates

The potential of wide-band-gap III-V nitrides as ultraviolet sensors and light emitters has prompted an increasing amount of work recently, including the fabrication of the first UV sensors from as-deposited single crystal GaN. We have used high resolution transmission electron microscopy (TEM) to study the microstructure of two novel developments of wide-band-gap III-V nitrides: the growth of ultra-short period GaN/AlN superlattices; and the incorporation of SiC layers into Al(sub x)Ga(sub 1-x)N structures. By varying the relative periods in a GaN/AlN superlattice, the band gap of the composite can be tailored to lie between the elemental values of 365 nm for GaN and 200 nm for AlN. The group IV semiconductor, SiC, has a wide band-gap and has a close lattice match (less than 3 %) to Al(sub x)Ga(sub 1-x)N for growth on the basal plane. Demonstration of epitaxial growth for Al(sub x)Ga(sub 1-x)N/SiC multilayers would introduce a wide band-gap analog to the already existing family of III-V and Si(sub 1-x)Ge(sub x) heteroepitaxial growth systems. Although good quality growth of GaN on SiC substrates has been demonstrated, Al(sub x)Ga(sub 1-x)N/SiC multilayer structures have never been grown and the interfacial structure is unknown.

GaN AlN GaN/AlN↗

DOE OSTI2020

Soil microbial EPS resiliency is influenced by carbon source accessibility

The adaptability of soil microbial communities to prolonged periods of drought is influenced by their ability to produce extracellular polymeric substances (EPS) with sufficient water retention properties. Microbial EPSs as water reservoirs during drought have been extensively investigated, but it remains unknown how carbon substrate accessibility to soil microbial communities will affect the chemical properties of the EPS they generate, and whether this in turn will alter their water retention ability. In this work, we observed that the accessibility of carbon substrates influenced microbial community structure and, consequently, the chemical properties of EPS produced by the microbial communities. Further, our results demonstrated that an insoluble carbon substrate (i.e., chitin), stimulated microbial communities to produce EPS with better water retention properties in comparison to a soluble carbon substrate (i.e., N-acetylglucosamine; NAG). In all, this study demonstrates the importance of carbon substrate accessibility by soil microorganisms in regulating the community structure and consequently, the EPS carbon chemistry, which in turn can greatly influence the adaptability of soil microbial communities to drought.

54 ENVIRONMENTAL SCIENCES↗

NASA NTRS1992

A high sensitivity real-time NVR monitor

The use of a temperature-controlled 200-MHz SAW resonator piezoelectric mass microbalance to monitor the mass of nonvolatile residue (NVR) deposited on its surface in real time is reported. The fundamental frequency of this device is mainly dependent on the configuration of the transducers and not on the thickness of the substrate. Therefore, higher operating frequencies can be achieved without reducing the thickness of the crystal. The real-time instrument was integrated onto a conventional stainless steel NVR plate and operated flawlessly over a 14-d period at Kennedy Space Center and successfully measured less than 1 ng/sq cm d NVR contamination. Contamination episodes detected by the instrument were correlated with scheduled activities on the test stand. Under the assumption of a baseline noise level of +/- 2 Hz, the absolute mass lower limit of detection would be 0.065 ng/sq cm. This would enable the detection of a daily NVR deposition rate of less than 0.1 ng/sq cm d.

Bowers, William D.↗

NASA NTRS1990

Narrow bandgap semiconducting silicides: Intrinsic infrared detectors on a silicon chip

Work done during the final report period is presented. The main technical objective was to achieve epitaxial growth on silicon of two semiconducting silicides, ReSi2 and CrSi2. ReSi2 thin films were grown on (001) silicon wafers by vacuum evaporation of rhenium onto hot substrates in ultrahigh vacuum. The preferred epitaxial relationship was found to be ReSi2(100)/Si(001) with ReSi2(010) parallel to Si(110). The lattice matching consists of a common unit mesh of 120 A(sup 2) area, and a mismatch of 1.8 percent. Transmission electron microscopy revealed the existence of rotation twins corresponding to two distinct but equivalent azimuthal orientations of the common unit mesh. MeV He(+) backscattering spectrometry revealed a minimum channeling yield of 2 percent for an approximately 1,500 A thick film grown at 650 C. Although the lateral dimension of the twins is on the order of 100 A, there is a very high degree of alignment between the ReSi2(100) and the Si(001) planes. Highly oriented films of CrSi2 were grown on (111) silicon substrates, with the matching crystallographic faces being CrSi2(001)/Si(111). The reflection high-energy electron diffraction (RHEED) patterns of the films consist of sharp streaks, symmetrically arranged. The predominant azimuthal orientation of the films was determined to be CrSi2(210) parallel to Si(110). This highly desirable heteroepitaxial relationship has been obtained previously by others; it may be described with a common unit mesh of 51 A(sup 2) and mismatch of 0.3 percent. RHEED also revealed the presence of limited film regions of a competing azimuthal orientation, CrSi2(110) parallel to Si(110). A channeling effect for MeV He(+) ions was not found for this material. Potential commercial applications of this research may be found in silicon-integrated infrared detector arrays. Optical characterizations showed that semiconducting ReSi2 is a strong absorber of infrared radiation, with the adsorption constant increasing above 2 x 10(exp 4) cm(sup -1) for photon energies above 0.2 eV. CrSi2 is of potential utility for detection at photon energies above approximately 0.3 eV.

Mahan, John E.↗

DOE OSTI2023

Helfrich-Hurault elastic instabilities driven by geometrical frustration

Here, the Helfrich-Hurault (HH) elastic instability is a well-known mechanism behind patterns that form as a result of strain upon liquid crystal systems with periodic ground states. In the HH model, layered structures undulate and buckle in response to local, geometric incompatibilities in order to maintain the preferred layer spacing. Classic HH systems include cholesteric liquid crystals under electromagnetic field distortions and smectic liquid crystals under mechanical strains, where both materials are confined between rigid substrates. However, richer phenomena are observed when undulation instabilities occur in the presence of deformable interfaces and variable boundary conditions. Understanding how the HH instability is affected by deformable surfaces is imperative for applying the instability to a broader range of materials. In this review, the HH mechanism is reexamined and special focus is given to how the boundary conditions influence the response of lamellar systems to geometrical frustration. Lamellar liquid crystals confined within a spherical shell geometry are used as the model system. Made possible by the relatively recent advances in microfluidics within the past 15 years, liquid crystal shells are composed entirely of fluid interfaces and have boundary conditions that can be dynamically controlled at will. Past and recent work that exemplifies how topological constraints, molecular anchoring conditions, and boundary curvature can trigger the HH mechanism in liquid crystals with periodic ground states is examined. The review ends by identifying similar phenomena across a wide variety of materials, both biological and synthetic. The fact that the HH mechanism is a generic and often overlooked response of periodic materials to geometrical frustration is highlighted.

42 ENGINEERING↗

DOE OSTI2025

Realization of Non‐Equilibrium Wurtzite Structure in Heterovalent Ternary MgSiN 2 Film Grown by Reactive Sputtering

The piezoelectric and ferroelectric applications of heterovalent ternary materials are not well explored. Epitaxial MgSiN 2 films are grown at 600 °C on (111)Pt//(001)Al 2 O 3 substrates by the reactive sputtering method using metallic Mg and Si under the N 2 atmosphere. Detailed X-ray diffraction measurements and transmission electron microscopy observations revealed that the epitaxially grown films on the substrates have a hexagonal wurtzite structure with c-axis out-of-plane orientation. The random occupation of this structure by Mg and Si differs from that of the previously reported structure in which these two cations periodically occupy the cationic sites. However, the lattice spacings closely approximate those that are previously reported, irrespective of the ordering, and they are almost comparable with those of (Al 0.8 Sc 0.2 )N. The wide bandgap of >5.0 eV in deposited MgSiN 2 is compatible with that of AlN and suggests durability against the application of strong external electric fields, possibly to induce polarization switching. In addition, MgSiN 2 is shown to have piezoelectric properties with an effective d 33 value of 2.3 pm V −1 for the first time. This work demonstrates the compositional expansion of hexagonal wurtzite to heterovalent ternary nitrides for novel piezoelectric materials, whose ferroelectricity is expected.

36 MATERIALS SCIENCE↗

NASA NTRS1992

Millimeter-wave and terahertz integrated circuit antennas

This paper presents a comprehensive review of integrated circuit antennas suitable for millimeter and terahertz applications. A great deal of research was done on integrated circuit antennas in the last decade and many of the problems associated with electrically thick dielectric substrates, such as substrate modes and poor radiation patterns, have been understood and solved. Several new antennas, such as the integrated horn antenna, the dielectric-filled parabola, the Fresnel plate antenna, the dual-slot antenna, and the log-periodic and spiral antennas on extended hemispherical lenses, have resulted in excellent performance at millimeter-wave frequencies, and are covered in detail in this paper. Also, a review of the efficiency definitions used with planar antennas is given in detail in the appendix.

Rebeiz, Gabriel M.↗

NASA NTRS1992

Image quality, space-qualified UV interference filters

The progress during the contract period is described. The project involved fabrication of image quality, space-qualified bandpass filters in the 200-350 nm spectral region. Ion-assisted deposition (IAD) was applied to produce stable, reasonably durable filter coatings on space compatible UV substrates. Thin film materials and UV transmitting substrates were tested for resistance to simulated space effects.

Mooney, Thomas A.↗

DOE OSTI2025

Birefringent Glass‐Engraved Quasi‐Linear Nanograting Metasurface Based on Self‐Organizing Process for Large Aperture High Power Laser Applications

All-glass metasurface “nanograting” structures that exhibit birefringence in the formed layer are reported. The key enabler of this work is ion beam processing at an angle sufficiently off-normal incidence, inducing self-assembly of a deposited metal layer into quasi-linear metallic features that can function as an etching mask. As a result, a fused silica metasurface, monolithic to the underlying substrate, is demonstrated at 375 nm wavelength to exhibit a phase delay angle of 30° between the principal axes. The capability of an angled etch mask replenishment process is also demonstrated for achieving deeper etch depth and for increasing the grating period, another first – to the best of the knowledge. This is the first display of a technology capable of fabricating glass-engraved near-linear grating structure with a feature-to-feature period as small as 118.6 nm. Furthermore, this technology has the potential to generate grating-like structures with periods as small as 12.4 nm, as demonstrated here with reactive ion beam processing assisted mask assembly. Furthermore, these structures are shown to have reflectivity < 0.4% across the wavelength band 350 nm – 1000 nm. Such a technology can enable laser-durable grating structures for the deep-UV and even down to soft X-ray wavelengths.

Ray, Nathan J. [Lawrence Livermore National Labora↗

DOE OSTI2020

Fundamentals of Au(111) Surface Dynamics: Coarsening of Two-Dimensional Au Islands

Au(111) surfaces play a central role in many applications, yet studies of fundamental aspects of their dynamics are limited. Thus, using scanning tunneling microscopy (STM) at 300 K, we analyze the coarsening of first-layer 2D Au islands directly on the Au(111) substrate and also of second-layer 2D Au islands. Specifically, we monitor the decay of Au first-layer islands with areas of about 100–500 nm 2 in the vicinity of larger islands or extended step edges over a period of approximately 40 h, the relevant time scale for this process. Experimentally observed behavior is captured by analytical theory for terrace-diffusion-limited decay incorporating DFT results for the Au terrace diffusion barrier and the adatom formation energy.Lastly, experimental observations of second-layer island decay are also compared with appropriate analytical theory and stochastic simulations, thereby determining the effective Ehrlich–Schwoebel barrier for Au on Au(111).

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2022

Analysis of First-Order Gratings in Silicon Photonic Waveguides

A simple thin film effective index analysis for first order gratings in Si photonic waveguides is shown to provide highly accurate results for reflected and transmitted power spectrums as long as the waveguide remains single mode and non-radiating. A cover layer can be added to the grating region of a Si photonic waveguide to increase the strength of the grating, modify transition losses from the input waveguide to the grating waveguide region, and/or modify the width of the reflectivity spectrum. For a given grating period, the peak reflection and spectral width of the reflectivity decrease as the duty cycle is decreased or increased from ~50%. For both radiating and multimode structures, the coupling between all modes, power radiated towards the superstrate (upwards), power radiated downwards (substrate) and transmitted power analyzed by Floquet-Bloch, Eigenmode Expansion and Finite Difference Time Domain methods show excellent agreement. Coupling coefficients calculated using analytic formulas are shown to be accurate only for shallow grating depths.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

NASA NTRS1992

The temperature dependent variation of bulk and surface composition of In(x)Ga(1-x)As on GaAs grown by chemical beam epitaxy studied by RHEED, X-ray diffraction and XPS

The paper investigates the bulk as well as near-surface composition of In(x)Ga(1-x)As epilayers on GaAs grown by chemical beam epitaxy (CBE) as a function of triethylindium flow rate and substrate temperature by reflection high energy electron diffraction (RHEED), X-ray diffraction, and XPS. To clarify whether the bulk stoichiometry of CBE-grown ternaries can be extracted from the growth rate change as determined by the change in the period of RHEED oscillations from binary to ternary compound growth, a systematic study of growth rate change as a function of ternary bulk composition determined by X-ray diffraction was performed at various temperatures. It is shown that for low growth temperatures there is a linear relationship between the two methods of determination, whereas no correlation is found for higher growth temperatures, in contrast to the MBE case where the two methods of determination yield identical results. In the near surface region the epilayer composition is determined in situ by XPS.

Hansen, H. S.↗

NASA NTRS1999

[The growth movements of moss protonemata under clinostatic and microgravity conditions]

Populations of dark-grown protonemata of moss Ceratodon purpureus wt-4 (Germany) and wt-U (Ukraine) were rotated on clinostat or flown in space (experiment "Protonema" aboard Bion-11, December 24, 1996-January 7, 1997) to determine the effects of altered gravity on orientation of protonemata growing filaments. Protonemata had been cultivated 8 days in vertical stationary position at dark to be transported to microgravity or placed in clinostat for the period of 14 days. In the ground control, protonemata demonstrated the negatively gravitropic growth (straight upwards in a bundle of compact filaments). The horizontal or circular rotation in clinostat and exposure to microgravity made filaments grow every each way within the substrate plane but with an apparent trend to rightward curling resulting in "spiral galaxies".

NASA Discipline Plant Biology↗

NASA NTRS2015

Evaluation of Two Ionic Liquid-Based Epoxies from the MISSE-8 (Materials International Space Station Experiment-8) Sample Carrier

Two sets of epoxy mixtures, both containing the same ionic liquid (IL) based resin but utilizing two different curing agents, were evaluated after spending more than two years of continual space exposure outside of the International Space Station on the MISSE-8 sample rack. During this period the samples, positioned on nadir side, also experienced some 12,500 thermal cycles between approximately -40C and +40 C. Initial examination showed some color change, a miniscule weight variance, and no cracks or de-bonding from the sample substrate. Microscopic examination of the surface reveled some slight deformities and pitting. These observations, and others, are discussed in view of the ground-based control samples. Finally, the impetus of this study in terms of space applications is presented.

Rabenberg, Ellen↗

NASA NTRS1982

Acurex Parabolic Dish Concentrator (PDC-2)

The design approach, rationale for the selected configuration, and the development status of a cost effective point-focus solar concentrator are discussed. The low-cost concentrator reflective surface design is based on the use of a thin, backsilvered mirror glass reflector bonded to a molded structural plastic substrate. The foundation, support, and drive subassembles are described. A hybrid, two-axis, Sun tracking control system based on microprocessor technology was selected. Coarse synthetic tracking is achieved through a microcomputer-based control system to calculate Sun position for transient periods of cloud cover as well as sundown and sunrise positioning. Accurate active tracking is achieved by two-axis optical sensors. Results of the reflective panel demonstration tests investigating slope error, hail impact survivability, temperature/humidity cycling, longitudinal strength/bending stiffness, and torsional stiffness are discussed.

Overly, P.↗