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At least 217 records · Page 12

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NASA NTRS1987

Photon counting image sensor development for astronomical applications

Specially built intensified CCD (ICCD) detector tubes were purchased and the performance of the electron bombardment process was investigated. In addition to studying the signal characteristics of the photoevents, there was interest in demonstrating that back-illuminated chips were not susceptible to radiation damage to their clocking electrodes. How to perform a centroid analysis for a 2-dimensional Gaussian distribution of charge is described. Measurement of the projection (along columns or rows) of the average charge spread profile is discussed. The development and flight of the Interstellar Medium Absorption Profile Spectrograph (IMAPS) is discussed.

Jenkins, Edward B.↗

DOE OSTI2024

Phase-resolving spin-wave microscopy using infrared strobe light

The need for sensitively and reliably probing magnetization dynamics has been increasing in various contexts such as studying novel hybrid magnonic systems, in which the spin dynamics strongly and coherently couple to other excitations, including microwave photons, light photons, or phonons. Recent advances in quantum magnonics also highlight the need for employing the magnon phase as quantum state variable, which is to be detected and mapped out with high precision in on-chip micro- and nanoscale magnonic devices. Here, in this study, we demonstrate a facile optical technique that can directly perform concurrent spectroscopic and imaging functionalities with spatial and phase resolutions, using infrared strobe light operating at 1550-nm wavelength. To showcase the methodology, we spectroscopically studied the phaseresolved spin dynamics in a bilayer of Permalloy and yttrium iron garnet Y 3 Fe 5 O 12 (YIG), and spatially imaged the backward-volume spin-wave modes of YIG in the dipolar spin-wave regime. Using the strobe light probe, the detected precessional phase contrast can be directly used to construct the map of the spin wave's wave front, in the continuous-wave regime of spin-wave propagation and in the stationary state, without needing any optical reference path. By selecting the applied field, frequency, and detection phase, the spin-wave images can be made sensitive to the precession amplitude and phase. Our results demonstrate that infrared optical strobe light can serve as a versatile platform for magneto-optical probing of magnetization dynamics, with potential implications in investigating hybrid magnonic systems.

Xiong, Yuzan [University of North Carolina, Chapel↗

DOE OSTI2026

Evaluation for QFlex Beta Run

The following report consists of measurements on passive and active photonic components fabricated by AIM Photonics as part of their QFlex platform, which at the time of fabrication was in its beta form (version 0.6). This report is broken down into electrical and optical testing that was done on the chips.

97 MATHEMATICS AND COMPUTING↗

DOE OSTI2026

Er Al :Al 2 ⁢O 3 for telecom-band photonics: Electronic structure and optical properties

Er-doped Al 2 ⁢O 3 is a promising host for telecom-band integrated photonics. Here, in this study, we combine ab initio calculations with a symmetry-resolved analysis to elucidate substitutional Er on the Al site (Er Al ) in 𝛼−Al 2 ⁢O 3 . First-principles relaxations confirm the structural stability of Er Al . We then use the local trigonal crystal-field symmetry to classify the Er-derived impurity levels by irreducible representations and to derive polarization-resolved electric-dipole selection rules, explicitly identifying the symmetry-allowed 𝑓−𝑑 hybridization channels. Kubo-Greenwood absorption spectra computed from Kohn-Sham states quantitatively corroborate these symmetry predictions. Furthermore, we connect the calculated intra-4⁢𝑓 line strengths to Judd-Ofelt theory, clarifying the role of 4⁢𝑓−5⁢𝑑 admixture in enabling optical activity. Notably, we predict a characteristic absorption near 1.47 µ⁢m (telecom band), relevant for on-chip amplification and emission. To our knowledge, a symmetry-resolved first-principles treatment of Er:Al 2 ⁢O 3 with an explicit Judd-Ofelt interpretation has not been reported, providing a transferable framework for tailoring rare-earth dopants in wide-band-gap oxides for integrated photonics. Our results for the optical spectra are in good agreement with experimental data. The resulting symmetry-based selection rules translate directly to polarization-dependent coupling in Al 2 ⁢O 3 integrated photonic waveguides and resonators, enabling device-level design of TE/TM-mode interaction with Er emitters in the 1.5-µ⁢m telecom band.

Er-doped Al2O3↗

DOE OSTI2022

Coherent Coupling of Two Remote Magnonic Resonators Mediated by Superconducting Circuits

We demonstrate microwave-mediated distant magnon-magnon coupling on a superconducting circuit platform, incorporating chip-mounted single-crystal Y 3 Fe 5 O 12 (YIG) spheres. Coherent level repulsion and dissipative level attraction between the magnon modes of the two YIG spheres are demonstrated. The former is mediated by cavity photons of a superconducting resonator, and the latter is mediated by propagating photons of a coplanar waveguide. Overall, our results open new avenues toward exploring integrated hybrid magnonic networks for coherent information processing on a quantum-compatible superconducting platform.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2022

Precise electron beam-based target-wavelength trimming for frequency conversion in integrated photonic resonators

We demonstrate post-fabrication target-wavelength trimming with a gallium phosphide on a silicon nitride integrated photonic platform using controlled electron-beam exposure of hydrogen silsesquioxane cladding. A linear relationship between the electron-beam exposure dose and resonant wavelength red-shift enables deterministic, individual trimming of multiple devices on the same chip to within 30 pm of a single target wavelength. Second harmonic generation from telecom to near infrared at a target wavelength is shown in multiple devices with quality factors on the order of 10 4 . Post-fabrication tuning is an essential tool for targeted wavelength applications including quantum frequency conversion.

Thiel, Lillian↗

DOE OSTI2025

3D-printed micro ion trap technology for quantum information applications

Trapped-ion applications, such as in quantum information processing1, precision measurements, optical clocks and mass spectrometry, rely on specialized high-performance ion traps. The last three of these applications typically use traditional machining to customize macroscopic 3D Paul traps, whereas quantum information processing experiments usually rely on photolithographic techniques to miniaturize the traps and meet scalability requirements. Using photolithography, however, it is challenging to fabricate the complex 3D electrode structures required for optimal confinement. Here, in this work, we demonstrate a high-resolution 3D printing technology based on two-photon polymerization (2PP) that is capable of fabricating large arrays of high-performance miniaturized 3D traps. We show that 3D-printed ion traps combine the advantages, such as strong radial confinement, of traditionally machined 3D traps with on-chip miniaturization. We trap calcium ions in 3D-printed ion traps with radial trap frequencies ranging from 2 MHz to 24 MHz. The tight confinement eases ion cooling requirements and allows us to implement high-quality Rabi oscillations with Doppler cooling only. Also, we demonstrate a two-qubit gate with a Bell-state fidelity of 0.978 ± 0.012. With 3D printing technology, the design freedom is greatly expanded without sacrificing scalability and precision, so that ion trap geometries can be optimized for higher performance and better functionality.

quantum information↗

DOE OSTI2025

Multiplexed color centers in a silicon photonic cavity array

Entanglement distribution is central to the modular scaling of quantum processors and establishing quantum networks. Color centers with telecom-band transitions and long spin coherence times are suitable candidates for long-distance entanglement distribution. However, high-bandwidth memory-enhanced quantum communication is limited by high-yield, scalable creation of efficient spin-photon interfaces. Here, we develop a silicon photonics platform consisting of arrays of bus-coupled cavities. The coupling to a common bus waveguide enables simultaneous access to individually addressable cavity-enhanced T center arrays. We demonstrate frequency-multiplexed operation of two T centers in separate photonic crystal cavities. In addition, we investigate the cavity enhancement of a T center through hybridized modes formed between physically distant cavities. Our results show that bus-coupled arrays of cavity-enhanced color centers could enable efficient on-chip and long-distance entanglement distribution.

Komza, Lukasz↗

DOE OSTI2024

Scalable Nanoimprint Manufacturing of Functional Multilayer Metasurface Devices

Optical metasurfaces, consisting of subwavelength-scale meta-atom arrays, hold great promise of overcoming the fundamental limitations of conventional optics. Due to their structural complexity, metasurfaces usually require high-resolution yet slow and expensive fabrication processes. Here, using a metasurface polarimetric imaging device as an example, the photonic structures and the Nanoimprint lithography (NIL) processes are designed, creating two separate NIL molds over a patterning area of > 20 mm2 with designed Moiré alignment markers by electron-beam writing, and further subsequently integrate silicon and aluminum metasurface structures on a chip. Uniquely, the silicon and aluminum metasurfaces are fabricated by using the nanolithography and 3D pattern-transfer capabilities of NIL, respectively, achieving nanometer-scale linewidth uniformity, sub-200 nm translational overlay accuracy, and <0.017 rotational alignment error while significantly reducing fabrication complexity and surface roughness. Here, the micro-sized multilayer metasurfaces have high circular polarization extinction ratios as large as ≈20 and ≈80 in blue and red wavelengths. Further, the metasurface chip-integrated CMOS imager demonstrates high accuracy in broad-band, full Stokes parameter analysis in the visible wavelength ranges and single-shot polarimetric imaging. This novel, NIL-based, multilayered nanomanufacturing approach is applicable to the scalable production of large-area functional structures for ultra-compact optic, electronic, and quantum devices.

36 MATERIALS SCIENCE↗

NASA NTRSDate not supplied

Developing a New Generation of Integrated Micro-Spec Far Infrared Spectrometers for the EXperiment for Cryogenic Large-Aperture Intensity Mapping (EXCLAIM)

The current state of far-infrared astronomy drives the need to develop compact, sensitive spectrometers for future space and ground-based instruments. Here we present details of the µ-Spec spectrometers currently in development for the far-infrared balloon mission EXCLAIM. The spectrometers are designed to cover the 555 – 714 µm range with a resolution of R = λ/∆λ = 512 at the 638 µm band center. The spectrometer design incorporates a Rowland grating spectrometer implemented in a parallel plate waveguide on a low-loss single-crystal Si chip, employing Nb microstrip planar transmission lines and thin-film Al kinetic inductance detectors (KIDs). The EXCLAIM µ-Spec design is an advancement upon a successful R = 64 µ-Spec prototype, and can be considered a sub-mm superconducting photonic integrated circuit (PIC) that combines spectral dispersion and detection. The design operates in a single M=2 grating order, allowing one spectrometer to cover the full EXCLAIM band without requiring a multi-order focal plane. The EXCLAIM instrument will fly six spectrometers, which are fabricated on a single 150 mm diameter Si wafer. Fabrication involves a flip-wafer-bonding process with patterning of the superconducting layers on both sides of the Si dielectric. The spectrometers are designed to operate at 100 mK, and will include 355 Al KID detectors targeting a goal of NEP ∼8 × 10−19 W/√( Hz). We summarize the design, fabrication, and ongoing development of these µ-Spec spectrometers for EXCLAIM.

Carolyn G. Volpert↗

DOE OSTI2023

Time-Resolved Hanbury Brown–Twiss Interferometry of On-Chip Biphoton Frequency Combs Using Vernier Phase Modulation

Biphoton frequency combs (BFCs) are promising quantum sources for large-scale and high-dimensional quantum information and networking systems. In this context, the spectral purity of individual frequency bins will be critical for realizing quantum networking protocols like teleportation and entanglement swapping. Measurement of the temporal autocorrelation function of the unheralded signal or idler photons comprising the BFC is a key tool for characterizing their spectral purity and in turn verifying the utility of the biphoton state for networking protocols. Yet the experimentally obtainable precision for measuring BFC correlation functions is often severely limited by detector jitter. The fine temporal features in the correlation function—not only of practical value in quantum information, but also of fundamental interest in the study of quantum optics—are lost as a result. We propose a scheme to circumvent this challenge through electro-optic phase modulation, experimentally demonstrating time-resolved Hanbury Brown–Twiss characterization of BFCs generated from an integrated 40.5-GHz Si 3 N 4 microring, up to a 3×3-dimensional two-qutrit Hilbert space. Through slight detuning of the electro-optic drive frequency from the comb’s free spectral range, our approach leverages Vernier principles to magnify temporal features, which would otherwise be averaged out by detector jitter. We demonstrate our approach under both continuous-wave and pulsed-pumping regimes, finding excellent agreement with theory. In conclusion, our method reveals not only the collective statistics of the contributing frequency bins but also their temporal shapes—features lost in standard fully integrated autocorrelation measurements.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2022

Ultra-broadband quadrature squeezing with thin-film lithium niobate nanophotonics

Squeezed light is a key quantum resource that enables quantum advantages for sensing, networking, and computing applications. The scalable generation and manipulation of squeezed light with integrated platforms are highly desired for the development of quantum technology with continuous variables. In this Letter, we demonstrate squeezed light generation with thin-film lithium niobate integrated photonics. Parametric down-conversion is realized with quasi-phase matching using ferroelectric domain engineering. With sub-wavelength mode confinement, efficient nonlinear processes can be observed with single-pass configuration. We measure 0.56 ± 0.09 dB quadrature squeezing (∼2.6 dB inferred on-chip). The single-pass configuration further enables the generation of squeezed light with large spectral bandwidth up to 7 THz. This work represents a significant step towards the on-chip implementation of continuous-variable quantum information processing.

Chen, Pao-Kang↗

DOE OSTI2022

Simple coplanar waveguide resonator mask targeting metal-substrate interface

This white paper presents a single-layer mask, found at https://github.com/Boulder-Cryogenic-Quantum-Testbed/simple-resonator-mask. It is designed for fabrication of superconducting microwave resonators towards 1:1 comparisons of dielectric losses from the metal-substrate interface. Finite-element electromagnetic simulations are used to determine participation ratios of the four major regions of the on-chip devices, as well as to confirm lack of crosstalk between neighboring devices and demonstrate coupling tunability over three orders of magnitude. This mask is intended as an open-source community resource for facilitating precise and accurate comparisons of materials in the single-photon, millikelvin regime.

Kopas, Cameron J.↗

NASA NTRS2000

RF Single Electron Transistor Readout Amplifiers for Superconducting Astronomical Detectors for X-Ray to Sub-mm Wavelengths

We report progress on using a new type of amplifier, the Radio-Frequency Single-Electron Transistor (RF-SET), to develop multi-channel sensor readout systems for fast and sensitive readout of high impedance cryogenic photodetectors such as Superconducting Tunnel Junctions and Single Quasiparticle Photon Counters. Although cryogenic, these detectors are desirable because of capabilities not other-wise attainable. However, high impedances and low output levels make low-noise, high-speed readouts challenging, and large format arrays would be facilitated by compact, low-power, on-chip integrated amplifiers. Well-suited for this application are RF-SETs, very high performance electrometers which use an rf readout technique to provide 100 MHz bandwidth. Small size, low power, and cryogenic operation allow direct integration with detectors, and using multiple rf carrier frequencies permits simultaneous readout of 20-50 amplifiers with a common electrical connection. We describe both the first 2-channel demonstration of this wavelength division multiplexing technique for RF-SETs, and Charge-Locked-Loop operation with 100 kHz of closed-loop bandwidth.

Stevenson, Thomas↗

DOE OSTI2024

Fault localization in a microfabricated surface ion trap using diamond nitrogen-vacancy center magnetometry

Here, as quantum computing hardware becomes more complex with ongoing design innovations and growing capabilities, the quantum computing community needs increasingly powerful techniques for fabrication failure root-cause analysis. This is especially true for trapped-ion quantum computing. As trapped-ion quantum computing aims to scale to thousands of ions, the electrode numbers are growing to several hundred, with likely integrated photonic components also adding to the electrical and fabrication complexity, making faults even harder to locate. In this work, we used a high-resolution quantum magnetic imaging technique, based on nitrogen-vacancy centers in diamond, to investigate short-circuit faults in an ion trap chip. We imaged currents from these short-circuit faults to ground and compared them to intentionally created faults, finding that the root cause of the faults was failures in the on-chip trench capacitors. This work, where we exploited the performance advantages of a quantum magnetic sensing technique to troubleshoot a piece of quantum computing hardware, is a unique example of the evolving synergy between emerging quantum technologies to achieve capabilities that were previously inaccessible.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2025

Anisotropic surface potentials induced by competitive ion adsorption enable the synthesis of branched cubic Pt mesocrystals

Creation of complex nanostructured materials through oriented attachment (OA) requires the manipulation of interparticle forces, including electrostatic repulsion, which depends strongly on surface potentials and can be modified through the effect of solution environment on interfacial chemistry. Here we show that time-dependent anisotropies in surface potential driven by competitive ion adsorption can alter facet-selectivity during OA. This phenomenon enables the synthesis of branched cubic Pt mesocrystals. Initially, Pt nanoparticles attach preferentially at their {100} facets to form a well-defined cubic core. Over time, changes in ion adsorption shift the attachment preference to the {111} facets, promoting branch formation. In both stages, anisotropic surface potentials generate electrostatic torques that align the particles prior to attachment. These findings demonstrate a generalizable strategy for directing the architecture of nanomaterials through time-resolved control of interfacial chemistry during OA, offering new pathways for the design of complex mesoscale structures.

Bae, Yuna [Pacific Northwest National Laboratory (↗

NASA NTRS1992

Evaluation of light emitting diode characteristics for a space-based plant irradiation source

Light emitting diodes (LEDs) are a promising irradiation source for plant growth in space. Improved semiconductor technology has yielded LED devices fabricated with gallium aluminum arsenide (GaAlAs) chips which have a high efficiency for converting electrical energy to photosynthetically active radiation. Specific GaAlAs LEDs are available that emit radiation with a peak wavelength near the spectral peak of maximum quantum action for photosynthesis. The electrical conversion efficiency of installed systems (μmol s -1 of photosynthetic photons per watt) of high output LEDs can be within 10% of that for high pressure sodium lamps. Output of individual LEDs were found to vary by as much as 55 % from the average of the lot. LED ratings, in mcd (luminous intensity per solid angle), were found to be proportional to total photon output only for devices with the same dispersion angle and spectral peak. Increasing current through the LED increased output but also increased temperature with a consequent decrease in electrical conversion efficiency. A photosynthetic photon flux as high as 900 μmol m -2 s -1 has been produced on surfaces using arrays with LEDs mounted 7.6 mm apart, operating at a current of 50 mA device -1 and at an installed density of approximately 17,200 lamps m -2 of irradiated area. Advantages of LEDs over other electric light sources for use in space systems include long life, minimal mass and volume and being a solid state device.

D J Barta↗

DOE OSTI2020

Physics and applications of quantum dot lasers for silicon photonics

Abstract Photonic integrated circuits (PICs) have enabled numerous high performance, energy efficient, and compact technologies for optical communications, sensing, and metrology. One of the biggest challenges in scaling PICs comes from the parasitic reflections that feed light back into the laser source. These reflections increase noise and may cause laser destabilization. To avoid parasitic reflections, expensive and bulky optical isolators have been placed between the laser and the rest of the PIC leading to large increases in device footprint for on-chip integration schemes and significant increases in packaging complexity and cost for lasers co-packaged with passive PICs. This review article reports new findings on epitaxial quantum dot lasers on silicon and studies both theoretically and experimentally the connection between the material properties and the ultra-low reflection sensitivity that is achieved. Our results show that such quantum dot lasers on silicon exhibit much lower linewidth enhancement factors than any quantum well lasers. Together with the large damping factor, we show that the quantum dot gain medium is fundamentally dependent on dot uniformity, but through careful optimization, even epitaxial lasers on silicon can operate without an optical isolator, which is of paramount importance for the future high-speed silicon photonic systems.

36 MATERIALS SCIENCE↗