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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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206 records · Page 12
All sourcesNASA NTRSDOE OSTI
NASA NTRS2004

Fabrication of Robust, Flat, Thinned, UV-Imaging CCDs

An improved process that includes a high-temperature bonding subprocess has been developed to enable the fabrication of robust, flat, silicon-based charge-coupled devices (CCDs) for imaging in ultraviolet (UV) light and/or for detecting low-energy charged particles. The CCDs in question are devices on which CCD circuitry has already been formed and have been thinned for backsurface illumination. These CCDs may be delta doped, and aspects of this type of CCD have been described in several prior articles in NASA Tech Briefs. Unlike prior low-temperature bonding subprocesses based on the use of epoxies or waxes, the high-temperature bonding subprocess is compatible with the deltadoping process as well as with other CCD-fabrication processes. The present improved process and its bonding, thinning, and delta-doping subprocesses, are characterized as postfabrication processes because they are undertaken after the fabrication of CCD circuitry on the front side of a full-thickness silicon substrate. In a typical case, it is necessary to reduce the thickness of the CCD to between 10 and 20 m in order to take advantage of back-side illumination and in order to perform delta doping and/or other back-side treatment to enhance the quantum efficiency. In the prior approach to the fabrication of back-side-illuminated CCDs, the thinning subprocess turned each CCD into a free-standing membrane that was fragile and tended to become wrinkled. In the present improved process, prior to thinning and delta doping, a CCD is bonded on its front side to a silicon substrate that has been prefabricated to include cutouts to accommodate subsequent electrical connections to bonding pads on the CCD circuitry. The substrate provides structural support to increase ruggedness and maintain flatness. At the beginning of this process, the back side of a CCD as fabricated on a full-thickness substrate is polished. Silicon nitride is deposited on the back side, opposite the bonding pads on the front side, in order to define a relatively thick frame. The portion of the CCD not covered by the frame is the portion to be thinned by etching.

Grunthaner, Paula↗
NASA NTRS2007

Development of a Quantum Dot, 0.6 eV InGaAs Thermophotovoltaic (TPV) Converter

Thermophotovoltaic (TPV) power conversion has to date demonstrated conversion efficiencies exceeding 20% when coupled to a heat source. Current III-V semiconductor TPV technology makes use of planar devices with bandgaps tailored to the heat source. The efficiency can be improved further by increasing the collection efficiency through the incorporation of InAs quantum dots. The use of these dots can provide sub-gap absorption and thus improve the cell short circuit current without the normal increase in dark current associated with lowering the bandgap. We have developed self-assembled InAs quantum dots using the Stranski-Krastanov growth mode on 0.74 eV In0.53GaAs lattice-matched to InP and also on lattice-mismatched 0.6 eV In0.69GaAs grown on InP through the use of a compositionally graded InPAsx buffer structure, by metalorganic vapor phase epitaxy (MOVPE). Atomic force microscopy (AFM) measurements showed that the most reproducible dot pattern was obtained with 5 monolayers of InAs grown at 450 C. The lattice mismatch between InAs and In0.69GaAs is only 2.1%, compared to 3.2% between InAs and In0.53GaAs. The smaller mismatch results in lower strain, making dot formation somewhat more complicated, resulting in quantum dashes, rather than well defined quantum dots in the lattice-mismatched case. We have fabricated 0.6 eV InGaAs planer TPV cells with and without the quantum dashes

Forbes, David↗
NASA NTRS2004

Growing High-Quality InAs Quantum Dots for Infrared Lasers

An improved method of growing high-quality InAs quantum dots embedded in lattice-matched InGaAs quantum wells on InP substrates has been developed. InAs/InGaAs/InP quantum dot semiconductor lasers fabricated by this method are capable of operating at room temperature at wavelengths greater than or equal to 1.8 mm. Previously, InAs quantum dot lasers based on InP substrates have been reported only at low temperature of 77 K at a wavelength of 1.9 micrometers. In the present method, as in the prior method, one utilizes metalorganic vapor phase epitaxy to grow the aforementioned semiconductor structures. The development of the present method was prompted in part by the observation that when InAs quantum dots are deposited on an InGaAs layer, some of the InAs in the InGaAs layer becomes segregated from the layer and contributes to the formation of the InAs quantum dots. As a result, the quantum dots become highly nonuniform; some even exceed a critical thickness, beyond which they relax. In the present method, one covers the InGaAs layer with a thin layer of GaAs before depositing the InAs quantum dots. The purpose and effect of this thin GaAs layer is to suppress the segregation of InAs from the InGaAs layer, thereby enabling the InAs quantum dots to become nearly uniform (see figure). Devices fabricated by this method have shown near-room-temperature performance.

Qiu, Yueming↗
NASA NTRS1995

Investigation of the basic physics of high efficiency semiconductor hot carrier solar cell

The main purpose of this research program is to investigate potential semiconductor materials and their multi-band-gap MQW (multiple quantum wells) structures for high efficiency solar cells for aerospace and commercial applications. The absorption and PL (photoluminescence) spectra, the carrier dynamics, and band structures have been investigated for semiconductors of InP, GaP, GaInP, and InGaAsP/InP MQW structures, and for semiconductors of GaAs and AlGaAs by previous measurements. The barrier potential design criteria for achieving maximum energy conversion efficiency, and the resonant tunneling time as a function of barrier width in high efficiency MQW solar cell structures have also been investigated in the first two years. Based on previous carrier dynamics measurements and the time-dependent short circuit current density calculations, an InAs/InGaAs - InGaAs/GaAs - GaAs/AlGaAs MQW solar cell structure with 15 bandgaps has been designed. The absorption and PL spectra in InGaAsP/InP bulk and MQW structures were measured at room temperature and 77 K with different pump wavelength and intensity, to search for resonant states that may affect the solar cell activities. Time-resolved IR absorption for InGaAsP/InP bulk and MQW structures has been measured by femtosecond visible-pump and IR-probe absorption spectroscopy. This, with the absorption and PL measurements, will be helpful to understand the basic physics and device performance in multi-bandgap InAs/InGaAs - InGaAs/InP - InP/InGaP MQW solar cells. In particular, the lifetime of the photoexcited hot electrons is an important parameter for the device operation of InGaAsP/InP MQW solar cells working in the resonant tunneling conditions. Lastly, time evolution of the hot electron relaxation in GaAs has been measured in the temperature range of 4 K through 288 K using femtosecond pump-IR-probe absorption technique. The temperature dependence of the hot electron relaxation time in the X valley has been measured.

Alfano, R. R.↗
NASA NTRS2007

An Extremely Low Power Quantum Optical Communication Link for Autonomous Robotic Explorers

One concept for planetary exploration involves using many small robotic landers that can cover more ground than a single conventional lander. In addressing this vision, NASA has been challenged in the National Nanotechnology Initiative to research the development of miniature robots built from nano-sized components. These robots have very significant challenges, such as mobility and communication, given the small size and limited power generation capability. The research presented here has been focused on developing a communications system that has the potential for providing ultra-low power communications for robots such as these. In this paper an optical communications technique that is based on transmitting recognizable sets of photons is presented. Previously pairs of photons that have an entangled quantum state have been shown to be recognizable in ambient light. The main drawback to utilizing entangled photons is that they can only be generated through a very energy inefficient nonlinear process. In this paper a new technique that generates sets of photons from pulsed sources is described and an experimental system demonstrating this technique is presented. This technique of generating photon sets from pulsed sources has the distinct advantage in that it is much more flexible and energy efficient, and is well suited to take advantage of the very high energy efficiencies that are possible when using nano scale sources. For these reasons the communication system presented in this paper is well suited for use in very small, low power landers and rovers. In this paper a very low power optical communications system for miniature robots, as small as 1 cu cm is addressed. The communication system is a variant of photon counting communications. Instead of counting individual photons the system only counts the arrival of time coincident sets of photons. Using sets of photons significantly decreases the bit error rate because they are highly identifiable in the presence of ambient light. An experiment demonstrating reliable communication over a distance of 70 meters using less than a billionth of a watt of radiated power is presented. The components used in this system were chosen so that they could in the future be integrated into a cubic centimeter device.

Lekki, John↗
NASA NTRS2001

A Hydrodynamic Theory for Spatially Inhomogeneous Semiconductor Lasers: Numerical Results - 2

We present numerical results of the diffusion coefficients (DCs) in the coupled diffusion model derived in the preceding paper for a semiconductor quantum well. These include self and mutual DCs in the general two-component case, as well as density- and temperature-related DCs under the single-component approximation. The results are analyzed from the viewpoint of free Fermi gas theory with many-body effects incorporated. We discuss in detail the dependence of these DCs on densities and temperatures in order to identify different roles played by the free carrier contributions including carrier statistics and carrier-LO phonon scattering, and many-body corrections including bandgap renormalization and electron-hole (e-h) scattering. In the general two-component case, it is found that the self- and mutual- diffusion coefficients are determined mainly by the free carrier contributions, but with significant many-body corrections near the critical density. Carrier-LO phonon scattering is dominant at low density, but e-h scattering becomes important in determining their density dependence above the critical electron density. In the single-component case, it is found that many-body effects suppress the density coefficients but enhance the temperature coefficients. The modification is of the order of 10% and reaches a maximum of over 20% for the density coefficients. Overall, temperature elevation enhances the diffusive capability or DCs of carriers linearly, and such an enhancement grows with density. Finally, the complete dataset of various DCs as functions of carrier densities and temperatures provides necessary ingredients for future applications of the model to various spatially inhomogeneous optoelectronic devices.

Li, Jianzhong↗
NASA NTRS2009

Circuits Enhance Scientific Instruments and Safety Devices

Since its founding in 1958, NASA has pioneered the use of different frequencies on the electromagnetic spectrum - including X-ray, microwave, and infrared wavelengths - to gather information about distant celestial bodies. During the 1962 Mariner 2 mission, NASA used microwave radiometers that operated in the range of 15-23 gigahertz (GHz) to assess the surface temperature of Venus and to determine the percentage of water vapor in its atmosphere. Today, there is another area on the spectrum proving uniquely useful to scientists: the terahertz (THz) range, spanning from about 100 GHz-10,000 GHz. (1 THz equals approximately 1,000 GHz.) Terahertz frequencies span the lesser-known gap on the electromagnetic spectrum between microwave radiation and infrared (and visible) light, falling within the spectral range where most simple molecules resonate. This molecular resonance makes terahertz particularly useful for chemical spectroscopy and the remote sensing of specific molecules. In the 1990s, NASA began using frequencies above 300 GHz (more than an order of magnitude higher than the instrumentation on Mariner 2) to perform spectral analysis of molecular clouds and planetary atmospheres. Instruments using these higher frequencies have included the Microwave Limb Sounder (MLS) on the Upper Atmosphere Research Satellite (UARS), deployed from 1991-2001, and the Microwave Instrument for the Rosetta Orbiter (MIRO), launched in 2004. With UARS-MLS, NASA used advanced terahertz receivers to measure the emission signatures from atmospheric molecules, providing researchers with valuable data about the changes in the Earth s protective ozone layer. MIRO, set to rendezvous with the comet 67P Churyumov-Gerasimenko in 2014, will use terahertz instrumentation to analyze the comet s dust and gases. Although NASA has been a driving force behind the development of terahertz technology, scientific equipment for terahertz research - including transmitters, receivers, and basic test and measurement equipment - is not widely available, making scientific experiments in this range between traditional electronics and quantum photonics more costly and greatly limiting commercial development in the field. Given NASA s interest in studying distant bodies in space as well as in improving life on Earth, the Agency has collaborated with private industry to develop terahertz technologies.

Source record↗
NASA NTRSDate not supplied

Some Aeronautical Communications Experiments

Classically there has existed an asymmetry between the computing and communicating sides of aerospace systems. Over the past few decades, this asymmetry has shifted to favoring communication link technologies, meaning that advancements in available central processing units (CPUs), storage devices, and internal data buses have stagnated. Indeed, the increased emphasis placed on refining subsystem performance such as with antenna bandwidth in phased arrays, amplifier power efficiency, software defined radio (SDR) flexibility and encoding for data compression and error correction has given rise to successful debuts of multi-gigabit-per-second data return from long space-link distances. These accomplishments are easily quantifiable through link budgets and illustrate what is possible, but also reveal the deficiencies in overall communications capabilities. In particular, the ever-accelerating presence of aerospace vehicles gives rise to newer and larger classes of challenges to address the needs of 21st century systems. Furthermore remote sensing and imaging capabilities have far outpaced our ability to transmit their products to the ground, so we are increasingly dependent on pre-processing and downselection to contend with the communications bottleneck. No longer may we depend upon the constrained logistics in delivering end-to-end data delivery through manual reconfigurations, static event scheduling and execution on a per-vehicle basis, for these methods do not scale and therefore must give way to dynamic, networked approaches with an overall systems view in mind. Emerging mission requirements exhibit a trend toward multiple smaller-scale vehicles working together to perform dissimilar observations. Such operations necessitate sensor fusion across a constellation, and where data processing may be distributed throughout a fairly disconnected network whose topology changes over time in non-deterministic manners. Individual communications link performance is still very relevant to deploying an effective communications system, but now must be embedded within a greater architecture of capability to optimally utilize the bandwidth available from each link to generate an ultimate end-to-end quality of service. The deleterious effects of timing uncertainty across the arrangement presents a challenge to measurement synchronization and delivery, so a successful deployed system needs to be tolerant to the delays inherent in time-of-light between elements and digital processing latencies existing at each node. In this presentation we share the flight test results from a high performance Gbps laser communications terminal evaluated with a suite of store and forward capabilities called High-rate Delay Tolerant Networking (HDTN). The communications payload is operated over Lake Erie across a range of configurations including several convergence layers, and is evaluated to determine recovery time after link disruptions, information loss, efficiency and speed. The effectiveness of utilizing a flying laboratory to increase the Technology Readiness Level (TRL) of an integrated system in relevant environments is discussed, as well as the value of conducting aeronautics experiments to retire risk for technology infusion into space missions. Upcoming flight campaigns will be presented, including opportunities to demonstrate secure command and control, data intensive hyperspectral imaging, quantum link characterization, 4k High Definition (HD) video streaming and internetworked space-ground-aero relay operations. These experiments will pave the way for future missions which will depend upon interoperability across disparate government and privately owned networks, involve contention with uncertain and dynamic timing, and require agility to autonomously configure optimal parameters across networks of ever-increasing size and complexity to ensure data delivery. https://www1.grc.nasa.gov/space/scan/acs/tech-studies/dtn/

Daniel Raible↗