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DOE OSTI2025

Atomistic Mechanisms of the Crystallographic Orientation‐Dependent Cu 1.8 S Conductive Channel Formation in Cu 2 S‐Based Memristors

Achieving multiple types of resistive switching in a single material with controlled ionic motion is a key challenge in neuromorphic computing, traditionally addressed by combining materials with distinct switching behaviors. Here, Cu 2-x S is identified as a promising candidate to overcome this limitation due to its hierarchical phase transitions. Using in situ biasing experiments, reversible and non-reversible phase transitions (and resistive switching) are demonstrated in γ-Cu 2 S by controlling the compliance current. The formation of parallel high-digenite Cu 1.8 S channels, orientated along the γ-Cu 2 S [201] crystallographic direction, drives the nonvolatile resistive switching. These channels emerge via an intermediate δ-Cu 2 S phase and are stabilized at room temperature by residual strains, alongside β-Cu 2 S phase. In conclusion, the work clarifies the complex, electrically triggered phase transformations in γ-Cu 2 S, and highlights the potential of Cu 2-x S as a versatile material for neuromorphic computing.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

NASA NTRSDate not supplied

Degradation of Aluminum and Tantalum Wet Electrolytic Capacitors during High Temperature Storage

Aluminum electrolytic capacitors (AEC) are available to higher ranges of capacitance and voltage compared to tantalum electrolytic capacitors (TEC). However, evaporation of the electrolyte during operation or storage of conventional AEC that is accelerated with temperature does not allow use of these parts in space electronics. Instead, for systems requiring large value capacitors and high operating voltages, designers must use banks of TECs that increases substantially the size and weight of electronic modules. Development of hermetically sealed AECs might be beneficial for space systems provided the necessary reliability is assured. Increase in leakage current during storage of AEC is well known and is often explained by dissolution of aluminum oxide in electrolyte. However, other possible mechanisms of this effect have not been discussed. Although hermetically sealed TEC have been used in space systems for years, there is a lack of information about the effects of storage on their characteristics that is of great interest as a comparison for aluminum capacitors. This work explores degradation of AC characteristics (capacitance, dissipation factor, and equivalent series resistance) and DC characteristics (leakage and absorption currents) in different types of aluminum and tantalum hermetically sealed capacitors during long-term storage at high temperatures (100 °C, 125 °C, and 150 °C). It is shown that leakage currents are degrading in both types of capacitors, but this degradation is reversible after bias application. Mechanisms of degradation are discussed, and explanations based on the processes common for both types of capacitors are suggested. Problems associated with assessments of hermeticity and evaporation of the electrolyte in hermetically sealed capacitors are analyzed.

Alexander Teverovsky↗

DOE OSTI2024

Demonstrating the β-Ga 2 O 3 Schottky diodes for alpha radiation detection

Schottky barrier diodes were fabricated on (001) monoclinic β-Ga 2 O 3 wafers with low doped epitaxial layers of 7.0 × 10 15 cm −3 . Circular Ni Schottky contacts with area 2 mm 2 were deposited by electron beam evaporation. Devices were characterized electrically by performing forward and reverse current-voltage sweeps with a range of −100 V–2 V, as well as capacitance-voltage sweeps to −30 V. The breakdown voltage was also determined to be −180 V for the devices. Experiments measuring the electrical response from incident X-ray radiation was performed. A response time to X-ray radiation of less than 1 s was recorded and a decay time of approximately 2 s after removing X-ray source, which primarily attribute to X-ray switching on and off time. Energy spectra of alpha particles from a 0.9 μCi 241 Am button source was collected at various voltage biases using devices with the lowest measured leakage current while reverse biased. The total count rate was observed to increase linearly with increasing device bias. In conclusion, the peak channel number was observed to increase with increasing bias with the best resolution of 9.5% at −100 V reverse bias.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

NASA NTRS2005

Progress on the Plasmoid Thruster Experiment (PTX)

A plasmoid, also called a compact toroid, is a compact plasma structure with an integral magnetic field, that may be categorized according to the relative strength of the poloidal and toroidal magnetic field (Bp and Bt, respectively). An object with Bp/Bt much greater than 1 is called a Field Reverse Configuration (FRC); if Bp = Bt, it is called a Spheromak. The plasmoid thruster is a pulsed inductive device which operates by repetitively producing plasmoids that are accelerated and ejected at high velocity. As the process is inductive, this thruster avoids the problem of electrode erosion. Also, the magnetic structure of the plasmoid should suppress thermal and mass losses to the wall, and improve detachment of the plasma exhaust from the thruster. This concept should be capable of producing an Isp of 5,000 seconds and greater, with thrust densities of order 10(exp 5) N/sq m. The plasmoid thruster consists chiefly of a conical theta-pinch coil. Propellant is introduced onto a bias magnetic field, produced by an auxiliary coil, and is then pre-ionized, freezing in the magnetic field. The theta-pinch coil is then energized producing a field aligned anti- parallel to the bias field. The reversed field reconnects with the bias field to form the plasmoid. The magnetic pressure of the reversed field accelerates the plasmoid out of the thruster . A series of experiments have been conducted on the PTX device, which consisted of a single turn conical theta-pinch coil, driven by a 560 nF, 35 kV capacitor bank, which rang at a frequency of 500 kHz, and served all three functions required for formation: pre-ionization, bias field loading, and field reversal. Initial ionization was found to occur in an annular region at the exit plane of the coil, and was found to be reproducible with a variety of gases, including H2, D2, Ar, and an H2/N2 mixture (75% / 25%). A fast gas valve for injecting propellant has been tested, as well as a ringing pre-ionization circuit (operating at 5 Mhz) to better control the plasmoid formation. Velocities as high as 20 km/s have been measured for a plasmoid propagating into a static back-fill of neutral gas. Magnetic field and density measurements indicate that the plasmoid retains its structure well into the down-stream exhaust region, and that it is capable of pushing a dense cloud of neutral gas in front of it. Further experiments will focus on the effects of coil geometry and bias-field strength on the performance of the device. A high-power solid-state switching system is being developed in order to replace the spark-gap switch.

Martin, Adam↗

DOE OSTI2023

Sister Rod Destructive Examinations (FY23) Appendix F3: Uncertainty and Conservative Bias in the Cyclic Integrated Reversible-Bending Fatigue Test

The development and application of the Cyclic Integrated Reversible-Bending Fatigue Tester (CIRFT) has been documented over the past 10 years. The CIRFT system was developed in collaboration with the U.S. Nuclear Regulatory Commission (NRC) to address the concern that high-burnup fuel rod fatigue performance was degraded compared to cladding-only behavior. Fatigue data measured by CIRFT on high-burnup fuel rods were then used by the NRC to develop a fatigue response curve for pressurized water reactor fuel rods with Zircaloy-4 cladding in NUREG-2224. Subsequently, CIRFT has been used in the sister rod project to test whether reoriented hydrides associated with vacuum drying influenced the fatigue lifetime, to extend the fatigue testing database to include fuel rods with ZIRLO cladding, and to add to the experience on both Zircaloy-4 and M5 cladding. These data will be used as a reference for subsequent characterization of fuel rods removed from the high-burnup demonstration cask to better understand the effects of long-term dry storage, which can be thought of as a multiyear elevated temperature anneal. The objective of fatigue testing is to provide data that can be used to develop a best-estimate fatigue curve and a conservative fatigue design curve that accounts for uncertainty and can be compared with actual transportation conditions. The process for defining a design fatigue curve for commercial used fuel rods was developed by Oak Ridge National Laboratory (ORNL) in FY22. One issue noted in the fatigue evaluation was that the calculated combined uncertainty in the strain amplitude values determined from the measured data was large. It was proposed then to directly measure the uncertainty in the strain amplitude to either validate the calculated combined uncertainty or update the uncertainty based on the measurement data. Thus, the purpose of this appendix is to document the measured uncertainty in the strain amplitude data. In the process, it was determined that there has been a conservative bias in the calculated strain amplitude that is small enough to be within the measurement uncertainty. This observation is discussed herein, and a case is made to continue to include the conservative bias in the data.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗

DOE OSTI2021

Simulation and Modeling of Time-Resolved X-Ray Detector for the Saturn Accelerator

In this work, we present the technology-aided computer design (TCAD) device simulation and modeling of a silicon p-i-n diode for detecting time-dependent X-ray radiation. We show that the simulated forward and reverse breakdown current–voltage characteristics agree well with the measured data under nonradiation environment by only calibrating carrier lifetimes for the forward bias case and avalanche model critical fields for the reverse bias condition. Using the calibrated parameters and other nominal material properties, we simulated the radiation responses of the p-i-n diode and compared with experimental data when the diode was exposed to X-ray radiation at Sandia’s Saturn facility and the Idaho State University (ISU) TriMeV facility. For Saturn’s Gaussian dose-rate pulses, we show three findings from TCAD simulations. First, the simulated photocurrents are in excellent agreement with the measured data for two dose-rate pulses with peak values of 1.16×10 10 and 1.88×10 10 rad(Si)/s. Second, the simulation results of high dose-rate pulses predict increased delayed photocurrents with longer time tails in the diode electrical responses due to excess carrier generation. Third, simulated peak values of diode radiation responses versus peak dose rates at different bias conditions provide useful guidance to determine the dose-rate range that the p-i-n diode can reliably detect in experiment. For TriMeV’s non-Gaussian dose-rate pulse, our simulated diode response is in decent agreement with the measured data without further calibration. We also studied the effects of device geometry, recombination process, and dose-rate enhancement via TCAD simulations to understand the higher measured response in the time after the peak dose-rate radiation for the p-i-n diode exposed to TriMeV irradiation.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

DOE OSTI2025

Electrolytic gold plating, stripping, and ion transport dynamics through a solid-state iodide perovskite

The pronounced electrochemical reactivity between halide perovskites and metal electrodes can introduce mobile extrinsic metal ions which can cause device instability or enable novel functionalities. Here we systematically investigate the kinetics of gold cation (Au + ) migration in indium tin oxide (ITO)/methylammonium lead triiodide (MAPbI 3 )/Au model devices under long-term potentiostatic biasing. Scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), and density functional theory (DFT) analyses reveal that Au + ions, electrochemically generated at the Au anode, traverse the perovskite layer with diffusion coefficients on the order of 10 −11 to 10 −10 cm 2 s −1 and are subsequently reduced at the cathode as Au 0 clusters, resembling metal plating behavior in electrolytic cells and solid-state batteries during charging. Furthermore, reversing the applied bias strips the plated Au 0 , revealing reversibility suitable for bipolar resistive switching devices and providing direct evidence of the electrochemical and ionic nature of Au transport within the perovskite matrix. Quantitatively determining diffusion coefficients and ion concentrations provides foundational inputs for future drift-diffusion modelling opportunities and allows us to relate our findings to implications on long term operation of devices like photovoltaic modules. These results clearly demonstrate the solid-state electrochemical nature of perovskite devices, highlight methods to be more quantitative about ion transport properties, provide and emphasize the importance of disentangling electro-, photo-, photoelectrochemical processes for understanding device performance and unlocking new functionalities.

14 SOLAR ENERGY↗

DOE OSTI2023

Effects of fast and thermal neutron irradiation on Ga-polar and N-polar GaN diodes

Studies of the radiation tolerance and electrical behavior of gallium nitride (GaN) based devices are important for the next generation of high-power and high-voltage electronics that may be subjected to harsh environments such as nuclear reactor and fusion facilities, particle accelerators, and post-denotation environments. Here, in this work, we study the behavior of Ga-polar and N-polar GaN Schottky diodes before and after exposure to fast and thermal + fast neutrons. Temperature-dependent current–voltage (I–V) and circular transmission line method (CTLM) measurements were used to study the electrical characteristics. A strong reduction in reverse leakage current and an increase in differential resistance in forward bias were observed after neutron irradiation. Thermionic emission (TE), Frenkel–Poole (FP) emission, and Fowler–Nordheim (FN) tunneling models were used to explain the forward and reverse I–V characteristics pre- and post-irradiation. The study confirms that Ga-polar and N-polar GaN Schottky diodes exhibit different electrical responses to fast and thermal neutron irradiations. The reverse bias characteristics of N-polar diodes are less affected after the fast neutron irradiation compared to Ga-polar diodes, while in the forward bias region, the electrical behavior after fast and thermal neutron irradiations is similar in Ga-polar and N-polar diodes. The results indicate that the role of orientation should be considered in the design of GaN-based radiation-tolerant electronics.

42 ENGINEERING↗

NASA NTRSDate not supplied

Cold-Point Tropopause Temperature Bias in Reanalyses Modulated By Equatorial Waves

In this reanalysis inter-comparison study, we compare the modeled Cold-point tropopause temperature (CPT from model level data) near the equator to that of multi-mission GNSS-RO within a preliminary time period of 2007-2011. The known reanalysis CPT temperature warm bias is studied relative to the phase of equatorial waves filtered from GNSS-RO at tropopause level. This uncovers a common denominator in the CPT temperature bias behavior in all reanalyses: - When equatorial waves are present, within their cold phase the reanalysis bias is increased by over 1K, i.e. >1K on top of the reanalysis average warm bias. - Within an equatorial wave’s warm phase, the opposite is observed, with the reanalysis CPT temperature bias even being reversed at higher equatorial wave amplitudes, i.e. the modeled CPT becoming too cold in these cases. - With no equatorial wave anomalies present, the reanalysis bias remains at the average reported in previous inter-comparisons that looked at zonal-mean CPT biases. Inertia-Gravity and Mixed Rossby-Gravity waves show this behavior most clearly, Kelvin waves show a similar modulation but with half of the magnitude, and equatorial Rossby wave modulation of CPT reanalysis bias is still apparent but with further decreased magnitude. This hints on a time-space scale-dependence, with medium-smaller-scale and faster equatorial waves influencing CPT reanalysis bias the most. For comparison, the large-scale and slow-moving MJO does not show any of the effects described above. Current work focuses on the data assimilation response of the reanalysis systems, again relative to the equatorial wave’s phases.

Tropopause↗

NASA NTRS1975

On the origin of molecular 'handedness' in living systems

Elementary particle effects (beta-decay) provide only a weakly handed radiation in the biologically effective energy ranges. Global magnetic effects coupled to sunlight are randomized by paleomagnetic reversals. A persistent terrestrial handed bias at possible local biopoetic sites offers a more promising explanation for the origin of the 'handedness' of the molecules found among living systems on earth. Magnetite in lava flows maintains a handed bias for surface catalysis through many magnetic reversals. Indirect evidence for the hypothesis that magnetite contaminated with sulfur is a possible biopoetic site (Granick, 1957) has been provided by the molecular structure of ferredoxin - a single strand of the 14 primordial amino acids wrapped around an FeS core. Lava flows have been suggested as biopoetic sites by Fox (1964), since their temperature and chemical composition might allow for the rapid synthesis of prebiotic compounds at the surface of the primitive earth. The additional fact that magetite in lava flows also provides a persistent handed site for surface catalysis offers a further argument for the experimental investigation of this specific biopoetic environment.

Noyes, H. P.↗

DOE OSTI2024

Bipolar Membranes With Controlled, Microscale 3D Junctions Enhance the Rates of Water Dissociation and Formation

A soft lithographic method is developed for making bipolar membranes (BPMs) with catalytic junctions formed from arrays of vertically oriented microscale cylinders. The membranes are cast from reusable polydimethylsiloxane (PDMS) molds made from silicon masters, which are fabricated on 2" to 4" wafer scales by nanosphere lithography. High-aspect-ratio junctions are made on a length scale similar to the thickness of optimized catalyst layers for water dissociation, creating a platform for probing the dual effects of catalysis and local electric field at the microscale BPM junction. Optimized polymer materials and nanoscale metal oxide catalysts are used in this study. 3D BPMs are tested under reverse and forward bias conditions, exhibiting superior performance relative to their 2D counterparts. Under forward bias in H 2- O 2 fuel cells, 3D BPMs achieve a current density of 1500 mA cm –2 , ≈7 times higher than 2D membranes made from the same materials.

25 ENERGY STORAGE↗

DOE OSTI2021

Unraveling the hysteretic behavior at double cations-double halides perovskite - electrode interfaces

Despite over a decade of research on metal halide perovskites (MHPs) in the context of photovoltaic applications, understanding the nature of electronic and ionic processes associated with current-voltage (I-V) hysteretic behavior has been limited. Here, we explore the hysteretic behavior in (FAPbI 3 ) 0.85 (MAPbBr 3 ) 0.15 perovskite devices with lateral Cr electrodes by applying first order reversal curve (FORC) bias waveform in I-V, Kelvin probe force microscopy (KPFM) measurements, and in-situ chemical imaging by time-resolved time-of-flight secondary ion mass spectrometry (tr-ToF-SIMS). In dark, we reveal pronounced hysteretic behaviors of charge dynamics in the off-field by probing time-dependent current and contact potential difference (CPD). Under illumination, transient and hysteretic behaviors are significantly reduced. The tr-ToF-SIMS results reveal that the hysteretic behaviors are strongly associated with accumulation of Br- ions at the interfaces. In addition, the low mobility MA + ions result in transient behavior and contribute to the hysteretic phenomena. It was shown that Pb 2+ ions can be reduced at the interfaces due to electrochemical reactions with the electrode in the presence of charge injection and photogenerated charges. Furthermore, these hysteretic behaviors associated with charge dynamics, ion migration, and interfacial electrochemical reaction are critical to further improve the performance and stability of MHPs photovoltaics and optoelectronics.

42 ENGINEERING↗

DOE OSTI2023

Investigating Electric Field and Light Induced Degradation in Perovskite Solar Cells through Nanometer-Scale Potential Imaging

Electric field and light induced degradations in perovskite solar cells were evaluated through nanometer-scale potential imaging across the device by using in-situ Kelvin probe force microscopy (KPFM). We derived the electric field profile from potential profiles at different bias voltages to evaluate the locations and quality of junctions across the device. We found relative changes in electric field peak intensity at the HTL/perovskite and perovskite/ETL interfaces upon stressing devices separately under voltage or light. KPFM results during 12-hour stress/rest cycling under electrical bias show both reversible and irreversible changes in the device's interfacial fields. We also observed change in the electric field profile between control and degraded devices after 100 hours of stress/rest cycling under light. Our results demonstrate how nanometer-scale potential imaging can be used to understand the impacts of external electric fields and light soaking on both irreversible degradation and reversible metastability in perovskite solar cells.

Kelvin probe force microscopy↗

NASA NTRS1971

Silicon solar cells as a high-solar-intensity radiometer

The characteristics of a conventional, 1- by 2-cm, N/P, gridded silicon solar cell when used as a radiometer have been determined for solar intensity levels to 2800 mW/sq cm (20 solar constants). The short-circuit current was proportional to the radiant intensity for levels only to 700 mW/sq cm (5 solar constants). For intensity levels greater than 700 mW/sq cm, it was necessary to operate the cell in a photoconductive mode in order to obtain a linear relation between the measured current and the radiant intensity. When the solar cell was biased with a reverse voltage of -1 V, the measured current and radiant intensity were linearly related over the complete intensity range from 100 to 2800 mW/sq cm.

Spisz, E. W.↗

NASA NTRS1987

Temperature characteristics of silicon space solar cells and underlying parameters

Silicon space cells, 2 cm x 2 cm, with 10 ohm-cm p-base resistivity, 8-mil base thickness, and no back-surface fields have been investigated over the temperature range from 301 to 223 K by measurements of dark forward and reverse current-voltage characteristics and current-voltage relations under illumination. From dark forward bias data, the first and second diode saturation currents, I01 and I02, are determined and hence the base diffusion length and lifetime of minority carriers as functions of temperature. Lifetime increases exponentially with temperature and is explained by a Shockley-Read-Hall model with deep recombination levels 0.245 eV above the valence band. The I02 variation with temperature follows the Sah-Noyce-Shockley-Choo model except at low temperature where extra transitions raise the value above the predicted level. Reverse bias current at low voltage is a thermally assisted tunneling process via deep levels which are observed in base recombination at higher temperatures. The tunneling effects tend to become independent of temperature in the low-temperature region. These results demonstrate the ability to deduce basic parameters such as lifetime from simple measurements and show that back-surface fields offer no advantage at temperatures below 230 K. The analysis also explains the fall in lifetimes observed as the base conductivity increases, attributing it to native defects (perhaps carbon-oxygen-vacancy complexes) rather than the concentration of base dopant.

Anspaugh, B. E.↗

NASA NTRS1994

Electrical properties of epitaxial 3C- and 6H-SiC p-n junction diodes produced side-by-side on 6H-SiC substrates

3C-SiC (beta-SiC) and 6H-SiC p-n junction diodes have been fabricated in regions of both 3C-SiC and 6H-SiC epitaxial layers which were grown side-by-side on low-tilt-angle 6H-SiC substrates via a chemical vapor deposition (CVD) process. Several runs of diodes exhibiting state-of-the-art electrical characteristics were produced, and performance characteristics were measured and compared as a function of doping, temperature, and polytype. The first 3C-SiC diodes which rectify to reverse voltages in excess of 300 V were characterized, representing a six-fold blocking voltage improvement over experimental 3C-SiC diodes produced by previous techniques. When placed under sufficient forward bias, the 3C-SiC diodes emit significantly bright green-yellow light while the 6H-SiC diodes emit in the blue-violet. The 6H-SiC p-n junction diodes represent the first reported high-quality 6H-SiC devices to be grown by CVD on very low-tilt-angle (less than 0.5 deg off the (0001) silicon face) 6H substrates. The reverse leakage current of a 200 micron diameter circular device at 1100 V reverse bias was less than 20 nA at room temperature, and excellent rectification characteristics were demonstrated at the peak characterization temperature of 400 C.

EPITAXIAL LAYER↗

DOE OSTI2022

Interfacial antiferromagnetic phase induced two-step magnetization reversal in PbZr 0.52 Ti 0.48 O3/La 0.67 Sr 0.33 MnO 3 superlattices

Artificial multiferroic heterostructures have recently attracted much interests due to the demonstrated magnetoelectric coupling (MEC) and unique functionalities, promising a tantalizing perspective of novel applications in next-generation electronic, memory, sensor, and energy harvesting technologies. Herein, we report a two-step magnetization reversal in PbZr 0.52 Ti 0.48 O 3 /La 0.67 Sr 0.33 MnO 3 (PZT/LSMO) superlattices, which originates from the strongly entangled strain-, ferroelectric (FE)-polarization-, and exchange-dependent effects. Specifically, the preferential occupancy of the in-plane Mn d x 2 -y 2 orbitals is triggered via the collective effects of the large tensile strain and FE polarization, giving rise to an interfacial antiferromagnetic (AFM) layer with strong AFM anisotropy. The strong spin exchange coupling between the AFM layer and the adjacent ferromagnetic (FM) layer facilitates the magnetic stratification of the FM layer, leading to two coercivities, i.e., two-step magnetization reversal. Meanwhile, a sizeable exchange bias (EB) field is induced. The emerged two-step magnetization reversal concomitant with the pronounced EB phenomenon should be a signature of an enhanced MEC in PZT/LSMO superlattices. Finally, our results will stimulate further interests in multiferroic superlattices in applications of multiferroic-based devices.

36 MATERIALS SCIENCE↗

DOE OSTI2023

Hole doping in compositionally complex correlated oxide enables tunable exchange biasing

Magnetic interfaces and the phenomena arising from them drive both the design of modern spintronics and fundamental research. Recently, it was revealed that through designing magnetic frustration in configurationally complex entropy stabilized oxides, exchange bias can occur in structurally single crystal films. This eliminates the need for complex heterostructures and nanocomposites in the design and control of magnetic response phenomena. In this work, we demonstrate through hole doping of a high entropy perovskite oxide that tuning of magnetic responses can be achieved. With detailed magnetometry, we show magnetic coupling exhibiting a variety of magnetic responses including exchange bias and antiferromagnetic spin reversal in the entropy stabilized ABO 3 perovskite oxide La 1-x Sr x (Cr 0.2 Mn 0.2 Fe 0.2 Co 0.2 Ni 0.2 )O 3 family. We find that manipulation of the A-site charge state can be used to balance magnetic phase compositions and coupling responses. This allows for the creation of highly tunable exchange bias responses. In the low Sr doping regime, a spin frustrated region arising at the antiferromagnetic phase boundary is shown to directly couple to the antiferromagnetic moments of the film and emerges as the dominant mechanism, leading to a vertical shift of magnetization loops in response to field biasing. At higher concentrations, direct coupling of antiferromagnetic and ferromagnetic regions is observed. This tunability of magnetic coupling is discussed within the context of these three competing magnetic phases, revealing critical features in designing exchange bias through exploiting spin frustration and disorder in high entropy oxides.

36 MATERIALS SCIENCE↗