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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 217 records · Page 12
All sourcesNASA NTRSDOE OSTI
NASA NTRS1985

Highly efficient neodymium:yttrium aluminum garnet laser end pumped by a semiconductor laser array

In recent experiments, 80-mW CW power in a single mode has been achieved from a neodymium:yttrium aluminum garnet (Nd:YAG) laser with only 1 W of electrical power input to a single semiconductor laser array pump. This corresponds to an overall efficiency of 8 percent, the highest reported CW efficiency for a Nd:YAG laser. A tightly focused semiconductor laser end pump configuration is used to achieve high pumping intensities (on the order of 1 kW/sq cm), which in turn causes the photon to photon conversion efficiency to approach the quantum efficiency (76 percent for Nd:YAG at 1.06 microns pumped at 0.810 micron). This is achieved despite the dual-lobed nature of the pump. Through the use of simple beam-combining schemes (e.g., polarization coupling and multireflection point pumping), output powers over 1 W and overall electrical to optical efficiencies as high as 10 percent are expected.

Sipes, D. L.↗
NASA NTRS1985

Total-dose radiation effects data for semiconductor devices: 1985 supplement, volume 1

Steady-state, total-dose radiation test data are provided, in graphic format, for use by electronic designers and other personnel using semiconductor devices in a radiation environment. The data were generated by JPL for various NASA space programs. The document is in two volumes: Volume 1 provides data on diodes, bipolar transistors, field effect transistors, and miscellaneous semiconductor types, and Volume 2 provides total-dose radiation test data on integrated circuits. Volume 1 of this 1985 Supplement contains new total-dose radiation test data generated since the August 1, 1981 release date of the original Volume 1. Publication of Volume 2 of the 1985 Supplement will follow that of Volume 1 by approximately three months.

Martin, K. E.↗
NASA NTRS1986

Apparatus for edge etching of semiconductor wafers

A device for use in the production of semiconductors, characterized by etching in a rapidly rotating etching bath is described. The fast rotation causes the surface of the etching bath to assume the form of a paraboloid of revolution, so that the semiconductor wafer adjusted at a given height above the resting bath surface is only attacked by etchant at the edges.

Casajus, A.↗
NASA NTRS1985

Power conversion efficiency of semiconductor injection lasers and laser arrays in CW operation

The problem of optimizing power conversion efficiency of semiconductor lasers and laser arrays and minimizing efficiency degradation due to temperature effects is treated. A method for calculating this efficiency is described and some calculated results are presented and discussed. Under some conditions, a small increase in the thermal resistance of the device can result in a large reduction of its efficiency. Temperature effects are important in high-power semiconductor laser, and in particular in laser arrays, where low thermal resistance heat sinking may be crucial to the device operation.

Katz, J.↗
NASA NTRS1987

Deep, Precise Etching in Semiconductors

Semiconductors made to accept precise etching after pretreatment. Combination of material destabilization and anisotropic etching permits formation of precise perpendicular-wall cavities in silicon wafers and other semiconductors. New technique extends capabilities of current micromachining technology to fabrication of submillimeter waveguide arrays and filters. Pre-etching process currently used to fabricate thin-walled arrays of submillimeter waveguides for use as dichroic bandpass filters. Possible applications include integration of sensor probes and processing of circuitry on same silicon chip.

Shlichta, P. J.↗
NASA NTRS1987

Approximate Analysis of Semiconductor Laser Arrays

Simplified equation yields useful information on gains and output patterns. Theoretical method based on approximate waveguide equation enables prediction of lateral modes of gain-guided planar array of parallel semiconductor lasers. Equation for entire array solved directly using piecewise approximation of index of refraction by simple functions without customary approximation based on coupled waveguid modes of individual lasers. Improved results yield better understanding of laser-array modes and help in development of well-behaved high-power semiconductor laser arrays.

Marshall, William K.↗
NASA NTRS1987

Growing II/VI Semiconductors With Double Decantation

Concept for growing single crystals combines sheet solidification with controlled cooling. Proposed method for II/VI semiconductor compounds cools newly solidified crystal gradually and nearly isothermally so few defects formed. Method obtains maximum amount of crystal from minimum amount of melt. Double decantation causes sheet crystal to cool first in liquid, then in gas. Vessel tilted to pour off molten semiconductor material. Second tilt, in opposite direction, pours off encapsulant.

Morrison, Andrew D.↗
NASA NTRS1986

Total-dose radiation effects data for semiconductor devices. 1985 Supplement. Volume 2, part B

Steady-state, total-dose radiation test data are provided in graphic format, for use by electronic designers and other personnel using semiconductor devices in a radiation environment. The data were generated by JPL for various NASA space programs. The document is in two volumes: Volume 1 provides data on diodes, bipolar transistors, field effect transistors, and miscellaneous semiconductor types, and Volume 2 (Parts A and B) provides data on integrated circuits. The data are presented in graphic, tabular, and/or narrative format, depending on the complexity of the integrated circuit. Most tests were done steady-state 2.5-MeV electron beam. However, some radiation exposures were made with a Cobalt-60 gamma ray source, the results of which should be regarded as only an approximate measure of the radiation damage that would be incurred by an equivalent electron dose. All data were generated in support of NASA space programs by the JPL Radiation Effects and Testing Group (514).

Martin, K. E.↗
NASA NTRS1987

Method and apparatus for measuring minority carrier lifetime in a direct band-gap semiconductor

A direct band-gap semiconductor is exposed to intensity-modulated photon radiation having a characteristic energy at least as great as the energy gap of the semiconductor. This produces a time dependent concentration of excess charge carriers through the material, producing a luminescence signal modulated at the same frequency as the incident radiation but shifted in phase by an amount related to the lifetime of minority carriers. In a preferred embodiment, the phase shift of the luminescence signal is determined by transforming it to a modulated electrical signal and mixing the electrical signal with a reference signal modulated at the same frequency and having a phase which is known relative to the incident radiation. Minority carrier lifetime is calculated by integrating a direct current component of the mixed signal (F sub dc) over a 2 pi range in phase of the reference signal.

Vonroos, Oldwig↗
NASA NTRS1987

Improving the method of calculating electronic properties of narrow bandgap semiconductors

A previously developed code for calculating the mobility of charge carriers in narrow bandgap semiconductors does not predict the correct temperature dependence in all cases. It is thought that this is due to the way the electronic screening of the carriers is treated in the model. The objective of this research is to improve the handling of the screening by going beyond the current first Born approximation. Much of this work is directly related to the alloy semiconductor Hg sub 1-xCd sub xTe which is important for infrared detectors and is a good candidate for microgravity crystal growth. The principal conclusion, so far, is that the major difficulty is probably the treatment of short range screening at higher temperatures.

Patterson, James D.↗
NASA NTRS1987

Advanced development of double-injection, deep-impurity semiconductor switches

Deep-impurity, double-injection devices, commonly refered to as (DI) squared devices, represent a class of semiconductor switches possessing a very high degree of tolerance to electron and neutron irradiation and to elevated temperature operation. These properties have caused them to be considered as attractive candidates for space power applications. The design, fabrication, and testing of several varieties of (DI) squared devices intended for power switching are described. All of these designs were based upon gold-doped silicon material. Test results, along with results of computer simulations of device operation, other calculations based upon the assumed mode of operation of (DI) squared devices, and empirical information regarding power semiconductor device operation and limitations, have led to the conculsion that these devices are not well suited to high-power applications. When operated in power circuitry configurations, they exhibit high-power losses in both the off-state and on-state modes. These losses are caused by phenomena inherent to the physics and material of the devices and cannot be much reduced by device design optimizations. The (DI) squared technology may, however, find application in low-power functions such as sensing, logic, and memory, when tolerance to radiation and temperature are desirable (especially is device performance is improved by incorporation of deep-level impurities other than gold.

Hanes, M. H.↗
NASA NTRS1988

Structural properties of bismuth-bearing semiconductor alloys

The structural properties of bismuth-bearing III-V semiconductor alloys InPBi, InAsBi, and InSbBi were studied theoretically. Bond energies, bond lengths, and strain coefficients were calculated for pure AlBi, GaBi, and InBi compounds and their alloys, and predictions were made for the mixing enthalpies, miscibility gaps, and critical metastable-to-stable material transition temperatures. Miscibility calculations indicate that InSbBi will be the most miscible, and the InPBi will be the the most difficult to mix. However, calculations of the hardness of the Bi compounds indicate that, once formed, the InPBi alloy will be harder than the other Bi alloys and substantially harder than the currently favored narrow-gap semiconductor HgCdTe.

Berding, M. A.↗
NASA NTRS1988

Optical correlators with fast updating speed using photorefractive semiconductor materials

The performance of an updatable optical correlator which uses a photorefractive semiconductor to generate real-time matched filters is discussed. The application of compound semiconductors makes possible high-speed operation and low optical input intensities. The Bragg diffraction is considered, along with the speed and power characteristics of these materials. Experimental results on photorefractive GaAs are presented.

Gheen, Gregory↗
NASA NTRS1989

Optical Processing With Photorefractive Semiconductors

Experimental phase-conjugate four-wave-mixing apparatus used to demonstrate capabilities of GaAs (and potentially of other photorefractive semiconductors like InP and CdTe) for optical processing of information. With modifications, performs any of three basic image-processing functions: transfer to different light beam, enhancement of edges, and autocorrelation. Includes crystal of GaAs of 5 by 9 by 9 mm with cubic crystalline axes. Advantages include high speed and compatibilty with other semiconductor devices.

Cheng, Li-Jen↗
NASA NTRS1989

Optical Communication with Semiconductor Laser Diode

Theoretical and experimental performance limits of a free-space direct detection optical communication system were studied using a semiconductor laser diode as the optical transmitter and a silicon avalanche photodiode (APD) as the receiver photodetector. Optical systems using these components are under consideration as replacements for microwave satellite communication links. Optical pulse position modulation (PPM) was chosen as the signal format. An experimental system was constructed that used an aluminum gallium arsenide semiconductor laser diode as the transmitter and a silicon avalanche photodiode photodetector. The system used Q=4 PPM signaling at a source data rate of 25 megabits per second. The PPM signal format requires regeneration of PPM slot clock and word clock waveforms in the receiver. A nearly exact computational procedure was developed to compute receiver bit error rate without using the Gaussion approximation. A transition detector slot clock recovery system using a phase lock loop was developed and implemented. A novel word clock recovery system was also developed. It was found that the results of the nearly exact computational procedure agreed well with actual measurements of receiver performance. The receiver sensitivity achieved was the closest to the quantum limit yet reported for an optical communication system of this type.

Davidson, Frederic↗
NASA NTRS1989

Novel applications of optical techniques to the study of buried semiconductor interfaces

Detailed electronic and structural information about buried semiconductor interfaces obtained through application of optical techniques is discussed. The measurements described include the determination of band discontinuities, strain, and disorder associated with semiconductor heterointerfaces. The contactless and nondestructive nature of these optical techniques is particularly important for the study of heterointerfaces which are inherently inaccessible to direct electrical or physical contact.

Wilson, Barbara A.↗
NASA NTRS1990

In-situ integrated processing and characterization of thin films of high temperature superconductors, dielectrics and semiconductors by MOCVD

In this strategy of depositing the basic building blocks of superconductors, semiconductors, and dielectric having common elements, researchers deposited superconducting films of Y-Ba-Cu-O, semiconductor films of Cu2O, and dielectric films of BaF2 and Y2O3 by metal oxide chemical vapor deposition (MOCVD). By switching source materials entering the chamber, and by using direct writting capability, complex device structures like three-terminal hybrid semiconductors/superconductors transistors can be fabricated. The Y-Ba-Cu-O superconducting thin films on BaF2/YSZ substrates show a T(sub c) of 80 K and are textured with most of the grains having their c-axis or a-axis perpendicular to the substrate. Electrical characteristics as well as structural characteristics of superconductors and related materials obtained by x-ray defraction, electron microscopy, and energy dispersive x-ray analysis are discussed.

Singh, R.↗
NASA NTRS1991

Neutron, gamma ray and post-irradiation thermal annealing effects on power semiconductor switches

The effects of neutron and gamma rays on the electrical and switching characteristics of power semiconductor switches must be known and understood by the designer of the power conditioning, control, and transmission subsystem of space nuclear power systems. The SP-100 radiation requirements at 25 m from the nuclear source are a neutron fluence of 10(exp 13) n/sq cm and a gamma dose of 0.5 Mrads. Experimental data showing the effects of neutrons and gamma rays on the performance characteristics of power-type NPN Bipolar Junction Transistors (BJTs), Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs), and Static Induction Transistors (SITs) are presented. These three types of devices were tested at radiation levels which met or exceeded the SP-100 requirements. For the SP-100 radiation requirements, the BJTs were found to be most sensitive to neutrons, the MOSFETs were most sensitive to gamma rays, and the SITs were only slightly sensitive to neutrons. Post-irradiation thermal anneals at 300 K and up to 425 K were done on these devices and the effectiveness of these anneals are also discussed.

Schwarze, G. E.↗