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At least 217 records · Page 12

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NASA NTRS1986

Correlation of processing and sintering variables with the strength and radiography of silicon nitride

A sintered Si3N4-SiO2-Y2O3 composition, NASA 6Y, was developed that reached four-point flexural average strength/standard deviation values of 857/36, 544/33, and 462/59 MPa at room temperature, 1200 and 1370 C respectively. These strengths represented improvements of 56, 38, and 21 percent over baseline properties at the three test temperatures. At room temperature the standard deviation was reduced by over a factor of three. These accomplishments were realized by the iterative utilization of conventional x-radiography to characterize structural (density) uniformity as affected by systematic changes in powder processing and sintering parameters. Accompanying the improvement in mechanical properties was a change in the type of flaw causing failure from a pore to a large columnar beta- Si3N4 grain typically 40 to 80 microns long, 10 to 30 microns wide, and with an aspect ratio of 5:1.

Sanders, W. A.↗

NASA NTRS1986

Radiographic detectability limits for seeded voids in sintered silicon carbide and silicon nitride

Conventional and microfocus X-radiographic techniques were compared to determine relative detectability limits for voids in green and sintered SiC and Si3N4. The relative sensitivity of the techniques was evaluated by comparing their ability to detect voids that were artificially introduced by a seeding process. For projection microfocus radiography the sensitivity of void detection at a 90/95 probability of detection/confidence level is 1.5 percent of specimen thickness in sintered SiC and Si3N4. For conventional contact radiography the sensitivity is 2.5 percent of specimen thickness. It appears that microfocus projection radiography is preferable to conventional contact radiography in cases where increased sensitivity is required and where the additional complexity of the technique can be tolerated.

Baaklini, G. Y.↗

NASA NTRS1986

Effect of grain-boundary crystallization on the high-temperature strength of silicon nitride

Si3N4 specimens having the composition 88.7 wt pct Si3N4-4.9 wt pct SiO2-6.4 wt pct Y2O3 were sintered at 2140 C under 25 atm N2 for 1 h and then subjected to a 5 h anneal at 1500 C. Crystallization of an amorphous grain-boundary phase resulted in the formation of Y2Si2O7. The short-time 1370 C strength of this material was compared with that of material of the same composition having no annealing treatment. No change in strength was noted. This is attributed to the refractory nature of the yttrium-rich grain-boundary phase (apparently identical in both glassy and crystalline phases) and the subsequent domination of the failure process by common processing flaws.

Pierce, L. A.↗

NASA NTRS1986

Correlation of processing and sintering variables with the strength and radiography of silicon nitride

A sintered Si3N4-SiO2-Y2O3 composition, NASA 6Y, was developed that reached four-point flexural average strength/standard deviation values of 857/36, 544/33, and 462/59 MPa at room temperature, 1200 and 1370 C, respectively. These strengths represented improvements of 56, 38, and 21 percent over baseline properties at the three test temperatures. At room temperature the standard deviation was reduced by over a factor of three. These accomplishments were realized by the iterative utilization of conventional X-radiography to characterize structural (density) uniformity as affected by systematic changes in powder processing and sintering parameters. Accompanying the improvement in mechanical properties was a change in the type of flaw causing failure from a pore to a large columnar beta-Si3N4 grain typically 40-80 micron long, 10-30 micron wide, and with an aspect ratio of 5:1.

Sanders, W. A.↗

NASA NTRS1988

Molten-salt corrosion of silicon nitride. I - Sodium carbonate. II - Sodium sulfate

An experimental study of the corrosion of Si3N4 under thin films of Na2CO3 at 1000 C has been conducted using both pure Si3N4 and Si3N4 with various additives. The reaction mechanism is shown to consist of: (1) the decomposition of Na2CO3 and the formation of Na2SiO3; (2) rapid oxidation; and (3) the formation of a protective silica layer below the silicate. In the second part, the corrosion mechanism of Si3N4 + Na2SO4/O2 at 1000 C was studied for both pure and additive-containing Si3N4. The reaction of Si3N4 + Na2SO4 was found to involve an initial period of slow weight loss (due to Na2SO4 vaporization and oxidation-dissolution) followed by further oxidation or the near termination of the reaction, depending on the Si3N4 additive.

Fox, Dennis S.↗

NASA NTRS1988

Thermal effects on the mechanical properties of SiC fiber reinforced reaction bonded silicon nitride matrix (SiC/RBSN) composites

The elevated temperature four-point flexural strength and the room temperature tensile and flexural strength properties after thermal shock were measured for ceramic composites consisting of 30 vol pct uniaxially aligned 142 micron diameter SiC fibers in a reaction bonded Si3N4 matrix. The elevated temperature strengths were measured after 15 min of exposure in air at temperatures to 1400 C. Thermal shock treatment was accomplished by heating the composite in air for 15 min at temperatures to 1200 C and then quenching in water at 25 C. The results indicate no significant loss in strength properties either at temperature or after thermal shock when compared with the strength data for composites in the as-fabricated condition.

Bhatt, R. T.↗

NASA NTRS1989

Hot isostatic pressing of silicon nitride with boron nitride, boron carbide, and carbon additions

Si3N4 test bars containing additions of BN, B4C, and C, were hot isostatically pressed in Ta cladding at 1900 and 2050 C to 98.9 percent to 99.5 percent theoretical density. Room-temperature strength data on specimens containing 2 wt pct BN and 0.5 wt pct C were comparable to data obtained for Si3N4 sintered with Y2O3, Y2O3 and Al2O3, or ZrO2. The 1370 C strengths were less than those obtained for additions of Y2O3 or ZrO2 but greater than those obtained from a combination of Y2O3 and Al2O3. SEM fractography indicated that, as with other types of Si3N4, room-temperature strength was controlled by processing flaws. The decrease in strength at 1370 C was typical of Si3N4 having an amorphous grain-boundary phase. The primary advantage of nonoxide additions appears to be in facilitating specimen removal from the Ta cladding.

Mieskowski, Diane M.↗

NASA NTRS1990

Influence of interfacial shear strength on the mechanical properties of SiC fiber reinforced reaction-bonded silicon nitride matrix composites

The influence of fiber/matrix interface microstructure and interfacial shear strength on the mechanical properties of a fiber-reinforced ceramic composite was evaluated. The composite consisted of approximately 30 vol percent uniaxially aligned 142 microns diameter SiC fibers (Textron SCS-6) in a reaction-bonded Si3N4 matrix (SiC/RBSN). The interface microstructure was varied by controlling the composite fabrication conditions and by heat treating the composite in an oxidizing environment. Interfacial shear strength was determined by the matrix crack spacing method. The results of microstructural examination indicate that the carbon-rich coating provided with the as-produced SiC fibers was stable in composites fabricated at 1200 C in a nitrogen or in a nitrogen plus 4 percent hydrogen mixture for 40 hr. However this coating degraded in composites fabricated at 1350 C in N2 + 4 percent H2 for 40 and 72 hr and also in composites heat treated in an oxidizing environment at 600 C for 100 hr after fabrication at 1200 C in a nitrogen. It was determined that degradation occurred by carbon removal which in turn had a strong influence on interfacial shear strength and other mechanical properties. Specifically, as the carbon coating was removed, the composite interfacial shear strength, primary elastic modulus, first matrix cracking stress, and ultimate tensile strength decreased, but the first matrix cracking strain remained nearly the same.

Bhatt, Ramakrishna T.↗

NASA NTRS1989

Microstructural changes in beta-silicon nitride grains upon crystallizing the grain-boundary glass

Crystallizing the grain-boundary glass of a liquid-phase-sintered Si3N4 ceramic for 2 h or less at 1500 C led to formation of delta-Y2Si2O7. After 5 h at 1500 C, the delta-Y2Si2O7 had transformed to beta-Y2Si2O7 with a concurrent dramatic increase in dislocation density within beta-Si3N4 grains. Reasons for the increased dislocation density are discussed. Annealing for 20 h at 1500 C reduced dislocation densities to the levels found in as-sintered material.

Lee, William E.↗

NASA NTRS1990

Burner rig hot corrosion of silicon carbide and silicon nitride

A number of commercially available SiC and Si3N4 materials were exposed to 1000 C for 40 h in a high-velocity, pressurized burner rig as a simulation of an aircraft turbine environment. Na impurities (2 ppm) added to the burner flame resulted in molten Na2SO4 deposition, attack of the SiC and Si3N4, and formation of substantial Na2O+x(SiO2) corrosion product. Room-temperature strength of the materials decreased as a result of the formation of corrosion pits in SiC and grain-boundary dissolution and pitting in Si3N4.

Fox, Dennis S.↗

NASA NTRS1990

Active-to-passive transition in the oxidation of silicon carbide and silicon nitride in air

The active-to-passive transition in the oxidation of SiC and Si3N4 was determined in a flowing air environment as a function of temperature and total pressure. The experimentally observed transition temperatures ranged from a low of 1347 C to a high of 1543 C for partial pressures of oxygen of 2.5 and 123.2 Pa, respectively. The SiC and Si3N4 samples had approximately the same transition point for a given pressure. In general, the higher the flow rate, the higher the transition temperature for a given pressure. The transitions for SiC measured in this study agree with previous data for the transition of SiC measured in pure oxygen at reduced pressures and in oxygen inert gas mixtures.

Vaughn, Wallace L.↗

NASA NTRS1990

Thermal effects on the mechanical properties of SiC fibre reinforced reaction-bonded silicon nitride matrix composites

Bhatt, R. T.↗

NASA NTRS1991

Microstructural changes in Beta-silicon nitride grains upon crystallizing the grain-boundary glass

Crystallizing the grain boundary glass of a liquid phase sintered Si3N4 ceramic for 2 h or less at 1500 C led to formation of gamma Y2Si2O7. After 5 h at 1500 C, the gamma Y2Si2O7 had transformed to beta Y2Si2O7 with a concurrent dramatic increase in dislocation density within beta Si3N4 grains. Reasons for the increased dislocation density is discussed. Annealing for 20 h at 1500 C reduced dislocation densities to the levels found in as-sintered materials.

Lee, William E.↗

NASA NTRS1991

Indirect measurement of the viscosity of the intergranular glass phase in yttria-sintered silicon nitride

Dense, sintered Si3N4 possesses a residual intergranular glass phase which softens at high temperatures, resulting in degradation of the ceramic's mechanical properties at high temperatures. An important parameter in the determination of the high temperature mechanical properties of sintered Si3N4 is the temperature-viscosity relationship of the intergranular glass. A method for indirectly measuring the intergranular glass viscosity at a given temperature using physical modelling of a two phase glass crystal microstructure and beam bending viscometry measurements of Si3N4 is described. Intergranular glass viscosities obtained by this method are presented for a yttria sintered Si3N4.

Dittmar, Mark B.↗

NASA NTRS1991

Crack healing in silicon nitride due to oxidation

The crack healing behavior of a commercial, MgO-containing, hot pressed Si3N4 was studied as a function of temperature in oxidizing and inert annealing environments. Crack healing occurred at a temperature 800 C or higher due to oxidation regardless of crack size, which ranged from 100 microns (indentation crack) to 1.7 mm (SEPB precrack). The resulting strength and apparent fracture toughness increased at crack healing temperature by 100 percent and 300 percent, respectively. The oxide layer present in the crack plane was found to be highly fatigue resistant, indicating that the oxide is not solely silicate glass, but a mixture of glass, enstatite, and/or cristobalite that was insensitive to fatigue in a room temperature water environment.

Choi, Sung R.↗

NASA NTRS1990

Influence of interfacial shear strength on the mechanical properties of SiC fiber reinforced reaction-bonded silicon nitride matrix composites

An evaluation is made of the influence of interfacial microstructure and shear strength on the mechanical properties of a 30 vol pct uniaxially-aligned SiC fiber-reinforced reaction-bonded Si3N4-matrix composite whose interface microstructure was varied through control of fabrication conditions and by heat-treatment in an oxidizing environment. The carbon-rich coating of the as-produced SiC fibers was stable in composites fabricated at 1200 C in an N or N + 4-percent H mixture for 40 hrs. This coating was degraded in composites fabricated at 1350 C in N + 4 percent H for 40 and 72 hrs, as well as after heat-treatment in an oxidizing environment at 600 C for 100 hrs even after fabrication at 1200 C in N. This degradation occurred via carbon removal.

Bhatt, Ramakrishna T.↗

NASA NTRS1992

Role of interfacial thermal barrier in the transverse thermal conductivity of uniaxial SiC fiber-reinforced reaction bonded silicon nitride

The transverse thermal conductivity of reaction-bonded Si3N4 is significantly affected by an interfacial barrier at the interface formed with SiC reinforcing fibers. A comparative study of composites with and without reinforcing-fiber carbon coatings found the coating to reduce effective thermal conductivity by a factor of about 2; this, however, is partially due to a thermal expansion-mismatch gap between fiber and matrix. HIPing of composites with coated fibers led to an enhancement of thermal conductivity via improved interfacial thermal contact and greater grain size and crystallinity of the fibers.

Bhatt, H.↗

NASA NTRS1992

Oxidation kinetics of CVD silicon carbide and silicon nitride

The long-term oxidation behavior of pure, monolithic CVD SiC and Si3N4 is studied, and the isothermal oxidation kinetics of these two materials are obtained for the case of 100 hrs at 1200-1500 C in flowing oxygen. Estimates are made of lifetimes at the various temperatures investigated. Parabolic rate constants for SiC are within an order of magnitude of shorter exposure time values reported in the literature. The resulting silica scales are in the form of cristobalite, with cracks visible after exposure. The oxidation protection afforded by silica for these materials is adequate for long service times under isothermal conditions in 1-atm dry oxygen.

Fox, Dennis S.↗