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At least 217 records · Page 12

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NASA NTRS1985

Historical perspective of barriers to achieving high-efficiency silicon solar cells

Early silicon solar cells were made of metallurgical-grade silicon with very low efficiency. The single-crystal silicon introduced in the mid-50's increased the efficiency to the 5% to 10% region. Throughout the 1960s the technology of the 2 x 2 cm or 2 x 4 cm space solar cell with 10% efficiency was established. In the early 1970s work related to the violet cell upset the status quo and space solar cells and cells in general became more efficient. The rest of the decade became characterized by establishing a terrestrial photovoltaic technology to support the development of a new industry. Costs per watt became the dominant consideration and frequently the efficiency was compromised. The introduction of materials and other forms of silicon dropped the efficiency and it is now a state of mine that accomplishing 10% efficiency with some alternative combination is regarded as success. Silicon solar cells are capable of delivering efficiences much greater than 10%.

Lindmayer, J.↗

NASA NTRS1985

Stress rate and proof-testing of silicon wafers

Fracture mechanics test methods were applied to evaluate the proof-test characteristics of single-crystal silicon wafers. The results indicate that the strength distribution of silicon wafers is truncated by proof-testing. No subcritical crack growth occurred during proof-loading, as inferred from the lack of a stress-rate effect on strength. Mechanical proof-testing appears to be an effective method for eliminating weak samples before cell processing.

Chen, C. P.↗

NASA NTRS1985

Molybdenum-silicon multilayer mirrors for the extreme ultraviolet

Multilayer structures of molybdenum and silicon have been synthesized by sputter deposition onto flat silicon single-crystal silicon substrates and spherically ground (0.5and 22.0-m radii) fused silica substrates; and the reflectivities for 170.4-A (72.8-eV), 160.1-A (77.4-eV), and 228-A (54.4-eV) light measured at near normal incidence. Observed peak values ranged from 26.2 to 78 percent, the highest reflectivities occurring closest to normal incidence. Energy resolutions were about 10 in all cases. Model calculations were performed using optical constants and experimentally determined multilayer structural parameters. In all cases the measured reflectivities were equal to or larger (by up to a factor of 2) than the calculated values, a result attributed to uncertainty in the optical constants used in the calculations. Experimental and calculated angular-peak positions and energy resolutions were in good agreement. The high reflectivities of these molybdenum-silicon structures will make possible application of traditional optics approaches in the EUV and support new developments including free-electron lasers.

Barbee, T. W., Jr.↗

NASA NTRS1984

GaAs CLEFT solar cells for space applications

Although GaAs solar cells are radiation-resistant and have high conversion efficiencies, there are two major obstacles that such cells must overcome before they can be widely adopted for space applications: GaAs wafers are too expensive and cells made from these wafers are too heavy. The CLEFT process permits the growth of thin single-crystal films on reusable substrates, resulting in a drastic reduction in both cell cost and cell weight. Recent advances in CLEFT technology have made it possible to achieve efficiencies of about 14 percent AM0 for 0.51-sq cm GaAs solar cells 5 microns thick with a 41-mil-thick coverglass. In preliminary experiments efficiencies close to 19 percent AM1 have been obtained for 10-micron-thick cells. It is suggested that the CLEFT technology should yield inexpensive, highly efficient modules with a beginning-of-life specific power close to 1 kW/kg (for a coverglass thickness of 4 mils).

Fan, J. C. C.↗

NASA NTRS1985

Ceramic wear in indentation and sliding contact

The various wear mechanisms involved with single-crystal ceramic materials in indentation and in sliding contacts. Experiments simulating interfacial events have been conducted with hemispherical, conical and pyramidal indenters (riders). With spherical riders, under either abrasive or adhesive conditions, two types of fracture pits have been observed. First, spherical-shaped fracture pits and wear particles are found as a result of either indenting or sliding. These are shown to be due to a spherical-shaped fracture along the circular or spherical stress trajectories. Second, polyhedral fracture pits and debris, produced by anisotropic fracture, and also found both during indenting and sliding. These are primarily controlled by surface and subsurface cracking along cleavage planes. Several quantitative results have also been obtained from this work. For example, using a pyramidal diamond, crack length of Mn-Zn ferrite in the indentation process grows linearly with increasing normal load. Moreover, the critical load to fracture both in indentation and sliding is essentially isotropic and is found to be directly proportional to the indenter radius.

Miyoshi, K.↗

NASA NTRS1984

Terrestrial photovoltaic collector technology trends

Following the path of space PV collector development in its early stages, terrestrial PV technologies based upon single-crystal silicon have matured rapidly. Currently, terrestrial PV cells with efficiencies approaching space cell efficiencies are being fabricated into modules at a fraction of the space PV module cost. New materials, including CuInSe2 and amorphous silicon, are being developed for lowering the cost, and multijunction materials for achieving higher efficiency. Large grid-interactive, tracking flat-plate power systems and concentrator PV systems totaling about 10 MW, are already in operation. Collector technology development both flat-plate and concentrator, will continue under an extensive government and private industry partnership.

Shimada, K.↗

NASA NTRS1986

Depositing Diamondlike Carbon Films

New process demonstrated to make thin films (usually thousands of angstroms to few microns thick) that have properties of diamonds. Various plasma and ion-beam techniques employed to generate films. Films made by radio-frequency plasma decomposition of hydrocarbon gas or other alkanes, by low-energy carbon-ion-beam deposition, or by ion plating and dual ion technique using carbon target. Advantages of new process over others are films produced, though amorphous, are clear, extremely hard, chemically inert, of high resistivity, and have index of refraction of 3.2 properties similar to those of single-crystal diamonds. Films have possible uses in microelectronic applications, high-energy-laser and plastic windows, corrosion protection for metals, and other applications where desired properties of film shaped during the film-formation process.

Mirtich, M. J.↗

NASA NTRS1986

Faster Edge-Define Silicon-Ribbon Growth

End-cooling allows faster growth and yields single-crystal ribbons. Improvement in edge-defined film-fed process for growing silicon ribbons increases speed of growth and improves quality of silicon product. Also produces silicon sheets, webs, or boules. Cold shoes cool melt at ends of emerging sheet. Since solidification at ends now occurs before end menisci reach maximum height, ribbon drawn substantially faster.

Richter, R.↗

NASA NTRS1985

Environmental Degradation of Materials: Surface Chemistry Related to Stress Corrosion Cracking

Parallel experiments have been performed in order to develop a comprehensive model for stress cracking (SCC) in structural materials. The central objective is to determine the relationship between the activity and selectivity of the microstructure of structural materials to their dissolution kinetics and experimentally measured SCC kinetics. Zinc was chosen as a prototype metal system. The SCC behavior of two oriented single-crystal disks of zinc in a chromic oxide/sodium sulfate solution (Palmerton solution) were determined. It was found that: (1) the dissolution rate is strongly (hkil)-dependent and proportional to the exposure time in the aggressive environment; and (2) a specific slip system is selectively active to dissolution under applied stress and this slip line controls crack initiation and propagation. As a precursor to potential microgrvity experiments, electrophoretic mobility measurements of zinc particles were obtained in solutions of sodium sulfate (0.0033 M) with concentrations of dissolved oxygen from 2 to 8 ppm. The equilibrium distribution of exposed oriented planes as well as their correlation will determine the particle mobility.

Schwarz, J. A.↗

NASA NTRS1985

Materials requirements for high-efficiency silicon solar cells

To achieve higher Si solar cell efficiencies (greater than 20%), better single-crystal Si must be produced. It is believed possible to bring Cz (Czochralski) Si up to the same low recombination level as FZ (Float Zone) Si. It is also desirable that solar cell Si meet the following requirements: long minority carrier lifetime (0.2 ohm-cm p-type with tau less than 500 microsec); repeatedly uniform lifetime (not spread from 50 to 1000 microsec); a lifetime that does not decrease during normal device processing; a silicon wafer sheet that is flat and stays throughout normal device processing; uniform and reasonable mechanical strength; and, manufacture at low cost (less than $50/sq m).

Wolf, M.↗

NASA NTRS1985

Potential productivity benefits of float-zone versus Czochralski crystal growth

Efficient mass production of single-crystal silicon is necessary for the efficient silicon solar arrays needed in the coming decade. However, it is anticipated that there will be difficulty growing such volumes of crystals using conventional Czochralski (Cz) methods. While the productivity of single crystals might increase with a crystal diameter increase, there are two obstacles to the mass production of large diameter Czochralski crystals, the long production cycle due to slow growth rate and the high heat requirements of the furnaces. Also counterproductive would be the large resistivity gradient along the growth direction of the crystals due to impurity concentration. Comparison between Float zone (FZ) and Cz crystal growth on the basis of a crystal 150 mm in diameter is on an order of two to four times in favor of the FZ method. This advantage results from high growth rates and steady-state growth while maintaining a dislocation-free condition and impurity segregation.

Abe, T.↗

NASA NTRS1986

Effect of crystallographical and geometrical changes of a ferrite head on magnetic signals during the sliding process with magnetic tape

This paper reviews changes in the crystalline structure and geometry of lapped Mn-Zn ferrite heads in sliding contact with magnetic tape and the effects of these changes on magnetic signals. A highly textured, polycrystalline structure was produced on the surface of a single-crystal Mn-Zn ferrite head when it was finished with an aluminum oxide lapping tape. Sliding this lapped surface against a magnetic tape produced a nearly amorphous structure. The sliding process led to a degradation in readback signal of 1 to 2 dB (short-wavelength recording). Furthermore, wear of the magnetic head caused geometrical changes in the head surface. The signal read back with the worn magnetic head was sensitive to operating parameters such as head displacement and tape tension. A change in operating parameters created head-to-tape spacings and, consequently, excessive gains or losses in the readback signal.

Miyoshi, K.↗

NASA NTRS1985

Temperature dependence of gamma-gamma prime lattice mismatch in nickel-base superalloys

High temperature X-ray diffraction techniques were used to determine the gamma-gamma prime lattice mismatch of three different nickel-base superalloys at temperatures between 18 and 1000 C. The measurements were performed on oriented single-crystal disks which had been aged to produce a semicoherent gamma-gamma prime structure. The thermal expansion of the lattice parameters of the gamma and gamma-prime phases was described by a second-order polynomial expression. The expansion of the gamma-prime phase was consistently smaller than that of the gamma phase, which caused the lattice mismatch to become more negative at higher temperatures. It was also shown that high values of lattice mismatch resulted in increased rates of directional gamma-prime coarsening during elevated temperature creep exposure.

Nathal, M. V.↗

NASA NTRS1986

The evaluation of single crystal superalloys for turbopump blades in the SSME

This paper discusses single-crystal nickel-base superalloys for use in gaseous hydrogen environments, like the Space Shuttle Main Engine (SSME). PWA 1480E was chosen as a candidate alloy based on strength retention in hydrogen environments. Selection of single-crystal-alloy primary and secondary crystallographic axes allows tailoring of the airfoil resonant frequency as a function of orientation. PWA 1480E 111-line primary orientation proved to be the most hydrogen-resistant orientation. By choosing the proper primary and secondary orientation combinations, the fourth excitation mode of the SSME may be avoided.

Bowen, K.↗

NASA NTRS1986

Dry etching of beta-SiC in CF4 and CF4 + O2 mixtures

Dry etching of cubic (100) beta-SiC single-crystal thin films produced via chemical-vapor deposition (CVD) has been performed in CF4 and CF4 + O2 mixtures, in both the reactive-ion-etching (RIE) and plasma-etching modes. The latter process yielded measurable etch rates, but produced a dark surface layer which appears, from the results of secondary-ion mass spectrometry, to be residual SiC. The RIE samples had no residual layer, but Auger electron spectroscopy did reveal a C-rich surface. The optimal RIE conditions were obtained with 10 sccm of pure CF4 at 40 mtorr and a power density of 0.548 W/sq cm, giving an etch rate of 23.3 nm/min. Neither the increase of temperature between 293 and 573 K, nor the incremental addition of O2 to CF4 to 50 percent, produced any strong effect on the etch rates of SiC during RIE. Pictorial evidence of fine line structures produced by RIE of beta-SiC films are also presented.

Palmour, J. W.↗

NASA NTRS1986

Point contact silicon solar cells

The construction of a 22.2% efficient single-crystal silicon solar cell fabricated at Stanford University is described. The cell dimensions were 3 x 5 mm and 100 microns thick with a base lifetime of 500 microseconds. The cell featured light trapping between a texturized top surface and a reflective bottom surface, small point contact diffusions, alternating between n-type and p-type in a polka-dot pattern on the bottom surface, and a surface passivation on all surfaces between contact regions.

Swanson, R. M.↗

NASA NTRS1986

Protein crystal growth; Proceedings of the First International Conference, Stanford University, CA, August 14-16, 1985

Papers are presented on mechanisms of nucleation and growth of protein crystals, the role of purification in the crystallization of proteins and nucleic acids, and the effect of chemical impurities in polyethylene glycol on macromolecular crystallization. Also considered are growth kinetics of tetragonal lysozyme crystals, thermodynamic and kinetic considerations for crystal growth of complex molecules from solution, protein single-crystal growth under microgravity, and growth of organic crystals in a microgravity environment. Papers are also presented on preliminary investigations of protein crystal growth using the Space Shuttle, convective diffusion in protein crystal growth, and the growth and characterization of membrane protein crystals.

Feigelson, R. S.↗

NASA NTRS1986

Plastic deformation of a magnesium oxide 001-plane surface produced by cavitation

An investigation was conducted to examine plastic deformation of a cleaved single-crystal magnesium oxide 001-plane surface exposed to cavitation. Cavitation damage experiments were carried out in distilled water at 25 C by using a magnetostrictive oscillator in close proximity (2 mm) to the surface of the cleaved specimen. The dislocation-etch-pit patterns induced by cavitation were examined and compared with that of microhardness indentations. The results revealed that dislocation-etch-pit patterns around hardness indentations contain both screw and edge dislocations, while the etch-pit patterns on the surface exposed to cavitation contain only screw dislocations. During cavitation, deformation occurred in a thin surface layer, accompanied by work-hardening of the ceramic. The row of screw dislocations underwent a stable growth, which was analyzed crystallographically.

Hattori, S.↗