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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 217 records · Page 12
All sourcesNASA NTRSDOE OSTI
NASA NTRS1989

High-power low-threshold graded-index separate confinement heterostructure AlGaAs single quantum well lasers on Si substrates

A high-power low-threshold graded-index separate confinement heterostructure AlGaAs single quantum well laser on Si substrates has been demonstrated for the first time by a hybrid growth of migration-enhanced molecular beam epitaxy followed by metalorganic vapor phase epitaxy. The quantum well laser showed an output power of more than 400 mW per facet under pulsed conditions. A room-temperature threshold current of 300 mA was obtained with a differential quantum efficiency of 40 percent without facet coating. The threshold current density was 550 A/sq cm for a cavity length of 500 microns. These results show the highest peak power reported to date for low-threshold lasers on Si substrates. The full width at half maximum of the far-field pattern parallel to the junction was 6 deg. Threshold current densities as low as 250 A/sq cm were obtained for lasers on GaAs substrates.

Kim, Jae-Hoon↗
NASA NTRS1989

Molecular beam epitaxial growth of high-quality InSb on InP and GaAs substrates

Epitaxial layers of InSb were grown on InP and GaAs substrates by molecular beam epitaxy. The dependence of the epilayer quality on flux ratio, J sub Sb4/J sub In, was studied. Deviation from an optimum value of J sub Sb4/J sub In (approx. 2) during growth led to deterioration in the surface morphology and the electrical and crystalline qualities of the films. Room temperature electron mobilities as high as 70,000 and 53,000 sq cm /V-s were measured in InSb layers grown on InP and GaAs substrates, respectively. Unlike the previous results, the conductivity in these films is n-type even at T = 13 K, and no degradation of the electron mobility due to the high density of dislocations was observed. The measured electron mobilities (and carrier concentrations) at 77 K in InSb layers grown on InP and GaAs substrates are 110,000 sq cm/V-s (3 x 10(15) cm(-3)) and 55,000 sq cm/V-s (4.95 x 10(15) cm(-3)), respectively, suggesting their application to electronic devices at cryogenic temperatures.

Oh, J. E.↗
NASA NTRS1989

Transient-mode liquid phase epitaxial growth of GaAs on GaAs-coated Si substrates prepared by migration-enhanced molecular beam epitaxy

Planar oxide-maskless growth of GaAs was demonstrated by transient-mode liquid phase epitaxy (TMLPE) on GaAs-coated Si substrates that were prepared by migration-enhanced molecular beam epitaxy (MEMBE). In TMLPE, the cool substrate was brought into contact with hot melts for a short time. A GaAs layer as thick as 30 microns was grown in 10 sec. The etch pits observed in TMLPE-grown layers became longer in one direction and decreased in density with increasing the TMLPE epilayer thickness. The density of etch pits in a 20 micron-thick layer was approximately 5 x 10 the 6th/sq cm. Strong bandgap emission elliptically polarized with a major axis perpendicular to the surface was observed at about 910 nm, while deep-level emission from the TMLPE/MEMBE GaAs interface was detected at 980 nm. The photoluminescence intensity divided by the carrier concentration of the TMLPE-grown layer was about 270 times larger than that of the MEMBE-grown layer used as a substrate.

Nakamura, Shuji↗
NASA NTRS1990

Measurement of the intrinsic bond strength of brittle thin films on flexible substrates

The brittle cracking and subsequent debonding of nickel films deposited on polymer substrates subjected to uniaxial strain is investigated. Stress analyses for a film/substrate system are performed. Based on the analysis, the interfacial bond strength between brittle thin films and flexible substrates can be evaluated in terms of the tensile strength of the coating and the length of the largest segment that first debonds. Experiments were performed on Ni films with different thicknesses evaporated on polyethylene terephthalate substrates and the intrinsic bond strength was evaluated. The interfacial bond strengths were shown to be relatively independent of the film thickness for the range studied.

Guo, Q.↗
NASA NTRS1991

Rise-time response of nickel-foil-on-Kapton-substrate, hot-film, shear-stress sensors

An existing nickel-foil-on-Kapton-substrate sensor design was modified by including two heated elements in an attempt to minimize or reduce substrate conduction effects. The rise-time responses of the original and modified sensors were then investigated in unsteady flows of 0.5-1-s duration, consistent with flows encountered in wind-energy applications. The results obtained indicate a measurable degradation in transient performance due to the activation of the dynamic guard heater. Transient heat conduction within the substrate remains the limiting factor in such applications.

Reda, Daniel C.↗
NASA NTRS1991

Deposition of high quality YBa2Cu3O(7-delta) thin films over large areas by pulsed laser ablation with substrate scanning

The paper describes thin films deposited in a system where substrates are scanned over areas up to 3.5 x 3.5 cm through the stationary plume of an ablated material defined by an aperture. These YBCO films are deposited on LaAlO3 and SrTiO3 substrates with the thickness of 90 and 160 nm. Attention is focused on the main features of the deposition system: line focusing of the laser beam on the target; an aperture defining the area of the plume; computerized stepper motor-driven X-Y stage translating the heated sampler holder behind the plume-defining aperture in programmed patterns; and substrate mounting block with uniform heating at high temperatures over large areas. It is noted that the high degree of uniformity of the properties in each film batch illustrates that the technique of pulsed laser deposition can be applied to produce large YBCO films of high quality.

Davis, M. F.↗
NASA NTRS1991

High-T sub c fluorine-doped YBa2Cu3O(y) films on ceramic substrates by screen printing

Thick films of fluorine-doped YBa2Cu3O(y) were screen printed on highly polished alumina, magnesia spinel, strontium titanate, and yttria-stabilized zirconia (YSZ) substrates. They were annealed at 1000 C and soaked in oxygen at 450 C, followed by slow cooling to room temperature. The films were characterized by electrical resistivity measurements as a function of temperature and x-ray diffraction. The film on YSZ showed the best characteristics with a T sub c (onset) of 91 K, T sub c (R equals 0) of 88.2 K, and a transition width, delta T sub c (10-90 percent), of approximately 1.7 K. The film adhesion, probably controlled by interdiffusion of cations between the film and the substrate, was good in all cases except on strontium titanate where the film completely detached from the substrate.

Bansal, Narottam P.↗
NASA NTRS1992

Crystalline orientations of Tl2Ba2Ca2Cu3O(x) grains on MgO, SrTiO3, and LaAlO3 substrates

Crystalline orientations of Tl2Ba2Ca2Cu3O(x) grains in magnetron sputtered films on MgO (001), SrTiO3 (001), and LaAlO3 (001) substrates were investigated by scanning electron microscopy. In contrast to the nearly single crystalline films on the lattice matched substrates SrTiO3 and LaAlO3, films on the MgO (001) substrate, being polycrystalline in nature, exhibit several preferred in-plane grain orientations. These orientations agree well with a simplified theory of near-coincidence site lattices between Tl2Ba2Ca2Cu3O(x) and MgO.

Liou, S. H.↗
NASA NTRS1993

Polymer Substrates For Lightweight, Thin-Film Solar Cells

Substrates survive high deposition temperatures. High-temperature-resistant polymers candidate materials for use as substrates of lightweight, flexible, radiation-resistant solar photovoltaic cells. According to proposal, thin films of copper indium diselenide or cadmium telluride deposited on substrates to serve as active semiconductor layers of cells, parts of photovoltaic power arrays having exceptionally high power-to-weight ratios. Flexibility of cells exploited to make arrays rolled up for storage.

Lewis, Carol R.↗
NASA NTRS1993

Atomic probe microscopy of 3C SiC films grown on 6H SiC substrates

The surface of 3C SiC films grown on 6H SiC substrates has been studied by atomic probe microscopy in air. Atomic-scale images of the 3C SiC surface have been obtained by STM which confirm the 111 line type orientation of the cubic 3C layer grown on the 0001 plane type surface of the hexagonal 6H substrate. The nearest-neighbor atomic spacing for the 3C layer has been measured to be 3.29 +/- 0.2 A, which is within 7 percent of the bulk value. Shallow terraces in the 3C layer have been observed by STM to separate regions of very smooth growth in the vicinity of the 3C nucleation point from considerably rougher 3C surface regions. These terraces are oriented at right angles to the growth direction. Atomic force microscopy has been used to study etch pits present on the 6H substrate due to high temperature HCl cleaning prior to CVD growth of the 3C layer. The etch pits have hexagonal symmetry and vary in depth from 50 nm to 1 micron.

Steckl, A. J.↗
NASA NTRS1993

Demonstration of Y1Ba2Cu3O(7-delta) and complementary metal-oxide-semiconductor device fabrication on the same sapphire substrate

We report the first fabrication of active semiconductor and high-temperature superconducting devices on the same substrate. Test structures of complementary MOS transistors were fabricated on the same sapphire substrate as test structures of Y1Ba2Cu3O(7-delta) flux-flow transistors, and separately, Y1Ba2Cu3O(7-delta) superconducting quantum interference devices utilizing both biepitaxial and step-edge Josephson junctions. Both semiconductor and superconductor devices were operated at 77 K. The cofabrication of devices using these disparate yet complementary electronic technologies on the same substrate opens the door for the fabrication of true semiconductive/superconductive hybrid integrated circuits capable of exploiting the best features of each of these technologies.

Burns, M. J.↗
NASA NTRS1994

Use of lunar regolith as a substrate for plant growth

Regenerative Life Support Systems (RLSS) will be required to regenerate air, water, and wastes, and to produce food for human consumption during long-duration missions to the Moon and Mars. It may be possible to supplement some of the materials needed for a lunar RLSS from resources on the Moon. Natural materials at the lunar surface may be used for a variety of lunar RLSS needs, including (1) soils or solid-support substrates for plant growth, (2) sources for extraction of essential, plant-growth nutrients, (3) substrates for microbial populations in the degradation of wastes, (4) sources of O2 and H2, which may be used to manufacture water, (5) feed stock materials for the synthesis of useful minerals (e.g., molecular sieves), and (6) shielding materials surrounding the outpost structure to protect humans, plants, and microorganisms from harmful radiation. Use of indigenous lunar regolith as a terrestrial-like soil for plant growth could offer a solid support substrate, buffering capacity, nutrient source/storage/retention capabilities, and should be relatively easy to maintain. The lunar regolith could, with a suitable microbial population, play a role in waste renovation; much like terrestrial waste application directly on soils. Issues associated with potentially toxic elements, pH, nutrient availability, air and fluid movement parameters, and cation exchange capacity of lunar regolith need to be addressed before lunar materials can be used effectively as soils for plant growth.

Ming, D. W.↗
NASA NTRS1995

Oxide perovskite crystals for HTSC film substrates microwave applications

The research focused upon generating new substrate materials for the deposition of superconducting yttrium barium cuprate (YBCO) has yielded several new hosts in complex perovskites, modified perovskites, and other structure families. New substrate candidates such as Sr(Al(1/2)Ta(1/2))O3 and Sr(Al(1/2)Nb(1/2))O3, Ba(Mg(1/3)Ta(2/3))O3 in complex oxide perovskite structure family and their solid solutions with ternary perovskite LaAlO3 and NdGaO3 are reported. Conventional ceramic processing techniques were used to fabricate dense ceramic samples. A laser heated molten zone growth system was utilized for the test-growth of these candidate materials in single crystal fiber form to determine crystallographic structure, melting point, thermal, and dielectric properties as well as to make positive identification of twin free systems. Some of those candidate materials present an excellent combination of properties suitable for microwave HTSC substrate applications.

Bhalla, A. S.↗
NASA NTRS1995

Photodeposition of amorphous polydiacetylene films from monomer solutions onto transparent substrates

Polydiacetylenes are a very promising class of polymers for both photonic and electronic applications because of their highly conjugated structures. For these applications, high-quality thin polydiacetylene films are required. We have discovered a novel technique for obtaining such films of a polydiacetylene derivative of 2-methyl-4-nitroaniline using photodeposition from monomer solutions onto UV transparent substrates. This heretofore unreported process yields amorphous polydiacetylene films with thicknesses on the order of I micron that have optical quality superior to that of films grown by standard crystal growth techniques. Furthermore, these films exhibit good third-order nonlinear optical susceptibilities; degenerate four-wave mixing experiments give x(3) values on the order of 10(exp -8) - 10(exp -7) esu. We have conducted masking experiments which demonstrate that photodeposition occurs only where the substrate is directly irradiated, clearly indicating that the reaction occurs at the surface. Additionally, we have also been able to carry out photodeposition using lasers to form thin polymer circuits. In this work, we discuss the photodeposition of polydiacetylene thin films from solution, perform chemical characterization of these films, investigate the role of the substrate, speculate on the mechanism of the reaction, and make a preliminary determination of the third-order optical nonlinearity of the films. This simple, straightforward technique may ultimately make feasible the production of polydiacetylene thin films for technological applications.

Paley, M. S.↗
NASA NTRS1995

ZnO films on /001/-cut (110)-propagating GaAs substrates for surface acoustic wave device applications

A potential application for piezoelectric films substrates is the monolithic integration of surface acoustic wave (SAW) devices with GaAs electronics. Knowledge of the SAW properties of the layered structure is critical for the optimum and accurate design of such devices. The acoustic properties of ZnO films sputtered on /001/-cut group of (110) zone axes-propagating GaAs substrates are investigated in this article, including SAW velocity, effective piezoelectric coupling constant, propagation loss, diffraction, velocity surface, and reflectivity of shorted and open metallic gratings. The measurements of these essential SAW properties for the frequency range between 180 and 360 MHz have been performed using a knife-edge laser probe for film thicknesses over the range of 1.6-4 micron and with films of different grain sizes. The high quality of dc triode sputtered films was observed as evidenced by high K(sup 2) and low attenuation. The measurements of the velocity surface, which directly affects the SAW diffraction, on the bare and metalized ZnO on SiO2 or Si3N4 on /001/-cut GaAs samples are reported using two different techniques: (1) knife-edge laser probe, (2) line-focus-beam scanning acoustic microscope. It was found that near the group of (110) zone axes propagation direction, the focusing SAW property of the bare GaAs changes into a nonfocusing one for the layered structure, but a reversed phenomenon exists near the (100) direction. Furthermore, to some extent the diffraction of the substrate can be controlled with the film thickness. The reflectivity of shorted and open gratings are also analyzed and measured. Zero reflectivity is observed for a shorted grating. There is good agreement between the measured data and theoretical values.

Hickernell, Frederick S.↗
NASA NTRS1994

In Vitro Selection of Optimal DNA Substrates for Ligation by a Water-Soluble Carbodiimide

We have used in vitro selection to investigate the sequence requirements for efficient template-directed ligation of oligonucleotides at 0 deg C using a water-soluble carbodiimide as condensing agent. We find that only 2 bp at each side of the ligation junction are needed. We also studied chemical ligation of substrate ensembles that we have previously selected as optimal by RNA ligase or by DNA ligase. As anticipated, we find that substrates selected with DNA ligase ligate efficiently with a chemical ligating agent, and vice versa. Substrates selected using RNA ligase are not ligated by the chemical condensing agent and vice versa. The implications of these results for prebiotic chemistry are discussed.

Harada, Kazuo↗
NASA NTRS1996

YBCO High-Temperature Superconducting Filters on M-Plane Sapphire Substrates

Since the discovery of High Temperature Superconductors (HTS) in 1986, microwave circuits have been demonstrated using HTS films on various substrates. These HTS-based circuits have proven to operate with less power loss than their metallic film counterparts at 77 K. This translates into smaller and lighter microwave circuits for space communication systems such as multiplexer filter banks. High quality HTS films have conventionally been deposited on lanthanum aluminate (LaAlO3) substrates. However, LaAlO3 has a relative dielectric constant (epsilon(sub r)) of 24. With a epsilon(sub r) approx. 9.4-11.6, sapphire (Al2O3) would be a preferable substrate for the fabrication of HTS-based components since the lower dielectric constant would permit wider microstrip lines to be used in filter design, since the lower dielectric constant would permit wider microstrip lines to be used for a given characteristic impedance (Z(sub 0)), thus lowering the insertion losses and increasing the power handling capabilities of the devices. We report on the fabrication and characterization of YBa2Cu3O(7-delta) (YBCO) on M-plane sapphire bandpass filters at 4.0 GHz. For a YBCO 'hairpin' filter, a minimum insertion loss of 0.5 dB was measured at 77 K as compared with 1.4 dB for its gold counterpart. In an 'edge-coupled' configuration, the insertion loss went down from 0.9 dB for the gold film to 0.8 dB for the YBCO film at the same temperature.

Sabataitis, J. C.↗
NASA NTRS1993

Radiation Damage Effects in Far Ultraviolet Filters and Substrates

New advances in VUV thin film filter technology have been made using filter designs with multilayers of materials such as Al2O3, BaF2, CaF2, HfO2, LaF3, MgF2, and SiO2. Our immediate application for these filters will be in an imaging system to be flown on a satellite where a 2 X 9 R(sub E) orbit will expose the instrument to approximately 275 krads of radiation. In view of the fact that no previous studies have been made on potential radiation damage of these materials in the thin film format, we report on such an assessment here. Transmittances and reflectances of BaF2, CaF2, HfO2, LaF3, MgF2, and SiO2 thin films on MgF2 substrates, Al2O3 thin films on fused silica substrates, uncoated fused silica and MgF2, and four multilayer filters made from these materials were measured from 120 nm to 180 nm before and after irradiation by 250 krads from a Co-60 gamma radiation source. No radiation-induced losses in transmittance or reflectance occurred in this wavelength range. Additional postradiation measurements from 160 nm to 300 nm indicated a 3 - 5% radiation-induced absorption near 260 nm in some of the samples with MgF2 substrates. From these measurements it is concluded that far ultraviolet filters made from the materials tested should experience less that 5% change from exposure to up to 250 krads of high energy radiation in space applications.

Keffer, Charles E.↗