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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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All sourcesNASA NTRSDOE OSTI
NASA NTRS2021

Avionics Radiation Hardness Assurance (RHA) Guidelines

Based on the need to develop and adopt timely and up-to-date guidance to ensure that natural space radiation environment threats do not compromise mission success, the NASA Engineering and Safety Center (NESC) was solicited to develop and publish guidance for deriving radiation hardness assurance (RHA) requirements and for evaluating avionics hardware elements with respect to total ionizing dose, total non-ionizing dose, and single event effects. This document contains the outcome of the NESC assessment.

Guidelines↗
DOE OSTI2020

Integrated Circuit Design for Radiation-Hardened Charge-Sensitive Amplifier Survived up to 2 Mrad

According to the continuous development of metal-oxide semiconductor (MOS) fabrication technology, transistors have naturally become more radiation-tolerant through steadily decreasing gate-oxide thickness, increasing the tunneling probability between gate-oxide and channel. Unfortunately, despite this radiation-hardened property of developed transistors, the field of nuclear power plants (NPPs) requires even higher radiation hardness levels. Particularly, total ionizing dose (TID) of approximately 1 Mrad could be required for readout circuitry under severe accident conditions with 100 Mrad around a reactor in-core required. In harsh radiating environments such as NPPs, sensors such as micro-pocket-fission detectors (MPFD) would be a promising technology to be operated for detecting neutrons in reactor cores. For those sensors, readout circuits should be fundamentally placed close to sensing devices for minimizing signal interferences and white noise. Therefore, radiation hardening ability is necessary for the circuits under high radiation environments. This paper presents various integrated circuit designs for a radiation hardened charge-sensitive amplifier (CSA) by using SiGe 130 nm and Si 180 nm fabrication processes with different channel widths and transistor types of complementary metal-oxide-semiconductor (CMOS) and bipolar CMOS (BiCMOS). These circuits were tested under γ–ray environment with Cobalt-60 of high level activity: 490 kCi. The experiment results indicate amplitude degradation of 2.85%–34.3%, fall time increase of 201–1730 ns, as well as a signal-to-noise ratio (SNR) of 0.07–11.6 dB decrease with irradiation dose increase. These results can provide design guidelines for radiation hardening operational amplifiers in terms of transistor sizes and structures.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
NASA NTRS2014

Investigation of the Semicoa 2N7616 and 2N7425 and the Microsemi 2N7480 for Single-Event Gate Rupture and Single-Event Burnout

Single-event-effect test results for hi-rel total-dose-hardened power MOSFETs are presented in this report. The 2N7616 and the 2N7425 from Semicoa and the 2N7480 from International Rectifier were tested to NASA test condition standards and requirements. The 2N7480 performed well and the data agree with the manufacture's data. The 2N7616 and 2N7425 were entry parts from Semicoa using a new device architecture. Unfortunately, the device performed poorly and Semicoa is withdrawing power MOSFETs from it line due to these data. Vertical metal-oxide-semiconductor field-effect transistors (MOSFETs) are the most commonly used power transistor. MOSFETs are typically employed in power supplies and high current switching applications. Due to the inherent high electric fields in the device, power MOSFETs are sensitive to heavy ion irradiation and can fail catastrophically as a result of single-event gate rupture (SEGR) or single-event burnout (SEB). Manufacturers have designed radiation-hardened power MOSFETs for space applications. See [1] through [5] for more information. The objective of this effort was to investigate the SEGR and SEB responses of two power MOSFETs recently produced. These tests will serve as a limited verification of these parts. It is acknowledged that further testing on the respective parts may be needed for some mission profiles.

Scheick, Leif↗
NASA NTRS1983

The damage equivalence of electrons, protons, alphas and gamma rays in rad-hard MOS devices

This paper reports on a study of damage equivalence in rad-hard MOS devices with 100,000 rads (SiO2) capability. Damage sensitivities for electrons of 1, 2, 3, 5, and 7 MeV, protons of 1, 3, 7, 22, and 40 MeV, 3.4-MeV alphas, and Co-60 gammas were measured and compared. Results indicated that qualitatively the same charge recombination effects occurred in hard oxide devices for doses of 100,000 rads (SiO2) as in soft oxide parts for doses of 1 to 4 krads (SiO2). Consequently, damage equivalency or non-equivalency depended on radiation type and energy. However, recovery effects, both during and after irradiation, controlled relative damage sensitivity and its dependency on total dose, dose rate, supply bias, gate bias, radiation type, and energy. Correction factors can be derived from these data or from similar tests of other hard oxide type, so as to properly evaluate the combined effects of the total space environment.

Stassinopoulos, E. G.↗
NASA NTRS1990

The effect of electron irradiation on YBa2Cu3O(x) with gold bead contacts

The effect of 1-MeV electron irradiation, up to a total dose of 5.7 x 10 to the 17th electrons/sq cm at room temperature on YBa2Cu3O(x) was investigated using gold bead contacts made by the melting technique. The superconducting transition temperature Tc, the critical current density Jc at 77 K, the normal-state resistivity, and the contact resistance for gold bead contacts were measured as a function of fluence on the same samples without disturbing the contacts. Tc remained constant at 91 K, and Jc at 77 K remained constant around 90 A/sq cm. The normal-state resistivity increased systematically by about 15 percent for the total dose. Finally, the surface contact resistance at 77 K remained less than 4.2 microohm sq cm throughout the radiations. These studies took place over an 8-month period, and subsequent measurements indicate that the results are definitely due to radiation effects and not aging effects. It is concluded that the superconductor YBa2Cu3O(x) with gold bead contacts would perform well in a space environment of electron irradiation.

Caton, R.↗
DOE OSTI2025

Effect of Gamma Radiation on TaOₓ ECRAM

Electrochemical random access memory (ECRAM) is an emerging three-terminal nonvolatile memory (NVM) with highly controllable channel conductance which is promising for use as an analog memory (or synapse) in analog in-memory computing (IMC) systems. Energy-efficient analog IMC computing is particularly desirable for power-constrained, high-radiation environments such as satellites. However, little is known about the suitability of ECRAM for use in a total ionizing dose (TID) environment. Here, this work investigates the effect of Co-60 gamma radiation on the channel conductance and noise—two properties critical for analog IMC systems—of a TaO x -based ECRAM up to 17.3 Mrad(SiO 2 ) for both low- and high-channel-conductance state devices. A transient increase in conductance is observed in response to radiation which consists of two elements: an immediate increase in conductivity due to photocurrent and a secondary increase in conductivity, which has a slower rise and saturation and can persist for hours after exposure. This secondary, persistent photoconductivity is attributed to charging caused by hole trapping. These transient effects would not likely occur in a space environment due to the low dose rate compared with this experiment. No permanent change is found in the low conductance state (LCS) following exposure and the minor shift in the high conductance change would be less significant than the regular retention decay in this state. A permanent increase in the random telegraph noise is observed, possibly due to increased traps created in the channel. This work demonstrates that TaO x -based ECRAM is suitable for use in spaceborne analog IMC systems that are subject to significant TID.

ECRAM↗
NASA NTRS1981

Infrared spectroscopic analysis of the effects of simulated space radiation on a polyimide

Infrared spectroscopic techniques have been used to study the effects of electron radiation on the polyimide PMDA-p,p-prime- ODA. The radiation exposures were made at various dose rates, for a total dose approximately equal to that for 30 years of exposure to electron radiation in geosynchronous earth orbit. At high dose rates the major effect was probably the formation of a polyisoimide or a charged quaternary amine, and at the low dose rates the effect was a reduction in the amount or aromatic ether linkage. In addition, the effects of dose rate for a small total dose were studied. Elevated temperatures occurred at high dose rates and were, in part, probably the cause of the radiation product. The data suggest that dose rates for accelerated simulations of the space environment should not exceed 100,000 rads/sec.

Ferl, J. E.↗
NASA NTRS2019

Space Radiation and Plasma Effects on Satellites and Aviation: Quantities and Metrics for Tracking Performance of Space Weather Environment Models

The Community Coordinated Modeling Center has been leading communitywide space science and space weather model validation projects for many years. These efforts have been broadened and extended via the newly launched International Forum for Space Weather Modeling Capabilities Assessment (https://ccmc.gsfc.nasa.gov/assessment/). Its objective is to track space weather models' progress and performance over time, a capability that is critically needed in space weather operations and different user communities in general. The Space Radiation and Plasma Effects Working Team of the afore mentioned International Forum works on one of the many focused evaluation topics and deals with five different subtopics (https://ccmc.gsfc.nasa.gov/assessment/topics/radiationall.php) and varieties of particle populations: Surface Charging from tens of eV to 50keV electrons and internal charging due to energetic electrons from hundreds keV to several MeVs. Single event effects from solar energetic particles and galactic cosmic rays (several MeV to TeV), total dose due to accumulation of doses from electrons (>100 keV) and protons (>1 MeV) in a broad energy range, and radiation effects from solar energetic particles and galactic cosmic rays at aviation altitudes. A unique aspect of the Space Radiation and Plasma Effects focus area is that it bridges the space environments, engineering, and user communities. The intent of the paper is to provide an overview of the current status and to suggest a guide for how to best validate space environment models for operational/engineering use, which includes selection of essential space environment and effect quantities and appropriate metrics.

Zheng, Yihua↗
NASA NTRS2002

Dose and dose rate effects of whole-body proton-irradiation on lymphocyte blastogenesis and hematological variables: part II

The goal of part II of this study was to evaluate functional characteristics of leukocytes and circulating blood cell parameters after whole-body proton irradiation at varying doses and at low- and high-dose-rates (LDR and HDR, respectively). C57BL/6 mice (n=51) were irradiated and euthanized at 4 days post-exposure for assay. Significant radiation dose- (but not dose-rate-) dependent decreases were observed in splenocyte responses to T and B cell mitogens when compared to sham-irradiated controls (P<0.001). Spontaneous blastogenesis, also significantly dose-dependent, was increased in both blood and spleen (P<0.001). Red blood cell counts, hemoglobin concentration, and hematocrit were decreased in a dose-dependent manner (P<0.05), whereas thrombocyte numbers were only slightly affected. Comparison of proton- and gamma-irradiated groups (both receiving 3 Gy at HDR) showed a higher level of spontaneous blastogenesis in blood leukocytes and a lower splenocyte response to concanavalin A following proton irradiation (P<0.05). There were no dose rate effects. Collectively, the data demonstrate that the measurements in blood and spleen were largely dependent upon the total dose of proton radiation and that an 80-fold difference in the dose rate was not a significant factor. A difference, however, was found between protons and gamma-rays in the degree of change induced in some of the measurements.

Non-NASA Center↗
DOE OSTI2022

A transcriptome software comparison for the analyses of treatments expected to give subtle gene expression responses

Background: In this comparative study we evaluate the performance of four software tools: DNAstar-D (DESeq2), DNAstar-E (edgeR), CLC Genomics and Partek Flow for identification of differentially expressed genes (DEGs) using a transcriptome of E. coli. The RNA-seq data are from the effect of below-background radiation 5.5 nGy total dose (0.2nGy/hr) on E. coli grown shielded from natural radiation 655 m below ground in a pre-World War II steel vault. The gene expression response to three supplemented sources of radiation designed to mimic natural background, 1952 – 5720 nGy in total dose (71–208 nGy/hr), are compared to this “radiation-deprived” treatment. In addition, RNA-seq data of Caenorhabditis elegans nematode from similar radiation treatments was analyzed by three of the software packages. Results: In E. coli, the four software programs identified one of the supplementary sources of radiation (KCl) to evoke about 5 times more transcribed genes than the minus-radiation treatment (69–114 differentially expressed genes, DEGs), and so the rest of the analyses used this KCl vs “Minus” comparison. After imposing a 30-read minimum cutoff, one of the DNAStar options shared two of the three steps (mapping, normalization, and statistic) with Partek Flow (they both used median of ratios to normalize and the DESeq2 statistical package), and these two programs identified the highest number of DEGs in common with each other (53). In contrast, when the programs used different approaches in each of the three steps, between 31 and 40 DEGs were found in common. Regarding the extent of expression differences, three of the four programs gave high fold-change results (15–178 fold), but one (DNAstar’s DESeq2) resulted in more conservative fold-changes (1.5–3.5). In a parallel study comparing three qPCR commercial validation software programs, these programs also gave variable results as to which genes were significantly regulated. Similarly, the C. elegans analysis showed exaggerated fold-changes in CLC and DNAstar’s edgeR while DNAstar-D was more conservative. Conclusions: Regarding the extent of expression (fold-change), and considering the subtlety of the very low level radiation treatments, in E. coli three of the four programs gave what we consider exaggerated fold-change results (15 – 178 fold), but one (DNAstar’s DESeq2) gave more realistic fold-changes (1.5–3.5). When RT-qPCR validation comparisons to transcriptome results were carried out, they supported the more conservative DNAstar-D’s expression results. When another model organism’s (nematode) response to these radiation differences was similarly analyzed, DNAstar-D also resulted in the most conservative expression patterns. Therefore, we would propose DESeq2 (“DNAstar-D”) as an appropriate software tool for differential gene expression studies for treatments expected to give subtle transcriptome responses.

59 BASIC BIOLOGICAL SCIENCES↗
NASA NTRS1983

Microcircuit radiation effects databank

Radiation test data submitted by many testers is collated to serve as a reference for engineers who are concerned with and have some knowledge of the effects of the natural radiation environment on microcircuits. Total dose damage information and single event upset cross sections, i.e., the probability of a soft error (bit flip) or of a hard error (latchup) are presented.

Source record↗
NASA NTRS1990

A brief survey of radiation effects on polymer dielectrics

Future space power needs are extrapolated to be at least three to four orders of magnitude more than is currently available. This long-term reliable power will be required on missions such as the Space Station, Pathfinder, Space Plane, and high-powered satellites, and for defense. Electrical insulation and dielectrics are the key electrical materials needed to support these power systems, where a single-point system failure could prove catastrophic or even fatal for the whole mission. Therefore, the impact of radiation, an environmental stress, on the properties and performance of insulation and dielectrics must be understood. The influence of radiation on polymer dielectrics, the insulating materials most commonly used for power transmission and storage, is reviewed. The effects of the type of radiation, dose, rate, and total exposure on the key electrical, mechanical, and physical properties of polymer dielectrics are described and explained.

Laghari, Javaid R.↗
NASA NTRS2001

Overview of Non-Volatile Testing and Screening Methods

Testing methods for memories and non-volatile memories have become increasingly sophisticated as they become denser and more complex. High frequency and faster rewrite times as well as smaller feature sizes have led to many testing challenges. This paper outlines several testing issues posed by novel memories and approaches to testing for radiation and reliability effects. We discuss methods for measurements of Total Ionizing Dose (TID).

Irom, Farokh↗
NASA NTRS2001

Total dose performance of radiation hardened voltage regulators and references

Total dose test of commercially available radiation hardened bipolar voltage regulators and references show reduced sensitivity to dose rate and varying sensitivity to bias under pressure. Behavior of critical parameters in different dose rate and bias conditions is compared and the impact to hardness assurance methodology is discussed.

radiation total dose low dose rate bias effects re↗
NASA NTRS2011

Investigation of the Semicoa SCF9550 and the International Rectifier IRHM57260SE for Single-Event Gate Rapture and Single-Event Burnout : NASA Electronic Parts and Packaging (NEPP) Program Office of Safety and Mission Assurance

Single-event-effect test results for hi-rel total-dose-hardened power MOSFETs are presented in this report. TheSCF9550 from Semicoa and the IRHM57260SE from International Rectifier were tested to NASA test condition/standards and requirements.The IRHM57260SE performed much better when compared to previous testing. These initial results confirm that parts from the Temecula line are marginally comparable to the El Segundo line. The SCF9550 from Semicoa was also tested and represents the initial parts offering from this vendor. Both parts experienced single-event gate rupture (SEGR) and single-event burnout (SEB). All of the SEGR was from gate to drain.

Single Event Gate Rupture↗