Fabrication and encapsulation of transistors and computation of voltage capability and current gain Second quarterly report, Oct. - Dec. 1965
Fabrication and encapsulation of epitaxial surface transistor
EPITAXIAL DEPOSITION↗
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Design development, fabrication, and delivery of improved MOS transistors Third quarterly progress report, 22 Nov. 1965 - 21 Feb. 1966
Instability, high threshold voltage and gamma radiation sensitivity of metal-oxide-silicon transistors
SILICON TRANSISTOR↗
Design, develop, fabricate and deliver silicon power transistors Final report, Jun. 1963 - Oct. 1965
Specifications, design, and fabrication of high power, high speed silicon transistors on large area epitaxial slices
DIFFUSION BONDING↗
Study to investigate the effects of ionizing radiation on transistor surfaces Second quarterly report, Oct. 1 - Dec. 31, 1965
Effects of electrical bias during irradiation on radiation damage and of different measurement conditions on magnitude of degradation in N-P-N PLANAR transistors
N-P-N JUNCTION↗
Development and fabrication of a high power silicon switching transistor Final report, Aug. 1965 - Apr. 1966
High-current, low-voltage silicon switching transistor redesigned for obtaining lowest possible saturation drop
SWITCHING ELEMENT↗
Research to determine failure modes for transistors
Failure modes of diffused planar transistors under stress screening and life testing
FAILURE MODE↗
Effects of electron radiation on unijunction transistors
Electron radiation effects on terminal characteristics of unijunction transistors
JUNCTION TRANSISTOR↗
Design, development, fabrication, and delivery of improved MOS transistors Final report, 21 May 1965 - 21 May 1966
Instability, high threshold voltage, and gamma radiation in MOS transistors
INSTABILITY↗
Study to investigate the effects of ionizing radiation on transistor surfaces Third quarterly report, period ending, 31 Mar. 1966
Ionizing radiation effects on transistor surfaces
TRANSISTOR↗
Synthesis of current-switching circuits with cell matching using p-n-p and n-p-n transistors
Logical circuit for analysis of switching circuits with cell matching using p-n-p and n-p-n transistors
TRANSISTOR↗
Transistor design effects on radiation resistance
Silicon transistor design effects on radiation resistance, and radiation response of majority carrier device
CARRIER↗
Study to investigate the effects of ionizing radiation on transistor surfaces Fourth quarterly report, period ending Jun. 30, 1966
Ionizing radiation effects on transistor surfaces in vacuum or ambient nitrogen environment
SURFACE EROSION↗
Damage to field-effect transistors under 22 and 128 MeV proton bombardments
Damage to field effect transistors by proton irradiation
FIELD EFFECT TRANSISTOR /FET/↗
Degradation of transistor performance due to passage of small-Coulomb high-voltage surges
High voltage pulse causing beta degradation and junction resistance drop in transistor
ELECTRIC PULSE↗
Mechanisms of ionizing radiation surface effects on transistors.
Ionizing radiation effects on silicon planar bipolar transistors to determine degradation mechanisms
IONIZING RADIATION↗
Compound diode-transistor structure for temperature compensation.
Compound diode-transistor structure with current gain invariant with temperature
DIODE↗
High power switching transistor Final report
Design theory and fabrication procedure for n-p-n 100 ampere silicon switching transistor
SILICON TRANSISTOR↗