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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 217 records · Page 12

Infrared transmissive concentrated photovoltaics for coupling solar electric energy conversion to solar thermal energy utilization

The use of photovoltaic (PV) cells to convert solar energy to electricity is becoming increasingly prevalent; however, there are still significant limitations associated with the widespread adoption of PV cells for electricity needs. There is a clear need for a high efficiency solar power system that supplies electricity at a competitive cost and that provides for an on-demand supply of electricity as well as energy storage. By combining aspects of concentrated solar power and concentrated photovoltaics, the present invention provides a device that enables the conversion of sunlight to electricity at very high efficiencies and that enables the transmission of thermal energy to heat storage devices for later use. The disclosed device enables transmissive CPV through the use of a multijunction PV cell mounted on a transparent base. The use of a multijunction cell allows for highly efficient absorption of light above the bandgap of the lowest bandgap subcell. The transparent base permits transmission of a high percentage of the remaining light below the bandgap of the lowest bandgap subcell. The present invention also discloses a method of generating electricity through the use of a transmissive CPV device. Sunlight is concentrated onto one or more surfaces of the device. High energy light is absorbed by a multijunction PV cell and converted directly to electricity, while low energy light is transmitted through the device into a thermal storage device, which may then be coupled to a heat engine to generate dispatchable electricity.

Escarra, Matthew David↗

Inverted Metamorphic AlGaInAs/GaInAs Tandem Thermophotovoltaic Cell Designed for Thermal Energy Grid Storage Application

We demonstrate an inverted metamorphic multijunction (IMM) photovoltaic cell comprising lattice-mismatched 1.2 eV AlGaInAs and 1.0 eV GaInAs junctions optimized for high-temperature thermophotovoltaic (TPV) applications. This device differs from traditional IMM solar cells because the mismatched junctions are grown at a single lattice constant. This architecture enables removal of the compositionally graded buffer that otherwise filters light from the junctions below and absorbs sub-bandgap light via free-carrier absorption. Sub-bandgap absorption dramatically reduces the efficiency of TPV systems using high reflectivity cells to enable band edge spectrum filtering. Three components required development to enable this device: (1) a lattice-mismatched 1.2 eV AlGaInAs junction, (2) a metamorphic contact layer grown after the graded buffer, and (3) a transparent tunnel junction that sits in front of the 1.0 eV GaInAs junction. Growth conditions that minimize oxygen defect incorporation maximize AlGaInAs cell quality, enabling a 0.41 V bandgap open circuit voltage offset at 22 mA/cm2 under AM1.5D. A mismatched GaInAs:Se layer is developed as a low resistance contact. Lastly, we develop a GaAsSb:C/GaInP:Se tunnel junction suitable for high-power densities with more transparency than the GaAsSb:C/GaInAs:Se structure used in past IMM cells. We characterize the tandem device under a high-intensity spectrum that approximates the emission from a 2150°C blackbody radiator and deduce a projected ideal TPV efficiency of 39.9% at ~30% of the blackbody irradiance and 36% ideal TPV efficiency under the full 118 W/cm2 irradiance. Improvements to the back-surface reflectivity and series resistance are expected to increase the ideal TPV efficiency well above 40%.

25 ENERGY STORAGE↗

Transparent conductive coatings

Thin film transparent conductors are discussed. Materials with electrical conductivity and optical transparency are highly desirable in many optoelectronic applications including photovoltaics. Certain binary oxide semiconductors such as tin oxide (SnO2) and indium oxide (In2O3) offer much better performance tradeoff in optoelectronics as well as better mechanical and chemical stability than thin semitransparent films. These thin-film transparent conductors (TC) are essentially wide-bandgap degenerate semiconductors - invariably n-type - and hence are transparent to sub-bandgap (visible) radiation while affording high electrical conductivity due to the large free electron concentration. The principal performance characteristics of TC's are, of course, electrical conductivity and optical transmission. The TC's have a refractive index of around 2.0 and hence act as very efficient antireflection coatings. For using TC's in surface barrier solar cells, the photovoltaic barrier is of utmost importance and so the work function or electron affinity of the TC is also a very important material parameter. Fabrication processes are discussed.

Ashok, S.↗

From Design to Device: Challenges and Opportunities in Computational Discovery of p -Type Transparent Conductors

A high-performance p -type transparent conductor (TC) does not yet exist but could lead to advances in a wide range of optoelectronic applications and enable new architectures for, e.g., next-generation photovoltaic (PV) devices. High-throughput computational material screenings have been a promising approach to filter databases and identify new p -type TC candidates and some of these predictions have been experimentally validated. However, most of these predicted candidates do not have experimentally achieved properties on par with n -type TCs used in solar cells and therefore have not yet been used in commercial devices. Thus, there is still a significant divide between transforming predictions into results that are actually achievable in the laboratory and an even greater lag in scaling predicted materials into functional devices. In this perspective, we outline some of the major disconnects in this materials discovery process—from scaling computational predictions into synthesizable crystals and thin films in the laboratory to scaling laboratory-grown films into real-world solar devices—and share insights to inform future strategies for TC discovery and design. Published by the American Physical Society 2024

14 SOLAR ENERGY↗

High efficiency small molecule tandem photovoltaic devices

A high efficiency small molecule tandem solar cell is disclosed. The tandem cell may include a first subcell comprising a first photoactive region and a second subcell comprising a second photoactive region. The first and second photoactive regions are designed to minimize spectral overlap and maximize photocurrent. The device may further include an interconnecting layer, disposed between the first subcell and the second subcell, that is at least substantially transparent.

Forrest, Stephen R.↗

Semi Transparent Three-Dimensional Macroporous Quaternary Oxynitride Photoanodes for Photoelectrochemical Water Oxidation

Semi transparent three-dimensional macroporous (3DM) photoanodes based on quaternary oxynitrides have the potential to simultaneously realize superior light harvesting and efficient charge transfer in a tandem photoelectrochemical (PEC) cell. A 3DM CaTaO 2 N photoanode was prepared for the first time on a GaN/Al 2 O 3 substrate via a chemical route, and it exhibits a high transmittance of >60% in the wide solar spectrum and a photoresponse onset at −0.3 V versus the reversible hydrogen electrode (V RHE ) under simulated solar illumination. In particular, a plateau photocurrent density of 0.21 mA cm –2 was achieved at a low potential of 0.4 V RHE , which was 1.6-fold and more than 50-fold higher than a two-dimensional macroporous (2DM) CaTaO 2 N/GaN/Al 2 O 3 photoanode and a conventional particle-based CaTaO 2 N/GaN/Al 2 O 3 photoanode, respectively. The bicontinuous, interconnected pore structure within this 3DM film can improve charge carrier separation and collection by reducing the average diffusion distance for minority carriers toward the electrolyte. Optical measurements and simulations verified the enhanced sunlight harvesting in the 3DM photoanode, which was ascribed to the concentrated distribution of the electric field and multiple scattering. Furthermore, this study provides guidance for future synthesis of highly efficient semitransparent 3DM quaternary oxynitride-based photoanodes for a tandem PEC device.

Layers↗

Optical Analysis of Transparent Polymeric Material Exposed to Simulated Space Environment

Many innovations in spacecraft power and propulsion have been recently tested at NASA, particularly in non-chemical propulsion. One improvement in solar array technology is solar concentration using thin polymer film Fresnel lenses. Weight and cost savings were proven with the Solar Concentrator Arrays with Refractive Linear Element Technology (SCARLET)-II array on NASA's Deep Space I spacecraft. The Fresnel lens concentrates solar energy onto high-efficiency solar cells, decreasing the area of solar cells needed for power. Continued efficiency of this power system relies on the thin film's durability in the space environment and maintaining transmission in the 300 - 1000 nm bandwidth. Various polymeric materials have been tested for use in solar concentrators, including Lexan(TM), polyethylene terephthalate (PET), several formulations of Tefzel(Tm) and Teflon(TM), and DC 93-500, the material selected for SCARLET-II. Also tested were several innovative materials including Langley Research Center's CPI and CP2 polymers and atomic oxygen- resistant polymers developed by Triton Systems, Inc. The Environmental Effects Group of the Marshall Space Flight Center's Materials, Processes, and Manufacturing Department exposed these materials to simulated space environment and evaluated them for any change in optical transmission. Samples were exposed to a minimum of 1000 equivalent Sun hours of near-UV radiation (250 - 400 nm wavelength). Materials that appeared robust after near-UV exposure were then exposed to charged particle radiation equivalent to a five-year dose in geosynchronous orbit. These exposures were performed in MSFC's Combined Environmental Effects Test Chamber, a unique facility with the capability to expose materials simultaneously or sequentially to protons, low-energy electrons, high-energy electrons, near UV radiation and vacuum UV radiation. Reflectance measurements can be made on the samples in vacuum. Prolonged exposure to the space environment will decrease the polymer film's transmission and thus reduce the conversion efficiency. A method was developed to normalize the transmission loss and thus rank the materials according to their tolerance to space environmental exposure. Spectral results and the material ranking according to transmission loss are presented.

Edwards, David L.↗

Electrochemical Reactions Under Reverse Bias Create Additional Mobile Ions That Enable Hole Tunneling in Metal Halide Perovskite Diodes

Gradual reverse-bias breakdown in metal-halide perovskite diodes and solar cells is thought to originate from hole tunneling through steep bands in an ionic depletion region near the electron-transport layer after positively charged iodine vacancies accumulate near the hole-transport layer (HTL). However, typical reported mobile-ion concentrations near 1 x 10^17 cm-3 are too small to quantitatively explain significant tunneling-current densities and (Zener) breakdown observed near -5 V. Here, we show that inferred mobile-ion concentrations increase by more than 100x, to over 1 x 10^18cm-3 , within just 3 min of reverse bias at -6.0 V in p-i-n perovskite diodes. We attribute this increase to iodide oxidation and coupled iodine vacancy creation that must be balanced by reduction reactions near the HTL. Sub-optimal HTL coverage leads to direct contact between the transparent conducting electrode and perovskite, facilitates reduction events, enables the creation of even larger inferred mobile-ion concentrations (~1 x 10^19cm-3 ), and leads to faster degradation under reverse bias. This explains previous work that showed increased breakdown voltages and improved reverse-bias stability by implementing thick, uniform HTLs.

14 SOLAR ENERGY↗

Application of thick-film technology to solar cell fabrication

Several uses of thick-film technology in solar cell fabrication are discussed. Wrap-around contacts are obtained by first printing and firing a dielectric over the edge and subsequently applying a low-firing temperature conductor. Interconnection of cells into arrays can be achieved by printing and co-firing thick-film pastes, soldering, or with heat-curing conductive epoxies on low-cost substrates. Despite ongoing research, printed (thick) film vitreous protective coatings do not yet offer sufficient optical uniformity and transparency for use on silicon. Ohmic contacts on n- and p-type silicon are considered.

Field, M. B.↗

Microstructure and Composition of Passivating Interfaces in Silicon Heterojunction Solar Modules Weathered in Different Climates

Sanyo/Panasonic patented silicon heterojunction with intrinsic thin layer (HIT) solar cells in the 1990's, which demonstrated world record photovoltaic (PV) efficiency around 2014 and inspired the newer generations of silicon heterojunction technology (SHJ) as well as the current world record back-contact PV cell designs. The high-quality passivation strategy, utilizing ultra-thin layers of hydrogenated amorphous silicon (a-Si:H), leads to high voltages and long carrier lifetimes, but these qualities may degrade over time as the modules operate outdoors. Here, we investigate local microstructure and composition at the interface layers of cells from HIT modules weathered in a hot, humid climate (Florida, USA) and temperate climate (Colorado, USA) for 10 years. We employ a comprehensive set of high-resolution electron microscopy imaging and spectroscopy to directly resolve structure and composition in these cells down to the nanoscale. We show features such as alignment of the In2O3 transparent conducting oxide and a-Si:H layers on the textured c-Si facets, interfacial oxidation at the a-Si:H/c-Si and In2O3/a-Si:H interfaces, and twinned c-Si resulting from epitaxial growth into the a-Si:H layer. Our results raise potential degradation mechanisms in these outdoor-weathered modules, but the root cause of electrical loss remains uncertain due to the very small changes in aged samples. This study shows that many atomic scale features at the In2O3/a-Si:H/c-Si interfaces are surprisingly robust, and the electrical losses with aging may either be attributed to other pathways or be very sensitive to the subtle chemical and microstructural features observed here.

14 SOLAR ENERGY↗

Approaching the Radiative Efficiency Limit in Perovskite Solar Cells with Scalable Defect Passivation and Selective Contacts

This award aimed to enable perovskite solar cells to approach the radiative efficiency limit in scalable manufacturing environments by controlling recombination losses, especially surface recombination losses at electrodes and interfaces. The project combined organic molecular synthesis, perovskite film processing and characterization, and spectroscopic tool development for probing recombination centers. The project ultimately achieved record-low surface recombination velocity (SRV) in mixed cation methylammonium-free perovskite thin films, demonstrated photoluminescence as an effective process metrology tool to optimizing processing of device stacks, and showed that the aminopropyltrimethoxysilane (APTMS) is suitable for passivating the exposed perovskite interface in p-i-n stack devices. The project used combinations of phosphonic acids to modify the transparent conducting oxide and APTMS to passivate the perovskite/electron transport layer interface, thereby demonstrating reduction of SRVs in both partial and full device stacks. The project showed concomitant improvements in device performance, and demonstrated that APTMS passivation was compatible with large area coating of external stakeholder perovskite films using both scalable solution and vapor methods. Notably, the project also supplied surface passivating materials to a number of other US based and SETO-funded teams.

14 SOLAR ENERGY↗

Using hole injection layers for decreased metastability and higher performance in Cu(In,Ga)Se 2 devices

In this work, modifications to the buffer structure in Cu(In,Ga)Se 2 (CIGS) solar cells are examined in terms of power conversion efficiency and metastability. Varying amounts of thin hole-injecting layers are introduced at different locations in the CIGS/Zn(O,S) device structure. It is found that such layers simultaneously increase performance and decrease metastability. The most effective variant produces devices without metastability and with higher efficiency than the CdS-only controls. The most effective location for hole injection is found to be between the Zn(O,S) buffer and the transparent conductor. At this location, passivation of the CIGS surface is not a function of the hole injection layer, and thus a variety of materials with appropriate band-edge energies should achieve the same purpose.

36 MATERIALS SCIENCE↗

Efficient solar cells using all-organic nanocrystalline networks

An optoelectronic device and a method of fabricating a photosensitive optoelectronic device includes depositing a first organic semiconductor material on a first electrode to form a continuous first layer; depositing a layer of a second organic semiconductor material on the first layer to form a discontinuous second layer, portions of the first layer remaining exposed; and depositing the first organic semiconductor material on the second layer to form a discontinuous third layer, portions of at least the second layer remaining exposed. The depositing of the first and second organic semiconductor materials are alternated a number of times until a final layer of the second organic material is added to form a continuous layer. A second electrode is deposited over this final layer. One of the first electrode and the second electrode is transparent, and the first organic semiconductor material is one or more donor-type materials or one or more acceptor-type materials relative to second organic semiconductor material, which is one or more materials of the other material type.

Sun, Kai↗

Multi-junction Thin-film Solar Cells on Flexible Substrates for Space Power

The ultimate objective of the thin-film program at NASA GRC is development of a 20 percent AM0 thin-film device technology with high power/weight ratio. Several approaches are outlined to improve overall device efficiency and power/weight ratio. One approach involves the use of very lightweight flexible substrates such as polyimides (i.e., Kapton(Trademark)) or metal foil. Also, a compound semiconductor tandem device structure that can meet this objective is proposed and simulated using Analysis of Microelectronic and Photonic Structures (AMPS). AMPS modeling of current devices in tandem format indicate that AM0 efficiencies near 20 percent can be achieved. And with improvements in materials, efficiencies approaching 25 percent are achievable. Several important technical issues need to be resolved to realize these complex devices: development of a wide bandgap material with good electronic properties, development of transparent contacts, and targeting a 2-terminal device structure (with more complicated processing and tunnel junction) or 4-terminal device. Recent progress in the NASA GRC program is outlined.

Hepp, Aloysius F.↗

Assessing corrosion problems in photovoltaic cells via electrochemical stress testing

A series of accelerated electrochemical experiments to study the degradation properties of polyvinylbutyral-encapsulated silicon solar cells has been carried out. The cells' electrical performance with silk screen-silver and nickel-solder contacts was evaluated. The degradation mechanism was shown to be electrochemical corrosion of the cell contacts; metallization elements migrate into the encapsulating material, which acts as an ionic conducting medium. The corrosion products form a conductive path which results in a gradual loss of the insulation characteristics of the encapsulant. The precipitation of corrosion products in the encapsulant also contributes to its discoloration which in turn leads to a reduction in its transparency and the consequent optical loss. Delamination of the encapsulating layers could be attributed to electrochemical gas evolution reactions. The usefulness of the testing technique in qualitatively establishing a reliability difference between metallizations and antireflection coating types is demonstrated.

Shalaby, H.↗

Radioisotope thermal photovoltaic application of the GaSb solar cell

An examination of a RTVP (radioisotopic thermophotovoltaic) conceptual design has shown a high potential for power densities well above those achievable with radioisotopic thermoelectric generator (RTG) systems. An efficiency of 14.4 percent and system specific power of 9.25 watts/kg were predicted for a system with sixteen GPHS (general purpose heat source) sources operating at 1100 C. The models also showed a 500 watt system power by the strontium-90 isotope at 1200 C at an efficiency of 17.0 percent and a system specific power of 11.8 watts/kg. The key to this level of performance is a high-quality photovoltaic cell with narrow bandgap and a reflective rear contact. Recent work at Boeing on GaSb cells and transparent back GaAs cells indicate that such a cell is well within reach.

Morgan, M. D.↗

Investigation of Off-Stoichiometry in Ternary Nitrides by EDS and HRTEM

We demonstrate an inverted metamorphic multijunction (IMM) photovoltaic cell comprising lattice-mismatched 1.2 eV AlGaInAs and 1.0 eV GaInAs junctions optimized for high-temperature thermophotovoltaic (TPV) applications. This device differs from traditional IMM solar cells because the mismatched junctions are grown at a single lattice constant. This architecture enables removal of the compositionally graded buffer which otherwise filters light from the junctions below and absorbs sub-bandgap light via free-carrier absorption. Sub-bandgap absorption dramatically reduces the efficiency of TPV systems using high reflectivity cells to enable bandedge spectrum filtering. Three components required development to enable this device: 1) a lattice-mismatched 1.2 eV AlGaInAs junction, 2) a metamorphic contact layer grown after the graded buffer, and 3) a transparent tunnel junction that sits in front of the 1.0 eV GaInAs junction. Growth conditions that minimize oxygen defect incorporation maximize AlGaInAs cell quality, enabling a 0.41 V bandgap open circuit voltage offset at 22 mA/cm2 under AM1.5D. A mismatched GaInAs:Se layer is developed as a low resistance contact. Lastly we develop a GaAsSb:C/GaInP:Se tunnel junction suitable for high-power densities with more transparency than the GaAsSb:C/GaInP:Se structure used in past IMM cells. We characterize the tandem device under a high-intensity spectrum that approximates the emission from a 2150 °C blackbody radiator and deduce a projected ideal TPV efficiency of 39.9% at ~30% of the blackbody irradiance, and 36% ideal TPV efficiency under the full 118 W/cm2 irradiance. Improvements to the back-surface reflectivity and series resistance are expected to increase the ideal TPV efficiency well above 40%.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗