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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 217 records · Page 12
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

16.52% Efficiency All-Polymer Solar Cells with High Tolerance of the Photoactive Layer Thickness

All-polymer solar cells (all-PSCs) have drawn growing attention and achieved tremendous progress recently, but their power conversion efficiency (PCE) still lags behind small-molecule-acceptor (SMA)-based PSCs due to the relative difficulty on morphology control of polymer photoactive blends. Here, in this work, low-cost PTQ10 is introduced as a second polymer donor (a third component) into the PM6:PY-IT blend to finely tune the energy-level matching and microscopic morphology of the polymer blend photoactive layer. The addition of PTQ10 decreases the π–π stacking distance, and increases the π–π stacking coherence length and the ordered face-on molecular packing orientation, which improves the charge separation and transport in the photoactive layer. Moreover, the deeper highest occupied molecular orbital energy level of the PTQ10 polymer donor than PM6 leads to higher open-circuit voltage of the ternary all-PSCs. As a result, a PCE of 16.52% is achieved for ternary all-PSCs, which is one of the highest PCEs for all-PSCs. In addition, the ternary devices exhibit a high tolerance of the photoactive layer thickness with high PCEs of 15.27% and 13.91% at photoactive layer thickness of ≈205 and ≈306 nm, respectively, which are the highest PCEs so far for all-PSCs with a thick photoactive layer.

14 SOLAR ENERGY↗
DOE OSTI2022

Novel Real- Time EMT- TS Modeling Architecture for Feeder Blackstart Simulations

This paper presents the development and benchmarking of a novel real-time electromagnetic-transient and transient-stability (EMT-TS) modeling architecture for distribution feeder restoration studies. The work presents for the first time in the literature a real-time EMT-TS testbed in which the grid-forming unit is simulated in EMT domain, operating as the slack bus of the phasor domain while including unbalanced voltage conditions. To evaluate the performance and limitations of the proposed model, an equivalent EMT testbed is developed to serve as a benchmark. First, the co-simulation framework and the domain coupling methodology are introduced. Next, the steady state operation of the EMT-TS and EMT models are matched. Then, tests are conducted to analyze the transient performance of the proposed EMT-TS model when compared to its EMT benchmark. Results reveal that when utilizing a battery energy storage system (BESS) as the grid-forming unit, the EMT-TS testbed can maintain high accuracy for typical load steps.

Paduani, Victor↗
NASA NTRS1991

Progress toward the development of dual junction GaAs/Ge solar cells

Large area GaAs/Ge cells offer substantial promise for increasing the power output from existing silicon solar array designs and for providing an enabled technology for missions hitherto impossible using silicon. Single junction GaAs/Ge cells offer substantial advantages in both size, weight, and cost compared to GaAs cells but the efficiency is limited to approximately 19.2 to 20 percent AMO. The thermal absorptance of GaAs/Ge cells is also worse than GaAs/GaAs cells (0.88 vs 0.81 typ.) due to the absorption in the Ge substrate. On the other hand dual junction GaAs/Ge cells offer efficiencies up to ultimately 24 percent AMO in sizes up to 8 x 8 cm but there are still technological issues remaining to achieve current matching in the GaAs and Ge cells. This can be achieved through tuned antireflection (AR) coatings, improved quality of the GaAs growth, improved quality Ge wafers and the use of a Back Surface Field (BSF)/Back Surface Reflector (BSR) in the Ge cell. Although the temperature coefficients of efficiency and voltage are higher for dual junction GaAs/Ge cells, it has been shown elsewhere that for typical 28 C cell efficiencies of 22 percent (dual junction) vs 18.5 percent (single junction) there is a positive power tradeoff up to temperatures as high as 120 C. Due to the potential ease of fabrication of GaAs/Ge dual junction cells there is likely to be only a small cost differential compared to single junction cells.

Lillington, D. R.↗
NASA NTRS1996

InGaAsSb/GaSb thermophotovoltaic cells

AstroPower is developing InGaAsSb thermophotovoltaic (TPV) devices. This photovoltaic cell is a tvo-layer epitaxial InGaAsSb structure formed by liquid-phase epitaxy on a GaSb substrate The (direct) bandgap of the In(1-x)Ga(x)As(1-y)Sb(y) alloy is 0.50 to 0.55 eV, depending on its exact alloy composition (x,y); and is closely lattice-matched to the GaSb substrate. The use of the quaternary alloy as opposed to a ternary alloy -- such as, for example, InGaAs/InP -- permits low bandgap devices optimized for 1000 to 1500 C thermal sources with, at the same time, near-exact lattice matching to the GaSb substrate. Lattice-matching is important since even a small degree of lattice mismatch degrades device performance and reliability and increases processing complexity. Internal quantum efficiencies as high as 95% have been measured at a wavelength of 2 microns. At 1 micron wavelengths, internal quantum efficiencies of 55% have been observed. The open-circuit voltage at currents of 0.3 A/cm(exp 2) is 0.220 volts and 0.260 V for current densities of 2 A/cm(exp 2). Fill factors of 56% have been measured at 60 mA/cm(exp 2). However as current density increases there is some decrease in fill factor. Our results to date snow that the GaSb-based quaternary compounds provide a viable and high performance energy conversion solution for thermophotovoltaic systems operating with 1000 to 1500 C source temperatures.

Shellenbarger, Z. A.↗
DOE OSTI2023

Sub-quarter micrometer periodically poled Al 0.68 Sc 0.32 N for ultra-wideband photonics and acoustic devices

In this study, we demonstrate the ability of polarity inversion of sputtered aluminum scandium nitride thin films through post-fabrication processes with domain widths as small as 220 nm at a periodicity of 440 nm. An approach using photo- and electron-beam lithography to generate sub-quarter micrometer feature size with adjustable duty cycle through a lift-off process is presented. Here, the film with a coercive field $E_c^+$ of 5.35 MV/cm was exercised first with a 1 kHz triangular double bipolar wave and ultimately poled with a 0.5 kHz double monopolar wave using a Radiant Precision Premier II tester. The metal polar (M-polar) and nitrogen polar (N-polar) domains were identified and characterized through potassium hydroxide wet etching as well as piezoresponse force microscopy (PFM). Well-distinguished boundaries between the oppositely polarized domain regions were confirmed through the phase diagram of the PFM results. The relationship between the electrode width, poling voltage, and domain growth was experimentally studied and statistically analyzed, where 7.96 nm/V domain width broadening vs escalating poling voltage was observed. This method produces extremely high domain spatial resolution in III-nitride materials via poling and is transferable to a CMOS-compatible photolithography process. The spatial resolution of the periodically poled Al 0.68 Sc 0.32 N is suitable for second-harmonic generation of deep ultraviolet through quasi-phase-matching and RF MEMS operating in the X-Band spectrum.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Hybrid Modeling of Three-Phase Grid-Supporting Inverters for Dynamic Studies

Grid technologies connected by power electronic converter (PEC) interfaces continually implement grid support functions mandated by grid codes and standards. The transition to converter-based generation demands precise PEC models to assess system dynamics, which have been previously overlooked in conventional power systems. This study proposes a hybrid method for analyzing grid-connected three-phase PEC dynamics with the IEEE standard 1547-2018 Volt-VAr mode that combines physics and data-driven techniques. The physics model reflects the PEC’s internal behavior, whereas the data-driven modeling technique evaluates the grid-supporting capabilities of the smart PEC. The system identification approach is used to generate dynamic PEC models based on changing grid voltage and measured current injected into the grid by the PEC. In the Volt-VAr support mode, a detailed topological model including switches is utilized to compare the goodness-of-fit of the extracted hybrid dynamic model. The results demonstrate that the hybrid PEC model in the Volt-VAr mode accurately matches the dynamics with the topological model.

Subedi, Sunil↗
NASA NTRS1971

Hollow cathode, quasi-steady MPD arc

A quasi-steady MPD accelerator has been operated with four different hollow cathodes over a power range from 5 kilowatts to 5 megawatts. The absolute level of the argon mass flow, as well as the fractional division of the flow between the cathode and the six standard chamber injectors, is varied over a range of 1 to 12 grams per second. For a fixed total current, it is observed that the voltage increases monotonically with mass flow rate, compared to the usual experience with solid cathodes where the voltage decreases with mass flow rate. For a fixed percentage of flow through the cathode, each hollow cathode configuration displays a minimum impedance at a particular value of the total mass flow. It is asserted that in order to keep the discharge inside the hollow cathode the magnetic pressure and gasdynamic pressure have to match inside the cavity.

Parmentier, N.↗
DOE OSTI2021

Effects of sample bias on adhesion of magnetron sputtered Cr coatings on SiC

Swelling of SiC at 300 C due to in-service neutron irradiation causes tensile residual stresses in coatings which are expected to adversely affect the performance of coated SiC composite fuel cladding for light water reactors. Matching the coating swelling with the substrate, a solution common for thermal expansion, is not practical in the case of neutron irradiation. Biasing samples during magnetron sputtering deposition induces compressive residual stress which may counteract this. In this study, chromium coatings were deposited on SiC by DC magnetron sputtering with no external heating at bias voltages of –50V, –75V, and –100V. The effects of the bias voltage on morphology, residual stress, microstrain, texture, and adhesion are shown. The low deposition temperature resulted in the coating microstructure evolution following an energetic particle bombardment dominated trend. Additionally, at the two lower bias voltages knock-on implantation dominated increasing the residual stress and microstrain while at the highest bias voltage, thermal spike migration allowed for defect relaxation. When the knock-on induced compressive residual stress exceeded 0.8 GPa microcrack formation in the SiC substrate decreased coating adhesion. While no microcracks formed at the lowest bias voltage, insufficient atomic mobility during coating growth lead to voids forming in the coating. A balance is needed to form void-free coatings that have high compressive residual stress.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Poling thin-film x-cut lithium niobate for quasi-phase matching with sub-micrometer periodicity

Quasi-phase-matched grating structures in lithium niobate waveguides with sub-micrometer periodicities will benefit the development of short-wavelength nonlinear optical devices. Here, we report on the reproducible formation of periodically poled domains in x-cut single-crystalline thin-film lithium niobate with periodicities as short as 600 nm. Shaped single-voltage poling pulses were applied to electrode structures that were fabricated by a combination of electron-beam and direct-writing laser lithography. Evidence of successful poling with good quality was obtained through second-harmonic microscopy and piezoresponse force microscopy imaging. For the sub-micrometer period structures, we observed patterns with a double periodicity formed by domain interactions and features with sizes <200 nm.

Zhao, Jie (ORCID:0000000306230125)↗
DOE OSTI2026

Fast Growth of Ga2O3 on Highly Offcut (100)-Oriented Substrates

Beta-Ga2O3 has emerged as a leading candidate for next-generation power electronics, radio frequency (RF) switches, and extreme environment electronics due to a wide band gap (4.6 - 4.9 eV), high dopability (approximately 40 meV activation energy for an isolated silicon donor), and melt growth characteristics resulting in commercially available 4-inch substrates and commercial demonstrations of 6-inch substrates by multiple techniques. The (100) surface of Ga2O3 is highly desirable from a device and epitaxy standpoint - bulk growth of (100) material is more scalable than (010), the surface is nearly lattice-matched to p-type partner NiO, and Al2O3 incorporates at higher concentrations without phase separation. More importantly, the impact ionization coefficients along the [100] direction are low, leading to the highest possible critical fields. This is advantageous compared to the current state of the art, (001), due to reduced surface defects and increased possible breakdown voltage. However, the epitaxial growth rate on (100) surfaces is less than 10% of other faces due to weak bonding and favorable desorption, and on-axis (100) growth easily forms twin domains. Recent demonstrations have shown growth rate improvements from 0.4 nm/min to 1.5 nm/min by growing on (100) wafers that are offcut 6 degrees in the -c direction. These films show step-flow growth from (20-1) step-edges and high electron mobility due to suppressed twins. Despite these exciting results, offcuts greater than 6 degrees have not been explored due to the waste associated with grinding and polishing large offcuts. In this talk we will discuss the molecular beam epitaxy (MBE) growth and properties of Beta-Ga2O3 grown on (100) substrates offcut in the -c direction up to 13.4 degrees. These large offcuts are enabled by edge-fed film-defined growth (EFG) where the offcut is grown into the surface by pulling the crystal through the EFG die with the seed crystal rotated by the desired offcut angle. We will demonstrate that 13.4 degrees offcut substrates still exhibit a terraced (100) surface, and that a >10x increase (>5 nm/min) in growth rate is achieved. As previously reported on lower offcuts, we observe reversal of substrate twin domains around the (001) direction at the substrate-epilayer interface. We will discuss electrical properties including record-low (by MBE) unintentional doping densities of < 5E15 cm-3 and critical breakdown field in Schottky barrier diodes comparable with state-of-the-art (001) Ga2O3 without edge termination.

36 MATERIALS SCIENCE↗
NASA NTRSDate not supplied

Edge Wear of the Advanced Electric Propulsion System Pole Covers

This work summarizes a wear test focused on characterizing the erosion of the edges and side walls of the 12-kW Advanced Electric Propulsion System (AEPS) pole covers as well as the impact of magnetic field strength on component erosion for operation at a discharge voltage of 600 V. Testing was performed with the AEPS Engineering Test Unit 2 (ETU-2) thruster and accumulated approximately 325 hours of operation at the 600 V/12 kW condition with the magnetic field strength set to 75% of its nominal value. Thruster performance was invariant throughout the wear test for all thruster throttle conditions and matched previous measurements at the nominal magnetic field strength. Contrary to past results, inner front pole cover erosion rates were invariant to magnetic field strength at the 600 V/12 kW condition and no erosion was measured on the outer front pole cover. The erosion profile of the downstream inner front pole cover faces was continuous across the cover, indicating no significant change in erosion processes at the pole cover edges. Side wall erosion was only detected on the cathode-facing surfaces of the inner front pole cover and was equal in magnitude to the rates measured on the adjacent downstream edges. Taken together, these results suggest that erosion of the pole cover edges and sidewalls is driven by cathode-borne ions and will ultimately not impact AEPS life estimates.

Hall thrusters↗
NASA NTRS2008

Progress on the Use of Combined Analog and Photon Counting Detection for Raman Lidar

The Atmospheric Radiation Measurement (ARM) program Raman Lidar (CARL) was upgraded in 2004 with a new data system that provides simultaneous measurements of both the photomultiplier analog output voltage and photon counts. The so-called merge value added procedure (VAP) was developed to combine the analog and count-rate signals into a single signal with improved dynamic range. Earlier versions of this VAP tended to cause unacceptably large biases in the water vapor mixing ratio during the daytime as a result of improper matching between the analog and count-rate signals in the presence of elevated solar background levels. We recently identified several problems and tested a modified version of the merge VAP by comparing profiles of water vapor mixing ratio derived from CARL with simultaneous sonde data over a six month period. We show that the modified merge VAP significantly reduces the daytime bias, and results in mean differences that are within approximately 1% for both nighttime and daytime measurements.

Newsom, Rob↗
DOE OSTI2022

Nondestructive Evaluation (NDE) of Cable Anomalies using Frequency Domain Reflectometry (FDR) and Spread Spectrum Time Domain Reflectometry (SSTDR)

This report presents a comparative assessment of the performance of frequency domain reflectometry (FDR) and spread spectrum time domain reflectometry (SSTDR) in detecting a wide range of electrical cable anomalies. All tests and results reported herein were performed at the PNNL Accelerated and Real-Time Environmental Nodal Assessment (ARENA) cable and motor test bed. The primary objective of this work was to evaluate the effectiveness of SSTDR, a fledgling cable monitoring technique that shows promise for application in online monitoring of energized cable systems, against FDR, an offline technique widely employed in the nuclear power plant (NPP) industry. FDR tests are becoming more widely used in nuclear power plant cable aging management and test programs – particularly for low voltage cables. FDR capabilities for these kinds of tests have been reported by PNNL and others. The FDR test is performed on de-energized cables by connecting the FDR instrument to two of the cable conductors, or one conductor and the shield. A broad band low voltage (< 5 V) chirp is introduced in the cable, and any reflected response is captured in the frequency domain. The captured reflection is then processed by performing an inverse Fourier transform to a time domain response which can then be converted to a distance response based on the cable velocity of propagation (VoP). SSTDR measurements are functionally similar to FDR measurements in that a broad-band voltage signal composed of a square or sine wave modulated pseudo-random sequence of chips (< 5 volts), is injected onto one of the cable conductors. The injected signal will experience partial energy reflection and transmission at each impedance discontinuity along the transmission line. Any reflected response is detected by computing a cross-correlation between the reflected signals and a delayed copy of the incident SSTDR signal. the time delay for the reflected signal to experience the best matched correlation with the incident signal, indicates the travel time for the signal to reach a change in impedance. By knowing this time delay and velocity of propagation (VoP) of the signal, one can compute the physical distance. A big advantage that SSTDR measurements have over other methods is the ability to be connected to energized or live wires (currently up to 1kV) thereby enabling online monitoring of cables. SSTDR has been used successfully in several applications, e.g., aircraft, rail, and photovoltaic systems. In this work FDR and SSTDR cable assessment techniques were used to characterize a variety of cable anomalies and faults including: (1) Presence or absence of a motor; (2) Ground faults and short circuit faults; (3) Moist environments and water ingress faults; (4) Accelerated thermal aging. Both shielded and non-shielded cables were evaluated in this report. Offline measurements were made using FDR and online measurements were made by SSTDR for a range of test scenarios. Based on the results across all cable anomalies evaluated in this study, FDR displayed high sensitivity towards cable condition assessment, while SSTDR showed promise for future application in monitoring NPP cable systems. However, further developments are suggested to improve the resolution and sensitivity of SSTDR towards faults and anomalies in low voltage cables.rt presents a comparative

42 ENGINEERING↗
DOE OSTI2026

Photophysical Properties and Phase Behavior of Ultrawide Photovoltaic Bandgap Cesium–Lead-Based Triple Halide Perovskites

Metal halide perovskite films in the top cell of triple-junction tandems require bandgaps around 2.0 eV to achieve current matching, assuming that the middle absorbing layer is the commonly used FAPbI 3 composition and the bottom cell has a bandgap around 1.1 eV. Unfortunately, mixed organic/inorganic metal halide perovskites that have the necessary Br content to reach a bandgap of 2.0 eV segregate into iodine-rich and bromine-rich phases under illumination, limiting their obtainable voltage. Previous reports have shown improved photostability using either Cs-based inorganic compositions or Cl incorporation on the X-site. Here, we investigate the inorganic triple halide compositional space CsPb­(I 1–x–y Br y Cl x ) 3 where bandgaps near 2.0 eV are expected based on the knowledge that CsPbI2Br has a bandgap of 1.90 eV. Incorporation of Cl occurs readily for x ≤ 0.07–0.10 within perovskites with a Br content of 0.3 ≤ y ≤ 0.42. When x >0.1, X-ray diffraction and photoluminescence (PL) measurements indicate that multiple compositional phases form. We hypothesize that the variable sizes of the three halide ions are not supported within the rigid Cs lattice, resulting in the formation of multiple compositional phases. The photoluminescence quantum yield of the single-phase compositional space–CsPb­(I 1–x–y Br y Cl x ) 3 where x ≤ 0.07was typically 0.001–0.004%, most likely as a result of a high defect density, including mobile iodine species. PL light-soaking measurements of many perovskite compositions with bandgaps in the range of 1.89–2.05 eV demonstrate that phase segregation occurs when initial bandgaps are above 1.95 eV regardless of halide content: indicating further iodide oxidation and corresponding migration under illumination. The conclusion is that further compositional or additive engineering is necessary for the development of inorganic triple halide compositions that accomplish the elusive goal of fabricating high-quality and photostable 2.0 eV films for use in multijunction tandems.

Electrical conductivity↗
DOE OSTI2021

Electromechanics of lipid-modulated gating of potassium channels

Experimental studies reveal that the anionic lipid phosphatidic acid (POPA), non-phospholipid cholesterol, and cationic lipid DOTAP inhibit the gating of voltage-sensitive potassium (Kv) channels. In this work, we develop a continuum electromechanical model to investigate the interaction of these lipids with the ion channel. Our model suggests that: (i) POPA lipids may restrict the vertical motion of the voltage-sensor domain through direct electrostatic interactions; (ii) cholesterol may oppose the radial motion of the pore domain of the channel by increasing the mechanical rigidity of the membrane; and (iii) DOTAP can reduce the effect of electrostatic forces by regulating the dielectric constant at the channel–lipid interface. The electromechanical model predictions for the three lipid types match well with the experimental observations and provide mechanistic insights into lipid-dependent gating of Kv channels.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS1995

InGaAsSb/GaSb thermophotovoltaic cells

AstroPower is developing InGaAsSb thermophotovoltaic (TPV) devices. This photovoltaic cell is a two-layer epitaxial InGaAsSb structure formed by liquid-phase epitaxy on a GaSb substrate. The (direct) bandgap of the In(1 - x)Ga(x)As(1 -y)Sb(y) alloy is 0.50 to 0.55 eV, depending on its exact alloy composition (x, y); and is closely lattice-matched to the GaSb substrate The use of the quaternary alloy, as opposed to a ternary alloy - such as, for example, InGaAs/InP - permits low bandgap devices optimized for 1000 to 1500 C thermal sources with, with at the time, near-exact lattice matching to the GaSb substrate. Lattice-matching is important since even a small degree of lattice mismatch degrades device performance and reliability and increases processing complexity. For bandgaps of 0.52 eV,Fo internal quantum efficiencies as high as 95% have been measured at a wavelength of 2 microns. At 1 micron wavelengths, internal quantum efficiencies of 55% have been observed. The open-circuit voltage at currents of 0.3 A/sq cm is 0.220 volts and 0.260 V for current densities of 2 A/sq cm. Fill factors of 56% have also been measured. These preliminary results lead to the conclusion that the GaSb-based quaternary compounds provide a viable and high performance energy conversion solution for thermophotovoltaic systems operating with 1000 to 1500 C source temperatures.

Mauk, M. G.↗
NASA NTRS1978

Method and apparatus for measuring minority carrier lifetimes and bulk diffusion length in P-N junction solar cells

Carrier lifetimes and bulk diffusion length are qualitatively measured as a means for qualification of a P-N junction photovoltaic solar cell. High frequency (blue) monochromatic light pulses and low-frequency (red) monochromatic light pulses were alternately applied to the cell while it was irradiated by light from a solar simulator, and synchronously displaying the derivative of the output voltage of the cell on an oscilloscope. The output voltage is a measure of the lifetimes of the minority carriers (holes) in the diffused N layer and majority carriers (electrons) in the bulk P material, and of the diffusion length of the bulk silicon. By connecting a reference cell in this manner with a test cell to be tested in reverse parallel, the display of a test cell that matches the reference cell will be a substantially zero output.

Vonroos, O. H.↗