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At least 217 records · Page 12

Wideband Array for C, X, and Ku-Band Applications with 5.3:1 Bandwidth

Planar arrays that exploit strong intentional coupling between elements have allowed for very wide bandwidths in low-profile configurations. However, such designs also require complex impedance matching networks that must also be very compact. For many space applications, typically occurring at C-, X-, Ku-, and most recently at Ka-band, such designs require specialized and expensive fabrication techniques. To address this issue, a novel ultra-wideband array is presented, using a simplified feed network to reduce fabrication cost. The array operates from 3.5-18.5 GHz with VSWR less than 2.4 at broadside, and is of very low profile, having a total height of lambda/10 at the lowest frequency of operation. Validation is provided using a 64-element prototype array, fabricated using common Printed Circuit Board (PCB) technology. The low size, weight, and cost of this array make it attractive for space-borne applications.

X-↗

Performance Dependences of Multiplication Layer Thickness for InP/InGaAs Avalanche Photodiodes Based on Time Domain Modeling

InP/InGaAs avalanche photodiodes (APDs) are being widely utilized in optical receivers for modern long haul and high bit-rate optical fiber communication systems. The separate absorption, grading, charge, and multiplication (SAGCM) structure is an important design consideration for APDs with high performance characteristics. Time domain modeling techniques have been previously developed to provide better understanding and optimize design issues by saving time and cost for the APD research and development. In this work, performance dependences on multiplication layer thickness have been investigated by time domain modeling. These performance characteristics include breakdown field and breakdown voltage, multiplication gain, excess noise factor, frequency response and bandwidth etc. The simulations are performed versus various multiplication layer thicknesses with certain fixed values for the areal charge sheet density whereas the values for the other structure and material parameters are kept unchanged. The frequency response is obtained from the impulse response by fast Fourier transformation. The modeling results are presented and discussed, and design considerations, especially for high speed operation at 10 Gbit/s, are further analyzed.

Xiao, Yegao↗

MMIC DHBT Common-Base Amplifier for 172 GHz

Figure 1 shows a single-stage monolithic microwave integrated circuit (MMIC) power amplifier in which the gain element is a double-heterojunction bipolar transistor (DHBT) connected in common-base configuration. This amplifier, which has been demonstrated to function well at a frequency of 172 GHz, is part of a continuing effort to develop compact, efficient amplifiers for scientific instrumentation, wide-band communication systems, and radar systems that will operate at frequencies up to and beyond 180 GHz. The transistor is fabricated from a layered structure formed by molecular beam epitaxy in the InP/InGaAs material system. A highly doped InGaAs base layer and a collector layer are fabricated from the layered structure in a triple mesa process. The transistor includes two separate emitter fingers, each having dimensions of 0.8 by 12 m. The common-base configuration was chosen for its high maximum stable gain in the frequency band of interest. The input-matching network is designed for high bandwidth. The output of the transistor is matched to a load line for maximum saturated output power under large-signal conditions, rather than being matched for maximum gain under small-signal conditions. In a test at a frequency of 172 GHz, the amplifier was found to generate an output power of 7.5 mW, with approximately 5 dB of large-signal gain (see Figure 2). Moreover, the amplifier exhibited a peak small-signal gain of 7 dB at a frequency of 176 GHz. This performance of this MMIC single-stage amplifier containing only a single transistor represents a significant advance in the state of the art, in that it rivals the 170-GHz performance of a prior MMIC three-stage, four-transistor amplifier. [The prior amplifier was reported in "MMIC HEMT Power Amplifier for 140 to 170 GHz" (NPO-30127), NASA Tech Briefs, Vol. 27, No. 11 (November 2003), page 49.] This amplifier is the first heterojunction- bipolar-transistor (HBT) amplifier built for medium power operation in this frequency band. The performance of the amplifier as measured in the aforementioned tests suggests that InP/InGaAs HBTs may be superior to high-electron-mobility (HEMT) transistors in that the HBTs may offer more gain per stage and more output power per transistor.

Paidi, Vamsi↗

Hybrid integrated optic modules for real-time signal processing

The most recent progress on four relatively new hybrid integrated optic device modules in LiNbO3 waveguides and one in YIG/GGG waveguide that are currently being studied are discussed. The five hybrid modules include a time-integrating acoustooptic correlator, a channel waveguide acoustooptic frequency shifter/modulator, an electrooptic channel waveguide total internal reflection moculator/switch, an electrooptic analog-to-digital converter using a Fabry-Perot modulator array, and a noncollinear magnetooptic modulator using magnetostatic surface waves. All of these devices possess the desirable characteristics of very large bandwidth (GHz or higher), very small substrate size along the optical path (typically 1.5 cm or less), single-mode optical propagation, and low drive power requirement. The devices utilize either acoustooptic, electrooptic or magnetooptic effects in planar or channel waveguides and, therefore, act as efficient interface devices between a light wave and temporal signals. Major areas of application lie in wideband multichannel optical real-time signal processing and communications. Some of the specific applications include spectral analysis and correlation of radio frequency (RF) signals, fiber-optic sensing, optical computing and multiport switching/routing, and analog-to-digital conversion of wide RF signals.

Tsai, C. S.↗

A 90 GHz Amplifier Assembled Using a Bump-Bonded InP-Based HEMT

We report on the performance of a novel W-band amplifier fabricated utilizing very compact bump bonds. We bump-bonded a high-speed, low-noise InP high electron mobility transistor (HEMT) onto a separately fabricated passive circuit having a GaAs substrate. The compact bumps and small chip size were used for efficient coupling and maximum circuit design flexibility. This new quasi-monolithic millimeter-wave integrated circuit (Q-MMIC) amplifier exhibits a peak gain of 5.8 dB at approx. 90 GHz and a 3 dB bandwidth of greater than 25%. To our knowledge, this is the highest frequency amplifier assembled using bump-bonded technology. Our bump-bonding technique is a useful alternative to the high cost of monolithic millimeter-wave integrated circuits (MMIC's). Effects of the bumps on the circuit appear to be minimal. We used the simple matching circuit for demonstrating the technology - future circuits would have all of the elements (resistors, via holes, bias lines, etc.) included 'in conventional MMIC's. Our design in different from other investigators' efforts in that the bumps are only 8 microns thick by 15 microns wide. The bump sizes were sufficiently small that the devices, originally designed for W-band hybrid circuits, could be bonded without alteration. Figure 3 shows the measured and simulated magnitude of S-parameters from 85-120 GHz, of the InP HEMT bump-bonded to the low noise amplifier (LNA) passive. The maximum gain is 5.8 dB at approx. 90 GHz, and gain extends to 117 GHz. Measurement of a single device (without matching networks) shows approx. 1 dB of gain at 90 GHz. The measured gain of the amplifier agrees well with the design in the center of the measurement band, and the agreement falls off at the band edges. Since no accommodation for the bump-bonding parasitics was made in the design, the result implies that the parasitic elements associated with the bonding itself do not dominate the performance of the LNA circuit. It should be noted that this amplifier was designed for good noise performance, which is why the input and output return losses are poorer than one would expect for an amplifier simply matched for gain. However, noise performance has not been measured at this time. While the agreement between modeled vs. experimental data is not exact, the data prove that bump-bonded technology can be used for amplifiers at frequencies at least as high as 100 GHz. JPL is pursuing this technology as a way to economically and quickly incorporate the best available HEMTs into a circuit with all of the reliability and circuit design flexibility offered by MMIC technology. We are currently using the technology to fabricate 4-stage, wide-band, W-band LNA's. We have also performed pull and shear tests which show that the bump bonds are sufficiently robust for any anticipated application.

Pinsukanjana, Paul R.↗

The Development of Si and SiGe Technologies for Microwave and Millimeter-Wave Integrated Circuits

Historically, microwave technology was developed by military and space agencies from around the world to satisfy their unique radar, communication, and science applications. Throughout this development phase, the sole goal was to improve the performance of the microwave circuits and components comprising the systems. For example, power amplifiers with output powers of several watts over broad bandwidths, low noise amplifiers with noise figures as low as 3 dB at 94 GHz, stable oscillators with low noise characteristics and high output power, and electronically steerable antennas were required. In addition, the reliability of the systems had to be increased because of the high monetary and human cost if a failure occurred. To achieve these goals, industry, academia and the government agencies supporting them chose to develop technologies with the greatest possibility of surpassing the state of the art performance. Thus, Si, which was already widely used for digital circuits but had material characteristics that were perceived to limit its high frequency performance, was bypassed for a progression of devices starting with GaAs Metal Semiconductor Field Effect Transistors (MESFETs) and ending with InP Pseudomorphic High Electron Mobility Transistors (PHEMTs). For each new material or device structure, the electron mobility increased, and therefore, the high frequency characteristics of the device were improved. In addition, ultra small geometry lithographic processes were developed to reduce the gate length to 0.1 pm which further increases the cutoff frequency. The resulting devices had excellent performance through the millimeter-wave spectrum.

Ponchak, George E.↗

Cyclops - The JPL AIRSAR synoptic processor

Capability for synoptic, or wide-area, SAR processing has been added to the JPL Aircraft Synthetic Aperture Radar System (AIRSAR) by means of the CYCLOPS synoptic processor. Polarimetric requirements have been relaxed so that a single node in the system can process SAR data with a throughput of three channels in 3.75 hours. Each channel consists of five minutes of full-range-swath data chosen from the twelve available AIRSAR polarization channels. Processed data consists of 16-look, 16-meter resolution imagery with a swath size of 60 km. The processor fully utilizes the available Doppler bandwidth and provides processing options for range migration correction, zero-Doppler deskew, frequency registration, and radiometric correction. The detected-power output product is scaled so as to provide sigma zero radiometric calibration.

Taylor, Victor B.↗

Calibration of the Oscillating Screen Viscometer

We have devised a calibration procedure for the oscillating screen viscometer which can provide the accuracy needed for the flight measurement of viscosity near the liquid-vapor critical point of xenon. The procedure, which makes use of the viscometer's wide bandwidth and hydrodynamic similarity, allows the viscometer to be self-calibrating. To demonstrate the validity of this procedure we measured the oscillator's transfer function under a wide variety of conditions. We obtained data using CO2 at temperatures spanning a temperature range of 35 K and densities varying by a factor of 165, thereby encountering viscosity variations as great as 50%. In contrast the flight experiment will be performed over a temperature range of 29 K and at only a single density, and the viscosity is expected to change by less than 40%. The measurements show that, after excluding data above 10 Hz (where frequency-dependent corrections are poorly modeled) and making a plausible adjustment to the viscosity value used at high density, the viscometer's behavior is fully consistent with the use of hydrodynamic similarity for calibration. Achieving this agreement required understanding a 1% anelastic effect present in the oscillator's torsion fiber.

Berg, Robert F.↗

Overview of the Optical Communications Demonstrator

The Optical Communications Demonstrator is a laboratory-based lasercom demonstration instrument designed to validate effective beacon acquisition, high bandwidth tracking, precision beam pointing, and point ahead compensation functions. The instrument is designed using an array detector for both spatial acquisition and high bandwidth tracking, and a fiber coupled laser transmitter. The array detector tracking concept provides wide field of view acquisition as well as high update rate using a single output channel device. At the same time, it permits effective platform jitter compensation and point ahead control using only one steering mirror. The use of fiber coupled transmitter further modularizes transmitter design and de-couples the thermal management problem. The reduction in design complexity can lead to a reduced system cost and an improved system reliability. Furthermore, it can permit the implementation of a new generation of lasercom instruments capable of realizing the inherent advantages of optical frequency communication systems.

laser↗

Wideband Single-Crystal Transducer for Bone Characterization

The microgravity conditions of space travel result in unique physiological demands on the human body. In particular, the absence of the continual mechanical stresses on the skeletal system that are present on Earth cause the bones to decalcify. Trabecular structure decreases in thickness and increases in spacing, resulting in decreased bone strength and increased risk of injury. Thus, monitoring bone health is a high priority for long-term space travel. A single probe covering all frequency bands of interest would be ideal for such measurements, and this would also minimize storage space and eliminate the complexity of integrating multiple probes. This invention is an ultrasound transducer for the structural characterization of bone. Such characterization measures features of reflected and transmitted ultrasound signals, and correlates these signals with bone structure metrics such as bone mineral density, trabecular spacing, and thickness, etc. The techniques used to determine these various metrics require measurements over a broad range of ultrasound frequencies, and therefore, complete characterization requires the use of several narrowband transducers. This is a single transducer capable of making these measurements in all the required frequency bands. The device achieves this capability through a unique combination of a broadband piezoelectric material; a design incorporating multiple resonator sizes with distinct, overlapping frequency spectra; and a micromachining process for producing the multiple-resonator pattern with common electrode surfaces between the resonators. This device consists of a pattern of resonator bars with common electrodes that is wrapped around a central mandrel such that the radiating faces of the resonators are coplanar and can be simultaneously applied to the sample to be measured. The device operates as both a source and receiver of acoustic energy. It is operated by connection to an electronic system capable of both providing an excitation signal to the transducer and amplifying the signal received from the transducer. The excitation signal may be either a wide-bandwidth signal to excite the transducer across its entire operational spectrum, or a narrow-bandwidth signal optimized for a particular measurement technique. The transducer face is applied to the skin covering the bone to be characterized, and may be operated in through transmission mode using two transducers, or in pulse-echo mode.

Liang, Yu↗

The Dielectric Constant at P-Band for Salinity from 0 to 150 pss

Measurements have been made at P-band (0.707 GHz) to construct a model for the dielectric constant of sea water and extend the model for the dielectric constant to high salinity (50-150 pss). The measurements are part of research to develop a model for the dielectric constant suitable for future wide-bandwidth remote sensing of salinity and for application to water bodies such as the Great Salt Lake with salinity significantly above that found in the open ocean. Measurements have been made at temperatures from 2 to 30 °C and salinity from 0 to 138 pss. The data have been fit to a Debye model for the dielectric constant with a single resonance as has been employed at L-band (1.413 GHz) where remote sensing of salinity is currently done. Comparison with contemporary models developed from data at L-band indicates that the L-band model and new P-band model do well at both frequencies for salinity less than 50 pss but at higher values of salinity the L-band models diverge from the data. The data has also been used to test at high salinity the mathematical relationship between salinity and conductivity which is the basis for the practical salinity scale (pss).

Dielectric Constant↗

Wavelength Scaling of Widely-Tunable Terahertz Quantum-Cascade Metasurface Lasers

Terahertz (THz) external-cavity lasers based on quantum-cascade (QC) metasurfaces are emerging as widely-tunable, single-mode sources with the potential to cover the 1--6 THz range in discrete bands with milliwatt-level output power. By operating on an ultra-short cavity with a length on the order of the wavelength, the QC vertical-external-cavity surface-emitting-laser (VECSEL) architecture enables continuous, broadband tuning while producing high quality beam patterns and scalable power output. The methods and challenges for designing the metasurface at different frequencies are discussed. As the QC-VECSEL is scaled below 2 THz, the primary challenges are reduced gain from the QC active region, increased metasurface quality factor and its effect on tunable bandwidth, and larger power consumption due to a correspondingly scaled metasurface area. At frequencies above 4.5 THz, challenges arise from a reduced metasurface quality factor and the excess absorption that occurs from proximity to the Reststrahlen band. The results of four different devices — with center frequencies 1.8 THz, 2.8 THz, 3.5 THz, and 4.5 THz — are reported. Each device demonstrated at least 200 GHz of continuous single-mode tuning, with the largest being 650 GHz around 3.5 THz. The limitations of the tuning range are well modeled by a Fabry-Pérot cavity which accounts for the reflection phase of the metasurface and the effect of the metasurface quality factor on laser threshold. Lastly, the effect of different output couplers on device performance is studied, demonstrating a significant trade-off between the slope efficiency and tuning bandwidth.

47 OTHER INSTRUMENTATION↗

Non-propulsive aerodynamic noise

In the first part of the paper, the contribution of airframe noise to total aircraft noise on approach is assessed for a large current technology transport and for the same airframe powered with bypass ratio 10 engines with an additional 5 dB noise suppression applied to the fan and turbine noise sources. The airframe noise of the envisioned advanced subsonic transport is 2 EPNdB less than the largest contributor to the total aircraft noise, the fan inlet. The noise impact of the airframe noise, as measured by noise contour area, is 1/4 that of fan noise. Further fan noise reduction efforts should not view airframe noise as an absolute noise floor. In the second part of the paper, the results from one recent cavity noise wind tunnel experiment is reported. A cavity of dimensions 11.25 in. (28.58 cm) long, 2.5 in. (6.35 cm) wide, and variable depth was tested in the Mach number range of .20 through .90. Reynolds number varied from 5 to 100 million per foot (16 to 328 million per meter). The 1/d ratio was varied from 4.4 to 20.0. The model was tested at yaw angles from 0 to 15 degrees. In general, the deeper the cavity, the greater the amplitude of the acoustic tones. Reynolds number appeared to have little effect on acoustic tone amplitudes. Tone amplitude and bandwidth changed with Mach number. The effect of yaw on acoustic tones varied with Reynolds number, Mach number, 1/h, and mode number. At Mach number 0.90, increased yaw shifted the tone frequencies of the higher modal frequencies to lower frequencies. As cavity depth decreased, the effect of yaw decreased.

Willshire, William L., Jr.↗

Use of the 37-38 GHz and 40-40.5 GHz Ka-bands for Deep Space Communications

This paper covers a wide variety of issues associated with the implementation and use of these frequency bands for deep space communications. Performance issues, such as ground station pointing stability, ground antenna gain, antenna pattern, and propagation effects such as due to atmospheric, charged-particle and space loss at 37 GHz, will be addressed in comparison to the 32 GHz Ka-band deep space allocation. Issues with the use of and competition for this spectrum also will be covered. The state of the hardware developed (or proposed) for operating in this frequency band will be covered from the standpoint of the prospects for achieving higher data rates that could be accommodated in the available bandwidth. Hardware areas to be explored include modulators, digital-to-analog converters, filters, power amplifiers, receivers, and antennas. The potential users of the frequency band will be explored as well as their anticipated methods to achieve the potential high data rates and the implications of the competition for bandwidth.

telecommunications↗

A reflected-wave ruby maser with K-band tuning range and large instantaneous bandwidth

A novel maser concept is outlined and a unique design described which permits wide bandwidth and waveguide tuning range by employing four stages cascaded via cryogenically cooled circulators. Theoretical considerations for gain, bandwidth, gain ripple, and noise temperature are included. Operated on a closed-cycle helium refrigerator with a superconducting persistence-mode magnet, the four-stage amplifier is tunable from 18.3 to 26.6 GHz with 30 dB of net gain and achieves 240 MHz of 3-dB bandwidth near the center of this band. The measured noise temperature is 13 + or - 2 K referred to the room-temperature input flange. Applications are foreseen utilizing cooled parametric downconverters and upconverters with this amplifier at IF to extend the low-noise performance up to millimeter frequencies and down to L-band for radio astronomy and planetary spacecraft communications.

Moore, C. R.↗

A broad-band microseismometer for planetary operations

There has recently been renewed interest in the development of instrumentation for making measurements on the surface of Mars. This is due to the Mars Environmental Survey (MESUR) Mission, for which approximately 16 small, long-lived (2-10 years), relatively inexpensive surface stations will be deployed in a planet-wide network. This will allow the investigation of processes (such as seismology and meteorology) which require the simultaneous measurement of phenomena at many widely spaced locations on the surface over a considerable length of time. Due to the large number of vehicles involved, the mass, power, and cost of the payload will be severely constrained. A seismometer has been identified as one of the highest priority instruments in the MESUR straw-man payload. The requirements for an effective seismic experiment on Mars place a number of constraints on any viable sensor design. First, a large number of sensors must be deployed in a long-lived global network in order to be able to locate many events reliably, provide good spatial sampling of the interior, and increase the probability of seismic detection in the event of localized seismicity and/or high attenuation. From a practical standpoint, this means that individual surface stations will necessarily be constrained in terms of cost, mass, and power. Landing and thermal control systems will probably be simple, in order to minimize cost, resulting in large impact accelerations and wide daily and seasonal thermal swings. The level of seismic noise will determine the maximum usable sensitivity for seismometer. Unfortunately, the ambient seismic noise level for Mars is not well known. However lunar seismic noise levels are several orders of magnitude below that of the Earth. Sensitivities on the order of 10(exp -11)g over a bandwidth of .04 to 20 Hz are thought to be necessary to fulfill the science objectives for a seimometer placed on the Martian surface. Silicon micromachined sensor technology offers techniques for the fabrication of monolithic, robust, compact, lower power and mass accelerometers. Conventional micro-machined accelerometers have been developed and are commercially available for high frequency and large acceleration measurements. The new seismometer we are developing incorporates certain principles of conventional silicon micromachined accelerometer technology. However, currently available silicon micromachined sensors offer inadequate sensitivity and bandwidth for the Mars seismometer application. Our implementation of an advanced silicon micromachined seismometer is based on principles recently developed at JPL for high-sensitivity position sensor technology.

Banerdt, W. B.↗

High-Efficiency Wide-Band Suspended Patch Antenna Array Demonstrated

A four-element, suspended patch antenna array that has a parasitic patch layer on top and is electromagnetically coupled to an inverted microstrip feed for linear polarization was demonstrated at K-band frequencies. The layout of the array is shown in the following figure. The antenna has the following advantages over conventional microstrip antennas: 1. The inverted microstrip has lower losses, which result in higher gain and efficiency. 2. The inverted microstrip is easier to fabricate, because the strip width is wider for a given characteristic impedance. 3. A conventional proximity-coupled patch antenna requires a substrate for the feed and a superstrate for the patch. However, the inverted microstrip-fed patch antenna makes use of a single substrate and, hence, is lightweight and inexpensive. 4. Electromagnetic coupling results in a wider bandwidth.

Simons, Rainee N.↗

Ultra-flat and long-lived plasmons in a strongly correlated oxide

Plasmons in strongly correlated systems are attracting considerable attention due to their unconventional behavior caused by electronic correlation effects. Recently, flat plasmons with nearly dispersionless frequency-wave vector relations have drawn significant interest because of their intriguing physical origin and promising applications. However, these flat plasmons exist primarily in low-dimensional materials with limited wave vector magnitudes (q< ~0.7 Å –1 ). Here, we show that long-lived flat plasmons can propagate up to ~1.2 Å –1 in α-Ti 2 O 3 , a strongly correlated three-dimensional Mott-insulator, with an ultra-small energy fluctuation (<40 meV). The strong correlation effect renormalizes the electronic bands near Fermi level with a small bandwidth, which is responsible for the flat plasmons in α-Ti 2 O 3 . Moreover, these flat plasmons are not affected by Landau damping over a wide range of wave vectors (q < ~1.2 Å –1 ) due to symmetry constrains on the electron wavefunctions. Our work provides a strategy for exploring flat plasmons in strongly correlated systems, which in turn may give rise to novel plasmonic devices in which flat and long-lived plasmons are desirable.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗