300 deg K annealing of electron damage in lithium-doped silicon.
Lithium doped silcon acceptor concentration resulting from electron irradiation damage decreased by annealing at 300 degrees K
Stannard, J. E.↗
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Annealing of electron damage in lithium-doped silicon at 300 K
Annealing of electron damage in lithium-doped silicon measured using Hall effect
Stannard, J. E.↗
Production and annealing of defects in Li-diffused silicon after 30-MeV electron irradiation at 300 K
Production and annealing of defects in lithium diffused silicon after electron irradiation
Berger, R. A.↗
On some annealing characteristics of heavy ions tracks in silicate minerals
Annealing characteristics of heavy ion tracks in silicate minerals
Maurette, M.↗
EPR study of isothermal annealing kinetics of the F center in KC1
KCl F centers isothermal annealing kinetics using EPR, considering electron irradiation levels effects
May, C. E.↗
Anneal behavior of defects in ion-implanted GaAs diodes
Ion-implanted GaAs junction diodes anneal behavior and defect nature
Hunsperger, R. G.↗
Oxidation of Co-10 w/o Cr interrupted by vacuum annealing
Vacuum annealing treatments effect on oxidation rate of Co-Cr alloy at high temperatures
Hed, A. Z.↗
Kinetic equation of annealing in lithium- diffused silicon
Annealing properties of radiation damage in lithium-diffused silicon, formulating kinetic equation to describe processes associated with recovery and instability
Fang, P. H.↗
Fractionation effect in annealing of radiation damaged silicon
Electron radiation damaged Si, investigating p type defect concentration effect on isochronal temperature in annealing by fractionation experiment
Fang, P. H.↗
EPR study of isothermal annealing kinetics of chromium ions in X-ray irradiated ruby
Chromium ions isothermal annealing kinetics in X ray irradiated ruby crystals, using EPR method
Liu, D. C.↗
Determination of weldability and elevated temperatures stability of refractory metal alloys. 4 - Post weld annealing studies of T-3
Post weld annealing for stabilizing tungsten alloy weld structure
Lessmann, G. G.↗
Introduction and annealing of damage in lithium-diffused silicon
Dependence on lithium of introduction and annealing of neutron and electron produced damage in lithium-diffused bulk silicon
Horiye, H.↗
Thermal conductivity, electrical resistivity, and thermopower of aerospace alloys from 4 to 300 K. 3: Annealed Inconel 718
Determination of thermal conductivity, electrical resistivity, Lorentz ratio, and thermopower for annealed specimen of Inconel 718 at temperatures from 4 to 300 K
Hust, J. G.↗
Production and annealing of defects in lithium-diffused silicon after irradiation with 30-MeV electrons and fission neutrons at 300 K
Production and annealing of defects in lithium diffused bulk silicon after irradiation with 30 MeV electrons and fission neutrons at 300 K
Berger, R. A.↗
On some annealing characteristics of heavy ion tracks in silicate minerals
Heavy ion tracks in silicate minerals, using thermal annealing to identify origins
Maurette, M.↗
Dependence of defect introduction on temperature and resistivity and some long-term annealing effects
The effort reported here represents data of lithium properties in bulk-silicon samples before and after irradiation for analytical information required to characterize the interactions of lithium with radiation-induced defects in silicon. A model of the damage and recovery mechanisms in irradiated-lithium-containing solar cells is developed based on making measurements of the Hall coefficient and resistivity of samples irradiated by 1-MeV electrons. Experiments on bulk samples included Hall coefficient and resistivity measurements taken as a function of: (1) bombardment temperature, (2) resistivity, (3) fluence, (4) oxygen concentration, and (5) annealing time at temperatures from 300 to 373 K.
Brucker, G. J.↗
Radiation damage and annealing of lithium-doped silicon solar cells
Evidence has been presented that a lithium-diffused crucible-grown silicon solar cell can be made with better efficiency than the flight-quality n p 10 ohms-cm solar cell. When this lithium cell is exposed to a continuous radiation evironment at 60 C (electron spectrum from gamma rays) it has a higher power output than the N/P cell after a fluence equivalent to 1 MeV. A comparison of annealing of proton- and electron-damage in this lithium cell reveals a decidedly faster rate of recovery and higher level of recoverable power from the proton effects. Therefore, the lithium cell shows a good potential for many space missions where the proton flux is a significant fraction of the radiation field to be encountered.
Statler, R. L.↗
Radiation damage annealing kinetics
Various spectral response studies are reported that assess lithium doping effects on the recovery process of electron damaged silicon solar cells. Measurements of both the minority carrier lifetimes and the energy level spectrum of the defects are used to predict lifetime damage constants and carrier removal rates relevant to the operation of the solar lithium-doped cell and its annealing kinetics.
Dresselhaus, M. S.↗