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At least 235 records · Page 13

Thermal conductivity behavior of boron carbides

Knowledge of the thermal conductivity of boron carbides is necessary to evaluate its potential for high temperature thermoelectric energy conversion applications. The thermal diffusivity of hot pressed boron carbide B/sub 1-x/C/sub x/ samples as a function of composition, temperature and temperature cycling was measured. These data in concert with density and specific heat data yield the thermal conductivities of these materials. The results in terms of a structural model to explain the electrical transport data and novel mechanisms for thermal conduction are discussed.

Wood, C.↗

Present state of boron-carbon thermoelectric materials

Boron-carbon p-type thermoelectric materials show promise for use in advanced thermal-to-electric space power conversion systems. Here, recent data on the thermoelectric properties of boron-carbon materials, such as B9C, B13C2, B15C2, and B4C, are reviewed. In particular, attention is given to the effect of the compositional homogeneity and residual impurity content on the Seeback coefficient, electrical resistivity, and thermal conductivity of these materials. The effect of carbon content for a given level of impurity and degree of homogeneity is also discussed.

Elsner, N. B.↗

Boron and silicon - Filters for the extreme ultraviolet

Thin films of boron and silicon have been developed using electron beam deposition. The transmissions of these filters were measured from soft X-ray wavelengths to the far ultraviolet and at optical wavelengths. The boron filter transmission peaks near 66 A and the silicon filter peaks near 136 A as expected on theoretical grounds, but the extreme ultraviolet bandpass is narrower than expected. The peak transmission of these filters does not change with time, but the width of the silicon filter bandpass is reduced slightly as the filter ages.

Labov, S.↗

Thermal conductivity of boron carbides

Knowledge of the thermal conductivity of boron carbide is necessary to evaluate its potential for high-temperature thermoelectric energy conversion applications. Measurements have been conducted of the thermal diffusivity of hot-pressed boron carbide BxC samples as a function of composition (x in the range from 4 to 9), temperature (300-1700 K), and temperature cycling. These data, in concert with density and specific-heat data, yield the thermal conductivities of these materials. The results are discussed in terms of a structural model that has been previously advanced to explain the electronic transport data. Some novel mechanisms for thermal conduction are briefly discussed.

Wood, C.↗

Growth of crystals of several boron-carbon compositions by chemical vapor deposition

Boron-carbon compounds have been deposited by the flow of carbon tetrachloride and boron trichloride, in the presence of a large excess of hydrogen, over a graphite surface maintained at 1000-1300 C. Deposits were formed on either an RF-heated disc or a tube or insert heated by a resistance furnace. Crystalline materials ranging in composition from B2C to B17C have been obtained.

Kevill, D. N.↗

Analysis of boron carbides' electronic structure

The electronic properties of boron-rich icosahedral clusters were studied as a means of understanding the electronic structure of the icosahedral borides such as boron carbide. A lower bound was estimated on bipolaron formation energies in B12 and B11C icosahedra, and the associated distortions. While the magnitude of the distortion associated with bipolaron formation is similar in both cases, the calculated formation energies differ greatly, formation being much more favorable on B11C icosahedra. The stable positions of a divalent atom relative to an icosahedral borane was also investigated, with the result that a stable energy minimum was found when the atom is at the center of the borane, internal to the B12 cage. If incorporation of dopant atoms into B12 cages in icosahedral boride solids is feasible, novel materials might result. In addition, the normal modes of a B12H12 cluster, of the C2B10 cage in para-carborane, and of a B12 icosahedron of reduced (D sub 3d) symmetry, such as is found in the icosahedral borides, were calculated. The nature of these vibrational modes will be important in determining, for instance, the character of the electron-lattice coupling in the borides, and in analyzing the lattice contribution to the thermal conductivity.

Howard, Iris A.↗

Silicon carbide sintered body manufactured from silicon carbide powder containing boron, silicon and carbonaceous additive

A silicon carbide powder of a 5-micron grain size is mixed with 0.15 to 0.60 wt% mixture of a boron compound, i.e., boric acid, boron carbide (B4C), silicon boride (SiB4 or SiB6), aluminum boride, etc., and an aluminum compound, i.e., aluminum, aluminum oxide, aluminum hydroxide, aluminum carbide, etc., or aluminum boride (AlB2) alone, in such a proportion that the boron/aluminum atomic ratio in the sintered body becomes 0.05 to 0.25 wt% and 0.05 to 0.40 wt%, respectively, together with a carbonaceous additive to supply enough carbon to convert oxygen accompanying raw materials and additives into carbon monoxide.

Tanaka, Hidehiko↗

Boron Carbides As Thermo-electric Materials

Report reviews recent theoretical and experimental research on thermoelectric materials. Recent work with narrow-band semiconductors demonstrated possibility of relatively high thermoelectric energy-conversion efficiencies in materials withstanding high temperatures needed to attain such efficiencies. Among promising semiconductors are boron-rich borides, especially boron carbides.

Wood, Charles↗

Boron-containing organosilane polymers and ceramic materials thereof

The present invention relates to organic silicon-boron polymers which upon pyrolysis produce high-temperature ceramic materials. More particularly, it relates to the polyorganoborosilanes containing -Si-B- bonds which generate high-temperature ceramic materials (e.g., SiC, SiB4, B4C) upon thermal degradation. The process for preparing these organic silicon-boron polymer precursors are also part of the invention.

Riccitiello, Salvatore R.↗

Isotopic composition of cosmic-ray boron and nitrogen

New measurements of the cosmic-ray boron and nitrogen isotopes at earth and of the elemental abundances of boron, carbon, nitrogen, and oxygen are presented. A region of mutually allowed values for the cosmic-ray nitrogen source ratios is determined, and the cosmic-ray escape mean free path is determined as a function of energy using a leaky box model for cosmic-ray propagation in the Galaxy. Relative to O-16, a N-15 source abundance consistent with solar system composition and a N-14 source abundance which is a factor of about three underabundant relative to the solar value are found.

Krombel, K. E.↗

The role of boron and fluids in high temperature, shallow level metamorphism of the Chugach Metamorphic Complex, Alaska

The possible role of boron (B) involvement in granite equilibria and generation of melts during crustal metamorphism has been a focus of speculation in recent literature. Most of the evidence for such involvement derives from experimental data which implies that the addition of B will lower the temperature of the granite solidus. Also the presence of tourmaline has a minor effect on the temperature of the solidus. Further indirect evidence that B may be involved in partial melting processes is the observation that granulites are commonly depleted in B, whereas the B content of low grade metapelites can be high (up to 2000 ppm). Researchers' measurements of the whole-rock B contents of granulites from the Madras region, India are low, ranging from 0.4 to 2.6 ppm. Ahmad and Wilson suggest that B was mobilized in the fluid phase during granulite facies metamorphism of the Broken Hill Complex, Australia. Thus, it appears that during the amphibolite to granulite transition, B is systematically lost from metasediments. The B that is released will probably partition into the vapor phase and/or melt phase. Preliminary measurements imply that the boron content of rocks in the Chugach Metamorphic Complex is not sufficient to influence the processes of partial melting at low pressures.

Sisson, V. B.↗

Mechanical properties of particulate composites based on a body-centered-cubic Mg-Li alloy containing boron

The effect of substituting the Mg metal in Mg-B composites by a Mg-14 wt pct Li solid solution on the ductility of the resulting composite was investigated using elastic modulus measurements on the P/M composite material prepared with a dispersion of B particles (in a vol pct range of 0-30) in a matrix of Mg-14 wt pct Li-1.5 wt pct Al. It was found that the elastic modulus of the composites increased rapidly with increasing boron, with specific stiffness values reaching about two times that of most structural materials. The values of the compression and tensile strengths increased significantly with boron additions. Good tensile ductility was achieved at the level of 10 vol pct B. However, at 20 vol pct B, the Mg-Li composite exhibited only limited tensile ductility (about 2 percent total elongation).

Whalen, R. T.↗

Effect of boron on intergranular hot cracking in Ni-Cr-Fe superalloys containing niobium

Solidification mechanisms had a dominant influence on microfissuring behavior of the test group. Carbon modified the Laves formation significantly and showed that one approach to alloy design would be balancing carbide formers against Laves formers. Boron's strong effect on microfissuring can be traced to its potency as a Laves former. Boron's segregation to grain boundaries plays at best a secondary role in microfissuring.

Thompson, R. G.↗

Pyrolytic boron nitride coatings on ceramic yarns and fabrication of insulations

Pyrolytic boron nitride (PBN) was deposited on Nicalon NL 202 silicon carbide yarns at 1000 to 1200 C with the goal of improving the resistance of the Nicalon to deterioration in an aerodynamic environment at temperatures up to 1000 C. For continuous coating, the yarns were fed through the deposition chamber of a pilot plant sized CVD furnace at a rate of about 2 feet per minute. PBN coatings were obtained by reacting boron trichloride and ammonia gases inside the deposition chamber. Most of the PBN coatings were made at around 1080 C to minimize thermal degradation of the Nicalon. Pressures were typically below 0.1 Torr. The coated yarns were characterized by weight per unit length, tensile strength and modulus, scanning electron microscopy, and scanning Auger microscopy. The PBN coated Nicalon was woven into cloth, but was not entirely satisfactory as a high temperature sizing. Several 13 in. square pieces of Nicalon cloth were coated with PBN in a batch process in a factory sized deposition furnace. Samples of cloth made from the PBN coated Nicalon were sewn into thermal insulation panels, whose performance is being compared with that of panels made using uncoated Nicalon.

Moore, Arthur W.↗

Elemental boron-doped p(+)-SiGe layers grown by molecular beam epitaxy for infrared detector applications

SiGe/Si heterojunction internal photoemission (HIP) detectors have been fabricated utilizing molecular beam epitaxy of p(+)-SiGe layers on p(-)-Si substrates. Elemental boron from a high-temperature effusion cell was used as the dopant source during MBE growth, and high doping concentrations have been achieved. Strong infrared absorption, mainly by free-carrier absorption, was observed for the degenerately doped SiGe layers. The use of elemental boron as the dopant source allows a low MBE growth temperature, resulting in improved crystalline quality and smooth surface morphology of the Si(0.7)Ge(0.3) layers. Nearly ideal thermionic emission dark current characteristics have been obtained. Photoresponse of the HIP detectors in the long-wavelength infrared regime has been demonstrated.

Lin, T. L.↗

Detection of boron, cobalt, and other weak interstellar lines toward Zeta Ophiuchi

Numerous weak lines from interstellar atomic species toward Zeta Ophiuchi were observed with the Goddard High-Resolution Spectrograph. Of particular note are the first interstellar detection of cobalt and the detection of boron in this sight line. These measurements provide estimates for the amount of depletion for the two elements. Boron, a volatile, and cobalt, a refractory element, display the depletion pattern found by Savage et al. (1992). The abundance of phosphorus in the H II region associated with the star was obtained from a detection of P III. Additional weak lines from S I, C I, Ni II, and Cu II were detected for the first time; these lines provide the basis for refinements in oscillator strength and column density. Analysis of the neutral sulfur data indicates that the atomic gas is more widely distributed than the molecular material in the main component.

Federman, S. R.↗

Boron and Zirconium from Crucible Refractories in a Complex Heat-Resistant Alloy

In a laboratory study of the factors involved in the influence of induction vacuum melting on 55ni-20cr-15co-4mo-3ti-3al heat resistant alloy, it was found that the major factor was the type of ceramic used as the crucible. The study concluded that trace amounts of boron or zirconium derived from reaction of the melt with the crucible refactories improved creep-rupture properties at 1,600 degrees F. Boron was most effective and, in addition, markedly improved hot-workability.

Decker, R F↗

Anisotropic Nanomechanics of Boron Nitride Nanotubes: Nanostructured "Skin" Effect

The stiffness and plasticity of boron nitride nanotubes are investigated using generalized tight-binding molecular dynamics and ab-initio total energy methods. Due to boron-nitride BN bond buckling effects, compressed zigzag BN nanotubes are found to undergo novel anisotropic strain release followed by anisotropic plastic buckling. The strain is preferentially released towards N atoms in the rotated BN bonds. The tubes buckle anisotropically towards only one end when uniaxially compressed from both. A "skin-effect" model of smart nanocomposite materials is proposed which will localize the structural damage towards the 'skin' or surface side of the material.

Srivastava, Deepak↗