SEARCH · Search NASA

Results for “CDS”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

SourceResearch connectionFrom yearThrough year

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 235 records · Page 13

All sources NASA NTRS DOE OSTI

NASA NTRS1973

Photoconductor-metal contact at higher densities.

The formation of space charge in the barrier region is discussed. This region extends to a distance, x-sub o, equal to 200 A plus twice the mean free path of majority carriers. The conventional transport equation can be used only for x greater than x-sub o, and the carrier density at x-sub o represents a boundary condition for the bulk. Its change as a function of applied voltage, temperature, and light intensity in photoconducting CdS is discussed. The time dependence of the space-charge formation in the region between 0 and x-sub o is analyzed. It is shown under which conditions the individuality of the metal contact is observable.

Dussel, G. A.↗

NASA NTRS1973

Verification of sensitivity enhancement factors for CW ultrasonic resonators.

Sensitivity enhancement factors predicted by an analysis of CW ultrasonic resonator systems using the propagating wave model are verified. Absorption and dispersion sensitivity factors were obtained by producing small changes in the acoustic properties of a CdS resonator with a light beam.

Heyman, J. S.↗

NASA NTRS1974

Photomechanical vibration of thin crystals of polar semiconductors

It was found that thin crystals of polar (non-centrosymmetric) semiconductors constitute a new type of photosensitive system in which incident illumination is converted into mechanical energy: thus, illumination-induced elastic deformation (bending) was observed on thin (00.1) CdS and (111) GaAs crystals; furthermore, by employing chopped light the crystals were excited to their resonant vibration (photomechanical vibration); the dependence of the amplitude of this vibration on the energy of the incident radiation was found to be similar to the dependence of the surface photovoltage on the energy of the incident radiation (surface photovoltage spectrum). The present findings are consistent with a model based on light-induced modulation of the piezoelectric surface stresses.

Lagowski, J.↗

NASA NTRS1975

A new real-time non-coherent to coherent light image converter - The hybrid field effect liquid crystal light valve

A new, high-performance device has been developed for application to real-time coherent optical data processing. The new device embodies a CdS photoconductor, a CdTe light-absorbing layer, a dielectric mirror, and a liquid crystal layer sandwiched between indium-tin-oxide transparent electrodes deposited on optical quality glass flats. The noncoherent image is directed onto the photoconductor; this reduces the impedance of the photoconductor, thereby switching the ac voltage that is impressed across the electrodes onto the liquid crystal to activate the device. The liquid crystal is operated in a hybrid field effect mode. It utilizes the twisted nematic effect to create a dark off-state and the optical birefringence effect to create the bright on-state. The liquid crystal modulates the polarization of the coherent read-out light so an analyzer must be used to create an intensity modulated output beam.

Grinberg, J.↗

NASA NTRS1975

Cadmium stannate selective optical films for solar energy applications

Efforts concentrated on reducing the electrical sheet resistance of sputtered cadmium stannate films, installing and testing equipment for spray coating experiments, and sputter deposition of thin cadmium sulfide layers onto cadmium stannate electrodes. In addition, single crystal silicon wafers were coated with cadmium stannate. Work also continued on the development of the backwall CdS solar cell.

Haacke, G.↗

NASA NTRS1976

Photoelectrochemical cells - Conversion of intense optical energy

Conversion of optical energy to chemical energy and/or electrical energy using wet photoelectrochemical cells is described. Emphasis is on (1) the photoelectrolysis of H2O to H2 and O2 using cells having n-type semiconductor photoelectrodes fabricated from TiO2, SnO2, SrTiO3, KTaO3, and KTa(0.77)Nb(0.23)O3, and (2) the conversion of light to electrical energy using CdSe- and CdS-based cells with polysulfide electrolytes.

Wrighton, M. S.↗

NASA NTRS1977

Optically activated switch/modulator using a photoconductor and two channel waveguides

An optically activated switch was fabricated on LiNbO3 substrate by deposition of photoconductor-metal electrode structure on two channel waveguides obtained by the outdiffusion process. One waveguide was overcoated with a CdS film, and served as a light detector which converted the optical signal in that waveguide into an electric signal. Utilizing the electrooptic effect, this electric signal modulated the light propagating in the second waveguide by changing the refractive index, and the cutoff condition, of the waveguiding channel between two metal electrodes. The waveguides in the optically controlled switch can be either single or multimode. The length of the device can be short in comparison with other switching schemes. When binary optical signals are applied to the two waveguides, the switch can perform logic AND, NEGATION, OR and pseudo-amplification operations.

Goldberg, L.↗

NASA NTRS1976

Status of photoelectrochemical production of hydrogen and electrical energy

The efficiency for conversion of electromagnetic energy to chemical and electrical energy utilizing semiconductor single crystals as photoanodes in electrochemical cells was investigated. Efficiencies as high as 20 percent were achieved for the conversion of 330 nm radiation to chemical energy in the form of hydrogen by the photoelectrolysis of water in a SrTiO3 based cell. The SrTiO3 photoanodes were shown to be stable in 9.5 M NaOH solutions for periods up to 48 hours. Efficiencies of 9 percent were measured for the conversion of broadband visible radiation to hydrogen using n-type GaAs crystals as photoanodes. Crystals of GaAs coated with 500 nm of gold, silver, or tin for surface passivation show no significant change in efficiency. By suppressing the production of hydrogen in a CdSe-based photogalvanic cell, an efficiency of 9 percent was obtained in conversion of 633 nm light to electrical energy. A CdS-based photogalvanic cell produced a conversion efficiency of 5 percent for 500 nm radiation.

Byvik, C. E.↗

NASA NTRS1977

Time delay and integration array (TDI) using charge transfer device technology. Phase 2, volume 1: Technical

The 20x9 TDI array was developed to meet the LANDSAT Thematic Mapper Requirements. This array is based upon a self-aligned, transparent gate, buried channel process. The process features: (1) buried channel, four phase, overlapping gate CCD's for high transfer efficiency without fat zero; (2) self-aligned transistors to minimize clock feedthrough and parasitic capacitance; and (3) transparent tin oxide electrode for high quantum efficiency with front surface irradiation. The requirements placed on the array and the performance achieved are summarized. This data is the result of flat field measurements only, no imaging or dynamic target measurements were made during this program. Measurements were performed with two different test stands. The bench test equipment fabricated for this program operated at the 8 micro sec line time and employed simple sampling of the gated MOSFET output video signal. The second stand employed Correlated Doubled Sampling (CDS) and operated at 79.2 micro sec line time.

Source record↗

NASA NTRS1977

Application of an ultrasonic phase insensitive receiver to material measurements

The theory of a phase insensitive receiver based on acousto-electric effect is presented along with experimental characteristics of a CdS acousto-electric converter (AEC). Since the AEC is nearly phase insensitive, it is ideal for measurements in inhomogeneous materials and/or materials with irregular flatness and parallelism. Through transmission ultrasonic C-scan data of phantom flaws demonstrates a significant improvement in flaw characterization with an AEC over that of a conventional transducer. In addition, measurements with conventional transducers in anisotropically stressed metal samples are shown to lead to grossly inaccurate results due to phase sensitivity. Various other measurements are presented with data contrasting conventional transducers with an AEC in specific NDE applications.

Heyman, J. S.↗

NASA NTRS1977

Application of an ultrasonic phase insensitive receiver to material measurements

Heyman, J. S.↗

NASA NTRS1980

CdInP semiconductor alloy

Semiconductor alloy of CdSInP deposited onto CdS substrate using liquid-phase epitaxy (LPE) employed in solvent is replacement for InP n- and p-type heterojunction layers contained in GaAsp laser devices. Alloy will aid in lowering current density of laser and enhance its longevity and CW operation at room temperature.

Hawrylo, F. Z.↗

NASA NTRS1980

Separating liquid and gaseous solutions

Clusius-Dickel separation (CDS) technique, currently used in laboratoryscale separation of certain isotopes, may find more effective applications in low-gravity, space environments. Many advantages in power supply, mechanical stresses, and spatial arragement can be realized in space, making technique suitable for biological and polymer separations.

Benefield, J. W.↗

NASA NTRS1978

Development of an optical parallel logic device and a half-adder circuit for digital optical processing

The paper describes the fabrication and operation of an optical parallel logic (OPAL) device which performs Boolean algebraic operations on binary images. Several logic operations on two input binary images were demonstrated using an 8 x 8 device with a CdS photoconductor and a twisted nematic liquid crystal. Two such OPAL devices can be interconnected to form a half-adder circuit which is one of the essential components of a CPU in a digital signal processor.

Athale, R. A.↗

NASA NTRS1979

A split sphere 60,000 ton press

A split sphere press which can have a total force of 60,000 tons applied to its exterior by a 0.55 GPa hydrostatic pressure vessel is described. The inner anvils are made of tungsten carbide and show considerable plastic deformation under load. Much greater pressures, in the 100 GPa range, are possible if diamond tipped anvils are used. Because of the uniformly loaded multi-anvil arrangement, the diamond tips can be maintained under a high degree of compressive load and therefore prevent fracture which may occur in a conventional opposed anvil arrangement. Press operation on CdS, ZnSe, ZnS, GaP, and BP samples is described, and their resistance versus external pressure on the sphere are plotted.

Wanagel, J.↗

NASA NTRS1983

Improved Photosensor for Light Valves

Processing changes improve performance of liquid-crystal light valve for displaying projection TV images. New approach monitors performance of finished light valves for given changes in CdS process and experimentally to optimize process for good sensitivity and low negative memory.

Koda, N. J.↗

NASA NTRS1981

Spacecraft computer resource margin management

The conduction of the Project Galileo Orbiter, with 18 microcomputers and the equivalent of 360K 8-bit bytes of memory contained within two major engineering subsystems and eight science instruments, requires that the key onboard computer system resources be managed in a very rigorous manner. Attention is given to the rationale behind the project policy, the development stage, the preliminary design stage, the design/implementation stage, and the optimization or 'scrubbing' stage. The implementation of the policy is discussed, taking into account the development of the Attitude and Articulation Control Subsystem (AACS) and the Command and Data Subsystem (CDS), the reporting of margin status, and the response to allocation oversubscription.

Larman, B. T.↗

NASA NTRS1982

Doping behavior of iodine in Hg/0.8/Cd/0.2/Te

The defect state prevailing in iodine doped single-crystal samples of Hg0.8Cd0.2Te, annealed at 450-600 C in Hg vapor, has been deduced from Hall effect measurements on samples cooled to 77 K from the annealing temperature. Results are found to be similar to those previously obtained for iodine doped CdS, i.e. iodine acts as a single donor occupying Te lattice sites with a fraction paired with the native acceptor defects. The concentration of iodine on tellurium lattice sites increases with the partial pressure of Hg, whereas that of the pair species increases as the partial pressure of Hg decreases.

Vydyanath, H. R.↗