Charged particle radiation damage in semi- conductors, x. the energy dependence of electron damage in silicon
Energy dependence of electron radiation damage in silicon solar cells
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Energy dependence of electron radiation damage in silicon solar cells
Electric current capability of high field superconductors at high temperatures - niobium zirconium, niobium tin and niobium titanium
Magnetic, mechanical, and thermophysical property data on magnetic materials for use in advanced space electric power systems
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Silicon detector for beta radiation measurement - fabrication of surface barrier silicon detector, and Fortran program for analysis of beta ray measurements
Research on large volume lithium drifted silicon and germanium radiation detectors
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U-tube containing liquid indicates pressure differences in a leakage tester. This tube, connecting two containers, indicates that the amount of leakage over a set period of time is calculated from the pressure and gas volume.
Cable connector is developed in which each pair of contact elements is isolated by plastic cells and the mating interface is sealed by an elastic gasket. So insulated, the connector may be operated under high vacuum conditions at voltages up to 600 V ac without electrical leakage or intercontact ionization.
Moving magnetic field line identification for predicting particle motion on conducting surface
Handbook includes discussion of FCC advantages, status of FCC regarding military specifications, hardware availability, and existing applications, descriptions and data on available cable, connectors, fasteners and hardware, design techniques and applications, wiring, manufacturing and installation techniques - and inspection and test procedures.
Vise grip pliers have detachable metal gripping plates which are changed to accommodate cables from 1 to 3 in. wide and to form any desired fold angle. A second tool squeezes cable along crease to complete the fold.
Spool design and operation permit installation of up to 8 cables on single unit. Heat treating the cables while wound in a coil obtains effective recoil action.
Utilization of crystal-chemical criteria has suggested three structure types in which alkali ions may be mobile: (1)hollandites K(x)Mg(x/2)Ti(8-x/2)O16 and K(x)Al(x)Ti(8-x)O16 for 1.6 less than or equal to x less than or equal to 2.0 tungstate K2W4013; and (3) sodium hexatitante Na2Ti6O13. Each is a tunnel structure. An electrical screening procedure, previously tested on beta-alumina, has indicated high K(+) ion mobility in the hollandites and in the tungstate, but not in the hexatitanate. Specimens were polycrystalline disks near 90 percent of theoretical density. The ac conductivity calculated from dielectric and capacitance measurements has been attributed to ion mobility. This ac conductivity was up to 0.01/ohm-cm for hollandites and about 0.0001/ohm-cm for the tungstate, with approximate activation energies of 21 to 25 and 16 kJ/mole (5 to 6 and 4 kcal/mole), respectively. Electronic conduction and chemical reactivity have eliminated the tungstate from further consideration. The hollandites have been considered worthy of further development and evaluation.
An electrical screening method has been developed for preliminary evaluation of polycrystalline specimens of candidates for use as solid ionic conductive electrolytes in batteries. The procedure measures dielectric loss and capacitance, from which are calculated an ac conductivity attributed provisionally to ions and an activation energy for that conductivity. Electronic conductivity is directly measured. The screening procedure applied to sodium beta-alumina yielded acceptable values for conductivity and activation energy.
Test failures of heat pipes occur when the functional performance is unable to match the expected design limits or when the power applied to the heat pipe (in the form of heat) is distributed unevenly through the system, yielding a large thermal gradient. When a thermal gradient larger than expected is measured, it normally occurs in the evaporator or condenser sections of the pipe. Common causes include evaporator overheating, condenser dropout, noncondensable gas formation, surge and partial recovery of evaporator temperatures, masking of thermal profiles, and simple malfunctions due to leaks and mechanical failures or flaws. Examples of each of these phenomena are described along with corresponding failure analyses and corrective measures.
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Technique using boron effectively protects metal-oxide semiconductor devices from ionizing radiation without using shielding materials. Boron is introduced into insulating gate oxide layer at semiconductor-insulator interface.