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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 235 records · Page 13
All sourcesNASA NTRSDOE OSTI
NASA NTRS1973

Investigation of chemical vapor deposition of garnet films for bubble domain memories

The important process parameters and control required to grow reproducible device quality ferrimagnetic films by chemical vapor deposition (CVD) were studied. The investigation of the critical parameters in the CVD growth process led to the conclusion that the required reproducibility of film properties cannot be achieved with individually controlled separate metal halide sources. Therefore, the CVD growth effort was directed toward replacement of the halide sources with metallic sources with the ultimate goal being the reproducible growth of complex garnet compositions utilizing a single metal alloy source. The characterization of the YGdGaIG films showed that certain characteristics of this material, primarily the low domain wall energy and the large temperature sensitivity, severely limited its potential as a useful material for bubble domain devices. Consequently, at the time of the change from halide to metallic sources, the target film compositions were shifted to more useful materials such as YGdTmGaIG, YEuGaIG and YSmGaIG.

Besser, P. J.↗
NASA NTRS1978

Development and Evaluation of Die Materials for Use in the Growth of Silicon Ribbons by the Inverted Ribbon Growth Process. Task 2: LSSA Project

Several ribbon growth experiments were performed from V-shaped dies coated with CVD Si3N4. The most significant result was the ability to perform five consecutive growth runs from the same die without mechanical degradation of the die through temperature cycling. The die was made from vitreous carbon coated with CVD Si3N4. Silicon oxynitride, Si2N2O, was examined with respect to thermal stability in contact with molten silicon. The results of X-ray analysis indicate that this material is converted to both alpha - and beta-Si3N4 in the presence of molten silicon. Experiments on the stability of CVD SiOxNy shoe that this material can be maintained in contact with molten silicon (sessile drop test) for greater than 30 h at 1450 C without total decompositon. These layers are converted mainly to beta-Si3N4.

Duffy, M. T.↗
NASA NTRS1978

Characterization and properties of controlled nucleation thermochemical deposited (CNTD) silicon carbide

The microstructure of controlled nucleation thermochemical deposition (CNTD) - SiC material was studied and the room temperature and high temperature bend strength and oxidation resistance was evaluated. Utilizing the CNTD process, ultrafine grained (0.01-0.1 mm) SiC was deposited on W - wires (0.5 mm diameter by 20 cm long) as substrates. The deposited SiC rods had superior surface smoothness and were without any macrocolumnar growth commonly found in conventional CVD material. At both room and high temperature (1200 - 1380 C), the CNTD - SiC exhibited bend strength approximately 200,000 psi (1380 MPa), several times higher than that of hot pressed, sintered, or CVD SiC. The excellent retention of strength at high temperature was attributed to the high purity and fine grain size of the SiC deposit and the apparent absence of grain growth at elevated temperatures. The rates of weight change for CNTD - SiC during oxidation were lower than for NC-203 (hot pressed SiC), higher than for GE's CVD - SiC, and considerably below those for HS-130 (hot pressed Si3N4). The high purity, fully dense, and stable grain size CNTD - SiC material shows potential for high temperature structural applications; however problem areas might include: scaling the process to make larger parts, deposition on removable substrates, and the possible residual tensile stress.

Dutta, S.↗
NASA NTRS1981

High-efficiency thin-film GaAs solar cells, phase2

Thin GaAs epi-layers with good crystallographic quality were grown using a (100) Si-substrate on which a thin Ge epi-interlayer was grown by CVD from germane. Both antireflection-coated metal oxide semiconductor (AMOS) and n(+)/p homojunction structures were studied. The AMOS cells were fabricated on undoped-GaAs epi-layers deposited on bulk poly-Ge substrates using organo-metallic CVD film-growth, with the best achieved AM1 conversion efficiency being 9.1%. Both p-type and n(+)-type GaAs growth were optimized using 50 ppm dimethyl zinc and 1% hydrogen sulfide, respectively. A direct GaAs deposition method in fabricating ultra-thin top layer, epitaxial n(+)/p shallow homojunction solar cells on (100) GaAs substrates (without anodic thinning) was developed to produce large area (1 sq/cm) cells, with 19.4% AM1 conversion efficiency achieved. Additionally, an AM1 conversion efficiency of 18.4% (17.5% with 5% grid coverage) was achieved for a single crystal GaAs n(+)/p cell grown by OM-CVD on a Ge wafer.

Yeh, Y. C. M.↗
NASA NTRS1985

Bondability of Al-Si thin film in thermosonic gold wire bonding

The bondability of two kinds of Al-Si thin films in thermosonic Au wire bonding was examined by means of microshear tests. One type of film was formed by sputtering an Al-2% Si alloy, and the other was formed by depositing an 0.05 micrometer-thick polysilicon layer on SiO2 by chemical vapor deposition (CVD) and then depositing a 1.2 micrometer-thick Al layer on them by evaporation. After heat-treatment at 450 deg for 30 min., Si in the Al-Si film crystallized. The grain size of the crystallized Si affects the thermosonic wire bondability, i.e., for Al-2% Si sputtered films, good bondability was obtained under relatively small (1.0 micrometer) grain size conditions. In the successive layer process, on the other hand, the grain size of crystallized Si varies with the polysilicon CVD temperature. The optimum CVD temp. was determined from the standpoint of bondability with respect to grain size.

Nakagawa, K.↗
NASA NTRS1985

Experimental and Theoretical Analysis of Chemical Vapor Deposition with Prediction of Gravity Effects

A combined experimental and theoretical study to characterize the effects of gravitationally-induced transport on atmospheric pressure silicon epitaxy by SiH4 pyrolysis is planned. Experimentally, flow regimes in which free convective transport contributes to the Chemical Vapor Deposition (CVD) process will be identified, and, for these conditions, the flow and deposition process will be characterized. Specifically, this will include measurements of three dimensional temperature variations using in situ Rayleigh scattering, gas phase composition profiles using laser absorption and fluorescence techniques, and deposition rates and defect densities. Subsequently, the free convective transport contribution to the CVD process will be minimized and/or altered while leaving deposition chemistry unaltered, and the characterization will be repeated. Based on these analyses, the effects of gravitationally-induced transport on atmospheric pressure CVD will be assessed.

Charter D. Stinespring↗
NASA NTRS1987

The growth and in situ characterization of chemical vapor deposited SiO2

This paper reports the results of studies of the kinetics of remote (indirect) plasma enhanced low pressure CVD growth of SiO2 on Si and InP and of the in situ characterization of the electrical surface properties of InP during CVD processing. In the latter case photoluminescence was employed as a convenient and sensitive noninvasive method for characterizing surface trap densities. It was determined that, provided certain precautions are taken, the growth of SiO2 occurs in a reproducible and systematic fashion that can be expressed in an analytic form useful for growth rate prediction. Moreover, the in situ photoluminescence studies have yielded information on sample degradation resulting from heating and chemical exposure during the CVD growth.

Iyer, R.↗
NASA NTRS1988

Adhesion scratch testing - A round-robin experiment

Six sets of samples, TiN coated by chemical or physical vapor deposition methods (CVD or PVD) onto cemented carbide or high-speed steel (HSS), and TiC coated by CVD onto cemented carbide have been scratch tested using three types of commercially available scratch adhesion tester. With exception of one cemented carbide set, the reproducibility of the critical loads for any given set with a given stylus is excellent, about + or - 5 percent, and is about + or - 20 percent for different styli. Any differences in critical loads recorded for any given sample set can be attributed to the condition of the stylus (clean, new, etc.), the instrument used, the stylus itself (friction coefficient, etc.), and the sample set itself. One CVD set showed remarkably large differences in critical loads for different styli, which is thought to be related to a mechanical interaction between stylus and coating which is enhanced by a plastic deformability in the film related to the coating microstructure. The critical load for TiN on HSS increases with coating thickness, and differences in frictional conditions led to a systematic variation in the critical loads depending on the stylus used.

Perry, A. J.↗
NASA NTRS1989

Large scale fabrication of lightweight Si/SiC lidar mirrors

An up-scalable CVD process has been used to fabricate 7.5-cm models of lightweight Si/SiC mirrors consisting of an f/1.6 concave face-plate of SiC coated with CVD Si, in conjunction with a lightweight backup structure of SiC. Due to CVD chamber fabrication, no bonding agent was required to attach the SiC backup structure to the face-plate. Upon up-scaling, the SiC deposition process has been able to produce 40-cm diameter f/1.6 concave mirror face-plates. The mirrors were polished to a 1/5-wave figure and 10 A rms surface finish. There appear to be no intrinsic physical limits to further up-scaling of this mirror-fabrication process.

Goela, Jitendra Singh↗
NASA NTRS1991

Chemical vapor deposition modeling: An assessment of current status

The shortcomings of earlier approaches that assumed thermochemical equilibrium and used chemical vapor deposition (CVD) phase diagrams are pointed out. Significant advancements in predictive capabilities due to recent computational developments, especially those for deposition rates controlled by gas phase mass transport, are demonstrated. The importance of using the proper boundary conditions is stressed, and the availability and reliability of gas phase and surface chemical kinetic information are emphasized as the most limiting factors. Future directions for CVD are proposed on the basis of current needs for efficient and effective progress in CVD process design and optimization.

Gokoglu, Suleyman A.↗
NASA NTRS1991

Synthesis of high performance ceramic fibers by chemical vapor deposition for advanced metallics reinforcing

The chemical vapor deposition (CVD) synthesis of fibers capable of effectively reinforcing intermetallic matrices at elevated temperatures which can be used for potential applications in high temperature composite materials is described. This process was used due to its advantage over other fiber synthesis processes. It is extremely important to produce these fibers with good reproducible and controlled growth rates. However, the complex interplay of mass and energy transfer, blended with the fluid dynamics makes this a formidable task. The design and development of CVD reactor assembly and system to synthesize TiB2, CrB, B4C, and TiC fibers was performed. Residual thermal analysis for estimating stresses arising form thermal expansion mismatch were determined. Various techniques to improve the mechanical properties were also performed. Various techniques for improving the fiber properties were elaborated. The crystal structure and its orientation for TiB2 fiber is discussed. An overall view of the CVD process to develop CrB2, TiB2, and other high performance ceramic fibers is presented.

Revankar, Vithal↗
NASA NTRS1991

Diffusion mechanisms in Ir-coated Re for high-temperature, radiation-cooled rocket thrusters

Materials used for radiation-cooled rocket thrusters must be capable of surviving under extreme conditions of high temperatures and oxidizing environments. Thruster chambers were developed using chemical-vapor-deposited (CVD) Re coated with CVD Ir on the inside surface which is exposed to hot combustion gases. Ir serves as an oxidation barrier protecting the Re which maintains structural integrity at high temperatures. In order to predict and extend the performance limits of these Ir-coated Re thrusters, the diffusion kinetics of CVD materials at temperature are studied. Thruster end ring sections were examined using electron microprobe analysis both before and after exposure to high temperature vacuum environments. The resulting elemental maps for Re, Ir, and Mo in the near-surface region allow identification of diffusion mechanisms operating at these temperatures. Line scans for Ir and Re were fit using a diffusion model to extract relevant diffusion constants. The fastest diffusion process is seen to be grain boundary diffusion with Re diffusing down grain boundaries in the Ir overlayer. The measured dependence of the diffusion rate on temperature will allow prediction of operating lifetimes for these thrusters.

Hamilton, J. C.↗
NASA NTRS1992

Diffusion mechanisms in chemical vapor-deposited iridium coated on chemical vapor-deposited rhenium

Radiation-cooled rocket thruster chambers have been developed which use CVD Re coated with CVD Ir on the interior surface that is exposed to hot combustion gases. The Ir serves as an oxidation barrier which protects the structural integrity-maintaining Re at elevated temperatures. The diffusion kinetics of CVD materials at elevated temperatures is presently studied with a view to the prediction and extension of these thrusters' performance limits. Line scans for Ir and Re were fit on the basis of a diffusion model, in order to extract relevant diffusion constants; the fastest diffusion process is grain-boundary diffusion, where Re diffuses down grain boundaries in the Ir overlayer.

Hamilton, J. C.↗
NASA NTRS1992

Prediction of Chemical Vapor Deposition Rates on Monofilaments and Its Implications for Fiber Properties

Deposition rates are predicted in a cylindrical upflow reactor designed for chemical vapor deposition (CVD) on monofilaments. Deposition of silicon from silane in a hydrogen carrier gas is chosen as a relevant example. The effects of gas and surface chemistry are studied in a two-dimensional axisymmetric flow field for this chemically well-studied system. Model predictions are compared to experimental CVD rate measurements. The differences in some physical and chemical phenomena between such small diameter (about 150 microns) fiber substrates and other typical CVD substrates are highlighted. The influence of the Soret mass transport mechanism is determined to be extraordinarily significant. The difficulties associated with the accurate measurement and control of the fiber temperature are discussed. Model prediction sensitivities are investigated with respect to fiber temperatures, fiber radii, Soret transport, and chemical kinetic parameters. The implications of the predicted instantaneous rates are discussed relative to the desired fiber properties for both the batch and the continuous processes.

Gokoglu, S. A.↗
NASA NTRS1993

Scanning tunneling microscopy studies of diamond films and optoelectronic materials

In this report, we report on progress achieved from 12/1/92 to 10/1/93 under the grant entitled 'Scanning Tunneling Microscopy Studies of Diamond Films and Optoelectronic Materials'. We have set-up a chemical vapor deposition (CVD) diamond film growth system and a Raman spectroscopy system to study the nucleation and growth of diamond films with atomic resolution using scanning tunneling microscopy (STM). A unique feature of the diamond film growth system is that diamond films can be transferred directly to the ultrahigh vacuum (UHV) chamber of a scanning tunneling microscope without contaminating the films by exposure to air. The University of North Texas (UNT) provided $20,000 this year as matching funds for the NASA grant to purchase the diamond growth system. In addition, UNT provided a Coherent Innova 90S Argon ion laser, a Spex 1404 double spectrometer, and a Newport optical table costing $90,000 to set-up the Raman spectroscopy system. The CVD diamond growth system and Raman spectroscopy system will be used to grow and characterize diamond films with atomic resolution using STM as described in our proposal. One full-time graduate student and one full-time undergraduate student are supported under this grant. In addition, several graduate and undergraduate students were supported during the summer to assist in setting-up the diamond growth and Raman spectroscopy systems. We have obtained research results concerning STM of the structural and electronic properties of CVD grown diamond films, and STM and scanning tunneling spectroscopy of carbon nanotubes. In collaboration with the transmission electron microscopy (TEM) group at UNT, we have also obtained results concerning the optoelectronic material siloxene. These results were published in refereed scientific journals, submitted for publication, and presented as invited and contributed talks at scientific conferences.

Perez, Jose M.↗
NASA NTRS1992

Chemical vapor deposition fluid flow simulation modelling tool

Accurate numerical simulation of chemical vapor deposition (CVD) processes requires a general purpose computational fluid dynamics package combined with specialized capabilities for high temperature chemistry. In this report, we describe the implementation of these specialized capabilities in the spectral element code NEKTON. The thermal expansion of the gases involved is shown to be accurately approximated by the low Mach number perturbation expansion of the incompressible Navier-Stokes equations. The radiative heat transfer between multiple interacting radiating surfaces is shown to be tractable using the method of Gebhart. The disparate rates of reaction and diffusion in CVD processes are calculated via a point-implicit time integration scheme. We demonstrate the use above capabilities on prototypical CVD applications.

Bullister, Edward T.↗
NASA NTRS1995

High energy collimating fine grids

The objective of this project was to demonstrate the fabrication of extremely tight tolerance collimating grids using a high-Z material, specifically tungsten. The approach taken was to fabricate grids by a replication method involving the coating of a silicon grid substrate with tungsten by chemical vapor deposition (CVD). A negative of the desired grid structure was fabricated in silicon using highly wafering techniques developed for the semiconductor industry and capable of producing the required tolerances. Using diamond wafering blades, a network of accurately spaced slots was machined into a single-crystal silicon surface. These slots were then filled with tungsten by CVD, via the hydrogen reduction of tungsten hexafluoride. Following tungsten deposition, the silicon negative was etched away to leave the tungsten collimating grid structure. The project was divided into five tasks: (1) identify materials of construction for the replica and final collimating grid structures; (2) identify and implement a micromachining technique for manufacturing the negative collimator replicas (performed by NASA/JPL); (3) develop a CVD technique and processing parameters suitable for the complete tungsten densification of the collimator replicas; (4) develop a chemical etching technique for the removal of the collimator replicas after the tungsten deposition process; and (5) fabricate and deliver tungsten collimating grid specimens.

Arrieta, Victor M.↗
NASA NTRS1980

Coatings for Graphite Fibers

Several approaches for applying high resistance coatings continuously to graphite yarn were investigated. Two of the most promising approaches involved (1) chemically vapor depositing (CVD) SiC coatings on the surface of the fiber followed by oxidation, and (2) drawing the graphite yarn through an organo-silicone solution followed by heat treatments. In both methods, coated fibers were obtained which exhibited increased electrical resistances over untreated fibers and which were not degraded. This work was conducted in a previous program. In this program, the continuous CVD SiC coating process used on HTS fiber was extended to the coating of HMS, Celion 6000, Celion 12000 and T-300 graphite fiber. Electrical resistances three order of magnitude greater than the uncoated fiber were measured with no significant degradation of the fiber strength. Graphite fibers coated with CVD Si3N4 and BN had resistances greater than 10(exp 6) ohm/cm. Lower pyrolysis temperatures were used in preparing the silica-like coatings also resulting in resistances as high as three orders of magnitude higher than the uncoated fiber. The epoxy matrix composites prepared using these coated fibers had low shear strengths indicating that the coatings were weak.

Galasso, F. S.↗