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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 235 records · Page 13
All sourcesNASA NTRSDOE OSTI
NASA NTRS1993

Models for direct Monte Carlo simulation of coupled vibration-dissociation

A new model for reactive collisions is developed within the framework of a particle method, which simulates coupled vibration-dissociation (CVD) behavior in high-temperature gases. The fundamental principles of particle simulation methods are introduced with particular attention given to the probability functions employed to select thermal and reactive collisions. Reaction probability functions are derived which favor vibrationally excited molecules as reaction candidates. The new models derived here are used to simulate CVD behavior during thermochemical relaxation of constant-volume O2 reservoirs, as well as the dissociation incubation behavior of postshock N2 flows for comparisons with previous models and experimental data.

Haas, Brian L.↗
NASA NTRS1992

Deposition temperature dependence of the deep defect density for a-Si:H films grown by electron cyclotron resonance microwave plasma

The dependence on deposition temperature of the mobility gap density of states has been determined for hydrogenated amorphous silicon (a-Si:H) films grown by electron cyclotron resonance (ECR) microwave plasma CVD. A minimum in the integrated deep defect density of 1 x 10 exp 16/cu cm was found to occur at a temperature of approximately 250 C, while an Urbach slope minimum of 52 meV was observed at 175 C under our deposition conditions. Based on these measurements the ECR-grown films were found to be of excellent device quality and comparable to a-Si:H films grown by RF plasma-enhanced CVD.

Essick, J. M.↗
NASA NTRS1994

Making Ceramic Fibers By Chemical Vapor

Research and development of fabrication techniques for chemical vapor deposition (CVD) of ceramic fibers presented in two reports. Fibers of SiC, TiB2, TiC, B4C, and CrB2 intended for use as reinforcements in metal-matrix composite materials. CVD offers important advantages over other processes: fibers purer and stronger and processed at temperatures below melting points of constituent materials.

Revankar, Vithal V. S.↗
NASA NTRS1994

Method of producing a ceramic fiber-reinforced glass-ceramic matrix composite

A fiber-reinforced composite composed of a BaO-Al2O3-2SiO2 (BAS) glass ceramic matrix is reinforced with CVD silicon carbide continuous fibers. A slurry of BAS glass powders is prepared and celsian seeds are added during ball melting. The slurry is cast into tapes which are cut to the proper size. Continuous CVD-SiC fibers are formed into mats of the desired size. The matrix tapes and the fiber mats are alternately stacked in the proper orientation. This tape-mat stack is warm pressed to produce a 'green' composite. The 'green' composite is then heated to an elevated temperature to burn out organic constituents. The remaining interim material is then hot pressed to form a silicon carbide fiber-reinforced celsian (BAS) glass-ceramic matrix composite which may be machined to size.

Bansal, Narottam P.↗
NASA NTRS1993

Advanced Small Rocket Chambers. Basic Program and Option 2: Fundamental Processes and Material Evaluation

Propellants, chamber materials, and processes for fabrication of small high performance radiation cooled liquid rocket engines were evaluated to determine candidates for eventual demonstration in flight-type thrusters. Both storable and cryogenic propellant systems were considered. The storable propellant systems chosen for further study were nitrogen tetroxide oxidizer with either hydrazine or monomethylhydrazine as fuel. The cryogenic propellants chosen were oxygen with either hydrogen or methane as fuel. Chamber material candidates were chemical vapor deposition (CVD) rhenium protected from oxidation by CVD iridium for the chamber hot section, and film cooled wrought platinum-rhodium or regeneratively cooled stainless steel for the front end section exposed to partially reacted propellants. Laser diagnostics of the combustion products near the hot chamber surface and measurements at the surface layer were performed in a collaborative program at Sandia National Laboratories, Livermore, CA. The Material Sample Test Apparatus, a laboratory system to simulate the combustion environment in terms of gas and material temperature, composition, and pressure up to 6 Atm, was developed for these studies. Rocket engine simulator studies were conducted to evaluate the materials under simulated combustor flow conditions, in the diagnostic test chamber. These tests used the exhaust species measurement system, a device developed to monitor optically species composition and concentration in the chamber and exhaust by emission and absorption measurements.

Jassowski, Donald M.↗
NASA NTRS1994

Friction and Wear Properties of As-deposited and Carbon Ion-implanted Diamond Films

Recent work on the friction and wear properties of as-deposited and carbon ion-implanted diamond films was reviewed. Diamond films were produced by the microwave plasma chemical vapor deposition (CVD) technique. Diamond films with various grain sizes and surface roughnesses were implanted with carbon ions at 60 ke V ion energy, resulting in a dose of 1.2310(exp 17) carbon ions/cm(exp 2). Various analytical techniques, including Raman spectroscopy, proton recoil analysis, Rutherford backscattering, transmission and scanning electron microscopy, x-ray photoelectron spectroscopy, and x-ray diffraction, were utilized to characterize the diamond films. Sliding friction experiments were conducted with a polished natural diamond pin in contact with diamond films in the three environments: humid air (40 percent relative humidity), dry nitrogen (less than 1 percent relative humidity), and ultrahigh vacuum (10(exp -7) Pa). The CVD diamond films indeed have friction and were properties similar to those of natural diamond in the three environments. The as-deposited, fine-grain diamond films can be effectively used as self-lubricating, wear-resistant coatings that have low coefficients of friction (0.02 to 0.04) and low wear rates (10(exp -7) to 10(exp -8)mm(exp 3)/N-m) in both humid air and dry nitrogen. However, they have high coefficients of friction (1.5 to 1.7) and a high wear rate (10(exp -4)mm(exp 3/N-m) in ultrahigh vacuum. The carbon ion implanation produced a thin surficial layer (less than 0.1 micron thick) of amorphous, nondiamond carbon on the diamond films. In humid air and dry nitrogen, the ion-implanted, fine- and coarse-grain diamond films have a low coefficient of friction (around 0.1) and a low wear rate (10(exp -7)mm(exp 3/N-m). Even in ultrahigh vacuum, the presence of the nondiamond carbon layer reduced the coefficient of friction of fine-grain diamond films to 0.1 or lower and the wear rate to 10(exp -6)mm(exp 3)/N-m. Thus, the carbon ion-implanted, fine-grain diamond films can be effectively used as wear-resistant, self-lubricating coatings not only in air and dry nitrogen, but also in ultrahigh vacuum. The wear mechanism of diamond films is that of small fragments chipping off the surface. The size of wear particles is related to the extent of wear rates.

Miyoshi, Kazuhisa↗
NASA NTRS1995

Method of producing a silicon carbide fiber reinforced strontium aluminosilicate glass-ceramic matrix composite

A SrO-Al2O3-2SrO2 (SAS) glass ceramic matrix is reinforced with CVD SiC continuous fibers. This material is prepared by casting a slurry of SAS glass powder into tapes. Mats of continuous CVD-SiC fibers are alternately stacked with the matrix tapes. This tape-mat stack is warm-pressed to produce a 'green' composite. Organic constituents are burned out of the 'green' composite, and the remaining interim material is hot pressed.

Bansal, Narottam P.↗
NASA NTRS1994

Electrical properties of epitaxial 3C- and 6H-SiC p-n junction diodes produced side-by-side on 6H-SiC substrates

3C-SiC (beta-SiC) and 6H-SiC p-n junction diodes have been fabricated in regions of both 3C-SiC and 6H-SiC epitaxial layers which were grown side-by-side on low-tilt-angle 6H-SiC substrates via a chemical vapor deposition (CVD) process. Several runs of diodes exhibiting state-of-the-art electrical characteristics were produced, and performance characteristics were measured and compared as a function of doping, temperature, and polytype. The first 3C-SiC diodes which rectify to reverse voltages in excess of 300 V were characterized, representing a six-fold blocking voltage improvement over experimental 3C-SiC diodes produced by previous techniques. When placed under sufficient forward bias, the 3C-SiC diodes emit significantly bright green-yellow light while the 6H-SiC diodes emit in the blue-violet. The 6H-SiC p-n junction diodes represent the first reported high-quality 6H-SiC devices to be grown by CVD on very low-tilt-angle (less than 0.5 deg off the (0001) silicon face) 6H substrates. The reverse leakage current of a 200 micron diameter circular device at 1100 V reverse bias was less than 20 nA at room temperature, and excellent rectification characteristics were demonstrated at the peak characterization temperature of 400 C.

EPITAXIAL LAYER↗
NASA NTRS1996

Diamond Research Overview and a Model for Lab Experiments Using Oxyacetylene Torch

High pressure synthetic diamonds have now been a commercial product for over 40 years. Russian scientists invented the chemical vapor deposition (CVD) process 30 years ago, while the Japanese followed 10 years later and the U.S. was introduced to it 10 years after that. The new syntheses focus is on liquid and solid phase approaches. There are three CVD processes: microwave plasma, hot filament, and oxy-acetylene torch. The oxy-acetylene torch is an excellent materials synthesis lab experiment, emphasizing the simplicity of the science.

Roy, Rustum↗
NASA NTRS1996

A Two Phase HfB2-SiB4 Material

A two phase HfB2-SiB4 material which is useful as a high temperature oxidation resistant coating. This invention relates to ceramic coatings and more particularly to ceramic coatings containing metal borides. Boride materials are known to have good oxidation resistance, with HfB2 considered to be the best pure boride for oxidation applications. It has been shown that the addition of 10 to 20 percent SiC to HfB2 increases the oxidation resistance. The HfB2-SiC materials are prepared by hot pressing powder mixtures. Hot pressing powder mixtures has limited ability to produce fine grained multiphase materials due to particle coarsening during the sintering process. Additionally, the purity of the final monolithic structure is limited to the purity of the starting powders. Chemical vapor deposition (CVD) offers a method of producing highly pure multiphase ceramics, with better control of microstructure. Researchers have tried to produce HfB2-SiC coatings by CVD but without success.

SILICON COMPOUNDS↗
NASA NTRS1996

Friction and Wear Properties of As-Deposited and Carbon Ion-Implanted Diamond Films

Recent work on the friction and wear properties of as-deposited and carbon ion-implanted diamond films was reviewed. Diamond films were produced by the microwave plasma chemical vapor deposition (CVD) technique. Diamond films with various grain sizes and surface roughnesses were implanted with carbon ions at 60 keV ion energy, resulting in a dose of 1.2 x 10(exp 17) carbon ions per cm(exp 2). Various analytical techniques, including Raman spectroscopy, proton recoil analysis, Rutherford backscattering, transmission and scanning electron microscopy, X-ray photoelectron spectroscopy, and X-ray diffraction, were utilized to characterize the diamond films. Sliding friction experiments were conducted with a polished natural diamond pin in contact with diamond films in the three environments: humid air (40% relative humidity), dry nitrogen (less than 1 percent relative humidity), and ultrahigh vacuum (10(exp -7) Pa). The CVD diamond films indeed have friction and wear properties similar to those of natural diamond in the three environments. The as-deposited, fine-grain diamond films can be effectively used as self-lubricating, wear-resistant coatings that have low coefficients of friction (0.02 to 0.04) and low wear rates (10(exp -7) to lO(exp -8) mm(exp 3) N(exp -1) m(exp -1)) in both humid air and dry nitrogen. However, they have high coefficients of friction (1.5 to 1.7) and a high wear rate (10(exp -4) mm(exp 7) N(exp -1) m(exp -1)) in ultrahigh vacuum. The carbon ion implantation produced a thin surficial layer (less than 0.1 micron thick) of amorphous, non-diamond carbon on the diamond films. In humid air and dry nitrogen, the ion-implanted, fine and coarse-grain diamond films have a low coefficient of friction (around 0.1) and a low wear rate (10(exp -7) mm(exp 3) N(exp -1) m(exp-1)). Even in ultrahigh vacuum, the presence of the non-diamond carbon layer reduced the coefficient of friction of fine-grain diamond films to 0.1 or lower and the wear rate to 10(exp -6) mm(exp 3) N(exp -1) m(exp -1). Thus, the carbon ion-implanted, fine-grain diamond films can be effectively used as wear-resistant, self-lubricating coatings not only in air and dry nitrogen, but also in ultrahigh vacuum.

Miyoshi, Kazuhisa↗
NASA NTRS1997

Design of Inorganic Water Repellent Coatings for Thermal Protection Insulation on an Aerospace Vehicle

In this report, thin film deposition of one of the model candidate materials for use as water repellent coating on the thermal protection systems (TPS) of an aerospace vehicle was investigated. The material tested was boron nitride (BN), the water-repellent properties of which was detailed in our other investigation. Two different methods, chemical vapor deposition (CVD) and pulsed laser deposition (PLD), were used to prepare the BN films on a fused quartz substrate (one of the components of thermal protection systems on aerospace vehicles). The deposited films were characterized by a variety of techniques including X-ray diffraction, X-ray photoelectron spectroscopy, and scanning electron microscopy. The BN films were observed to be amorphous in nature, and a CVD-deposited film yielded a contact angle of 60 degrees with water, similar to the pellet BN samples investigated previously. This demonstrates that it is possible to use the bulk sample wetting properties as a guideline to determine the candidate waterproofing material for the TPS.

Fuerstenau, D. W.↗
NASA NTRS1998

Oxygen Impurities and Defects in Epitaxial Layer SiC and SiC Wafer Characterized by Room and Low Temperatures FTIR

SiC as a highly promising semiconducting material has received increasing attention in the last decade. The impurities such as oxygen and hydrogen have a great effect in electronic properties of semiconducting materials. In this study, the FTIR spectra were measured at room temperature (25 C) and low temperature (-70 C) for an n-type SiC substrate, a p-type epitaxial layer SiC, and patterned Ta on a p-type epitaxial layer SiC sample. The oxygen related IR peaks were measured for all three samples at room and low temperatures. The peak at 1105 cm(exp -1) is the result of a substitutional carbon and a interstitial oxygen in SiC. The concentration of the impurity oxygen increases in the SiC epitaxial layer during the CVD and electron beam processes. For the n-type SiC substrate, this peak does not appear. The peak at 905 cm(exp -1) exists in the IR spectra only for two epitaxial layer on p-type SiC substrate samples. This peak is related to oxygen vacancy centers in SiC, which are introduced in the CVD epitaxial growth process. At low temperature, the peak at 1105 cm(exp -1) shifts down and the peak at 905 cm(exp -1) shifts up for the epitaxial layer SiC samples. It can be explained that, at low temperatures, the stress increases due to the distorted bonds. The study shows that FTIR is a very effective method to evaluate low concentration impurities in SiC.

Lu, W. J.↗
NASA NTRS2001

Low Temperature Growth of Nanostructured Diamond Films on Metals

The field of nanocrystalline diamond and tetrahedral amorphous carbon films has been the focus of intense experimental activity in the last few years for applications in field emission display devices, optical windows, and tribological coatings, The choice of substrate used in most studies has typically been silicon. For metals, however, the thermal expansion mismatch between the diamond film and substrate gives rise to thermal stress that often results in delamination of the film. To avoid this problem in conventional CVD deposition low substrate temperatures (less than 700 C) have been used, often with the incorporation of oxygen or carbon monoxide to the feedgas mixture. Conventionally grown CVD diamond films are also rough and would require post-deposition polishing for most applications. Therefore, there is an obvious need to develop techniques for deposition of well-adhered, smooth nano-structured diamond films on metals for various tribological applications. In our work, nanostructured diamond films are grown on a titanium alloy substrate using a two-step deposition process. The first step is performed at elevated temperature (820 C) for 30 minutes using a H2/CH4/N2 gas mixture in order to grow a thin (approx. 600 nm) nanostructured diamond layer and improve film adhesion. The remainder of the deposition involves growth at low temperature (less than 600 C) in a H2/CH4/O2 gas mixture. Laser reflectance Interferometry (LRI) pattern during growth of a nanostructured diamond film on Ti-6Al-4V alloy. The first 30 minutes are at a high temperature of 820 C and the rest of the film is grown at a low temperature of 580 T. The fringe pattern is observed till the very end due to extremely low surface roughness of 40 nm. The continuation of the smooth nanostructured diamond film growth during low temperature deposition is confirmed by in-situ laser reflectance interferometry and by post-deposition micro-Raman spectroscopy and surface profilometry. Similar experiments performed without the starting nanostructured diamond layer resulted in poorly adhered films with a more crystalline appearance and a higher surface roughness. This low temperature deposition of nanostructured diamond films on metals offers advantages in cases where high residual thermal stress leads to delamination at high temperatures.

Baker, Paul A.↗
NASA NTRS1997

Computational Modeling in Structural Materials Processing

High temperature materials such as silicon carbide, a variety of nitrides, and ceramic matrix composites find use in aerospace, automotive, machine tool industries and in high speed civil transport applications. Chemical vapor deposition (CVD) is widely used in processing such structural materials. Variations of CVD include deposition on substrates, coating of fibers, inside cavities and on complex objects, and infiltration within preforms called chemical vapor infiltration (CVI). Our current knowledge of the process mechanisms, ability to optimize processes, and scale-up for large scale manufacturing is limited. In this regard, computational modeling of the processes is valuable since a validated model can be used as a design tool. The effort is similar to traditional chemically reacting flow modeling with emphasis on multicomponent diffusion, thermal diffusion, large sets of homogeneous reactions, and surface chemistry. In the case of CVI, models for pore infiltration are needed. In the present talk, examples of SiC nitride, and Boron deposition from the author's past work will be used to illustrate the utility of computational process modeling.

Meyyappan, Meyya↗
NASA NTRS1997

Simulation of Gas Mixtures in RF Discharges for Nitride Deposition

Tungsten and titanium nitride films have long been grown by chemical vapor deposition (CVD) methods. However, there has been recent interest in low temperature growth using plasma enhanced CVD. For the present work, we focus on the radio frequency (BE) discharge characteristics of gas mixtures used in nitride deposition (for example, WF6 and ammonia). Because the radial variations for a standard 200 mm, parallel plate reactor are limited to a small zone near the edges of the electrodes, a 1-D (one-dimensional) analysis is considered. This model consists of a self-consistent, 3-D (three-dimensional) moment fluid simulation that solves the continuity, momentum, and energy equations for neutral and charged species. The results in terms of plasma structure, radical concentrations, and local deposition rate will be presented. We will also compare the 1-D results with those obtained from a 2-D hybrid plasma equipment model (HPEM) developed at the University of Illinois.

Hwang, Helen H.↗
NASA NTRS1998

A Computational Chemistry Database for Semiconductor Processing

The concept of 'virtual reactor' or 'virtual prototyping' has received much attention recently in the semiconductor industry. Commercial codes to simulate thermal CVD and plasma processes have become available to aid in equipment and process design efforts, The virtual prototyping effort would go nowhere if codes do not come with a reliable database of chemical and physical properties of gases involved in semiconductor processing. Commercial code vendors have no capabilities to generate such a database, rather leave the task to the user of finding whatever is needed. While individual investigations of interesting chemical systems continue at Universities, there has not been any large scale effort to create a database. In this presentation, we outline our efforts in this area. Our effort focuses on the following five areas: 1. Thermal CVD reaction mechanism and rate constants. 2. Thermochemical properties. 3. Transport properties.4. Electron-molecule collision cross sections. and 5. Gas-surface interactions.

Jaffe, R.↗
NASA NTRS2000

Giving Bigger Satellites a Boost

Ultramet, Inc. has spurred a new process for producing rocket engine thrust chambers, through SBIR funding and the Glenn Research Center. High-temperature oxidation-resistant thruster materials are being produced in order to achieve high-temperature capability without sacrificing reliability. These thruster materials lead to an estimated three-percent improvement in propulsion system performance. To develop this material, Ultramet used a process called chemical vapor deposition (CVD). CVD involves heating precursors for metals, like iridium and rhenium, to temperatures at which they become gaseous. They are then deposited onto a mandrel, or spindle, layer-by-layer to produce high-density, highly resistant materials from the inside out.

Source record↗