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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 235 records · Page 13
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Impact of K-factor on Short Circuit Program Convergence for Inverter-Based Resources during Faults

Classical short-circuit programs that linearize the power network are no longer applicable for inverter based resources (IBRs), necessitating an iterative approach. Phasor domain programs can model the IBRs using an iterative approach considering nonlinear fault responses. In phasor domain models, the IBR can be modeled as a voltage controlled current source (VCCS) in tabular form with positive, negative, and zero sequence information for balanced and unbalance short-circuit faults. In the VCCS modeling of the IBR, positive and negative incremental reactive current, also known as the k-factor, plays an important role in short circuit program convergence. In this work, a few approaches: conventional VCCS modeling with a k-factor of 2, conventional VCCS modeling with a k-factor of 2 with modified pre-fault voltages, VCCS characteristics based on the power flow solution with a k-factor of 2, and VCCS characteristics based on the power flow solution with a k-factor of 1 are investigated for short circuit program convergence under higher IBR penetration. The IEEE 39 bus New England Test System is taken as the test system, and simulations are carried out in PSS®CAPE 15.0.26 simulation software. Simulation results demonstrate that IBR penetration is higher for the VCCS model, which corresponds to the power flow solution with k-factor 1, compared to other approaches.

42 ENGINEERING↗
DOE OSTI2019

Scattering of radio frequency waves by cylindrical filaments with general orientation relative to the magnetic field

Radio frequency waves are routinely used in tokamak fusion plasmas for plasma heating, current control, as well as in diagnostics. These waves are excited by antenna structures placed near the tokamak's wall and they have to propagate through a turbulent layer known as scrape-off layer, before reaching the core plasma (which is their target). This layer exhibits coherent density fluctuations in the form of filaments and blobs. The scattering processes of RF plane waves by single filament is studied with the assumption that the filament has cylindrical shape and infinite length. Furthermore, besides the major toroidal component of the externally imposed magnetic field, there is also a small poloidal magnetic field component. Considering also that the cylindrical filament's axis is not necessarily aligned with the toroidal direction, the total magnetic field is in general neither aligned with the axis of the cylinder nor with the toroidal direction. The investigation concerns the case of Electron Cyclotron (EC) waves (of frequency 170 GHz) for tokamak applications. The study covers a variety of density contrasts between the filament and the ambient plasma, different magnetic field inclinations with respect to the cylinder axis (for the same magnitude of magnetic induction B=4.5 T) and a wide range of filament radii.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2014

High speed low loss gate drive circuit

A gate drive circuit includes an insulated gate semiconductor switch. A controlled current source is connected to the semiconductor switch gate terminal to provide a gate drive circuit that is responsive to recycled gate charge corresponding to an internal gate capacitance of the insulated gate semiconductor switch.

Tao, Fengfeng↗
DOE OSTI2016

Overview of Recent Studies and Design Changes for the FNAL Magnetron Ion Source

This paper will cover several studies and design changes that will eventually be implemented to the Fermi National Accelerator Laboratory (FNAL) magnetron ion source. The topics include tungsten cathode insert, solenoid gas valves, current controlled arc pulser, cesium boiler redesign, gas mixtures of hydrogen and nitrogen, and duty factor reduction. The studies were performed on the FNAL test stand described in [1], with the aim to improve source lifetime, stability, and reducing the amount of tuning needed.

43 PARTICLE ACCELERATORS↗
DOE OSTI2017

Integrated optical transceiver with electronically controlled optical beamsteering

A beam-steering optical transceiver is provided. The transceiver includes one or more modules, each comprising an antenna chip and a control chip bonded to the antenna chip. Each antenna chip has a feeder waveguide, a plurality of row waveguides that tap off from the feeder waveguide, and a plurality of metallic nanoantenna elements arranged in a two-dimensional array of rows and columns such that each row overlies one of the row waveguides. Each antenna chip also includes a plurality of independently addressable thermo-optical phase shifters, each configured to produce a thermo-optical phase shift in a respective row. Each antenna chip also has, for each row, a row-wise heating circuit configured to produce a respective thermo-optic phase shift at each nanoantenna element along its row. The control chip includes controllable current sources for the independently addressable thermo-optical phase shifters and the row-wise heating circuits.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Single Active Switch PV Inverter

This report presents a new PV inverter topology that uses only one active switch instead of 7 active switches in a conventional PV inverter. It has a buck boost converter and operates at discontinuous current control mode, which can reduce the output stage from an active switch bridge to a thyristor bridge. This concept, if successfully demonstrated, may have great cost and size/weight benefits over conventional solutions. Since the proposed topology is completely different from the traditional boost converter plus voltage source inverter approach, there is no existing control/modulation scheme available. A new modulation scheme for both the main switch and the thyristors has been developed. An active clamping circuit has also been proposed to reduce switching losses and voltage spike during the switching transient. A simulation model has been set up to validate the control algorithm and clamping circuit. Simulated results show that a proposed 10 kW PV inverter can reach 5% total harmonic distortion (THD), 98.8% peak efficiency with only one main active switch, and an inductor weighing less than 3 kg. Based on that, a 10 kW prototype converter has been designed and built.

14 SOLAR ENERGY↗
DOE OSTI2017

Stability Assessment of a System Comprising a Single Machine and Inverter with Scalable Ratings

From the inception of power systems, synchronous machines have acted as the foundation of large-scale electrical infrastructures and their physical properties have formed the cornerstone of system operations. However, power electronics interfaces are playing a growing role as they are the primary interface for several types of renewable energy sources and storage technologies. As the role of power electronics in systems continues to grow, it is crucial to investigate the properties of bulk power systems in low inertia settings. In this paper, we assess the properties of coupled machine-inverter systems by studying an elementary system comprised of a synchronous generator, three-phase inverter, and a load. Furthermore, the inverter model is formulated such that its power rating can be scaled continuously across power levels while preserving its closed-loop response. Accordingly, the properties of the machine-inverter system can be assessed for varying ratios of machine-to-inverter power ratings and, hence, differing levels of inertia. After linearizing the model and assessing its eigenvalues, we show that system stability is highly dependent on the interaction between the inverter current controller and machine exciter, thus uncovering a key concern with mixed machine-inverter systems and motivating the need for next-generation grid-stabilizing inverter controls.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2017

Implementation of Design Changes Towards a More Reliable, Hands-off Magnetron Ion Source

As the main H- ion source for the accelerator complex, magnetron ion sources have been used at Fermilab since the 1970’s. At the offline test stand, new R&D is carried out to develop and upgrade the present magnetron-type sources of H- ions of up to 80 mA and 35 keV beam energy in the context of the Proton Improvement Plan. The aim of this plan is to provide high-power proton beams for the experiments at FNAL. In order to reduce the amount of tuning and monitoring of these ion sources, a new electronic system consisting of a current-regulated arc discharge modulator allow the ion source to run at a constant arc current for improved beam output and operation. A solenoid-type gas valve feeds H2 gas into the source precisely and independently of ambient temperature. This summary will cover several studies and design changes that have been tested and will eventually be implemented on the operational magnetron sources at Fermilab. Innovative results for this type of ion source include cathode geometries, solenoid gas valves, current controlled arc pulser, cesium boiler redesign, gas mixtures of hydrogen and nitrogen, and duty factor reduction, with the aim to improve source lifetime, stability, and reducing the amount of tuning needed. In this summary, I will highlight the advances made in ion sources at Fermilab and will outline the directions of the continuing R&D effort.

43 PARTICLE ACCELERATORS↗
DOE OSTI2019

Metal oxide semiconductor (MOS) controlled devices and methods of making the same

Metal-Oxide-Semiconductor (MOS) controlled semiconductor devices and methods of making the devices are provided. The devices include a gate which controls current flow through channel regions positioned between source/emitter and drain regions of the device. The devices include a gate oxide layer having a variable thickness. The thickness of the gate oxide layer under the edge of the gate and over the source/emitter regions is different than the thickness over the channel regions of the device. The oxide layer thickness near the edge of the gate can be greater than the oxide layer thickness over the channel regions. The source/emitter regions can be implanted to provide enhanced oxide growth during gate oxide formation. The source/emitter region can include regions that are implanted to provide enhanced oxide growth during gate oxide formation and regions which do not provide enhanced oxide growth during gate oxide formation. The devices can be SiC devices such as SiC MOSFETs and SiC IGBTs.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Metal oxide semiconductor (MOS) controlled devices and methods of making the same

Metal-Oxide-Semiconductor (MOS) controlled semiconductor devices and methods of making the devices are provided. The devices include a gate which controls current flow through channel regions positioned between source/emitter and drain regions of the device. The devices include a gate oxide layer having a variable thickness. The thickness of the gate oxide layer under the edge of the gate and over the source/emitter regions is different than the thickness over the channel regions of the device. The oxide layer thickness near the edge of the gate can be greater than the oxide layer thickness over the channel regions. The source/emitter regions can be implanted to provide enhanced oxide growth during gate oxide formation. The source/emitter region can include regions that are implanted to provide enhanced oxide growth during gate oxide formation and regions which do not provide enhanced oxide growth during gate oxide formation. The devices can be SiC devices such as SiC MOSFETs and SiC IGBTs.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Metal oxide semiconductor (MOS) controlled devices and methods of making the same

Metal-Oxide-Semiconductor (MOS) controlled semiconductor devices and methods of making the devices are provided. The devices include a gate which controls current flow through channel regions positioned between source/emitter and drain regions of the device.The devices include a gate oxide layer having a variable thickness. The thickness of the gate oxide layer under the edge of the gate and over the source/emitter regions is different than the thickness over the channel regions of the device. The oxide layer thickness near the edge of the gate can be greater than the oxide layer thickness over the channel regions. The source/emitter regions can be implanted to provide enhanced oxide growth during gate oxide formation. The source/emitter region can include regions that are implanted to provide enhanced oxide growth during gate oxide formation and regions which do not provide enhanced oxide growth during gate oxide formation. The devices can be SiC devices such as SiC MOSFETs and SiC IGBTs.

Matocha, Kevin↗
DOE OSTI2022

Electrolyzer and method of use

Provided herein are methods for operating carbon oxide (CO x ) reduction reactors (CRR) and related apparatus. In some embodiments, the methods involve shutting off, reducing, or otherwise controlling current during various operation stages including hydration, break-in, normal operation, planned shut-offs, and extended shutoff or storage periods.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Power Hardware-in-the-Loop Interfaces for Inverter-Based Microgrid Experiments Including Transitions: Preprint

Microgrids continue to proliferate, particularly those that rely on inverter-based resources as the microgrid's voltage and frequency leader. Hardware-in-the-loop (HIL) simulations can de-risk microgrid deployments, and therefore we need power-hardware-in-the-loop (PHIL) interfaces for grid-forming (GFM) inverters to enable simulations of seamless transitions between islanded and grid-connected operation. Such microgrid interfaces are particularly challenging to model when the inverters need to switch modes, i.e., between grid-following (GFL) and GFM as the microgrid transitions between grid-connected and islanded operation. This paper presents two PHIL interfaces for such microgrids and the preliminary experimental results: One interface is suitable for those who have access to a power amplifier that can operate as a controllable current source, and the other is for those who need a solution that uses a voltage-mode power amplifier.

battery energy storage system↗
DOE OSTI2013

Targeted Health Assessment for Wastes Contained at the Niagara Falls Storage Site to Guide Planning for Remedial Action Alternatives - 13428

The U.S. Army Corps of Engineers (USACE) is evaluating potential remedial alternatives at the 191-acre Niagara Falls Storage Site (NFSS) in Lewiston, New York, under the Formerly Utilized Sites Remedial Action Program (FUSRAP). The Manhattan Engineer District (MED) and Atomic Energy Commission (AEC) brought radioactive wastes to the site during the 1940's and 1950's, and the U.S. Department of Energy (US DOE) consolidated these wastes into a 10-acre interim waste containment structure (IWCS) in the southwest portion of the site during the 1980's. The USACE is evaluating remedial alternatives for radioactive waste contained within the IWCS at the NFSS under the Feasibility Study phase of the Comprehensive Environmental Response, Compensation, and Liability Act (CERCLA) process. A preliminary evaluation of the IWCS has been conducted to assess potential airborne releases associated with uncovered wastes, particularly during waste excavation, as well as direct exposures to uncovered wastes. Key technical issues for this assessment include: (1) limitations in waste characterization data; (2) representative receptors and exposure routes; (3) estimates of contaminant emissions at an early stage of the evaluation process; (4) consideration of candidate meteorological data and air dispersion modeling approaches; and (5) estimates of health effects from potential exposures to both radionuclides and chemicals that account for recent updates of exposure and toxicity factors. Results of this preliminary health risk assessment indicate if the wastes were uncovered and someone stayed at the IWCS for a number of days to weeks, substantial doses and serious health effects could be incurred. Current controls prevent such exposures, and the controls that would be applied to protect onsite workers during remedial action at the IWCS would also effectively protect the public nearby. This evaluation provides framing context for the upcoming development and detailed evaluation of remedial alternatives for the IWCS. (authors)

12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗
DOE OSTI2024

Electrolyzer and method of use

Provided herein are methods for operating carbon oxide (CO x ) reduction reactors (CRR) and related apparatus. In some embodiments, the methods involve shutting off, reducing, or otherwise controlling current during various operation stages including hydration, break-in, normal operation, planned shut-offs, and extended shutoff or storage periods.

Source record↗
DOE OSTI2026

Enhancing Synchronous Condenser Operation of Hydrogenerators

Hydropower plants are sometimes dispatched below capacity or even shut down to meet water regulations. These can temporarily be repurposed to operate as synchronous condensers. To enable this capability, this paper proposes a design that allows hydrogenerators to safely operate as synchronous condensers, providing fast voltage and reactive power support under both normal and boost conditions. The proposed design integrates capability curves with hydrogenerators’ excitation systems through modifications using proposed MVA-field current curve, current controller, and limiter. The design is implemented locally at the machine for rapid response. Simulation results demonstrate the effectiveness of the proposed design and using hydrogenerators as synchronous condensers in power grids.

24 - POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2025

Per-Phase Control for CHB Converters with Negative-Sequence Current and DC Voltage Balancing Control

This paper presents a per-phase controller for a grid-connected Cascaded H-Bridge (CHB) converter featuring negative sequence current regulation and DC bus voltage balancing capabilities. Unlike conventional three-phase controllers, each phase of the CHB can be separately and controlled to regulate the DC voltage and reactive power flow. per-phase negative sequence current control strategy is incorporated into the proposed controller to ensure compliance with IEEE Standard 2800-2022, which requires the absorption of negative-sequence reactive current during grid voltage disturbances. Furthermore, a feed-forward control-based DC bus voltage balancing method is employed, which eliminates the need for the integrator commonly used in traditional approaches. The performance of the proposed controller is validated under various unbalanced grid scenarios and DC bus voltage imbalances through electromagnetic transient (EMT) simulation using a three-phase, three-level grid-connected CHB–Dual Active Bridge (DAB) converter testbed developed on MATLAB/Simulink. Additionally, the performance of the negative-sequence current regulation is investigated through simulation under different unbalanced grid voltage scenarios.

negative sequence current↗
DOE OSTI2014

Generation and coherent control of pure spin currents via terahertz pulses

We inspect the time and spin-dependent, inelastic tunneling in engineered semiconductor-based double quantum well driven by time-structured terahertz pulses. An essential ingredient is an embedded spin-active structure with vibrational modes that scatter the pulse driven carriers. Due to the different time scales of the charge and spin dynamics, the spin-dependent electron-vibron coupling may result in pure net spin current (with negligible charge current). Heating the vibrational site may affect the resulting spin current. Furthermore, by controlling the charge dynamics, the spin dynamics and the generated spin current can be manipulated and switched on and off coherently.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗