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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 235 records · Page 13
All sourcesNASA NTRSDOE OSTI
NASA NTRS1984

Influence of oxygen on defect production in electron-irradiated, boron-doped silicon

Deep level transient spectroscopy (DLTS) measurements were made on float-zone and crucible-grown, boron-doped silicon irradiated with 1-MeV electrons. The minority carrier trap attributed to a boron-related state, was not seen in low-resistivity, float-zone silicon. However, a new majority carrier trap was observed in these samples. In the case of more lightly doped material the minority carrier trap was present, and its introduction rate was lower in float-zone than in crucible-grown silicon. For 1- and 10-ohm-cm float-zone material that was oxidized during processing, the introduction rates for this trap were comparable to those for crucible-grown silicon. This behavior indicates that the minority carrier trap involves oxygen and that it may be due to a boron-oxygen complex. The majority carrier trap seen in heavily doped, float-zone silicon may also involve boron but not oxygen. Observed trap concentrations suggest that oxygen content in the regions examined by DLTS is affected by processing techniques. Other differences were observed in defect production and annealing behavior of electron-irradiated, float-zone and crucible-grown silicon.

Deangelis, H. M.↗
NASA NTRS1985

Experimental test for interpreting the increase in sensibility of doped CR-39

In recent years the sensibility of CR-39 to nuclear tracks has been increased by doping the corresponding monomer with dioctyl phtalate. At this regard, two theoretical approaches are current managed to explain this phenomenon: either the doping react with the active radicals in the chain blocking them, stopping crosslinking between chains, or alternatively that the doping gets between them giving wider space between the crosslinkined chains.

Laville, A.↗
NASA NTRS1986

Transit time and charge storage measurements in heavily doped emitters

A first direct measurement of the minority-carrier transit time in a transparent heavily doped emitter layer is reported. The value was obtained by a high-frequency conductance method recently developed and used for low-doped Si. The transit time coupled with the steady-state current enables the determination of the quasi-static charge stored in the emitter and the quasi-static emitter capacitance. Using a transport model, from the measured transit time, the value for the minority-carrier diffusion coefficient and mobility is estimated. The measurements were done using a heavily doped emitter of the Si p(+)-n-p bipolar transistor. The new result indicates that the position-averaged minority-carrier diffusion coefficients may be much smaller than the corresponding majority-carrier values for emitters having a concentration ranging from about 3 x 10 to the 19th per cu cm to 10 to the 20th per cu cm.

Neugroschel, A.↗
NASA NTRS1986

Measurement of minority carrier lifetime, mobility and diffusion length in heavily doped silicon

Carrier transport and recombination parameters in heavily doped silicon were examined. Data were presented for carrier diffusivity in both p- and n-type heavily doped silicon covering a broad range of doping concentrations from 10 to the 15th power to 10 to the 20th power atoms/cu cm. One of the highlights of the results showed that minority carrier diffusivities are higher by a factor of 2 in silicon compared to majority carrier diffusivities.

Swirhun, S. E.↗
NASA NTRS1986

Heavy doping effects in high efficiency silicon solar cells

The temperature dependence of the emitter saturation current for bipolar devices was studied by varying the surface recombination velocity at the emitter surface. From this dependence, the value was derived for bandgap narrowing that is in better agreement with other determinations that were obtained from the temperature dependence measure on devices with ohmic contacts. Results of the first direct measurement of the minority-carrier transit time in a transparent heavily doped emitter layer were reported. The value was obtained by a high-frequency conductance method recently developed and used for doped Si. Experimental evidence is presented for significantly greater charge storage in highly excited silicon near room temperature than conventional theory would predict. These data are compared with various data for delta E sub G in heavily doped silicon.

Lindholm, F. A.↗
NASA NTRS1987

Ohmic contact formation in semi-insulating GaAs using shallow heavily doped p-type layers

The paper describes a simple, safe, and effective method for forming shallow zinc-doped p-type layers on chromium-doped semiinsulating GaAs, using an open-tube diffusion technique. The resulting peak dopant concentration for the 850-C diffusion was 10 to the 20th/cu cm. The contact resistance of ohmic contacts fabricated on these layers was found to be about 0.00005 ohm/sq cm. The variation of the contact resistance across the wafer reflected the variation of the doping concentration.

Bose, Amitava↗
NASA NTRS1987

Self-consistent calculations and design considerations for a GaAs nipi doping superlattice solar cell

The authors present design constraints which show that a previously proposed GaAs nipi doping superlattice solar cell structure would not work as an efficient space solar cell. A structure based on the CLEFT process, which shows promise of being an efficient cell with very high radiation tolerance, is proposed. In order to test theoretically its viability and to optimize its design, self-consistent quantum mechanical calculations were made for a number of thicknesses of the n, i, and p layers and the dopings in the n and p layers. These results show that: 1) an i layer is not necessary; in fact, its presence makes it difficult to satisfy one of the key constraints; 2) a near-optimum design with 750-A thick n and p layers with dopings of 2.5E18/cu cm and a selective contact separation of 20 microns would yield both high efficiency and very high radiation tolerance.

Clark, Ralph O.↗
NASA NTRS1988

Characterization of Mn-doped In(1-x)Ga(x)As(y)P(1-y) grown by LPEE

Mn-doped In(1-x)Ga(x)As(y)P(1-y) epilayers lattice matched to InP substrate have been grown by the liquid phase electroepitaxial (LPEE) technique. The variation of growth velocity of the epilayers with current density and the doping characteristics of Mn in the epilayer has been studied. The temperature dependence of the hole concentration and the mobility has been analyzed to determine the donor and acceptor densities, thermal activation energy of the level associated with Mn and the dominant scattering mechanisms that limit the hole mobility. The photoluminescence spectra of the doped epilayers are examined at 10 K as a function of the excitation level.

Iyer, Shanthi N.↗
NASA NTRS1994

Growth studies of erbium-doped GaAs deposited by metalorganic vapor phase epitaxy using noval cyclopentadienyl-based erbium sources

Erbium-doped GaAS layers were grown by metalorganic vapor phase epitaxy using two new sources, bis(i-propylcyclopentadienyl)cyclopentadienyl erbium and tris(t-butylcyclopentadienyl) erbium. Controlled Er doping in the range of 10(exp 17) - 10(exp 18)/cu cm was achieved using a relatively low source temperature of 90 C. The doping exhibits a second-order dependence on inlet source partial pressure, similar to behavior obtained with cyclopentadienyl Mg dopant sources. Equivalent amounts of oxygen and Er are present in 'as-grown' films indicating that the majority of Er dopants probably exist as Er-O complexes in the material. Er(+3) luminescence at 1.54 micrometers was measured from the as-grown films, but ion implantation of additional oxygen decreases the emission intensity. Electrical compensation of n-type GaAs layers codoped with Er and Si is directly correlated to the Er concentration is proposed to arise from the deep centers associated with Er which are responsible for a broad emission band near 0.90 micrometers present in the photoluminescence spectra of GaAs:Si, Er films.

Redwing, J. M.↗
NASA NTRS1996

PtSi/Si LWIR Detectors Made With p+ Doping Spikes

PtSi/Si Schottky-barrier devices detecting long-wavelength infrared (LWIR) photons demonstrated. Essential feature of one of these devices is p+ "doping spike"; layer of Si about 10 Angstrom thick, located at PtSi/Si interface, and doped with electron acceptors (boron atoms) at concentration between 5 x 10(19) and 2 x 10(20) cm(-3). Doping spikes extend cutoff wavelengths of devices to greater values than otherwise possible.

Lin, True-Lon↗
NASA NTRS1997

Chromium Diffusion Doping on ZnSe Crystals

Chromium doped zinc selenide crystal have recently been demonstrated to be a promising material for near-IR room temperature tunable lasers which have an emission range of 2-3 micrometers. In this study a new diffusion doping process has been developed for incorporation of Cr(+2) ion into ZnSe wafers. This process has been successfully performed under isothermal conditions, at temperatures above 800 C. Concentrations in excess of 10(exp 19) Cr(+2) ions/cu cm, an order of magnitude larger than previously reported in melt grown ZnSe material, have been obtained by diffusion doping, as estimated from optical absorption measurements. The diffusivity was estimated to be about 10(exp -8) sq cm/sec using a thin film diffusion model. Resistivity was derived from current-voltage measurements and in the range of 10(exp 13) and 10(exp 16) omega-cm. The emission spectra and temperature dependent lifetime data will also be presented and discussed.

Journigan, Troy D.↗
NASA NTRS1997

Photorefractivity in a Titanium Doped ZnCdTe Crystal

Single crystals of Zn(.04)Cd(.96)Te was grown by horizontal physical vapor transport (PVT) method and doped by annealing with TiTe2 powder at 600 C for six days. Photorefractive two-beam coupling, along with photoluminescence and absorption spectroscopy, were used to characterize the ZnCdTe:Ti crystal. At 1.32 micrometers, the photorefractive gain has been measured as a function of the grating period. A gain of about 0.16/cm was obtained at an intensity of about 0.1 W/sq cm. The results of this titanium doped ZnCdTe crystal are compared to that of vanadium-doped CdTe crystals reported previously.

Davis, M.↗
NASA NTRS1998

Surface Morphology of Undoped and Doped ZnSe Films

Rare-earth doped ions in polar II-VI semiconductors have recently played an important role in the optical properties of materials and devices. In this study, undoped ZnSe and erbium doped ZnSe films were grown by radio frequency (RF) magnetron sputtering method. Atomic Force Microscopy (AFM) was used together with optical microscopy and UV-Vis spectroscopy to characterize the films. Doped samples were found to have higher surface roughness and quite different surface morphology compared to that of undoped samples. The grown films generally show a relatively smooth and uniform surface indicating that they are of overall good quality. The impact of plasma etching on ZnSe:Er film examined under AFM is also discussed.

George, T.↗
NASA NTRS1998

Luminescence of Eu(3+) doped SiO2 Thin Films and Glass Prepared by Sol-gel Technology

Trivalent europium ions are an important luminophore for lighting and display. The emission of (5)D0 to (7)F2 transition exhibits a red color at about 610 nm, which is very attractive and fulfills the requirement for most red-emitting phosphors including lamp and cathode ray phosphorescence materials. Various EU(3+) doped phosphors have been developed, and luminescence properties have been extensively studied. On the other hand, sol-gel technology has been well developed by chemists. In recent years, applications of this technology to optical materials have drawn a great attention. Sol-gel technology provides a unique way to obtain homogeneous composition distribution and uniform doping, and the processing temperature can be very low. In this work, EU(3+) doped SiO2 thin films and glasses were prepared by sol-gel technology and their spectroscopic properties were investigated.

Castro, Lymari↗
NASA NTRS1998

Evaluation of Manganese Doped Ca5(PO4)3F as a Near Infrared (1-2 microns) Solid-State Laser Material

Tunable solid-state lasers are of enormous interest for applications including fundamental spectroscopy, remote sensing of the earth atmosphere, medical surgery, and optical communications. Efficient and widely tunable lasers have been developed for the 800-1100 nm region based on transition metal doped insulators like e.g. Ti:Sapphire. The development of transition metal lasers operating at longer wavelength, however, has been limited by the luminescence efficiency of existing materials. We are currently evaluating Mn doped Ca5(PO4)3F as a new solid-state laser material for the 1-2 micro-m region. Preliminary spectroscopic studies revealed that Mn:Ca5(PO4)3F exhibits an intense near infrared luminescence which extends from 1100-1300 nm. Based on lifetime measurements we estimated the luminescence quantum efficiency to be as high as 90 deg./0 at room temperature. The near infrared luminescence properties of Mn doped Ca5(PO4)3F and its potential for solid-state laser applications will be discussed in detail.

Turner, Matthew↗
NASA NTRS2000

The Preparation Conditions of Chromium Doped ZnSe and Their Effect on The Infrared Luminescence Properties

We report the investigation by photoluminescence lifetime measurements of the near-IR emissions from a series of chromium-doped ZnSe samples, correlated to their preparation conditions. The samples were polycrystalline or single crystals prepared by post growth diffusion doping or single crystals doped during growth by the Physical Vapor Transport method. Room temperature lifetime values between 6 and 8 microseconds were measured for samples with Cr (2+) concentrations from low 10 (exp 17) to high 10 (exp 18) per cubic centimeter range. Lifetime data taken down to 78 K was found to be rather temperature independent, reconfirming previous reports indicating a quantum yield of the corresponding emission of close to 100% at room temperature. A strong decrease in the room temperature lifetime was found for chromium concentrations higher than 10 (exp 19) per cubic centimeter.

Burger, A.↗
NASA NTRS2000

The Preparation Conditions of Chromium Doped ZnSe and Their Effect on the Infrared Luminescence Properties

We report the investigation by photoluminescence lifetime measurements of the near-IR emissions from a series of chromium-doped ZnSe samples, correlated to their preparation conditions. The samples were polycrystalline or single crystals prepared by post growth diffusion doping or single crystals doped during growth by the physical vapor transport method. Room temperature lifetime values between 6 and 8 micro seconds were measured for samples with Cr2+ from low 10(exp 17) to high 10(exp 18) / cubic cm range. Lifetime data taken down to 78 K was found to be rather temperature independent, reconfirming previous reports indicating a quantum yield of the corresponding emission of close to 100% at room temperature. A strong decrease in the room temperature lifetime was found for chromium concentrations higher than 10(exp 19) / cubic CM.

Burger, A.↗
NASA NTRS2004

Te-and Zn-Doped InSb Crystals Grown in Microgravity

In 2002, within the SUBSA (Solidification Using a Baffle in Sealed Ampoules) investigation, seven doped InSb crystals were grown in microgravity at the International Space Station. The key goals of the SUBSA investigation are: (a) to clarify the origin of the melt convection in space laboratories; (b) to reduce melt convection to the level which allows reproducible diffusion-controlled segregation; (e) to explore the submerged baffle process and liquid encapsulation in microgravity. 30 crystal growth experiments were conducted in the ground unit, to optimize the design of flight ampoules and to test the transparent SUBSA furnace developed by TecMasters Inc. The specially designed furnace, allowed observation of the crystal growth process (melting, seeding, motion of the solid-liquid interface, etc.). In the summer of 2002, eight crystal growth experiments were conducted in the Microgravity Science Glovebox (MSG) facility at the ISS. Four Te-doped (k = 0.5) and three Zn-doped (k2.9) crystals were grown on undoped seeds. In one experiment, we were not able to seed and grow. The seven grown crystals were sectioned and analyzed using SIMS. The design of the SUBSA ampoules, the segregation data and the video images obtained during the SUBSA flight experiments will be presented and discussed.

Ostrogorsky, A. G.↗