SEARCH · Search NASA
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
Digital portion of power supply synchronizer used in forming subsystem on single silicon slice - logic design, interconnect pattern, nonlinear load switch and packaging
Switching and circuit studies for development of low input voltage converter and regulator
The Advanced Communications Technology Satellite (ACTS) to be launched in 1993 introduces several new technologies including a multibeam antenna (MBA) operating at Ka-band. The satellite is introduced briefly, and then the MBA, consisting of electrically similar 30 GHz received and 20 GHz transmit offset Cassegrain systems utilizing orthogonal linear polarizations, is described. Dual polarization is achieved by using one feed assembly for each polarization in conjunction with nested front and back subreflectors, the gridded front subreflector acting as a window for one polarization and a reflector for the other. The antennas produce spot beams with approximately 0.3 deg beamwidth and gains of approximately 50 dbi. High surface accuracy and high edge taper produce low sidelobe levels and high cross-polarization isolation. A brief description is given of several Ka-band components fabricated for ACTS. These include multiflare antenna feedhorns, beam-forming networks utilizing latching ferrite waveguide switches, a 30 GHz high mobility electron transmitter (HEMT) low-noise amplifier and a 20 GHz TWT power amplifier.
This presentation reviews the activities of the New Millennium Program (NMP) in validating advanced technologies for space missions. The focus of these breakthrough technologies are to enable new capabilities to fulfill the science needs, while reducing costs of future missions. There is a broad spectrum of NMP partners, including government agencies, universities and private industry. The DS-1 was launched on October 24, 1998. Amongst the technologies validated by the NMP on DS-1 are: a Low Power Electronics Experiment, the Power Activation and Switching Module, Multi-Functional Structures. The first two of these technologies are operational and the data analysis is still ongoing. The third program is also operational, and its performance parameters have been verified. The second program, DS-2, was launched January 3 1999. It is expected to impact near Mars southern polar region on 3 December 1999. The technologies used on this mission awaiting validation are an advanced microcontroller, a power microelectronics unit, an evolved water experiment and soil thermal conductivity experiment, Lithium-Thionyl Chloride batteries, the flexible cable interconnect, aeroshell/entry system, and a compact telecom system. EO-1 on schedule for launch in December 1999 carries several technologies to be validated. Amongst these are: a Carbon-Carbon Radiator, an X-band Phased Array Antenna, a pulsed plasma thruster, a wideband advanced recorder processor, an atmospheric corrector, lightweight flexible solar arrays, Advanced Land Imager and the Hyperion instrument
Kennedy Space Center specialists aided Space, Energy, Time Saving (SETS) Systems, Inc. in working out the problems they encountered with their new electronic "tankless" water heater. The flow switch design suffered intermittent problems. Hiring several testing and engineering firms produced only graphs, printouts, and a large expense, but no solutions. Then through the Kennedy Space Center/State of Florida Technology Outreach Program, SETS was referred to Michael Brooks, a 21-year space program veteran and flowmeter expert. Run throughout Florida to provide technical service to businesses at no cost, the program applies scientific and engineering expertise originally developed for space applications to the Florida business community. Brooks discovered several key problems, resulting in a new design that turned out to be simpler, yielding a 63 percent reduction in labor and material costs over the old design.
Improvements are made in a non-volatile magnetic random access memory. Such a memory is comprised of an array of unit cells, each having a Hall-effect sensor and a thin-film magnetic element made of material having an in-plane, uniaxial anisotropy and in-plane, bipolar remanent magnetization states. The Hall-effect sensor is made more sensitive by using a 1 m thick molecular beam epitaxy grown InAs layer on a silicon substrate by employing a GaAs/AlGaAs/InAlAs superlattice buffering layer. One improvement avoids current shunting problems of matrix architecture. Another improvement reduces the required magnetizing current for the micromagnets. Another improvement relates to the use of GaAs technology wherein high electron-mobility GaAs MESFETs provide faster switching times. Still another improvement relates to a method for configuring the invention as a three-dimensional random access memory.
An approach for predicting remaining useful life of power MOSFETs (metal oxide field effect transistor) devices has been developed. Power MOSFETs are semiconductor switching devices that are instrumental in electronics equipment such as those used in operation and control of modern aircraft and spacecraft. The MOSFETs examined here were aged under thermal overstress in a controlled experiment and continuous performance degradation data were collected from the accelerated aging experiment. Dieattach degradation was determined to be the primary failure mode. The collected run-to-failure data were analyzed and it was revealed that ON-state resistance increased as die-attach degraded under high thermal stresses. Results from finite element simulation analysis support the observations from the experimental data. Data-driven and model based prognostics algorithms were investigated where ON-state resistance was used as the primary precursor of failure feature. A Gaussian process regression algorithm was explored as an example for a data-driven technique and an extended Kalman filter and a particle filter were used as examples for model-based techniques. Both methods were able to provide valid results. Prognostic performance metrics were employed to evaluate and compare the algorithms.
We present the design and testing of spaceflight multiplexing kinetic inductance detector (KID) readout electronics for the PRobe far-Infrared Mission for Astrophysics (PRIMA). PRIMA is a mission proposed to the 2023 NASA Astrophysics Probe Explorer (APEX) Announcement of Opportunity that will answer fundamental questions about the formation of planetary systems, as well as the formation and evolution of stars, supermassive black holes, and dust over cosmic time. The readout electronics for PRIMA must be compatible with operation at Earth-Sun L2 and capable of multiplexing more than 1000 detectors over 2 GHz bandwidth while consuming around 30 W per readout chain. The electronics must also be capable of switching between the two instruments, which have different readout bands,: the hyperspectral imager (PRIMAger, 2.5-5.0 GHz) and the spectrometer (FIRESS, 0.4-2.4 GHz). We present the driving requirements, design, and measured performance of a laboratory brassboard system.
An intense femtosecond-laser excitation of a solid induces highly nonthermal conditions. In materials like silicon, laser-induced bond-softening leads to a highly incoherent ionic motion and eventually nonthermal melting. But is this outcome an inevitable consequence, or can it be controlled? Here, we performed ab initio molecular dynamics simulations of crystalline silicon after timed multiple femtosecond-laser pulse excitations with fluence above the nonthermal melting threshold. Our results demonstrate an excitation mechanism that pauses nonthermal melting and creates a metastable state instead, with an electronic structure similar to the ground state. This mechanism can be generalized to other materials, potentially enabling structural and/or electronic transitions to metastable phases in the high-excitation regime. In addition, our approach could be used to switch off nonthermal contributions in experiments, allowing reliable electron-phonon coupling constants to be obtained more easily.
All aerospace systems require power management and distribution (PMAD) between the energy and power source and the loads. The PMAD subsystem can be broadly described as the conditioning and control of unregulated power from the energy source and its transmission to a power bus for distribution to the intended loads. All power and control circuits for PMAD require electrical components for switching, energy storage, voltage-to-current transformation, filtering, regulation, protection, and isolation. Advanced electrical materials and component development technology is a key technology to increasing the power density, efficiency, reliability, and operating temperature of the PMAD. The primary means to develop advanced electrical components is to develop new and/or significantly improved electronic materials for capacitors, magnetic components, and semiconductor switches and diodes. The next important step is to develop the processing techniques to fabricate electrical and electronic components that exceed the specifications of presently available state-of-the-art components. The NASA Glenn Research Center's advanced electrical materials and component development technology task is focused on the following three areas: 1) New and/or improved dielectric materials for the development of power capacitors with increased capacitance volumetric efficiency, energy density, and operating temperature; 2) New and/or improved high-frequency, high-temperature soft magnetic materials for the development of transformers and inductors with increased power density, energy density, electrical efficiency, and operating temperature; 3) Packaged high-temperature, high-power density, high-voltage, and low-loss SiC diodes and switches.
Limiting circuit protects the main power supply of electronic modules and limits the current drawn by each module should a short circuit occur. It limits current within one mA when used with direct current of either polarity, or with pulse or ac power sources from direct current to 100 kHz.
The sub-Terahertz and Terahertz bands play a critical role in next-generation wireless communication and sensing technologies, thanks to the large amount of available bandwidth in this spectral regime. While long-wavelength (microwave to mm-Wave) and short-wavelength (near-infrared to ultraviolet) devices are well-established and studied, the sub-THz to THz regime remains relatively underexplored and underutilized. Traditional approaches used in the aforementioned spectral regions are more difficult to replicate in the THz band, leading to the need for the development of novel devices and structures that can manipulate THz radiation effectively. Herein a novel organic, solid-state electrochemical device is presented, capable of achieving modulation depths of over 90% from ≈500 nm of a conducting polymer that switches conductivity over a large dynamic range upon application of an electronically controllable external bias. The stability of such devices under long-term, repeated voltage switching, as well as continuous biasing at a single voltage, is also explored. Switching stabilities and long-term bias stabilities are achieved over two days for both use cases. Additionally, both depletion mode (always “ON”) and accumulation mode (always “OFF”) operation are demonstrated. These results suggest applications of organic electrochemical THz modulators in large area and flexible implementations.
A new switching phenomenon in metal-oxide semiconductor tunnel junction has been discovered. With a sufficiently large negative bias applied to the electrode, incident visible light of intensity greater than about 1 microW/sq cm causes the reverse-biased junction to switch from a low-current to a high-current state. It is believed that hot-electron-induced impact ionization provides the positive feedback necessary for switching, and causes the junction to remain in its high-current state after the optical excitation is removed. The junction may be switched back to the low-current state electrically. The basic junction characteristics have been measured, and a simple model for the switching phenomenon has been developed.
Chiral redox switches have been used to develop stimuli-responsive materials and organic electronics wherein small molecule chirality produces new functionality. Despite the widespread use of stable carbenes in redox-active materials and asymmetric synthesis, their integration into chiral redox switches remains largely unexplored. Herein, we show that chiral stable carbenes can be used to construct helically chiral overcrowded alkenes which function as three-state electrochiroptical switches. Redox-driven (de)aromatization triggers the reversible exchange of helical and axial chirality via a helically chiral π-radical cation. Due to dramatic changes in both electronic and geometric structure, including the inversion of helical chirality, each state exhibits distinct chiroptical properties. As a proof of concept, we demonstrate multiple cycles of electrochemical ON–OFF switching and sign inversion of the electronic circular dichroism response. Overall, this work establishes chiral stable carbenes as promising building blocks for chiral and redox-switchable materials.
The thermal response of the nighttime F region ionosphere to local heating by HF radio waves has been observed with the incoherent scatter radar at Arecibo, Puerto Rico. The observations consist of high-resolution space and time variation of the electron temperature as a high-power HF transmitter is switched on and off with a period 240 s. As soon as the HF transmitter is turned on, the electron temperature begins to rise rapidly in a narrow altitude region near 300 km, below the F2 layer peak. The electron temperature perturbation subsequently spreads over a broader altitude region. The observations are compared with the anticipated thermal response of the ionosphere based on numerical solutions of the coupled time-dependent heat conduction equations for the electron and composite ion gases and are found to be in good agreement over the entire altitude region covered by the observations.
Abstract Resistive switching (RS) devices with ultra‐low‐voltage threshold and reliable switching repeatability exhibits great potential applications in energy‐efficient data storage and neuromorphic computing. Understanding switching mechanisms at nanoscale is critical to design RS devices with improved performance. In this work, a lamella memristive device using focused ion beam (FIB) method based on the metal/TiO x /TiN/Si structure device is fabricated. In situ transmission electron microscopy (TEM) and current–voltage ( I–V ) characteristic demonstrate that the lamella device shows a volatile RS behavior with a threshold switching at ≈ ± 0.4 V. In situ scanning transmission electron microscopy (STEM) experiments with electron energy loss spectroscopy (EELS) reveal that the charge carriers such as oxygen vacancies migrate under positive/negative DC bias and modulate Schottky barriers at the top and bottom metal/semiconductor interfaces. The RS mechanism of the lamella device is based on the Schottky barriers modulation and Joule heating assisted electric field triggered thermal runaway (FTTR) occurred at the metal/semiconductor interfaces. The fundamental insights gained from this study presents a perspective on interface‐type RS devices processing and opens up new technological opportunities of fabricating ultra‐low‐energy memristive devices.
Quantum materials with novel spin textures from strong spin-orbit coupling (SOC) are essential components for a wide array of proposed spintronic devices. Topological insulators have a necessary strong SOC that imposes a unique spin texture on topological states and Rashba states that arise on the boundary, but there is no established methodology to control the spin texture reversibly. Here, it is demonstrated that functionalizing Bi 2 Se 3 films by altering the step-edge termination directly changes the strength of SOC and thereby modifies the Rashba strength of 1D edge states. Scanning tunneling microscopy/spectroscopy shows that these Rashba edge states arise and subsequently vanish through the Se functionalization and reduction process of the step edges. The observations are corroborated by density functional theory calculations, which show that a subtle chemical change of edge termination fundamentally alters the underlying electronic structure. Importantly, fully reversible and repeatable switching of Rashba edge states across multiple cycles at room temperature is experimentally demonstrated. The results imply Se functionalization as a practical method to control SOC and spin texture of quantum states in topological insulators.
In recent years, critical infrastructure and power grids have increasingly been targets of cyber-attacks, causing widespread and extended blackouts. Digital substations are particularly vulnerable to such cyber incursions, jeopardizing grid stability. This paper addresses these risks by proposing a cybersecurity framework that leverages software-defined networking (SDN) to bolster the resilience of substations based on the IEC- 61850 standard. The research introduces a strategy involving smart cyber switching (SCS) for mitigation and concurrent intelligent electronic device (CIED) for restoration, ensuring ongoing operational integrity and cybersecurity within a substation. The SCS framework improves the physical network’s behavior (i.e., leveraging commercial SDN capabilities) by incorporating an adaptive port controller (APC) module for dynamic port management and an intrusion detection system (IDS) to detect and counteract malicious IEC-61850-based sampled value (SV) and generic object-oriented system event (GOOSE) messages within the substation’s communication network. The framework’s effectiveness is validated through comprehensive simulations and a hardware-in-the-loop (HIL) testbed, demonstrating its ability to sustain substation operations during cyber-attacks and significantly improve the overall resilience of the power grid.