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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 235 records · Page 13
All sourcesNASA NTRSDOE OSTI
NASA NTRS2013

Forced Ion Migration for Chalcogenide Phase Change Memory Device

Non-volatile memory devices with two stacked layers of chalcogenide materials comprising the active memory device have been investigated for their potential as phase-change memories. The devices tested included GeTe/SnTe, Ge2Se3/SnTe, and Ge2Se3/SnSe stacks. All devices exhibited resistance switching behavior. The polarity of the applied voltage with respect to the SnTe or SnSe layer was critical to the memory switching properties, due to the electric field induced movement of either Sn or Te into the Ge-chalcogenide layer. One embodiment of the invention is a device comprising a stack of chalcogenide-containing layers which exhibit phase-change switching only after a reverse polarity voltage potential is applied across the stack causing ion movement into an adjacent layer and thus "activating" the device to act as a phase-change random access memory device or a reconfigurable electronics device when the applied voltage potential is returned to the normal polarity. Another embodiment of the invention is a device that is capable of exhibiting more than two data states.

Campbell, Kristy A↗
DOE OSTI2022

Using distributed power electronics-based devices to improve the voltage and frequency stability of distribution systems

Methods include, in response to a line frequency variation of a power grid, adjusting a voltage setpoint of a voltage regulator coupled to the power grid at a grid edge to maintain a voltage at the grid edge, wherein the adjusting the regulated voltage setpoint is configured to reduce the line frequency variation to stabilize the line frequency of the power grid. Apparatus include a voltage regulator configured to couple to a power grid at a grid edge and to maintain a voltage at the grid edge, wherein the voltage regulator is further configured to adjust a voltage setpoint of a voltage regulator in response to a line frequency variation of the power grid to reduce the line frequency variation and stabilize the line frequency of the power grid.

Du, Wei↗
DOE OSTI2025

Nanoscale Editing of Multi and Single Layer Tungsten Disulfide via Gas‐Assisted Focused Electron Beam Induced Etching for Device Prototyping

Focused electron beam induced etching (FEBIE) with XeF 2 (xenon difluoride) precursor is conducted on multi-layer exfoliated WS 2 (tungsten disulfide) and monolayer WS 2 grown by chemical vapor deposition (CVD). The films are characterized by atomic force microscopy (AFM) and Raman and photoluminescence (PL) spectroscopy post-etching. The etch rates/efficiencies are reported as a function of electron beam energy, current, dwell time, and XeF 2 pressure. Bulk film Raman spectra are unchanged post-FEBIE, indicating minimal subsurface damage. Monolayer WS 2 shows a decrease in Raman and PL intensity post-FEBIE, with a dose-to-clear of ≈2 nC µm −2 . The study reveals regimes affected by the various mass transport contributions such as refresh time and the ratio of electrons/XeF 2 . Spontaneous etching was discovered during FEBIE of large patterned areas due to the long frame/refresh times. Density functional theory and ab initio molecular dynamics simulations compares desorption of SF x and WF x molecules from pristine WS 2 basal planes and pore edges, revealing the spontaneous etching is consistent with etching of partially etched monolayers during each frame. Single-line etching width of 21 nm, and patterning flakes into 100 nm wide channels are demonstrated. In conclusion, this work demonstrates the possibility of editing WS 2 flakes into electronic devices of arbitrary dimensions for semiconductor applications.

2D materials↗
DOE OSTI2022

Ab initio simulations of metal contacts for graphene-based devices

The precise atomic structure of a metal contact significantly affects the performance of nanoscale electronic devices. We use an accurate, DFT-based non-equilibrium Green’s function method to evaluate various metal contacts with graphene or graphene nanoribbons. Furthermore, for surface metal contacts not chemically bound to graphene, Ti contacts have lower resistance than those of Au, Ca, Ir, Pt, and Sr. However, as an edge contact, Ti has larger resistance than Au. Bridging O atoms at Ti and Au edge contacts lowers the transmission by over 30%.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
NASA NTRS2010

Electrically Variable Resistive Memory Devices

Nonvolatile electronic memory devices that store data in the form of electrical- resistance values, and memory circuits based on such devices, have been invented. These devices and circuits exploit an electrically-variable-resistance phenomenon that occurs in thin films of certain oxides that exhibit the colossal magnetoresistive (CMR) effect. It is worth emphasizing that, as stated in the immediately preceding article, these devices function at room temperature and do not depend on externally applied magnetic fields. A device of this type is basically a thin film resistor: it consists of a thin film of a CMR material located between, and in contact with, two electrical conductors. The application of a short-duration, low-voltage current pulse via the terminals changes the electrical resistance of the film. The amount of the change in resistance depends on the size of the pulse. The direction of change (increase or decrease of resistance) depends on the polarity of the pulse. Hence, a datum can be written (or a prior datum overwritten) in the memory device by applying a pulse of size and polarity tailored to set the resistance at a value that represents a specific numerical value. To read the datum, one applies a smaller pulse - one that is large enough to enable accurate measurement of resistance, but small enough so as not to change the resistance. In writing, the resistance can be set to any value within the dynamic range of the CMR film. Typically, the value would be one of several discrete resistance values that represent logic levels or digits. Because the number of levels can exceed 2, a memory device of this type is not limited to binary data. Like other memory devices, devices of this type can be incorporated into a memory integrated circuit by laying them out on a substrate in rows and columns, along with row and column conductors for electrically addressing them individually or collectively.

Liu, Shangqing↗
NASA NTRS2002

Synthesis and Characterization of a Novel -D-B-A-B- Block Copolymer System for Light Harvesting Applications

Supra-molecular or nano-structured electro-active polymers are potentially useful for developing variety inexpensive and flexible shaped opto-electronic devices. In the case of organic photovoltaic materials or devices, for instance, photo induced electrons and holes need to be separated and transported in organic acceptor (A) and donor (D) phases respectively. In this paper, preliminary results of synthesis and characterizations of a coupled block copolymers containing a conjugated donor block RO-PPV and a conjugated acceptor block SF-PPV and some of their electronic/optical properties are presented. While the donor block film has a strong PL emission at around 570 nm, and acceptor block film has a strong PL emission at around 590 nm, the PL emissions of final -B-D-B-A- block copolymer films were quenched over 99%. Experimental results demonstrated an effective photo induced electron transfer and charge separation due to the interfaces of donor and acceptor blocks. The system is very promising for variety light harvesting applications, including "plastic" photovoltaic devices.

Sun, Sam-Shajing↗
DOE OSTI2025

Benchmarking Density Functional Theory Methods for Efficient Calculations of a Strongly Correlated Li 1– x Ni 1– y O 2−δ System

Transition metal oxides (TMOs), such as LiNiO 2 , are promising candidates for energy storage and electronic devices due to their unique electronic properties, exceptional physical and chemical characteristics, and ability to adopt multiple oxidation states. However, accurately predicting their properties using mean-field density functional theory (DFT) is challenging due to the presence of strongly correlated d-electrons and the complex interplay between their structural, electronic, and magnetic responses. These challenges are further exacerbated by the need to model defects, surfaces, and interfaces, which require computationally efficient, large-scale simulations. To address these issues, we carry out a benchmark study on the Li 1–x NiO 2 system, evaluating the performance of several popular functionals. Our findings demonstrate that combining SCAN functional relaxation with single-step HSE calculations provides a practical and scalable computational strategy. This approach balances accuracy and efficiency, enabling high-throughput simulations of strongly correlated TMOs and improved predictive modeling capability of TMOs for practical applications.

25 ENERGY STORAGE↗
DOE OSTI2021

Monolayer 2D semiconducting tellurides for high-mobility electronics

Discovery and design of two-dimensional (2D) materials with suitable band gaps and high carrier mobility are of vital importance for the photonics, optoelectronics, and high-speed electronics. In this work, based on first principles calculations using density functional theory with Perdew-Burke-Ernzerhof and Heyd-Scuseria-Ernzerhoffunctionals, we introduce a family of monolayer isostructural semiconducting tellurides MNTe 4 , with M={Ti,Zr,Hf} and N={Si,Ge}. We find that these compounds have been identified to possess direct band gaps from 1.0 to 1.31 eV, which are well suited for photonics and optoelectronics applications. Additionally, anisotropic in-plane transport behavior is observed, and small electron and hole (0.11–0.15m e ) effective masses are identified along the dominant transport direction. Ultrahigh carrier mobility is predicted for this family of 2D compounds, which host great promise for potential applications in high-speed electronic devices. Furthermore, detailed analysis of electronic structures reveals the origins of the promising properties of this unique class of 2D telluride materials.

2-dimensional systems↗
NASA NTRS2004

Web Growth Used to Confine Screw Dislocations to Predetermined Lateral Positions in 4H-SiC Epilayers

Silicon-carbide- (SiC-) based power devices could enable substantial aerospace electronics benefits over today's silicon-based electronics. However, present-day SiC wafers contain electrically harmful dislocations (including micropipes) that are unpredictably distributed in high densities across all commercial 4H- and 6H-SiC wafers. The NASA Glenn Research Center recently demonstrated a crystal growth process that moves SiC wafer dislocations to predetermined lateral positions in epitaxial layers so that they can be reproducibly avoided during subsequent SiC electronic device fabrication. The process starts by reactive ion etching mesa patterns with enclosed trench regions into commercial on-axis (0001) 4H- or 6H-SiC substrates. An example of a pregrowth mesa geometry with six enclosed triangular-shaped trench regions is shown. After the etch mask is stripped, homoepitaxial growth is carried out in pure stepflow conditions that enable thin cantilevers to grow laterally from the tops of mesas whose pregrowth top surfaces are not threaded by substrate screw dislocations. The image in the bottom figure shows the postgrowth structure that forms after the lateral cantilevers expand to coalesce and completely roof over each of the six triangular trench regions. Atomic force microscope (AFM) measurements of the roof revealed that three elementary screw dislocation growth spirals, each shown in the AFM insets of the bottom image on the previous page, formed in the film roof at three respective points of cantilever film coalescence. The image above shows the structure following an etch in molten potassium hydroxide (KOH) that produced surface etch pits at the dislocation defects. The larger KOH etch pits--S1, S2, and S3--shown in this image correspond to screw dislocations relocated to the final points of cantilever coalescence. The smaller KOH etch pits are consistent with epilayer threading edge dislocations from the pregrowth substrate mesa (P1, P3, and P4) and a final cantilever coalescence point (P2). No defects (i.e., no etch pits) are observed in other cantilevered portions of the film surface. On the basis of the principle of dislocation Burgers vector conservation, we hypothesize that all vertically propagating substrate dislocations in an enclosed trench region become combined into a single dislocation in the webbed film roof at the point of final roof coalescence. The point of final roof coalescence, and therefore the lateral location of a webbed roof dislocation, can be designed into the pregrowth mesa pattern. Screw dislocations with predetermined lateral positions can then be used to provide the new growth steps necessary for growing a 4H/6H-SiC epilayer with a lower dislocation density than the substrate. Devices fabricated on top of such films can be positioned to avoid the preplaced dislocations.

Powell, J. Anthony↗
NASA NTRS2007

High-Power, High-Efficiency Ka-Band Space Traveling-Wave Tube

The L-3 Communications Model 999H traveling-wave tube (TWT) has been demonstrated to generate an output power of 144 W at 60-percent overall efficiency in continuous-wave operation over the frequency band from 31.8 to 32.3 GHz. The best TWT heretofore commercially available for operation in the affected frequency band is characterized by an output power of only 35 W and an efficiency of 50 percent. Moreover, whereas prior TWTs are limited to single output power levels, it has been shown that the output power of the Model 999H can be varied from 54 to 144 W. A TWT is a vacuum electronic device used to amplify microwave signals. TWTs are typically used in free-space communication systems because they are capable of operating at power and efficiency levels significantly higher than those of solid-state devices. In a TWT, an electron beam is generated by an electron gun consisting of a cathode, focusing electrodes, and an anode. The electrons pass through a hole in the anode and are focused into a cylindrical beam by a stack of periodic permanent magnets and travel along the axis of an electrically conductive helix, along which propagates an electromagnetic wave that has been launched by an input signal that is to be amplified. The beam travels within the helix at a velocity close to the phase velocity of the electromagnetic wave. The electromagnetic field decelerates some of the electrons and accelerates others, causing the beam to become formed into electron bunches, which further interact with the electromagnetic wave in such a manner as to surrender kinetic energy to the wave, thereby amplifying the wave. The net result is to amplify the input signal by a factor of about 100,000. After the electrons have passed along the helix, they impinge on electrodes in a collector. The collector decelerates the electrons in such a manner as to recover most of the remaining kinetic energy and thereby significantly increase the power efficiency of the TWT.

Krawczyk, Richard↗
NASA NTRS2008

Aerospace Sensor Systems: From Sensor Development To Vehicle Application

This paper presents an overview of years of sensor system development and application for aerospace systems. The emphasis of this work is on developing advanced capabilities for measurement and control of aeropropulsion and crew vehicle systems as well as monitoring the safety of those systems. Specific areas of work include chemical species sensors, thin film thermocouples and strain gages, heat flux gages, fuel gages, SiC based electronic devices and sensors, space qualified electronics, and MicroElectroMechanical Systems (MEMS) as well as integrated and multifunctional sensor systems. Each sensor type has its own technical challenges related to integration and reliability in a given application. The general approach has been to develop base sensor technology using microfabrication techniques, integrate sensors with "smart" hardware and software, and demonstrate those systems in a range of aerospace applications. Descriptions of the sensor elements, their integration into sensors systems, and examples of sensor system applications will be discussed. Finally, suggestions related to the future of sensor technology will be given. It is concluded that smart micro/nano sensor technology can revolutionize aerospace applications, but significant challenges exist in maturing the technology and demonstrating its value in real-life applications.

Hunter, Gary W.↗
DOE OSTI2022

Advanced Diagnostics of Broad Spectrum Multipactor

Multipactor is a resonance event between electron emission and RF fields causing exponential secondary electron re-emission growth when the secondary electron yield of the primary electron impact energy exceeds unity. Multipactor is a serious problem in vacuum electron devices (VEDs) such as particle accelerators, radars, electronic warfare systems, directed energy devices, and even Hall effect thrusters. It also poses an even greater threat to space communication systems where high power, multi-channel links are required. The UC Davis and SLAC team will conduct basic research to advance the fundamental understanding of multipactor physics by developing and carrying out full spectrum, radio frequency (RF) laboratory tests aimed at understanding both single and two-surface multipactor phenomena and at evaluating novel multipactor mitigation approaches for accelerator, space-based RF systems, as well as high power microwave (HPM) applications.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Cooling performance of an active-passive hybrid composite phase change material (HcPCM) finned heat sink: Constant operating mode

Here, the present study explores a hybrid thermal management technology based on air cooling and hybrid composite phase change material (HcPCM) filled finned heat sink for cooling performance of lower to medium heat flux dissipating electronic devices. Two-dimensional numerical simulations are conducted to study the conjugate heat transfer effects of three types of finned heat sink: air-cooled finned heat sink, HcPCM-cooled finned heat sink, and hybrid (air-HcPCM) cooled finned heat sink. A heat sink with a constant volume faction of plate-fins is designed in all cases and simultaneous effects of hybrid nanoparticles and air are investigated to keep the heat sink temperature at safe operating conditions between 40–60°C. The effect of air is incorporated into the heat sink by applying the convective heat transfer coefficient of h c = 10–100W /m 2 .K which tends to create the natural convection and forced convection heat transfer characteristics. The heat flux is varied from 25–40kW /m 2 in the current study. The hybrid nanoparticles of carbon additives (GO and MWCNTs) are dispersed into the RT-35HC, used as a PCM, with a volume fraction of 0% to 6%. Transient simulations are carried out using COMSOL Multiphysics to solve the governing equations for PCM based conjugate heat transfer model. The results showed that forced convection heat transfer improved the cooling performance of the hybrid heat sink compared to natural convection heat transfer. The addition of nanoparticles further enhanced thermal enhancement and uniform melting distribution of PCM inside the finned heat sink. The h c between 30 to 50W/m 2 .K shows optimized values for forced convection heat transfer operating conditions. The volume fraction of 2% of GO+MWCNTs nanoparticles in recommended or optimum concentration for uniform melting of PCM inside the finned heat sink.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Growth Optimization and Device Integration of Narrow‐Bandgap Graphene Nanoribbons

Abstract The electronic, optical, and magnetic properties of graphene nanoribbons (GNRs) can be engineered by controlling their edge structure and width with atomic precision through bottom‐up fabrication based on molecular precursors. This approach offers a unique platform for all‐carbon electronic devices but requires careful optimization of the growth conditions to match structural requirements for successful device integration, with GNR length being the most critical parameter. In this work, the growth, characterization, and device integration of 5‐atom wide armchair GNRs (5‐AGNRs) are studied, which are expected to have an optimal bandgap as active material in switching devices. 5‐AGNRs are obtained via on‐surface synthesis under ultrahigh vacuum conditions from Br‐ and I‐substituted precursors. It is shown that the use of I‐substituted precursors and the optimization of the initial precursor coverage quintupled the average 5‐AGNR length. This significant length increase allowed the integration of 5‐AGNRs into devices and the realization of the first field‐effect transistor based on narrow bandgap AGNRs that shows switching behavior at room temperature. The study highlights that the optimized growth protocols can successfully bridge between the sub‐nanometer scale, where atomic precision is needed to control the electronic properties, and the scale of tens of nanometers relevant for successful device integration of GNRs.

36 MATERIALS SCIENCE↗
NASA NTRS2015

Compendium of Current Single Event Effects for Candidate Spacecraft Electronics for NASA

NASA spacecraft are subjected to a harsh space environment that includes exposure to various types of ionizing radiation. The performance of electronic devices in a space radiation environment are often limited by their susceptibility to single event effects (SEE). Ground-based testing is used to evaluate candidate spacecraft electronics to determine risk to spaceflight applications. Interpreting the results of radiation testing of complex devices is and adequate understanding of the test condition is critical. Studies discussed herein were undertaken to establish the application-specific sensitivities of candidate spacecraft and emerging electronic devices to single-event upset (SEU), single-event latchup (SEL), single-event gate rupture (SEGR), single-event burnout (SEB), and single-event transient (SET). For total ionizing dose (TID) and displacement damage dose (DDD) results, see a companion paper submitted to the 2015 Institute of Electrical and Electronics Engineers (IEEE) Nuclear and Space Radiation Effects Conference (NSREC) Radiation Effects Data Workshop (REDW) entitled "compendium of Current Total Ionizing Dose and Displacement Damage for Candidate Spacecraft Electronics for NASA by M. Campola, et al.

spacecraft electronics↗