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At least 235 records · Page 13

Properties of the Flight Model Gas Electron Multiplier for the GEMS Mission

We present the gain properties of the gas electron multiplier (GEM) foil in pure dimethyl ether (DME) at 190 Torr. The GEM is one of the micro pattern gas detectors and it is adopted as a key part of the X-ray polarimeter for the GEMS mission. The X-ray polarimeter is a time projection chamber operating in pure DME gas at 190 Torr. We describe experimental results of (1) the maximum gain the GEM can achieve without any discharges, (2) the linearity of the energy scale for the GEM operation, and (3) the two-dimensional gain variation of the active area. First, our experiment with 6.4 keV X-ray irradiation of the whole GEM area demonstrates that the maximum effective gain is 2 x 10(exp 4) with the applied voltage of 580 V. Second, the measured energy scale is linear among three energies of 4.5, 6.4, and 8.0 keV. Third, the two-dimensional gain mapping test derives the standard deviation of the gain variability of 7% across the active area.

gas electron multiplier (GEM)↗

Electron acceleration in flares inferred from radio and hard X-ray emissions

Properties of electron acceleration in flares, especially the density structure in the acceleration region, are deduced from a correlation study between decimetric type III, spike, and hard X-ray (HXR) bursts. The high association rate found (71 percent) strongly suggests that spikes also originate from energetic electrons. Spikes and type III bursts have been found to be easily identified by their different polarizations. The two types of emission generally do not overlap in frequency. A reliable lower limit to the density is derived from the starting frequency of type III and U bursts. The spike emission very likely yields an upper limit. The density inhomogeneity in the acceleration region spans more than one order of magnitude and is more than one order of magnitude larger in the associated type U sources. A peak-to-peak correlation does not always exist between type III, spike and HXR bursts. This discrepancy can be interpreted in terms of the different source conditions and propagation properties. Whereas spikes need special conditions to become visible, type III and peaks of HXR may be the product of many elementary accelerations.

Benz, A. O.↗

New secondary batteries utilizing electronically conductive polymer cathodes

The objectives of this project are to characterize the transport properties in electronically conductive polymers and to assess the utility of these films as cathodes in lithium/polymer secondary batteries. During this research period, progress has been made in a literature survey of the historical background, methods of preparation, the physical and chemical properties, and potential technological applications of polythiophene. Progress has also been made in the characterization of polypyrrole flat films and fibrillar films. Cyclic voltammetry and potential step chronocoulometry were used to gain information on peak currents and potentials switching reaction rates, charge capacity, and charge retention. Battery charge/discharge studies were also performed.

Martin, Charles R.↗

Scalar Atomic Defect-Based Solid-State Self-calibrating Magnetometer (3SM) for Space Plasma Analysis

The Earth’s magnetosphere is a system of multiple, co-located particle populations interacting via plasma waves. Things to understand are driving processes, radiation belt and ring current issues, auroral physics, internal plasma processes, and magnetosphere-ionosphere mapping issues. These plasma-physics processes enable the Earth’s magnetosphere to evolve in response to temporal changes in the solar wind and they underlie the phenomena of space weather, which impacts spacecraft systems, astronauts, radio communications, and ground based electric-power grids. The objective of 3SM is to measure magnetic field strength and to calibrate the Vector Magnetometer (VM) device to maintain absolute accuracy during a mission. The 3SM features make the instrument preferably suited not only for the traditional role of scalar magnetometers as absolute references for the calibration of the on-board vector instruments, but also for extended operational capacities, such as higher frequency scalar measurements (of potential interest for magnetosphere studies for the low frequency part of the spectrum) or autonomous scalar / vector operations. Diamond has been the solid-state platform of choice for quantum device technologies for some time, however, it suffers from difficulties such as scalability, integration, and cost. While the diamond platform is very useful for quantum technologies, further development is needed to make it viable. The material platform of choice for NASA Glenn’s Quantum Sensing And Spin Physics (Q-SASP) is silicon carbide (SiC). This is due to the much higher industry development of the SiC material platform for high-power and high-temperature electronics. It leverages both the decades-long SiC development expertise and infrastructure at NASA Glenn and its growing capabilities in quantum metrology. To make SiC devices usable for quantum technologies such as quantum sources, a much deeper understanding of defects is needed. Q-SASP is developing quantum metrology capabilities to evaluate the energy structure, defect formation energy, band structure augmentation, generation/recombination rates, and limits of dipole-dipole coupling in non-metal implanted SiC devices. This can be achieved by analysis of zero-field splitting, low-field resonance, and singlet-triplet mixing through various forms of Electrically Detectable Magnetic Resonance (EDMR) and Near-Zero Field Magnetic Resonance (NZFMR) spectroscopy. This work will discuss recent system developments, device developments, computational modeling, and spectroscopy results and analysis of defects created by non-metal implantations in SiC devices. The defect formation energies of V Si ,V C , V C V Si , N C V Si , N Si , N C in 4H-SiC are previously reported values in other research [2]-[3]. The defect formation energies of PSi and PC were calculated in GPAW [fig 1A]. The basic underlying mechanism of the zero-field phenomenon is the mixing of singlet and triplet states [4]-[5]. In most spin-dependent transport, two electron spins are involved, and thus one must consider each of their interactions with the field. We investigated the electronic and magnetic properties of 4H-SiC and 6H-SiC. The defect formation energy helps us determine what types of defects we are observing in the SiC EDMR experiment. They have very low formation energy (it is negative). The phosphorus substitution in 4H-SiC is a very stable defect. The band diagrams provide us with vital information about how the electronic properties of SiC (such as band gap) change as we add non-metal defects. The zero-field splitting parameters allow us to study the inflection point in the NZFMR [fig 1B]. We clearly observed zero-field splitting. We also noted that the zero-field splitting remained constant with changing bias. We aspect it zero-field splitting to remain constant while the hyperfine and exchange interaction perturbations shift under the influence of an external magnetic field. This is the essence of quantum magnetometry and self-calibration.

space plasma↗

The electronic structure and second-order nonlinear optical properties of donor-acceptor acetylenes - A detailed investigation of structure-property relationships

A series of donor-acceptor acetylene compounds was synthesized in which systematic changes in both the conjugation length and the donor-acceptor strength were made. The effect of these structural changes on the spectroscopic and electronic properties of the molecules and, ultimately, on the measured second-order molecular hyperpolarizabilities (beta) was investigated. It was found that increases in the donor-acceptor strength resulted in increases in the magnitude of beta. For this class of molecules, the increase is dominated by the energy of the intramolecular charge-transfer transition, while factors such as the ground to excited-state dipole moment change and the transition-moment integral are much less important. Increasing the conjugation length from one to two acetylene linkers did not result in an increase in the value of beta; however, beta increased sharply in going from two acetylenes to three. This increase is attributed to the superposition of several nearly isoenergetic excited states.

Stiegman, A. E.↗

Theoretical Study of Indium Compounds of Interest for Organometallic Chemical Vapor Deposition

The structural. electronic and therinochemical properties of indium compounds which are of interest in halide transport and organometallic chemical vapor deposition processes have been studied by ab initio and statistical mechanics methods. The compounds reported include: indium halides and hydrides (InF, InCl, InCl3, InH, InH2, InH3); indium clusters (In2, In3); methylindium, dimethylindium, and their hydrogen derivatives [In(CH3), In(CH3)H, In(CH3)H2, In(CH3)2, In(CH3)2H]; dimethyl-indium dimer [In2(CH3)4], trimethyl-indium [In(CH3)3]; dehydrogenated methyl, dimethyl and trimethylindium [In(CH3)2CH2, In(CH3)CH2, In(CH2)], trimethylindium adducts with ammonia, trimethylamine and hydrazine [(CH3)3In:NH3, (CH3)3In:N(CH3)3, (CH3)3In:N(H2)N(H2)]; dimethylamino-indium and methylimino-indium [In(CH3)2(NH2), In(CH3)(NH)]; indium nitride and indium nitride dimer (InN, In2N2), indium phosphide, arsenide and antimonide ([InP, InAs, InSb). The predicted electronic properties are based on density functional theory calculations; the calculated thermodynamic properties are reported following the format of the JANAF (Joint Army, Navy, NASA, Air Force) Tables. Equilibrium compositions at two temperatures (298 and 1000 K) have been analyzed for groups of competing simultaneous reactions.

Cardelino, B. H.↗

Energetic Electrons in Dipolarization Events: Spatial Properties and Anisotropy

Using the electromagnetic fields of an MHD simulation of magnetotail reconnection, flow bursts, and dipolarization, we further investigate the acceleration of electrons to suprathermal energies. Particular emphasis is on spatial properties and anisotropies as functions of energy and time. The simulation results are compared with Time History of Events and Macroscale Interactions during Substorms observations. The test particle approach successfully reproduces several observed injection features and puts them into a context of spatial maps of the injection region(s): a dominance of perpendicular anisotropies farther down the tail and closer to the equatorial plane, an increasing importance of parallel anisotropy closer to Earth and at higher latitudes, a drop in energy fluxes at energies below approximately 10 keV, coinciding with the plasma density drop, together with increases at higher energy, a triple peak structure of flux increases near 0 deg, 90 deg, and 180 deg, and a tendency of flux increases to extend to higher energy closer to Earth and at lower latitudes. We identified the plasma sheet boundary layers and adjacent lobes as a main source region for both increased and decreased energetic electron fluxes, related to the different effects of adiabatic acceleration at high and low energies. The simulated anisotropies tend to exceed the observed ones, particularly for perpendicular fluxes at high energies. The most plausible reason is that the MHD simulation lacks the effects of anisotropy-driven microinstabilities and waves, which would reduce anisotropies.

anisotropy↗

Electron observations in the solar wind and magnetosheath.

Electron temperature measurements taken by a triaxial electron analyzer on Ogo 5 in the solar wind and in the magnetosheath are interpreted. In the interplanetary medium, observations made on the bow shock connected lines of magnetic force have been separated from those made on non-bow-shock connected lines. The dependence of electron thermal properties on the local field geometry is discussed together with features of electron temperature and density discontinuities across the bow shock. The velocity distribution function is characterized together with temperature and density variations in a part of the dawn magnetosheath.

Scudder, J. D.↗

Solar wind stream interfaces

Results are presented for a superposed epoch analysis of discontinuous solar wind interfaces. The average time-space profiles of stream interfaces are discussed with reference to fluid properties (flow speed, pressure ridge, density, electron and proton temperatures) and kinetic properties (electron core and halo, flow speed fluctuations, electron heat flux, alpha particles). Other aspects of stream interfaces are described, such as the persistence of individual interfaces, shock associations, the sector boundaries of the interplanetary magnetic field, and sudden impulses in the geomagnetic field. Interface position is considered in terms of the observed temperature jump. A conceptual model of high-speed stream evolution is proposed.

Gosling, J. T.↗

Investigation of Alpha Silicon Carbide / Carbon Fiber Proposed (2H & 6H-SiC) / C

A commercially available alpha silicon carbide coated carbon 12k fiber tow was subjected to rigorous inspection and testing. The pyrolized polyacrylonitrile (PAN) fiber had gone through a conversion process that resulted in a thin layer of SiC forming on the exterior of the fiber. The fibers? surface was characterized by x-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES) and scanning electron microscopy (SEM). Powdered x-ray diffraction (XRD) examined the bulk material properties. Transmission electron microscopy (TEM) coupled with energy-dispersive X-ray spectroscopy (EDS) examined the crystallinity of the SiC. A number of pristine samples were used to determine elongation rate and tensile strength.

Trunek, Andrew↗

Thermophysical aspects of re-entry flows

The present conference discusses low density aerothermodynamics, the drag of bodies in rarefied hypersonic flow, transitional hypervelocity aerodynamic simulation and scaling, high temperature kinetics and transport properties, electron-nitrogen molecule collisions in high temperature nonequilibrium air, theoretical studies of dissociative recombination, the transport properties of some atom/ion interactions in air, and the interaction energies, dipole transition moments, and transport cross sections of N(+)-N and O(+)-O. Also discussed are the results of studies of potential fluid mechanisms for enhanced stagnation heating, vortex-induced leeward heating on a biconic at Mach 6 and 10, the effects of surface discontinuities on convective heat transfer in hypersonic flow, computational convergence in chemical reacting flows, and three-dimensional viscous shock layer applications for the Space Shuttle Orbiter.

Moss, J. N.↗

Fault handling schemes in electronic systems with specific application to radiation tolerance and VLSI design

Naturally occurring space radiation particles can produce transient and permanent changes in the electrical properties of electronic devices and systems. In this work, the transient radiation effects on DRAM and CMOS SRAM were considered. In addition, the effect of total ionizing dose radiation of the switching times of CMOS logic gates were investigated. Effects of transient radiation on the column and cell of MOS dynamic memory cell was simulated using SPICE. It was found that the critical charge of the bitline was higher than that of the cell. In addition, the critical charge of the combined cell-bitline was found to be dependent on the gate voltage of the access transistor. In addition, the effect of total ionizing dose radiation on the switching times of CMOS logic gate was obtained. The results of this work indicate that, the rise time of CMOS logic gates increases, while the fall time decreases with an increase in total ionizing dose radiation. Also, by increasing the size of the P-channel transistor with respect to that of the N-channel transistor, the propagation delay of CMOS logic gate can be made to decrease with, or be independent of an increase in total ionizing dose radiation. Furthermore, a method was developed for replacing polysilicon feedback resistance of SRAMs with a switched capacitor network. A switched capacitor SRAM was implemented using MOS Technology. The critical change of the switched capacitor SRAM has a very large critical charge. The results of this work indicate that switched capacitor SRAM is a viable alternative to SRAM with polysilicon feedback resistance.

Attia, John Okyere↗

Instrumentation for Studies of Electron Emission and Charging From Insulators

Making measurements of electron emission properties of insulators is difficult since insulators can charge either negatively or positively under charge particle bombardment. In addition, high incident energies or high fluences can result in modification of a material s conductivity, bulk and surface charge profile, structural makeup through bond breaking and defect creation, and emission properties. We discuss here some of the charging difficulties associated with making insulator-yield measurements and review the methods used in previous studies of electron emission from insulators. We present work undertaken by our group to make consistent and accurate measurements of the electron/ion yield properties for numerous thin-film and thick insulator materials using innovative instrumentation and techniques. We also summarize some of the necessary instrumentation developed for this purpose including fast response, low-noise, high-sensitivity ammeters; signal isolation and interface to standard computer data acquisition apparatus using opto-isolation, sample-and-hold, and boxcar integration techniques; computer control, automation and timing using Labview software; a multiple sample carousel; a pulsed, compact, low-energy, charge neutralization electron flood gun; and pulsed visible and UV light neutralization sources. This work is supported through funding from the NASA Space Environments and Effects Program and the NASA Graduate Research Fellowship Program.

Thomson, C. D.↗

Observation of surface states on gold films by electron tunneling spectroscopy

It is pointed out that inelastic electron tunneling spectroscopy (IETS) is a useful technique for the study of vibrational modes of molecules adsorbed on the surface of the insulating layer in a metal-insulator-metal tunnel junction. A detailed study of electron tunneling in aluminum-aluminum oxide-gold (Al-Al2O3-Au) tunnel junctions has been conducted with an overall goal of exploring possible mechanisms in such a thin film device useful for chemical sensing. For an understanding of the electronic effects in the presence of chemicals in a junction, the electronic surface properties of the metallic films in a clean tunnel junction must be established. The present investigation is concerned with room temperature observations of electronic states on the surface of highly oriented gold film in Al-Al2O3-Au junctions.

Lambe, J.↗