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At least 235 records · Page 13

Magnetic Switching in Monolayer 2D Diluted Magnetic Semiconductors via Spin‐to‐Spin Conversion

Abstract The integration of 2D van der Waals (vdW) magnets with topological insulators or heavy metals holds great potential for realizing next‐generation spintronic memory devices. However, achieving high‐efficiency spin–orbit torque (SOT) switching of monolayer vdW magnets at room temperature poses a significant challenge, particularly without an external magnetic field. Here, it is shown field‐free, deterministic, and nonvolatile SOT switching of perpendicular magnetization in the monolayer, diluted magnetic semiconductor (DMS), Fe‐doped MoS 2 (Fe:MoS 2 ) at up to 380 K with a current density of ≈7 × 10 4 A cm −2 . The in situ doping of Fe into monolayer MoS 2 via chemical vapor deposition and the geometry‐induced strain in the crystal break the rotational switching symmetry in Fe:MoS 2 , promoting field‐free SOT switching by generating out‐of‐plane spins via spin‐to‐spin conversion. An apparent anomalous Hall effect (AHE) loop shift at a zero in‐plane magnetic field verifies the existence of z spins in Fe:MoS 2 , inducing an antidamping‐like torque that facilitates field‐free SOT switching. This field‐free SOT application using a 2D ferromagnetic monolayer provides a new pathway for developing highly power‐efficient spintronic memory devices.

Chen, Siwei [Department of Mechanical Engineering ↗

Discovery of an Intrinsic Antiferromagnetic Semiconductor EuSc 2 Te 4 With Magnetism‐Driven Nonlinear Transport

Magnetic topological materials have recently emerged as a promising platform for studying quantum geometry by the nonlinear transport in thin film devices. In this work, an antiferromagnetic (AFM) semiconductor EuSc₂Te₄ as the first bulk crystal that exhibits quantum geometry-driven nonlinear transport is reported. This material crystallizes into an orthorhombic lattice with AFM order below 5.2 K and a bandgap of less than 50 meV. The calculated band structure aligns with the angle-resolved photoemission spectroscopy spectrum. The AFM order preserves combined space-time inversion symmetry but breaks both spatial inversion and time-reversal symmetry, leading to the nonlinear Hall effect (NLHE). Nonlinear Hall voltage measured in bulk crystals appears at zero field, peaks near the spin-flop transition as the field increases, and then diminishes as the spin moments align into a ferromagnetic order. This field dependence, along with the scaling analysis of the nonlinear Hall conductivity, suggests that the NLHE of EuSc₂Te₄ involves contributions from quantum metric, in addition to extrinsic contributions, such as spin scattering and junction effects. Furthermore, this NLHE is found to have the functionality of broadband frequency mixing, indicating its potential applications in electronics. This work reveals a new avenue for studying magnetism-induced nonlinear transport in magnetic materials.

36 MATERIALS SCIENCE↗

Fractional Skyrmion Tubes in Chiral‐Interfaced 3D Magnetic Nanowires

Magnetic skyrmions are chiral spin textures with rich physics and great potential for unconventional computing. Typically, skyrmions form in bulk crystals with reduced symmetry or ultrathin film multilayers involving heavy metals. Here, the formation of fractional Bloch skyrmion tubes at room temperature is demonstrated by 3D printing ferromagnetic double‐helix nanowires with two regions of opposite chirality. Using X‐ray microscopy and micromagnetic simulations, it is shown that the coexistence of vortex and anti‐parallel spin states induces the formation of fractional skyrmion tubes at zero magnetic fields, minimizing the energy cost of breaking the coupling between geometric and magnetic chirality. Control over zero‐field states is also demonstrated, including pure vortex, or mixed skyrmion‐vortex states, highlighting the magnetic reconfigurability of these 3D nanowires. This work shows how interfacing chiral geometries at the nanoscale can enable advanced forms of topological spintronics.

X-ray microscopy↗

Turn‐On of Current‐Induced Spin Torque Upon Non‐collinear Antiferromagnetic Ordering in Delafossite PdCrO 2

We report measurements of the current-induced spin torque produced by the delafossite antiferromagnet PdCrO 2 and acting on an adjacent ferromagnetic permalloy layer. The spin torque increases strongly as the temperature is reduced through the Néel temperature, when the PdCrO 2 transitions from a paramagnetic phase to a noncollinear antiferromagnetic state. This result is qualitatively consistent with density functional theory calculations regarding how spin-current generation changes upon antiferromagnetic ordering in PdCrO 2 .

36 MATERIALS SCIENCE↗

Spin Frustration and Unconventional Surface Spin Canting State in Van der Waals Ferromagnet/Antiferromagnet Heterostructures

Atomically flat surfaces of van der Waals (vdW) materials pave an avenue for addressing a long-standing fundamental issue of how a compensated antiferromagnet (AFM) surface frustrates a ferromagnetic (FM) overlayer in FM/AFM heterostructures. We investigate Fe5GeTe2/NiPS3 vdW heterostructures by characterizing AFM and FM spins separately. We find that in-plane zig-zag AFM NiPS3 develops three equivalent AFM domains, which are robust against external magnetic field and magnetic coupling with Fe5GeTe2. Moreover, evidence is provided of in-plane-AFM-induced perpendicular magnetic anisotropy (PMA) in adjacent Fe5GeTe2, and an unconventional out-of-plane surface spin canting state with the Fe5GeTe2 spins spatially turn from out-of-plane direction near the interface to in-plane direction away from the interface in Fe5GeTe2/NiPS3. The out-of-plane surface spin canting is a unique property of spin frustration in vdW magnetic heterostructures.

Wang, Tianye↗

Reconfigurable Magnetotransport in MnBi 2 Te 4 via Gate and Magnetic Field Tuning

The intrinsic magnetic topological insulator MnBi 2 Te 4 is a promising platform for exploring quantum phases with nontrivial band topology and for enabling electrical control over coupled magnetic and electronic phase transitions. In-plane magnetic fields, in particular, offer a distinct means of tuning these properties by strengthening quantized Hall effects, enhancing surface energy gaps, and driving spin reorientation transitions. However, a systematic understanding of how such fields affect magnetotransport is limited. Here, the magnetotransport behavior of few-layer MnBi 2 Te 4 as a function of gate voltage, temperature, and magnetic field angle, with a primary focus on in-plane field effects, are investigated. A gate-tunable crossover in magnetoresistance is observed from positive to negative values under in-plane magnetic fields as the gate voltage is swept below the charge neutrality point at temperatures below the Néel temperature. The in-plane field drives a transition from the antiferromagnetic ground state to a ferromagnetic configuration with spins aligned in-plane, while simultaneously altering the electronic structure, as revealed by gate-dependent transport features. The angle-dependent measurements reveal strongly gate-tunable magnetotransport anisotropy. These results establish in-plane magnetic fields as an effective tuning parameter for modulating spin and charge transport in MnBi 2 Te 4 , advancing prospects for reconfigurable spintronic and topological devices.

MnBi 2 Te 4↗

Observation of Topological Chirality Switching Induced Freezing of a Skyrmion Crystal

Magnetic skyrmions are topologically protected quasi-particles with a well-defined chirality. Control over their chirality is proposed as an additional feature for encoding data bits or as qubits in quantum computing due to their high efficiency and stability against achiral magnetic textures. Here it is shown that an in-plane magnetic field can be utilized to reshape the energy barriers between different skyrmionic bubbles (e.g., Bloch type, type-II) enabling spontaneous chirality fluctuations with a frequency that increases with the strength of the in-plane field. The insulating van der Waals ferromagnet CrBr3 is used as an archetypal system for low damping, reduced energy dissipation and a high number of magnetic phases to capture the chirality dynamics in real time through cryo-Lorentz transmission electron microscopy. It is observed that the interplay between the intrinsic Dzyaloshinskii–Moriya interaction and out-of-plane field biased the chirality dynamics, favoring one handedness over the other. A remarkable consequence of the spontaneous chirality switching mechanism is that it induces a freezing (or crystallization) process in the skyrmion lattice. As the bubbles fluctuate between Bloch and type-II they elongate and shrink parallel to the in-plane field. Subsequently, the overall lattice crystallizes along the in-plane field direction, inducing a phase transition from a disordered liquid state to a hexatic phase where skyrmions are highly ordered resembling that of a solid. The results indicate chirality as an active element in the creation of topologically protected skyrmion crystals unveiling pathways toward chiral spintronic device platforms with tunable embedded configuration.

2D Phase Transition↗

Uniaxial Strain Tuned Magnetism of the Altermagnet Candidate H-FeS

Altermagnets are a newly recognized class of magnetic materials characterized by compensated spin configurations while still breaking time-reversal symmetry and exhibiting unconventional transport phenomena. Hexagonal FeS (h-FeS) is a recently identified altermagnet candidate that shows a spontaneous anomalous Hall effect (AHE) accompanied by a tiny net magnetization. Here, we show that both the spontaneous AHE and magnetization can be effectively suppressed by an in-plane compressive strain. Since neutron diffraction measurements show that the applied uniaxial strain only modifies the in-plane domain population but does not affect the in-plane magnetic structure, the major effect of the applied strain is to tune the small 𝑐-axis ferromagnetic moment. Our results demonstrate a strong correlation between the tiny net magnetization and the spontaneous AHE in h-FeS, and show that uniaxial strain provides an effective knob to tune both properties in this altermagnet candidate for spintronic applications.

Yao, Weiliang [ORNL]↗

Structural and Electronic Complexities of a Sulfur‐Bridged Di‐Iron Complex Composed of Mono‐ and Di‐Nitrosyl Units

The delocalized, thermodynamically stable cation, [(N 2 S 2 )Fe(NO)•Fe(NO) 2 ] + , an adduct of mono-nitrosyl and dinitrosyl iron units, is analyzed to address the unusual stability of the sulfur-bridged diiron complex in its three overall redox levels, +, 0, and −. X-ray diffraction and myriad spectroscopic techniques probe products of sequential electron uptake in the corresponding neutral and anionic species. Conundrums include unified blueshifts of the overall 3-band, ν(NO), pattern with added electrons. One-electron reduction changes the anti-ferromagnetically coupled, S = 0, cationic diiron species to the neutral analog, S = ½, with unpaired spin mainly localized on the MNIU, which decreases its ∠Fe–N–O angle by 10 degrees in response to the extra electron density. Subsequent reduction to the anionic species, S = 1, involves a major geometric change at the MNIU, which moves the Fe in {Fe(NO)} 8 out of the N 2 S 2 plane. Site-specific 15 N labeling of nitrosyl in the MNIU confirms the IR analysis and shows rapid NO exchange between the MNIU/DNIU (mono-nitrosyl iron unit/dinitrosyl iron unit) pairs during its synthesis at RT. Mössbauer spectroscopy, S K-edge XAS, and molecular orbital calculations confirm the ability of NO and the versatility of sulfur bridges to buffer and distribute electrons, a key to their major importance in metalloenzymes.

DNIC↗

Terahertz‐Nanoscale Visualization of the Microscopic Spin‐Charge Architecture of Colossal Magnetoresistive Switching

Resolving sub-10 nm spin switching and the associated terahertz (THz) electrodynamics during the colossal magnetoresistance (CMR) transition is a definitive frontier in reaching the fundamental spatial, temporal, and energy-dissipation limits of spin-electronics. Yet, simultaneous control of high magnetic field, cryogenic environment, and nanometer resolution has remained an elusive benchmark for THz nanoscopy, leaving the local THz dynamics of these transitions largely unexplored. Here, we overcome these limitations by utilizing a custom-built cryogenic magneto-THz scattering-type scanning near-field optical microscopy (cm-THz-sSNOM) to resolve the near-field THz spectroscopic evolution of the magnetic field-driven CMR transition in a manganite single crystal. Our measurements provide a nanoscale visualization of the THz conductivity, capturing the moment that magnetic-field-induced spin switching triggers the transition from an antiferromagnetic insulator to a ferromagnetic metal. An ellipsoidal near-field model reveals a multi-scale transition initiated by 1–2 nm isolated spin-flip sites at low magnetic fields, which coalesce into ∼15 nm conducting regions as the threshold field is approached. These results provide an nano-THz view of CMR switching, establishing an analysis framework for mapping spin–charge–lattice–orbit–coupled dynamics at spatial scales that transcend the nominal sSNOM resolution.

Haeuser, Samuel [Iowa State University, Ames, IA (↗

Microstructural Underpinnings of Giant Intrinsic Exchange Bias in Epitaxial NiCo 2 O 4 Thin Films

Understanding intrinsic exchange bias in nominally single-component ferromagnetic or ferrimagnetic materials is crucial for simplifying related device architectures. However, the mechanisms behind this phenomenon and its tunability remain elusive, which hinders the efforts to achieve unidirectional magnetization for widespread applications. Inspired by the high tunability of ferrimagnetic inverse spinel NiCo 2 O 4 , the origin of intrinsic exchange bias in NiCo 2 O 4 (111) films deposited on Al 2 O 3 (0001) substrates are investigated. The comprehensive characterizations, including electron diffraction, X-ray reflectometry and spectroscopy, and polarized neutron reflectometry, reveal that intrinsic exchange bias in NiCo 2 O 4 (111)/Al 2 O 3 (0001) arises from a reconstructed antiferromagnetic rock-salt Ni x Co 1-x O layer at the interface between the film and the substrate due to a significant structural mismatch. Remarkably, by engineering the interfacial structure under optimal growth conditions, it can achieve exchange bias larger than coercivity, leading to unidirectional magnetization. Such giant intrinsic exchange bias can be utilized for realistic device applications. This work establishes a new material platform based on NiCo 2 O 4 , an emergent spintronics material, to study tunable interfacial magnetic and spintronic properties.

36 MATERIALS SCIENCE↗

Direct‐Write Printed Contacts to Layered and 2D Materials

Advancements in fabrication methods have shaped new computing device technologies. Among these methods, depositing electrical contacts to the channel material is fundamental to device characterization. Novel layered and 2D materials are promising for next-generation computing electronic channel materials. Direct-write printing of conductive inks is introduced as a surprisingly effective, significantly faster, and cleaner method to contact different classes of layered materials, including graphene (semi-metal), MoS 2 (semiconductor), Bi-2212 (superconductor), and Fe 5 GeTe 2 (metallic ferromagnet). Based on the electrical response, the quality of the printed contacts is comparable to what is achievable with resist-based lithography techniques. These devices are tested by sweeping gate voltage, temperature, and magnetic field to show that the materials remain pristine post-processing. This work demonstrates that direct-write printing is an agile method for prototyping and characterizing the electrical properties of novel layered materials.

2D materials↗

Giant Exfoliation Induced Magnetic Coercivity in Fe 3 GaTe 2

Permanent magnets with strong anisotropy and high coercivity underpin modern information and energy technologies, yet rare-earth-free alternatives remain limited. Here, we show that thickness engineering via mechanical exfoliation induces hard magnetic behavior in the van der Waals ferromagnet Fe 3 GaTe 2 . Bulk crystals exhibit Curie temperatures above 350 K but negligible room-temperature coercivity. When thinned below ∼100 nm, the coercive field is dramatically enhanced, reaching nearly 1 T at room temperature for in-plane fields—comparable to conventional hard magnets. Micromagnetic analysis reveals a crossover in magnetization reversal from domain-mediated processes in bulk samples to quasi-coherent rotation in thin flakes, driven by increased effective anisotropy and suppressed domain formation. This thickness-dependent transition enables tuning of magnetic hardness without chemical modification. Combined with high saturation magnetization and robust room-temperature performance, Fe 3 GaTe 2 emerges as a promising rare-earth-free material for spintronic applications. Its layered structure further allows integration into van der Waals heterostructures, where large in-plane coercivity can stabilize magnetic states against perturbations and interlayer coupling, offering potential for high-density nonvolatile memory and domain-wall-based devices.

36 MATERIALS SCIENCE↗

Giant Magnetostriction in Ferrimagnetic SmFe 5 As 3

Magnetostrictive materials are of interest not only from a fundamental perspective but also for their potential applications, spanning spintronics to energy harvesting. A new magnetostrictive material—SmFe 5 As 3 —reveals a complex interplay between magnetostriction, magnetic properties, and the crystal structure behavior. The ground state of SmFe 5 As 3 is ferrimagnetic, as evidenced by magnetic susceptibility data, band-structure calculations, and XANES measurements. At T m1 = 28 ± 4 K, part of the Fe sublattice reorients, transitioning into a ferromagnetic state. This is followed by an entrance into the paramagnetic state at T m2 = 76 ± 4 K. The effects observed in the magnetic measurements are accompanied by structural phase transitions. All three phases—below T m1 , between T m1 and T m2 , and above T m2 —are described by the same structural motif of the UCr 5 P 3 type (monoclinic space group P2 1 /m), differing only in the degree of deformation of the Fe–As framework. The new material exhibits giant magnetostriction of 2500 x 10 -6 . Dilatometry measurements on a SmFe 5 As 3 single crystal indicate strongly diverse behavior, exhibiting not only negative, but also zero, as well as positive thermo-elastic effects.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

A Nanosized {Ni II 18 } Cluster with a ‘Flying Saucer’ Topology Exhibiting Slow Relaxation of Magnetisation Phenomena at Both 15 K and 1.3 K

A high-nuclearity {Ni 18 } complex (1) with a unique ‘flying saucer’ motif has been prepared from the organic chelate, α-methyl-2-pyridine-methanol (mpmH), in conjunction with bridging azido (N 3 - ) and peroxido (O 2 2- ) ligands. Magnetic susceptibility measurements revealed the presence of both ferro- and antiferromagnetic exchange interactions between the metal centres in 1, and the stabilization of spin states with appreciable S values at two different temperature regimes. The end-on bridging azido and alkoxido groups are in all likelihood the ferromagnetic mediators, while the η 3 :η 3 :μ 6 -bridging peroxides most likely promote the antiparallel alignment of the metals’ spin vectors, yielding an overall non-zero spin ground state for the centrosymmetric compound 1. Furthermore, the {Ni 18 } nanosized cluster behaves as a single-molecule magnet, exhibiting magnetic hysteresis at low temperatures and two relaxation processes at 15 K and 1.3 K, a very rare phenomenon in polynuclear magnetic 3d-metal clusters.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Observation of Topological Spin Textures in Ferrimagnetic Mn 2 − x Zn x Sb

Ferrimagnets, which have both ferromagnetic and antiferromagnetic coupling, are attracting increased attention in the realm of spintronic devices due to advantages such as ultrafast dynamics and a suppressed skyrmion Hall effect. Thus, understanding the behavior of nontrivial spin textures in ferrimagnets is crucial; however, comprehensive reports on this topic remain limited. Here, the magnetic spin textures of ferrimagnetic Mn 2 − x Zn x Sb (x = 0.85) is explored as a function of temperature and applied magnetic field. The spin textures can be tuned to a variety of states, including stripes, skyrmion bags, and a skyrmion lattice. Chiral Néel-type magnetic structures are visualized using Lorentz transmission electron microscopy. Mn(I) ions are slightly shifted toward the Sb sites, which may be due to a strong electrostatic interaction between Mn and Sb ions. This local structural distortion breaks the inversion symmetry and introduces an effective Dzyaloshinkii–Moriya interaction. This work thus provides a pathway to use doping and heterogeneity in a ferrimagnet to control and generate chiral nontrivial spin textures.

Mn ion displacement↗

Bottom‐Up Synthesis of Metallic CoNi Nanoplatelets with Magnetic Vortex‐Like Spin Configurations

Magnetic nanoplatelets hold significant potential for various technical applications due to their ability to switch between a fully magnetized state with high magnetization and a vortex‐like configuration that eliminates stray fields in the absence of an external field. This study presents the synthesis of uniform CoNi nanoplatelets through the topotactic reduction of metal hydroxides using hydrogen plasma. The reduction process is analyzed via magnetometry, leveraging the transition from paramagnetic hydroxide to ferromagnetic metal. Lorentz transmission electron microscopy and scanning transmission X‐ray microscopy confirm the presence of magnetic vortex‐like structures in isolated Co 0.85 Ni 0.15 nanoplatelets at ambient temperature. Additionally, micromagnetic simulations are conducted to further explore the magnetic properties of the nanoplatelets, revealing the formation of magnetic vortex remanent states at diameters between 200 nm and 1 μm and a thickness of around 12 nm. Notably, structural defects and thickness variations do not directly destabilize the magnetic vortex configurations.

Kräenbring, Mena‐Alexander [Faculty of Physics and↗

Epitaxial Thin Film Growth on Recycled SrTiO 3 Substrates Toward Sustainable Processing of Complex Oxides

Complex oxide thin films cover a range of physical properties and multifunctionalities that are critical for logic, memory, and optical devices. Typically, the high‐quality epitaxial growth of these complex oxide thin films requires single crystalline oxide substrates such as SrTiO 3 (STO), MgO, LaAlO 3 , a‐Al 2 O 3, and many others. Recent successes in transferring these complex oxides as free‐standing films not only offer great opportunities in integrating complex oxides on other devices, but also present enormous opportunities in recycling the deposited substrates after transfer for cost‐effective and sustainable processing of complex oxide thin films. In this work, the surface modification effects introduced on the recycled STO are investigated, and their impacts on the microstructure and properties of subsequently grown epitaxial oxide thin films are assessed and compared with those grown on the pristine substrates. Detailed analyses using high‐resolution scanning transmission electron microscopy and geometric phase analysis demonstrate distinct strain states on the surfaces of the recycled STO versus the pristine substrates, suggesting a pre‐strain state in the recycled STO substrates due to the previous deposition layer. These findings offer opportunities in growing highly mismatched oxide films on the recycled STO substrates with enhanced physical properties. Specifically, yttrium iron garnet (Y 3 Fe 5 O 12 ) films grown on recycled STO present different ferromagnetic responses compared to that on the pristine substrates, underscoring the effects of surface modification. The study demonstrates the feasibility of reuse and redeposition using recycled substrates. Via careful handling and preparation, high‐quality epitaxial thin films can be grown on recycled substrates with comparable or even better structural and physical properties toward sustainable process of complex oxide devices.

pre-strained STO surfaces↗