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219 records · Page 13

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NASA NTRS1991

Lightning induced currents in aircraft wiring using low level injection techniques

Various techniques were studied to predict the transient current induced into aircraft wiring bundles as a result of an aircraft lightning strike. A series of aircraft measurements were carried out together with a theoretical analysis using computer modeling. These tests were applied to various aircraft and also to specially constructed cylinders installed within coaxial return conductor systems. Low level swept frequency CW (carrier waves), low level transient and high level transient injection tests were applied to the aircraft and cylinders. Measurements were made to determine the transfer function between the aircraft drive current and the resulting skin currents and currents induced on the internal wiring. The full threat lightning induced transient currents were extrapolated from the low level data using Fourier transform techniques. The aircraft and cylinders used were constructed from both metallic and CFC (carbon fiber composite) materials. The results show the pulse stretching phenomenon which occurs for CFC materials due to the diffusion of the lightning current through carbon fiber materials. Transmission Line Matrix modeling techniques were used to compare theoretical and measured currents.

Stevens, E. G.↗

NASA NTRS2004

Tethers as Debris: Simulating Impacts of Kevlar Tethers on Shuttle Tiles

In a previous paper I examined the effects of impacts of polymer tethers on aluminum plates using the SPHC hydrodynamic code. In this paper I apply tether models to a new target - models of Space Shuttle tiles developed during the STS 107 accident investigation. In this three-dimensional simulation, a short tether fragment strikes a single tile supported on an aluminum backing plate. A tile of the LI-900 material is modeled. Penetration and damage to the tile and the backwall are characterized for three normal impact velocities. The tether is modeled as a bundle of eight 1-mm strands, with the bundle having dimensions 2-mm x 4-mm x 20-cm. The bulk material properties used are those of Kevlar(TradeMark) 49, for which a Mie-Gruneisen multiphase equation of state (eos) is used. In addition, the strength model is applied in a linear sense, such that tensile loads along the strand length are supported, but there is no strength in the lateral directions. Tile models include the various layers making up the tile structure. The outermost layer is a relatively dense borosilicate glass, known as RCG, 0.5-mm thick. The RCG layer is present on the top and four sides of the tile. Below this coating is the bulk of the tile, 1.8- in thick, made of LI-900, a product consisting of rigidized fiberous silica with a density of 9 lWft3. Below the main insulating layer is a bottom layer of the same material that has been treated to increase its density by approximately 69% to improve its strength. This densified layer is bonded to a Strain Isolation Pad (SIP), modeled as a refractory felt fabric. The SIP is bonded to an aluminum 2024 wall 0.1-in thick. The tile and backwall materials use a Me-Gruneisen multiphase eos, with the exception of the SIP felt, which uses a fabric equation of state. Fabrics must be crushed to the full bulk material density before bulk material properties and a Mie-Gruneisen eos are applied. Tether fragment impact speeds of 3,7, and 10 km/s are simulated, with impact velocities normal to the tile face. Damage results are presented in tabular format.

Evans, Steven W.↗

NASA NTRS2014

Structural Characterization of Lateral-grown 6H-SiC am-plane Seed Crystals by Hot Wall CVD Epitaxy

The performance of commercially available silicon carbide (SiC) power devices is limited due to inherently high density of screw dislocations (SD), which are necessary for maintaining polytype during boule growth and commercially viable growth rates. The NASA Glenn Research Center (GRC) has recently proposed a new bulk growth process based on axial fiber growth (parallel to the c-axis) followed by lateral expansion (perpendicular to the c-axis) for producing multi-faceted m-plane SiC boules that can potentially produce wafers with as few as one SD per wafer. In order to implement this novel growth technique, the lateral homoepitaxial growth expansion of a SiC fiber without introducing a significant number of additional defects is critical. Lateral expansion is being investigated by hot wall chemical vapor deposition (HWCVD) growth of 6H-SiC am-plane seed crystals (0.8mm x 0.5mm x 15mm) designed to replicate axially grown SiC single crystal fibers. The post-growth crystals exhibit hexagonal morphology with approximately 1500 m (1.5 mm) of total lateral expansion. Preliminary analysis by synchrotron white beam x-ray topography (SWBXT) confirms that the growth was homoepitaxial, matching the polytype of the respective underlying region of the seed crystal. Axial and transverse sections from the as grown crystal samples were characterized in detail by a combination of SWBXT, transmission electron microscopy (TEM) and Raman spectroscopy to map defect types and distribution. X-ray diffraction analysis indicates the seed crystal contained stacking disorders and this appears to have been reproduced in the lateral growth sections. Analysis of the relative intensity for folded transverse acoustic (FTA) and optical (FTO) modes on the Raman spectra indicate the existence of stacking faults. Further, the density of stacking faults is higher in the seed than in the grown crystal. Bundles of dislocations are observed propagating from the seed in m-axis lateral directions. Contrast extinction analysis of these dislocation lines reveals they are edge type basal plane dislocations that track the growth direction. Polytype phase transition and stacking faults were observed by high-resolution TEM (HRTEM), in agreement with SWBXT and Raman scattering.

Single Crystal↗