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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 235 records · Page 13
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Growth and characterization of large (Y,La)TiO 3 and (Y,Ca)TiO 3 single crystals

The Mott-insulating rare-earth titanates ( R TiO 3 , with R being a rare-earth ion) are an important class of materials that encompasses interesting spin-orbital phases as well as ferromagnet-antiferromagnet and insulator-metal transitions. The growth of these materials has been plagued by difficulties related to overoxidation, which arises from a strong tendency of Ti 3 + to oxidize to Ti 4 + . We describe our efforts to grow sizable single crystals of YTiO 3 , Y 1 - x La x TiO 3 ( x ≤ 0.25 ), and Y 1 - y Ca y TiO 3 ( y ≤ 0.35 ) with the optical traveling-solvent floating-zone technique. Finally, we present sample characterization via chemical composition analysis, magnetometry, charge transport, neutron scattering, x-ray absorption spectroscopy, and x-ray magnetic circular dichroism to understand macroscopic physical property variations associated with overoxidation. Furthermore, we demonstrate a good signal-to-noise ratio in inelastic magnetic neutron scattering measurements of spin-wave excitations. A superconducting impurity phase, found to appear in Ca-doped samples at high doping levels, is identified as TiO.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Quantum paramagnetism in a non-Kramers rare-earth oxide: Monoclinic Pr 2 Ti 2 O 7

Little is so far known about the magnetism of the A 2 B 2 O 7 monoclinic layered perovskites that replace the spin-ice supporting pyrochlore structure for r A /r B > 1.78. We show that high quality monoclinic Pr 2 Ti 2 O 7 single crystals with a three-dimensional network of non-Kramers Pr 3+ ions that interact through edge-sharing superexchange interactions, form a singlet ground-state quantum paramagnet that does not undergo any magnetic phase transitions down to, at least, 1.8 K. The chemical phase stability, structure, and magnetic properties of the layered perovskite Pr 2 Ti 2 O 7 were investigated using x-ray diffraction, transmission electron microscopy, and magnetization measurements. Synthesis of polycrystalline samples with the nominal compositions of Pr 2 Ti 2+x O 7 (–0.16 ≤ x ≤ 0.16 ) showed that deviations from the Pr 2 Ti 2 O 7 stoichiometry lead to secondary phases of related structures including the perovskite phase Pr 2/3 TiO 3 and the orthorhombic phases Pr 4 Ti 9 O 24 and Pr 2 TiO 5 . No indications of site disordering (stuffing and antistuffing) or vacancy defects were observed in the Pr 2 Ti 2 O 7 majority phase. A procedure for growth of high-structural-quality stoichiometric single crystals of Pr 2 Ti 2 O 7 by the traveling solvent floating zone method is reported. Thermomagnetic measurements of single-crystalline Pr 2 Ti 2 O 7 reveal an isolated singlet ground state that we associate with the low-symmetry crystal electric-field environments that split the (2J + 1 = 9)-fold degenerate spin-orbital multiplets of the four differently coordinated Pr 3+ ions into 36 isolated singlets resulting in an anisotropic temperature-independent van Vleck susceptibility at low T. Here, a small isotropic Curie term is associated with 0.96(2)% noninteracting Pr 4+ impurities.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Magnetic properties of the quasi-XY Shastry-Sutherland magnet ER 2 Be 2 SiO 7

Polycrystalline and single-crystal samples of the insulating Shastry-Sutherland compound Er 2 ⁢Be 2 ⁢SiO 7 were synthesized via a solid-state reaction and the floating zone method, respectively. The crystal structure, Er single-ion anisotropy, zero-field magnetic ground state, and magnetic phase diagrams along high-symmetry crystallographic directions were investigated with bulk measurement techniques, x-ray and neutron diffraction, and neutron spectroscopy. Here, we establish that Er 2 ⁢Be 2 ⁢SiO 7 crystallizes in a tetragonal space group with planes of orthogonal Er dimers and a strong preference for the Er moments to lie in the local plane perpendicular to each dimer bond. We also find that this system has a noncollinear ordered ground state in zero field with a transition temperature of 0.841 K consisting of antiferromagnetic dimers and in-plane moments. Finally, we mapped out the H-T phase diagrams for Er 2 ⁢Be 2 ⁢SiO 7 along the directions H ∥ [001], [100], and [110]. While an increasing in-plane field simply induces a phase transition to a field-polarized phase, we identify three metamagnetic transitions in the H ∥ [001] case. Single-crystal neutron diffraction results reveal that the H ∥ [001] phase diagram can be explained predominantly by the expected field-induced behavior of classical, anisotropic moments, although the microscopic origin of one phase requires further investigation.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Synthesis and characterization of the novel breathing pyrochlore compound Ba 3 ⁢Tm 2⁢ Zn 5⁢ O 11

In this study, a novel material from the rare-earth based breathing pyrochlore family, Ba 3 ⁢Tm 2 ⁢Zn 5 ⁢O 11 , was successfully synthesized. Powder x-ray diffraction and high-resolution powder neutron diffraction confirmed phase purity and the $F\bar4$3⁢𝑚 breathing pyrochlore crystal structure, while thermogravimetric analysis revealed incongruent melting behavior compared to its counterpart, Ba 3 ⁢Yb 2⁢ Zn 5⁢ O 11 . High-quality single crystals of Ba 3 ⁢Tm 2 ⁢Zn 5 ⁢O 11 were grown using the traveling solvent floating zone technique and assessed using Laue x-ray diffraction and single crystal x-ray diffraction. Further, thermodynamic characterization indicated paramagnetic behavior down to 0.05 K, and inelastic neutron scattering measurements identified distinct dispersionless crystal electric field energy bands, with the fitted crystal electric field model predicting a single-ion singlet ground state and an energy gap of ∼9 meV separating it from the first excited (singlet) state. Additional low-energy excitation studies on single crystals revealed dispersionless bands at 0.8 and 1 meV. Computed phonon dispersions from first-principles calculations ruled out phonons as the origin of these modes, further illustrating the puzzling and unique properties of Ba 3 ⁢Tm⁢ 2 Zn 5 ⁢O 11 .

36 MATERIALS SCIENCE↗
DOE OSTI2017

Fabrication and Modeling of High-Efficiency Front Junction N-Type Silicon Solar Cells With Tunnel Oxide Passivating Back Contact

This paper reports on in-depth understanding, modeling, and fabrication of 23.8% efficient 4 cm 2 n-type Float Zone (FZ) silicon cells with a selective boron emitter and photolithography contact on front and tunnel oxide passivating contact on the back. Tunnel oxide passivating contact composed of a very thin chemically grown silicon oxide (~15 Å) capped with plasma-enhanced chemical vapor deposition (PECVD) grown 20 nm n + poly Si gave excellent surface passivation and carrier selectivity with very low saturation current density (~5 fA/cm 2 ). A high-quality boron selective emitter was formed using ion implantation and solid source diffusion to minimize metal recombination and emitter saturation current density. Process optimization resulted in a cell V oc of 712 mV, J sc of 41.2 mA/cm 2 , and FF of 0.811. Here, a simple methodology is used to model these cells which replaces tunnel oxide passivating contact region by electron and hole recombination velocities extracted from measured saturation current density of tunnel oxide passivating contact region and analysis. Using this approach and two-dimensional device modeling gave an excellent match between the measured and simulated cell parameters and efficiency, supporting excellent passivation and carrier selectivity of these contacts. Extended simulations showed that 26% cell efficiency can be achieved with this cell structure by further optimization of wafer quality, emitter profile, and contact design

14 SOLAR ENERGY↗
DOE OSTI2017

Superacid-Treated Silicon Surfaces: Extending the Limit of Carrier Lifetime for Photovoltaic Applications

Minimizing carrier recombination at interfaces is of extreme importance in the development of high-efficiency photovoltaic devices and for bulk material characterization. Here, we investigate a temporary room temperature superacid-based passivation scheme, which provides surface recombination velocities below 1 cm/s, thus placing our passivation scheme amongst state-of-the-art dielectric films. Application of the technique to high-quality float-zone silicon allows the currently accepted intrinsic carrier lifetime limit to be reached and calls its current parameterization into doubt for 1 Ω·cm n-type wafers. The passivation also enables lifetimes up to 65 ms to be measured in high-resistivity Czochralski silicon, which, to our knowledge, is the highest ever measured in Czochralski-grown material. The passivation strategies developed in this work will help diagnose bulk lifetime degradation under solar cell processing conditions and also help quantify the electronic quality of new passivation schemes.

42 ENGINEERING↗
DOE OSTI2017

Study of the specific features of single-crystal boron microstructure

A complex study of the structure of β-boron single crystal grown by the floating-zone method, with sizes significantly exceeding the analogs known in the literature, has been performed. The study includes X-ray diffraction analysis and X-ray diffractometry (measurement of pole figures and rocking curves), performed on both laboratory and synchrotron sources; atomic-resolution scanning transmission electron microscopy with spherical aberration correction; and energy-dispersive microanalysis. X-ray diffraction analysis using synchrotron radiation has been used to refine the β-boron structure and find impurity Si atoms. The relative variations in the unit-cell parameters a and c for the crystal bulk are found to be δa/a ≈ 0.4 and δc/c ≈ 0.1%. X-ray diffractometry has revealed that the single-crystal growth axis coincides with the [22̄013] crystallographic axis and makes an angle of 21.12° with the [0001] threefold axis. Electron microscopy data have confirmed that the sample under study is a β-boron crystal, which may contain 0.3–0.4 at % Si as an impurity. Planar defects (stacking faults and dislocations) are found. The results of additional measurements of the temperature dependence of the thermal conductivity of the crystal in the range of 50–300 K are indicative of its high structural quality.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Structural Analysis of Sr{sub 3}NbFe{sub 3}Si{sub 2}O{sub 14} Single Crystal from the Langasite Family and Finding of Negative Thermal Expansion in the Range of 83–110 K

Iron-containing Sr{sub 3}NbFe{sub 3}Si{sub 2}O{sub 14} single crystals from the langasite family, which are interesting for researchers due to their magnetic ordering at T{sub N} = 26 K, have been grown by the floating zone melting method. Accurate X-ray diffraction analysis is performed at 293 and 90.5 K using the data collected on a CCD diffractometer. To compensate for systematic errors, two data sets are collected at each temperature. The structure is refined based on averaged data set: sp. gr. P321, Z = 1, sin θ/λ ≤ 1.35 Å{sup –1}; a = 8.2609(4) Å, c = 5.1313(3) Å at 293 K and a = 8.2344(6) Å, c = 5.1243(6) Å at 90.5 K; the agreement factors are R/wR = 1.18/1.03% and Δρ{sub min}/Δρ{sub max} =–0.57/0.25 e/Å3 for 3583 independent reflections at 293 K and R/wR = 1.18/1.13% and Δρ{sub min}/Δρ{sub max} =–0.54/0.23 e/Å3 for 3638 reflections at 90.5 K. Negative thermal expansion in the direction of the cell c axis is revealed in the range of 83–110 K.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2017

Structure of bismuth films obtained using an array of identically oriented single-crystal bismuth islands preliminarily grown on a substrate

An array of identically oriented single-crystal bismuth islands formed on mica plates is used as a substrate to improve the structure of bismuth thin films grown by vacuum thermal evaporation. The array of islands is formed by the chemical etching of a single-crystal bismuth film 1 μm thick grown by floating-zone recrystallization under a coating. The structure of the obtained films is studied by X-ray diffraction, atomicforce microscopy, and electron backscatter diffraction scanning electron microscopy.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Luminescence Properties of FZ Silicon Irradiated with Swift Heavy Ions

The optical properties of float-zone (FZ) silicon irradiated with swift heavy ions (SHI) are studied. In the low-temperature photoluminescence spectra, a broad peak in the range 1.3–1.5 μm is evident along with the well-known X, W, W', R, and C lines. In this case, it is found that, as the irradiation dose is increased in the range 3 × 10{sup 11}–10{sup 13} cm{sup –2}, the photoluminescence peak falls and narrows and, at the same time, its maximum shifts to longer wavelengths.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

AlInPSbAs/InAs Heterostructures for Thermophotoelectric Converters

Using the method of floating-zone recrystallization with a temperature gradient, AlInPSbAs/InAs heterostructures for thermophotoelectric converters operating in the wavelength range of 500–3200 nm are obtained. The use of the AlInPSbAs quinary solid solutions as an active region thermophotoconverters allows one to increase the external quantum yield up to 0.9 in the spectral range of 520–2800 nm.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Development of thinned silicon sensors on 8” wafers (CRADA FRA-2015-0015 Final Report)

Sensors fabricated from high resistivity, float zone, silicon material have been the basis of vertex detectors and trackers for the last 30 years. The areas of these devices have increased from a few square cm to >200 m 2 for the existing CMS tracker. CMS and ATLAS upgrades will each require more than 200 m 2 of silicon and the CMS High Granularity Calorimeter (HGC) will require more than 600 m 2 . Cost and complexity of assembly of these devices is related to the area of each module, which in turn is set by the area of the silicon sensors. A move from 4” and 6” wafers (the only sizes currently available) to 8” diameter in volume production has the potential for savings of tens of millions of dollars in the detector upgrade programs at the Large Hadron Collider (LHC) and future experiments. In addition to large area, the devices must be radiation hard, which can be achieved by the use of sensors thinned to 200 microns or less. The combination of wafer thinning and large wafer diameter is a significant technical challenge, and is the subject of this work.

43 PARTICLE ACCELERATORS↗
DOE OSTI2020

Impact of undoped substrates on high performance silicon solar cells

Today's highest-efficiency silicon solar cells typically operate near the threshold between low-level and high-level injection. It is not well understood if pushing further into a regime in which the cell operating point is solidly in high-level injection at all times of the day has further benefits for the solar cell performance. From a reliability perspective, cells fabricated on lower doped silicon have a larger breakdown voltage. This advantage can affect the design of modules allowing higher voltages and a relaxation of the number of bypass diodes needed. In this project, we present a comprehensive assessment, both experimental and using simulation, of how bulk resistivity, light intensity, and operation temperature impact the performance of the silicon solar cell. This work incorporates a comprehensive device physics analysis assisted by numerical simulation. The source code is now available under General Public License (GPL3), and to further leverage the findings of this project and outreach people outside of the scientific community, we are working with www.pveducation.org (which receives >1 million visitors a year) to create interactive content using our simulation results. The simulation results indicate that high bulk resistivity wafers (>>10 Ωcm) require bulk Shockley-Read-Hall (SRH) lifetimes in the millisecond range to outperform wafers with standard bulk resistivities (<10 Ωcm). Additionally, above bulk resistivities of 10 Ωcm (the exact value depends on the bulk characteristics of the wafer), the cell efficiency is weakly dependent on the bulk resistivity. As a result, ingot manufactures may have an opportunity to further reduce wafer cost by growing higher resistivity ingots that are more tolerant to resistivity variations. This project is particularly relevant today, as solar cell architectures with improved surface passivation and milliseconds lifetimes wafers are commercially available, leveraging potential benefits of using higher bulk resistivities. Outside of interdigitated back contact (IBC) cell, reported studies on high resistivity silicon (>100 Ωcm) are very limited. To the best of our knowledge, this project provides for the first-time experimental insight on solar cells fabricated on wafers with bulk resistivities up to several thousand Ωcm, delivering a comprehensive vision of their performance under real-world temperature and light intensity operation conditions. We manufactured and characterized solar cells with bulk resistivities in the range of 1 Ωcm to >15k Ωcm. Under standard testing conditions (STC), we measured solar cells efficiencies over 20% over the entire range of bulk resistivities, using our baseline cell processing. To evaluate the cell performance in real-world operation conditions, the solar cells were measured at different temperatures (25-80°C) and at different light intensities (0.1-1 suns). The measurements show that the bulk resistivity does not impact the solar cell response to temperature and light intensity. Similar thermal coefficients (TC) were measured for standard and high bulk resistivities, and they are comparable with the TC values reported in the literature for standard bulk resistivities <10 Ωcm. After light soaking, the solar cell didn’t show signs of light-induced degradation (LID). This result was expected since n-type float zone (FZ) wafers were used in this work, i.e. low traces of boron and low concentration of oxygen (oxygen is typically found in the seed end of Czochralski (CZ) ingots). We measured for high bulk resistivities (>10 Ωcm) extremely high breakdown voltages (>1000V). In conclusion, the insight provided by this project can positively impact the levelized cost of energy (LCOE) of the photovoltaic systems through its effect on cell and ingot manufacturing yield, silicon cell power output, and module reliability.

14 SOLAR ENERGY↗
DOE OSTI2023

Antiferromagnetism and Superconductivity

This work under the rubrique of Antiferromagnetism and Superconductivity covers significant aspects of the most important and highest quality of superconductors in the class of quantum materials and the influence of magnetism on the superconducting state. These compounds include high temperature superconductors, pnictide iron-based superconductors, and topological superconductors. Special note is given that crystal growth of uranium based superconductors was performed with equipment created at Northwestern University for this purpose using novel ultra-high vacuum, electron-beam, float zone refining and crystal growth, producing the best quality of bulk single crystals of UPt3 in the literature with RRR=1546.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Understanding the Mechanism of Light and Elevated Temperature Induced Degradation of p-type Silicon Solar Cells (Final Report)

Light- and elevated-temperature-induced degradation (LeTID) was first discovered in multicrystalline Si (mc-Si) solar cells and was initially attributed to metal impurities. Later, LeTID was reported in Czochralski (Cz) and float-zone (FZ) Si, and is considered as an important efficiency loss mechanism in p-type passivated emitter rear contact (p-PERC) Cz Si solar cells. LeTID causes ~10% relative and permeant efficiency losses in these cells in warmer climate regions where the module temperature is > 50 °C. Unlike light-induced degradation (LID), which is also observed in p-PERC cells, LeTID is slower and takes weeks to months in the field to saturate. Another difference compared to LID is that regeneration in LeTID proceeds very slowly, and field regeneration could take > 25 years — essentially the life of the module. Unlike B-O defects that are responsible for LID, neither B nor O impurities are directly involved in LeTID. LeTID appears to be unique to p-type Si, and is also observed in Ga-doped Si. Currently, most experimental evidence relates LeTID to the injection of hydrogen present in the dielectric surface passivation layers, such as SiN x and Al 2 O 3 , into the monocrystalline Si (c-Si) bulk during the fast-firing step. The involvement of hydrogen is further strengthened by controlled studies that show that increasing the amount of hydrogen in the dielectric during fast-firing increases the degree of LeTID. Similar to LID, a regeneration process has been discovered for LeTID. Regeneration of LeTID defects occurs when samples are exposed to 2–4 Suns illumination at elevated temperatures of 140–220 °C for 2–15 hr. Given the slower kinetics of LeTID and sample regeneration compared to LID, this poses a challenge for the manufacturing and field reliability of p-PERC cells, which will be the leading photovoltaic technologies over the next decade. Therefore, there is a need to understand LeTID and develop strategies to mitigate this effect. The defect responsible for LeTID has been extensively studied with over 100 publications, but direct spectroscopic evidence of this defect’s structure is lacking. Without an atomistic understanding of the LeTID defect, it is difficult to assess the long-term efficacy of the current industrial mitigation strategies. This, in turn, has implications on energy production for tens of gigawatts of these cells that will be deployed yearly worldwide. Using electron paramagnetic resonance, we identified a defect associated with LeTID with a g-value of 2.006, which we attribute to an Si dangling bond in an extended defect such as a vacancy agglomerate with H possibly within or in close vicinity. These vacancy agglomerates are likely created during the firing process, during which time H atoms are also injected into the bulk from the hydrogenated SiN x dielectric layer. Our atomistic-level insight shows that the LeTID defect can be mitigated by targeted intrinsic defect engineering of the c-Si material through a slower pull rate of the Cz ingot or 1000 °C oxygen ambient processing of the Si wafer to reduce the vacancy concentration. This project was a collaborative effort between the Colorado School of Mines and the National Renewable Energy Laboratory.

14 SOLAR ENERGY↗
DOE OSTI2020

Oxygen Inhomogeneity and Reversibility in Single Crystal LaNiO{sub 3-{delta}}.

LaNiO 3&minus; &delta; single crystals have been obtained via high pressure floating zone growth under 149 bar of oxygen pressure. We find a radial gradient in the magnetic properties of specimens extracted from the as-grown boule, which we correlate with the appearance of ordered oxygen vacancy structures. This radial oxygen inhomogeneity has been characterized systematically using a combination of magnetization and X-ray scattering measurements. We establish the presence of rhombohedral ( R 3 &macr; c ), oxygen stoichiometric specimens at the periphery of the boule and the presence of a dilute concentration of ordered oxygen-deficient orthorhombic La 2 Ni 2 O 5 in the center. Furthermore, we demonstrate that the as-grown, oxygen-deficient central regions of the crystal can be annealed under high oxygen pressure, without loss of crystallinity, into fully oxygenated LaNiO 3 , recovering magnetic properties that are characteristic of stoichiometric specimens from the exterior region of the crystal. Thus, single crystals of LaNiO 3&minus; &delta; possess oxygen content that can be reversibly modified under oxidizing and reducing conditions.

crystal growth↗
DOE OSTI2019

Quality control of silicon pixel wafers for the CMS Phase-1 pixel upgrade

The CMS detector at the CERN Large Hadron Collider features as its innermost component a silicon pixel detector. The original pixel detector was completely replaced during the 2016-2017 winter technical stop. One of the goals of this Phase-1 Upgrade of the pixel detector was to replace the sensors in the original CMS forward pixel detector with new, unirradiated sensors. The new CMS forward pixel detector must survive an integrated luminosity of 300 fb$^{-1}$ before being replaced again prior to the High-Luminosity LHC era. Just as in the original construction, the Phase-1 forward pixel sensors were made of n$^{+}$-in-n Diffusion Oxygenated Float Zone silicon. This note documents the quality spot-checking of the new sensors, comparing our results with those provided by the vendor. In general there was good agreement between the results.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗