Development of Welded Fiber-optic Faceplate Assemblies for Portable High-flux API D-T Neutron Generators
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Stringent physical requirements need to be met for the high-performing surface-electrode ion traps used in quantum computing and timekeeping. In particular, these traps must survive a high-temperature environment for vacuum chamber preparation and support high RF voltage on closely spaced electrodes. Due to the use of gold wire bonds on aluminum pads, intermetallic growth can lead to wire bond failure via breakage or high resistance, limiting the lifetime of a trap assembly to a single multiday bake at 200 ° C. Using traditional thick metal stacks to prevent intermetallic growth, however, can result in trap failure due to RF breakdown events. Through high-temperature experiments, we conclude that an ideal metal stack for ion traps is Ti/Pt/Au (20/100/250 nm), which allows for a cumulative bakeable time of roughly 86 days without compromising the trap voltage performance. This increase in the bakeable lifetime of ion traps will remove the need to discard otherwise functional ion traps when vacuum hardware is upgraded, which will greatly benefit ion trap experiments.
A direct current (dc) high voltage photo-emission electron gun operating at 130 kV is utilized at the Jefferson Lab (JLab) Continuous Electron Beam Accelerator Facility to generate spin-polarized electrons for nuclear physics experiments. Over the past decade, JLab has tested and implemented inverted-geometry ceramic insulators in photoguns, connecting the cathode electrode in vacuum to the high voltage power supply using commercial high voltage cables. This contribution reports on tests performed up to 375 kV dc, implementation of inverted insulators in a 300 kV dc photogun generating magnetized electron beams, and describes plans to develop a reliable insulator-cable connector for applying 500 kV dc to a future polarized beam photogun operating reliably and without field emission at 350 kV.
The III-nitride semiconductors have many attractive properties for field-emission vacuum electronics, including high thermal and chemical stability, low electron affinity, and high breakdown fields. In this work, we report top-down fabricated gallium nitride (GaN)-based nanoscale vacuum electron diodes operable in air, with record ultralow turn-on voltages down to ~0.24 V and stable high field-emission currents, tested up to several microamps for single-emitter devices. We leverage a scalable, top-down GaN nanofabrication method leading to damage-free and smooth surfaces. Gap-dependent and pressure-dependent studies provide new insights into the design of future, integrated nanogap vacuum electron devices. The results show promise for a new class of high-performance and robust, on-chip, III-nitride-based vacuum nanoelectronics operable in air or reduced vacuum.
New developments in pressure- and thermally driven membrane desalination technologies offer the potential to cost-effectively treat high-salinity waters, especially when powered by low-cost solar electricity and thermal energy. This paper presents a comparative techno-economic assessment of the state-of-the-art most promising pressure- and thermally driven membrane technologies for high recovery desalination, namely, osmotically-assisted reverse osmosis (OARO) and batch-operated vacuum-air-gap membrane distillation (batch V-AGMD), to produce potable water while concentrating brine within the range of 140–290 g/L TDS for minimum-liquid-discharge (MLD) and zero-liquid-discharge (ZLD) applications. It is shown that both OARO and batch V-AGMD can treat feedwater and brines with TDS in the range of 30–125 g/L with corresponding fresh water recovery rates of 85–25%. When low cost solar electricity and thermal energy are used, the resulting levelized cost of water (LCOW) from OARO is in the range of 0.70–6.28 $/m 3 , and that from batch-V-AGMD is in the range of 1.74–2.77 $/m 3 . OARO is more cost-effective than batch V-AGMD when feedwater salinity is below 70 g/L and recovery below 75%, whereas batch V-AGMD is more cost-effective at higher recovery rates and salinity levels. Finally, the sensitivity of this comparison on energy prices and module costs is discussed.
Abstract not provided.
The decoration of two-dimensional (2D) substrates with nanoparticles (NPs) serve as heterostructures for various catalysis applications. Deep understanding of catalyst degradation mechanisms during service conditions is crucial to improve the catalyst durability. In this work, we studied the sintering behavior of Pt and bimetallic Au-core Pt-shell (Au@Pt core–shell) NPs on MoS 2 supports at high temperatures under vacuum, nitrogen (N 2 ), hydrogen (H 2 ), and air environments by in situ gas-cell transmission electron microscopy (TEM). The key observations are summarized as effect of environment: while particle migration and coalescence (PMC) was the main mechanism that led to Pt and Au@Pt NPs degradation under vacuum, N 2 , and H 2 environments, the degradation of MoS 2 substrate was prominent under exposure to air at high temperatures. Pt NPs were less stable in H 2 environment when compared with the Pt NPs under vacuum or N 2 , due to Pt–H interactions that weakened the adhesion of Pt on MoS 2 . Effect of NP composition: under H 2 , the stability of Au@Pt NPs was higher in comparison to Pt NPs. This is because H 2 promotes the alloying of Pt–Au, thus reducing the number of Pt at the surface (reducing H 2 interactions) and increasing Pt atoms in contact with MoS 2 . Effect of NP size: The alloying effect promoted by H 2 was more pronounced in small size Au@Pt NPs resulting in their higher sintering resistance in comparison to large size Au@Pt NPs and similar size Pt NPs. The present work provides key insights into the parameters affecting the catalyst degradation mechanisms on 2D supports.
When a femtosecond duration and hundreds of kiloampere peak current electron beam traverses the vacuum and high-density plasma interface, a new process, that we call here relativistic transition radiation (RTR), generates an intense ~ 100 as pulse containing ~ 1 terawatt power of coherent vacuum ultraviolet (VUV) radiation accompanied by several smaller femtosecond duration satellite pulses. This pulse inherits the radial polarization of the incident beam field and has a ring intensity distribution. This RTR is emitted when the beam density is comparable to the plasma density and the spot size much larger than the plasma skin depth. Physically, it arises from the return current or backward relativistic motion of electrons starting just inside the plasma that Doppler up shifts the emitted photons. The number of RTR pulses is determined by the number of groups of plasma electrons that originate at different depths within the first plasma wake period and emit coherently before phase mixing.
As part of radioisotope thermoelectric generator (RTG) production for power sources in deep space exploration, Oak Ridge National Laboratory (ORNL) produces plutonium-238 ( 238 Pu). To produce 238 Pu, neptunium-237 ( 237 Np) targets are fabricated at ORNL and subsequently irradiated at the High Flux Isotope Reactor (HFIR) at ORNL and the Advanced Test Reactor (ATR) at Idaho National Laboratory (INL). Specifically, current flowsheets utilize neptunium dioxide ( 237 NpO 2 ) targets. Aluminum (Al) powder is blended with 237 NpO 2 target material to improve thermal conductivity during irradiation. The current composition of 237 NpO 2 /Al pellets (i.e., cermets, or ceramic–metallics) is 20% 237 NpO 2 , 70% Al, and 10% void space. Al powders utilized by the 238 Pu program are high-fired under vacuum before blending into targets. The primary objective of this work is to measure the physical, chemical, and thermal properties of Al before and after the high-firing process. Properties of interest include the morphology, surface texture, particle size, crystal phase(s), and thermal conductivity of the material. These properties are measured with existing materials characterization equipment at ORNL, including powder x-ray diffraction (pXRD), scanning electron microscopy (SEM) with energy-dispersive spectroscopy (EDS), laser flash analysis (LFA), and thermogravimetric analysis (TGA). A secondary objective of this work is to compare the Al powders before and after the high-firing procedure to determine the effects of high-firing on chemical, physical, and thermal properties and to determine the efficacy of the high-firing process.
With the advent of high repetition rate laser facilities, novel diagnostic tools compatible with these advanced specifications are required. This paper presents the design of an active gamma-ray spectrometer intended for these high repetition rate experiments, with particular emphasis on functionality within a PW level laser-plasma interaction chamber’s extreme conditions. The spectrometer uses stacked scintillators to accommodate a broad range of gamma-ray energies, demonstrating its adaptability for various experimental setups. In addition, it has been engineered to maintain compactness, electromagnetic pulse resistance, and ISO-5 cleanliness requirements while ensuring high sensitivity. The spectrometer has been tested in real conditions inside the PW-class level interaction chamber at the BELLA center, LBNL. The paper further details the calibration process, which utilizes a 60 Co radioactive source, and describes the unfolding technique implemented through a stochastic minimization method.
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The capability to model LiOH growth on vacuum-baked LiH is a necessary precursor to making kinetic predictions of undesirable hydrogen outgassing from corroded LiH materials when placed in sealed-system applications. Here, in this work, LiH samples with initial LiOH surface corrosion layers less than 1.1 μm were outgassed by vacuum baking at high temperature to convert LiOH to Li 2 O. Diffuse-reflectance infrared Fourier transform (DRIFT) spectroscopy was used to measure the subsequent LiOH regrowth during exposure to 25–375 ppm of H 2 O vapor at room temperature. Logarithmic kinetics best model the growth of this coherent hydroxide corrosion layer (up to 1.5 μm) on previously vacuum-baked LiH samples. The logarithmic kinetics are attributed to the dissociation of H 2 O on the corrosion layer and the establishment of a H + /OH – electric field across the thickening LiOH corrosion layer. A time-dependent model of LiOH corrosion growth as a function of both initial LiOH thickness before vacuum baking and moisture partial pressures during re-exposure was developed to help researchers better assess the unwanted hydrogen outgassing potential from LiH/LiD materials.
Elucidating the mechanisms responsible for sub-microsecond desorption of water and other impurities from electrode surfaces at high heating rates is crucial for understanding pulsed power behavior. Ionization of desorbed impurities in the vacuum regions causes power or current loss; devising methods to limit such desorption during the short time scale of pulsed power is needed to improve corresponding applications. Previous molecular modeling studies have strongly suggested that, under high vacuum conditions, the amount of water impurity desorbing from oxide surfaces on metal electrodes is at a sub-monolayer level at room temperature, which appears insufficient to explain observed pulsed power energy losses at high current densities. In this work, we apply Density Functional Theory (DFT) techniques to show that hydrogen trapped inside iron metal can diffuse into hematite (α-Fe 2 O 3 ) on the metal surface, ultimately reacting with the oxide to form Fe(II) and H 2 O. The latter desorbs at elevated temperature and may explain the anomalous amount of desorbed impurity inferred from pulsed-power experiments. We also apply a suite of characterization techniques to demonstrate that when iron metal is heated to 650 °C, the dominant surface oxide component becomes α-Fe 2 O 3 . The oxide facets exposed are found to be a mixture of (0001), (10-10), and others, in agreement with the DFT models used.
This Laboratory Directed Research and Development (LDRD) project aimed at addressing an unmet need for physics-based models that enable prediction of electrical breakdown in the presence of high voltage gradients and real-world environments. This project focused on understanding coupled plasma-surface feedback phenomena critical to electrical discharge processes and design of breakdown voltages, breakdown times, and breakdown paths. New secondary electron emission and coupled plasma-surface measurement methods and models were developed. Highly reproducible discharge experiments were developed to provide current-voltage data as a function of time, and methods were developed to condition electrodes for predictable discharge. To assess plasma-surface feedback mechanisms, new surface physics capabilities, including measurement systems for local and global photoemission yield and ion-induced secondary electron emission yield were developed. Discharge models were developed to incorporate these yields for predicting discharge behavior to understand influence of surface physics on discharge current and time evolution, and methods to accelerate these simulations were demonstrated. A key finding was that the initiation process of a non-vacuum discharge appears highly dependent on photoemission at the cathode. Advanced diagnostics were developed, including spatial electrical field imaging, spectroscopy of plasmas, and high-speed imaging of discharge event s in metal and dielectric environments. These diagnostics and improved electrical models are a step toward enabling quantitative design margins, assurance of safety architectures, and implementation of novel materials and technologies for wide ranging energy and electronics applications.
A vacuum-free, high-throughput synthesis of indium tin oxide (ITO) via Combustion Oxidation with Rapid Plasma Processing (CORP) utilizes a solution-based exothermic combustion reaction to generate the oxide with tunable control of either amorphous or crystalline phases. A subsequent open-air, forming gas plasma treatment is used to introduce oxygen vacancies and promote crystallization. Here, the evolution of the oxide structure is elucidated by extended X-ray absorption spectroscopy fine structure analysis. Using CORP, fabrication of 300 cm 2 of ITO possessing a champion sheet resistance of 38 Ω sq. −1 , visible transmission of 89%, conductivity stability for over 250 days, roughness < 2nm, and Haacke figure of merit (%T 550nm 10 /R s ) of 0.012 Ω −1 is achieved. Cost modeling of CORP demonstrates up to a 67% reduction in price for TCOs using fully continuous, in-line unit operations compared with vacuum sputtering. The work shows a path toward a low-cost, vacuum-free manufacturing method for TCOs at commercial scales.
Alkali antimonide semiconductor photocathodes are promising candidates for high-brightness electron sources for advanced accelerators, including free-electron lasers (FEL), due to their high quantum efficiency (QE), low emittance, and high temporal resolution. Two challenges with these photocathodes are (1) the lack of a universal deposition recipe to achieve crystal stoichiometries and (2) their high susceptibility to vacuum contamination, which restricts their operation pressure to ultrahigh vacuums and leads to a short lifetime and low extraction charge. To resolve these issues, it is essential to understand the elemental compositions of deposited photocathodes and correlate them to robustness. Here, we report depth profiles for potassium cesium antimonide photocathodes, which were investigated using synchrotron radiation x-ray photoelectron spectroscopy, and the robustness of those photocathodes. We prepared two types of photocathodes with different potassium contents via sequential thermal evaporation. Depth profiles revealed that the photocathodes with a potassium deficit had excess cesium at the surface, while the ratio of potassium and cesium to antimony decreased rapidly within the film. In contrast, the photocathodes with sufficient potassium had close to the theoretical stoichiometry of K 2 CsSb at the surface and maintained that stoichiometry for over half the entire film thickness. Both photocathode types had a similar maximum QE at 532 nm; however, exposure to oxygen revealed that the photocathode with a crystalline stoichiometry of K 2 CsSb maintained QE at one order of magnitude higher pressure compared to its potassium-deficit counterpart. These results highlight the importance of synthesizing potassium cesium antimonide photocathodes with sufficient potassium to achieve the theoretical crystalline stoichiometry for both high QE and improved robustness.
2D materials, particularly transition metal dichalcogenides (TMDCs), have shown great potential for microelectronics and optoelectronics. However, a major challenge in commercializing these materials is the inability to control their doping at a wafer scale with high spatial fidelity. Interface chemistry is used with the underlying substrate oxide and concomitant exposure to visible light in ambient conditions for photo-dedoping wafer scale MoS 2 . It is hypothesized that the oxide layer traps photoexcited holes, leaving behind long-lived electrons that become available for surface reactions with ambient air at sulfur vacancies (defect sites) resulting in dedoping. Additionally, high fidelity spatial control is showcased over the dedoping process, by laser writing, and fine control achieved over the degree of doping by modulating the illumination time and power density. This localized change in MoS 2 doping density is very stable (at least 7 days) and robust to processing conditions like high temperature and vacuum. The scalability and ease of implementation of this approach can address one of the major issues preventing the “Lab to Fab” transition of 2D materials and facilitate its seamless integration for commercial applications in multi-logic devices, inverters, and other optoelectronic devices.