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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 235 records · Page 13
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Low-Temperature 2D/2D Ohmic Contacts in WSe 2 Field-Effect Transistors as a Platform for the 2D Metal–Insulator Transition

in this work, we report the fabrication of hexagonal-boron-nitride (hBN) encapsulated multiterminal WSe 2 Hall bars with 2D/2D low-temperature Ohmic contacts as a platform for investigating the two-dimensional (2D) metal-insulator transition. We demonstrate that the WSe 2 devices exhibit Ohmic behavior down to 0.25 K and at low enough excitation voltages to avoid current-heating effects. Additionally, the high-quality hBN-encapsulated WSe 2 devices in ideal Hall-bar geometry enable us to accurately determine the carrier density. Measurements of the temperature (T) and density (n s ) dependence of the conductivity σ(T, n s ) demonstrate scaling behavior consistent with a metalinsulator quantum phase transition driven by electron-electron interactions, but where disorder-induced local magnetic moments are also present. Our findings pave the way for further studies of the fundamental quantum mechanical properties of 2D transition metal dichalcogenides using the same contact engineering.

2D materials↗
DOE OSTI2022

An optoelectronic heterostructure for neuromorphic computing: CdS/V 3 O 5

Nonvolatile resistive switching is one of the key phenomena for emerging applications in optoelectronics and neuromorphic computing. In most of the cases, an electric field is applied to a two terminal dielectric material device and leads to the formation of a low resistance filament due to ion migration. However, the stochastic nature of the ion migration can be an impediment for the device robustness and controllability, with uncontrolled variations of high and low resistance states or threshold voltages. Here, we report an optically induced resistive switching based on a CdS/V 3 O 5 heterostructure which can overcome this issue. V 3 O 5 is known to have a second order insulator to metal transition around T c ≈ 415 K, with an electrically induced threshold switching at room temperature. Upon illumination, the direct transfer of the photoinduced carriers from the CdS into V 3 O 5 produces a nonvolatile resistive switching at room temperature. The initial high resistance can be recovered by reaching the high temperature metallic phase, i.e., temperatures above T c . Interestingly, this resistive switching becomes volatile around the T c . In conclusion, by locally manipulating the volatile and nonvolatile resistive switching using electric field and light, this system is a promising platform for hardware based neuromorphic computing implementations.

97 MATHEMATICS AND COMPUTING↗
NASA NTRS1982

Measuring the Electrical Properties of Epoxies

Two techniques rapidly determine low-frequency resistivity of conductive epoxies and high-frequency dielectric properties of insulating epoxies. Conductive epoxy is molded in channels in plastic block. Four-point ohmmeter is used to apply current and sense voltage; it reads out resistance. Because mold has precise and stable dimensions, it produces accurate consistent measurements.

Sergent, J. E.↗
NASA NTRS2012

Measurements and Simulations of Surface Dielectric Barrier Discharges Used as Plasma Actuators

This report is a Ph.D. dissertation performed under NRA cooperative agreement and submitted as part of the final report. Asymmetric surface dielectric barrier discharges (DBDs) have shown promise for use as aerodynamic actuators for active flow control. In this project we studied DBD actuators experimentally and numerically. Our DBDs used a symmetric triangular high voltage waveform to generate plasma in atmospheric pressure air. Time-averaged measurements indicated that the induced force of a single barrier actuator design (one electrode insulated from the plasma) can be increased exponentially above the results of previous studies by decreasing both the length and thickness of the electrode exposed to the plasma. This increased force may allow these devices to control flow separation in a wider range of flow environments. Experiments using an intensified digital camera to examine the plasma on time scales of a few nanoseconds showed that, in addition to the previously-observed filamentary and jet-like plasma structures, discharges with very thin exposed electrodes exhibited a weak but constant plasma immediately adjacent to those electrodes. In double-barrier actuators (both electrodes insulated), decreasing the diameter of the narrower electrode lead to increasing forces, and recorded images showed the simultaneous existence of both filamentary and jet-like plasma structures. The development and application of a time-dependent, two-dimensional computational fluid plasma model has aided in understanding the detailed physics of surface DBDs at all-time scales. For simulated single-barrier discharges, the model qualitatively reproduced the filamentary and jet-like micro-discharge structures. The model was somewhat successful in reproducing the observed characteristics of double-barrier actuators. For both actuator geometries, the model indicated that the majority of the forces induced on the neutral gas occur in between micro-discharges as the plasmas decay.

Hoskinson, Alan R.↗
DOE OSTI2020

Percolation and nanosecond fluctuators in V 2 O 3 films within the metal–insulator transition

Vanadium sesquioxide (V 2 O 3 ) exhibits a metal–insulator transition (MIT) at 160 K between a low temperature, monoclinic, antiferromagnetic Mott insulator and a high temperature, rhombohedral, paramagnetic, metallic phase. In thin films, a percolative transition takes place over a finite temperature range of phase coexistence. We study the fluctuating dynamics of this percolative MIT by measuring voltage noise spectra at both low frequencies (up to 100 kHz) and radio frequencies (between 10 MHz and 1 GHz). Noise intensity quadratic in bias is observed in the MIT region, as expected for resistive fluctuations probed nonperturbatively by the current. The low frequency noise resembles flicker-type 1/f β noise, often taking on the form of Lorentzian noise dominated by a small number of fluctuators as the volume fraction of the insulating phase dominates. Radio frequency noise intensity also quadratic in the bias current allows the identification of resistance fluctuations with lifetimes below 1 ns, approaching timescales seen in non-equilibrium pump–probe studies of the transition. We find quantitative consistency with a model for fluctuations in the percolative fraction. The thermodynamics of the MIT suggests that dominant fluctuations are ones that alter small volumes affecting the connectivity of domain boundaries. This noise serves as a sensitive and nonperturbative probe for the dynamics of switching phenomena in this system.

36 MATERIALS SCIENCE↗
NASA NTRS1981

Electrical switching in cadmium boracite single crystals

Cadmium boracite single crystals at high temperatures ( 300 C) were found to exhibit a reversible electric field-induced transition between a highly insulative and a conductive state. The switching threshold is smaller than a few volts for an electrode spacing of a few tenth of a millimeter corresponding to an electric field of 100 to 1000 V/cm. This is much smaller than the dielectric break-down field for an insulator such as boracite. The insulative state reappears after voltage removal. A pulse technique revealed two different types of switching. Unstable switching occurs when the pulse voltage slightly exceeds the switching threshold and is characterized by a pre-switching delay and also a residual current after voltage pulse removal. A stable type of switching occurs when the voltage becomes sufficiently high. Possible device applications of this switching phenomenon are discussed.

Takahashi, T.↗
DOE OSTI2020

Conductive Adhesives for Metallization of Interdigitated Back Contact Solar Cells

The metallization and interconnection of Si solar cells to form a module is usually a multi-step process: cells are metallized individually, soldered into strings, and subsequently assembled into a module. Furthermore, the metallization process for individual cells must be compatible with the doped surfaces being contacted, which creates additional challenges when moving from diffused junctions to heterojunctions and/or passivated contact structures. To mitigate these problems and streamline module manufacturing for the case of interdigitated back contact (IBC) cell modules, we developed an approach wherein unmetallized IBC cells are bonded directly to a circuitized backsheet using a conductive adhesive (CA) that only conducts out-of-plane. The metal/CA/silicon stack is bonded by hot-pressing at 100-200 degrees C.For a CA consisting of ethylene vinyl acetate (EVA) filled with Ag-coated spheres or indium powder we find that contact resistivities in the range of 1-10 Wcm 2 are obtained, regardless of which conductive filler and which hot pressing parameters are used. XPS revealed that about 1-2 nm EVA residue bonds to the Si in these samples, suggesting the formation of an insulating barrier that is responsible for the high contact resistance. Using indium powder alone, improved contact resistivities <0.6 Wcm 2 , high shunt resistances, and an implied open-circuit voltage loss below 10 mV were obtained. Furthermore, a cost estimate is presented, indicating that substantial cost savings of up to $10/m 2 , or about $0.05/W DC , are possible through CA-based IBC module manufacturing.

14 SOLAR ENERGY↗
DOE OSTI2025

Investigating the Performance of SF6 Replacement Gases to Enable the Next Generation of Pulsed Power

High voltage switches are essential components in pulsed power systems, where consistent and reliable performance is crucial—particularly as the field explores alternatives to SF 6 as an insulating gas. This project examines the self-break voltage distributions of various gases, with a focus on the low-voltage discharges observed in the lower tail of these distributions. Experimental results revealed that the specific housing design influenced the self-break behavior. Among the tested gases, air demonstrated a more favorable overall distribution compared to SF 6 , albeit requiring higher operating pressures. However, air also exhibited a greater likelihood of extremely low-voltage dropouts, raising concerns about its suitability as a direct replacement for SF 6 . Notably, all gases tested showed a higher-than-expected probability of low-voltage events when considering the tail of the distribution rather than the bulk behavior.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Grid-Connected Modular Soft-Switching Solid State Transformers (M-S4T)

The objective of this project is to develop and verify the concept of a flexible and modular soft-switching solid-state transformer (M-S4T) for direct grid-connected applications. The ability to directly connect power electronics converters to the medium voltage grid (4 kV – 13 kV), and to potentially replace the passive and bulky, but ubiquitous 60 hertz service transformer in the 25 kVA to 100 kVA range, with a more flexible and controllable device, has been regarded as the ‘holy grail’ in grid control. However, this has proven to be extremely difficult. This project has developed the solutions to several key challenges of the direct grid-connected power electronics and realized a 7.2 kV M-S4T prototype. First, a protection method to protect the M-S4T from the high voltages (110 kV for the 13 kV system) that occur on the grid due to transients and lightning strikes have been developed and experimentally verified. Second, the realization and the operation of the M-S4T based on high-voltage SiC devices (>3.3 kV) and a medium-frequency medium-voltage low-leakage transformer in a single-stage solid-state transformer with zero-voltage switching, low dv/dt, and low electromagnetic interference has been successfully demonstrated up to 7.5 kV peak. Third, an oil-cooling system and stable communication and distributed control system for converter module voltage sharing have been developed and experimentally verified. The developed M-S4T has realized a modular universal high-performance power conversion system. This conversion system is scalable to different voltage and power levels and adaptable to four-quadrant bidirectional operation. Moreover, the use of passive cooling techniques meets the equipment life requirements, and the lightning protection scheme fulfills the basic insulation level specifications for direct grid connection. Such power conversion system opens up near-term opportunities, including energy storage, solar PV, or electric vehicle charging with significant cost and footprint savings. In the longer term, the possibility of replacing the utility distribution transformer with an M-S4T will be transformative for future distribution grids with a compact footprint and full controllability to enable high renewable energy and storage penetration. In addition to the main project, this report expands on the Plus-Up projected including as part of the main award. This project developed and demonstrated the technology for autonomous collaborative inverters that can be connected in an ad hoc manner to the grid. The aim of the project was to: (1) evaluate the existing techniques for grid-connected inverters and find their limitations; (2) develop detailed requirements for grid-connected inverters in the modern grid with millions of active nodes; (3) design a unified control strategy that brings more autonomy and intelligence to grid-connected inverters, and addresses parts of the issues with the existing techniques. The proposed technique, called UniCon, enables inverters to 1) connect/disconnect to/from the grid in an ad hoc manner; (2) work based on local sensing. Slow communication could be used for a more optimized behavior; (3) work automatically in both grid-forming/grid-following mode; (4) handle large disturbances, e.g., big load step and fault, in an oscillation-free manner; (5) work collaboratively with other inverters in steady-state and during transients. UniCon can be implemented in the middle-level control; hence it is agnostic to the vendor and to the implementation of the inner voltage/current and protection loops. Furthermore, a new synchronization scheme, based on deep learning, was developed that can extract the grid voltage phase and amplitude in a stable manner. The method is cheap to implement can improve the dynamic performance of the grid-connected inverters during fast transients, e.g., fault. The proposed control scheme was validated by (1) MATLAB/Simulink; (2) hardware-in-the-loop results, and; (3) experimental results using three inverters that form a microgrid in a down-scaled feeder. Lastly, both the M-S4T and UniCon have achieved promising tangible paths to markets. In the case of the M-S4T, the underlying technology — the Soft Switching Solid State Transformer (S4T) developed at the Georgia Tech Center for Distributed Energy (GT-CDE) has been licensed by GridBlock from the Georgia Tech Research Corporation, and GridBlock has been working with manufacturing partner Jabil (one of the largest US-based contract manufacturers) and system integrator Power Secure (largest deployer of microgrids in the US with 4.7 GW under management), to meet the strong initial demand. Similarly, GridBlock has an exclusive license to the UniCon technology, developed under this award by GT-CDE. The UniCon provides an intermediate control layer that enables the implementation of the higher-level ‘transactive’ control commands for the system. The architecture of the system - slow communications with the cloud for system optimization and setpoints, and the use of locally measured quantities for real-time control, provide a very robust and secure way of implementing a real-time must-run grid that is also secure and stable. This is a brand-new functionality that is critical for the future grid and key to GridBlock’s business model.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2021

Fielding and analyzing performance of a prototype high voltage output gas switch for Saturn

Timing spread between the thirty-six Saturn modules affects peak electrical power delivered to the Bremsstrahlung diode and can affect vacuum power flow and impedance behavior of the load. To reduce the module spread, a new megavolt gas-insulated closing switch was developed employing design techniques developed for the Z-machine laser triggered switches while retaining Saturn’s simpler electrical triggering. Two modules were temporarily outfitted with the new switches and used separately into local resistive loads (instead of the usual Saturn electron beam load). A reliable operating point and switch time jitter at that point were the goals of the experiments. The target switch reliability is less than one pre-fire in one thousand switch-shots, and a timing standard deviation of 4 nanoseconds. The switches were able to meet both requirements but the number of tests at the chosen point are limited.

43 PARTICLE ACCELERATORS↗
DOE OSTI2021

Electrostatic Design and Characterization of a 200 keV Photogun and Wien Spin Rotator

High-energy nuclear physics experiments at the Jefferson Lab Continuous Electron Beam Accelerator Facility (CEBAF) require high spin-polarization electron beams produced from strained super-lattice GaAs photocathodes activated to negative electron affinity in a high voltage photogun operating at 130 kV dc. A pair of Wien filter spin rotators in the injector provides precise control of the electron beam polarization at the end station target. An upgrade of the CEBAF injector to better support the upcoming Moller experiment requires increasing the electron beam energy to 200 keV, resulting in better transmission through injector apertures and improved photocathode lifetime. In addition, the energy increase is expected to reduce unwanted helicity correlated intensity and position systematics. These requirements led to the design of a shielding electrode described in this work, which minimizes the electric field at the triple-point junction and linearizes the potential along the insulator, thus reducing the risk of field emission induced insulator arcing. The Wien spin rotator design was modified for increasing the electric field from 1.6 to 2.7 MV/m and the magnetic field from 9.1 to 13 mT. The upgrades required detailed modeling in Solidworks, electrostatic simulations using CST, beam dynamics using GPT, device implementation, and in situ high voltage characterization of the world?s first 200 keV polarized photoelectron gun and compatible Wien filter spin rotator.

Palacios-Serrano, Gabriel↗
DOE OSTI2026

Oil-impregnated densified wood veneer with high electrical insulation enabled by nanosized oil channels

Growing energy demands and renewable integration are stressing the aging power grid infrastructure. Lignocellulosic oil-impregnated paper is widely used in power transformers but suffers from critical limitations, such as low dielectric strength, mechanical strength, and thermal conductivity, causing premature transformer failures. Here, we demonstrate a superior electrically insulating oil-impregnated paper design using the naturally anisotropic structure of densified wood veneer to achieve nanosized channels of oil that efficiently disrupt electrical breakdown pathways. The developed oil-impregnated densified wood (ODW) creates aligned cellulose fibers with 166 ± 87–nanometer oil nanochannels, achieving record dielectric strength of 105 kilovolts per millimeter. The structure also delivers a mechanical strength of up to 384 megapascals and a thermal conductivity of 0.33 watts per meter per kelvin, enabling enhanced longevity upon thermal aging tests. The ODW could replace conventional transformer insulation to enhance power transformer performance and improve lifetime. Moreover, its anisotropic oil-filled nanochannel design offers a general strategy for hybrid dielectrics in medium- and high-voltage applications.

36 MATERIALS SCIENCE↗
NASA NTRS1978

Investigation of high voltage spacecraft system interactions with plasma environments

The exposure of high voltage spacecraft systems to the charged particle environment of space can produce interactions that will influence system operation. An experimental investigation of these interactions has been undertaken for insulator and conductor test surfaces biased up to plus or minus 1 kV in a simulated low earth orbit charged particle environment. It has been found that these interactions are controlled by the insulator surfaces surrounding the biased conductors. For positive applied voltages the electron current collection can be enhanced by the insulators. For negative applied voltages the insulator surface confines the voltage to the conductor region; this can cause arcing. Understanding these interactions and the technology to control their impact on system operation is essential to the design of solar cell arrays for ion drive propulsion applications that use direct drive power processing.

Stevens, N. J.↗
NASA NTRS1997

The Diagnostics of the External Plasma for the Plasma Rocket

Three regions of plasma temperature/energy are being investigated to understand fully the behavior of the plasma created by the propulsion device and the operation of the RPA. Each type of plasma has a RPA associated with it; i.e. a thermal RPA, a collimated RPA, and a high temperature RPA. Through the process of developing the thermal and collimated RPAs, the proper knowledge and experience has been gained to not only design a high temperature RPA for the plasma rocket, but to understand its operation, results, and uncertainty. After completing a literature search for, reading published papers on, and discussing the operation of the RPA with electric propulsion researchers, I applied the knowledge gained to the development of a RPA for thermal plasma. A design of a thermal RPA was made which compensates for a large Debye length and low ionized plasma. From this design a thermal RPA was constructed. It consists of an outer stainless steel casing, a phenolic insulator (outgases slightly), and stainless steel mesh for the voltage screens. From the experience and knowledge gained in the development of the thermal RPA, a RPA for collimated plasma was developed. A collimated RPA has been designed and constructed. It compensate for a smaller Debye length and much higher ionization than that existing in the thermal plasma. It is 17% of the size of the thermal RPA. A stainless steel casing shields the detector from impinging electrons and ions. An insulating material, epoxy resin, was utilized which has a negligible outgassing. This material can be molded in styrofoam and machined quite nicely. It is capable of withstanding moderately high temperatures. Attached to this resin insulator are inconel screens attached by silver plated copper wire to a voltage supply. All the work on the RPAs and thermal ion source, I performed in the University of Alabama in Huntsville's (UAH) engineering machine shop.

Karr, Gerald R.↗
NASA NTRS1991

Silicon dioxide with a silicon interfacial layer as an insulating gate for highly stable indium phosphide metal-insulator-semiconductor field effect transistors

A novel gate insulator consisting of silicon dioxide (SiO2) with a thin silicon (Si) interfacial layer has been investigated for high-power microwave indium phosphide (InP) metal-insulator-semiconductor field effect transistors (MISFETs). The role of the silicon interfacial layer on the chemical nature of the SiO2/Si/InP interface was studied by high-resolution X-ray photoelectron spectroscopy. The results indicated that the silicon interfacial layer reacted with the native oxide at the InP surface, thus producing silicon dioxide, while reducing the native oxide which has been shown to be responsible for the instabilities in InP MISFETs. While a 1.2-V hysteresis was present in the capacitance-voltage (C-V) curve of the MIS capacitors with silicon dioxide, less than 0.1 V hysteresis was observed in the C-V curve of the capacitors with the silicon interfacial layer incorporated in the insulator. InP MISFETs fabricated with the silicon dioxide in combination with the silicon interfacial layer exhibited excellent stability with drain current drift of less than 3 percent in 10,000 sec, as compared to 15-18 percent drift in 10,000 sec for devices without the silicon interfacial layer. High-power microwave InP MISFETs with Si/SiO2 gate insulators resulted in an output power density of 1.75 W/mm gate width at 9.7 GHz, with an associated power gain of 2.5 dB and 24 percent power added efficiency.

Kapoor, V. J.↗
DOE OSTI2021

Strong interlayer charge transfer due to exciton condensation in an electrically isolated GaAs quantum well bilayer

We introduce a design of electrically isolated “floating” bilayer GaAs quantum wells (QW), in which application of a large gating voltage controllably and highly reproducibly induces charges that remain trapped in the bilayer after removal of the gating voltage. At smaller gate voltages, the bilayer is fully electrically isolated from external electrodes by thick insulating barriers. This design permits full control of the total and differential densities of two coupled 2D electron systems. The floating bilayer design provides a unique approach for studying systems inaccessible by simple transport measurements. It also provides the ability to measure the charge transfer between the layers, even when the in-plane resistivities of the 2D systems diverge. We measure the capacitance and inter-layer tunneling spectra of the QW bilayer with independent control of the top and bottom layer electron densities. Our measurements display strongly enhanced inter-layer tunneling current at v T =1, a signature of exciton condensation of a strongly interlayer-correlated bilayer system. With fully tunable densities of individual layers, the floating bilayer QW system provides a versatile platform to access previously unavailable information on the quantum phases in electron bilayer systems.

42 ENGINEERING↗
DOE OSTI2021

Tritiated Sulfur Hexafluoride Disposition Strategies

Tritium (T 2 ) is a radioactive isotope of hydrogen that is produced in nuclear fission reactions and is often used in nuclear fusion reactions and accelerator-based applications for medical isotope production. As a hydrogen isotope, tritium can readily bind to hydroxyl radicals (OH), forming tritiated water (HTO or T 2 0), and to carbon atoms. Tritium decays to helium-3 ( 3 He) via beta-decay with max decay energy of 18.6 keV. While it is not an external radiation hazard, it can be an internal radiation hazard if tritium is inhaled, ingested, or absorbed through the skin. In applications where tritium is handled, tritium confinement is performed using different barriers to minimize releases to the environment. For gaseous (elemental), liquid (oxide), and metal (hydride) tritium, process piping and components provide the primary confinement function. Secondary tritium confinement is typically provided by inert (i.e. non-flammable gases such as nitrogen, argon, or helium) gloveboxes which are connected to a tritium stripper system. Primary tritium confinement barriers typically produce low volumes of high tritium concentrations of tritiated methane from carbon in steels or organic materials along with tritiated water/tritium oxide (e.g. HTO) and tritiated ammonia from reactions with oxygen and nitrogen. Tritium escaping primary confinement into secondary confinement atmospheres (e.g. gloveboxes) produce higher volumes of lower activity contamination than found in process piping. Tritium contamination also occurs by leaks or tritium permeation/diffusion through confinement materials. Tritium from inside primary confinement barriers will diffuse or leak out of the primary confinement barrier and usually into the air, if the system is inside an air hood or ventilated hot cell, or into the secondary confinement (e.g. glovebox) atmosphere which is either exhausted or stripped based on the function of the secondary confinement (glovebox) system. Accelerator based processes for medical isotope production represent an atypical tritium contamination challenge. In medical isotope production, deuterium supply gas is ionized and accelerated to a tritium gas target to produce neutrons that are then used to produce the medical isotopes through additional nuclear fission reactions. To create large voltage differentials for accelerator operations, an electrical insulation medium is needed to prevent or rapidly quench electric discharges. A common electrical insulation medium utilized in accelerator applications is sulfur hexafluoride (SF 6 ) gas. SF 6 has a high dielectric strength and allows for the construction of smaller accelerator systems compared to other electrical insulation mediums such as air or dry nitrogen. Due to tritium permeation/diffusion through accelerator process and confinement materials, there is the possibility that tritium can contaminate the electrical insulation medium of the accelerator. Tritium contaminated SF 6 creates a material without any obvious processes for managing the contamination, reuse, or disposal of the used SF 6 . This document will discuss possible management strategies for tritium contaminated SF 6 for accelerator-based processes for Molybdenum-99 (Mo-99) production.

07 ISOTOPE AND RADIATION SOURCES↗
DOE OSTI2024

Modular Coaxial Power Converter for High-Density Integration into Medium-Voltage Cables

This work proposes to combine the functionality benefits of power electronics with the power density benefits of medium-voltage cables to create a streamlined, high-density power electronics solution that seamlessly integrates with medium-voltage cables. Located at the ends of a medium- or high-voltage line, the proposed converter uses a cascade of coaxial power conversion cells to gradually step down the voltage, and excels in high step-down applications. By mimicking the coaxial geometry of medium-voltage cables, the converter preserves the axisymmetric electric field of the cable which, when combined with a solid insulating dielectric, provides a voltage scaling advantage over conventional planar and PCB-based converter solutions. Similar to medium voltage cables, the converter is fully passively cooled. A passive cooling strategy allows for combined installation with existing medium voltage cable systems without the added cost, maintenance needs, infrastructure, and reliability concerns associated with active cooling systems. The scalability of the modular structure in combination with the integration benefits provide a flexible power electronics system that can adapt to the evolving demands of the grid.

coaxial power conversion cells↗