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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 235 records · Page 13
All sourcesNASA NTRSDOE OSTI
DOE OSTI2019

Induced Quasi-Dynamic Disorder in a Structure of Rhenium Ion-Implanted Quartz Glass

The ultraviolet (UV) absorption spectra were studied in UV–Vis–IR quartz glasses exposed to the rhenium ion irradiation at the energy of 30 keV. An increase in ion fluence (5 × 10{sup 15}–5 × 10{sup 17} cm{sup 2}) is found to result in a characteristic fan-shaped broadening of the optical absorption edge of glasses. The results were interpreted in the context of the generalized Urbach rule (the approximation of ion radiation induced quasi-dynamic disorder). The effective radiation disorder cross section of a glass matrix was evaluated from the dose dependence of characteristic Urbach energy. This parameter was found to vary between 1.07 × 10{sup –17}–1.2 × 10{sup –18} cm{sup 2} with increasing fluence. The optical gap width of implanted samples was estimated via the Tautz method for allowed direct interband transitions. The relationship between the second-order deformation potential constants, revealing the correlation between the Urbach energy and the optical gap width in a SiO{sub 2} quartz glass matrix was established using the equivalence principle of static and dynamic structural disorder.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Terrestrial atmospheric ion implantation occurred in the nearside lunar regolith during the history of Earth’s dynamo

Light volatile elements in lunar regolith are thought to be a mixture of the solar wind and Earth’s atmosphere, the latter sourced in the absence of geomagnetic field. However, the extent to which both the current and primitive geodynamo influence the transport of terres trial ions still remains unclear, and this uncertainty is further complicated by the enigmatic composition and poorly constrained location of the Eoarchean exosphere. Here we use 3-D MHD numerical simulations with contemporary magnetized and Archean unmagnetized atmospheres to investigate how Earth’s intrinsic magnetic field affects this transfer, aiming to constrain how and when the lunar isotopic signature provides a record of Earth’s pale-oatmosphere. We find that atmospheric transfer is efficient only when the Moon is within Earth’s magnetotail. The non-solar contribution to the lunar soil is best explained by implantation during the long history of the geodynamo with present-day solar wind conditions, rather than any short, putatively unmagnetized epoch of early Archean Earth. This further suggests the history of the terrestrial atmosphere, spanning billions of years, could be preserved in buried lunar soils. Our results indicate that the elemental abundances of Apollo samples are very sensitive to Earth’s hydrodynamic exobase altitude, which, at the time of ion implantation, was never smaller than 190 km.

Atmospheric dynamics↗
DOE OSTI2015

Change in equilibrium position of misfit dislocations at the GaN/sapphire interface by Si-ion implantation into sapphire. II. Electron energy loss spectroscopic study

In Part I, we have shown that the addition of Si into sapphire by ion implantationmakes the sapphire substrate elastically softer than for the undoped sapphire. The more compliant layer of the Si-implanted sapphire substrate can absorb the misfit stress at the GaN/sapphire interface, which produces a lower threading-dislocation density in the GaN overlayer. Here in Part II, based on experimental results by electron energy loss spectroscopy and a first-principle molecular orbital calculation in the literature, we suggest that the softening effect of Si results from a reduction of ionic bonding strength in sapphire (α-Al{sub 2}O{sub 3}) with the substitution of Si for Al.

36 MATERIALS SCIENCE↗
DOE OSTI2023

1.2-kV Vertical GaN PIN Rectifier With Ion-Implanted Floating Guard Rings

Here, this work reports on the fabrication and properties of a homojunction gallium nitride (GaN) p-i-n (PIN) rectifier fabricated on a free-standing GaN substrate. Uniform device performance is achieved with breakdown voltage (BV) >1.2 kV and low ON-resistance × area ( R ON A ). The statistics of the BV measurements show 58.5% of devices achieve BV >1.3 kV, and 71.1% of devices achieve BV >1.2 kV, as attributed to high quality and control in both epitaxial growth and device process. At room temperature, R ON A is 0.23 mΩ∙ cm 2 at a current density ( J ) of 6.9 kA/cm2. The corresponding Baliga’s figure of merit is >5.97 GW/cm 2 . Temperature-dependent reverse I – V measurements were performed and show a positive temperature coefficient of 0.42 V/K, indicating the avalanche capability of reverse breakdown. Further analysis with the Poole-Frenkel model on the temperature-dependent measurement suggested that a trap-assisted tunneling process contributed to the reverse leakage current. Floating guard rings (FGRs) formed by nitrogen implantation serve as an effective edge termination technique in these GaN PIN rectifiers, resulting in uniform performance in both forward and reverse bias.

42 ENGINEERING↗
DOE OSTI2015

Photothermal Superheating of Water with Ion-Implanted Silicon Nanowires

Nanoparticle-mediated photothermal (PT) cancer therapy has been a major focus in nanomedicine due to its potential as an effective, non-invasive, and targeted alternative to traditional cancer therapy based on small-molecule pharmaceuticals[1,2]. Gold nanocrystals have been a primary focus of PT research[3], which can be attributed to their size tunability[4], well understood conjugation chemistry[5], and efficient absorption of NIR radiation in the tissue transparency window (800 nm – 1 μm) due to their size-dependent localized surface plasmon resonances[6].

Environmental Molecular Sciences Laboratory↗
DOE OSTI2016

Characterization of Ion Implantation and Irradiation Effects in Interface-Dominated Metallic Composites

The candidate structural and fuel cladding materials for the next-generation nuclear power reactors must possess excellent irradiation damage tolerance, and high mechanical and thermal stability that present a challenge for materials design. Here we report an approach to engineer interphase boundaries in metallic composites to achieve superior resistance to void swelling and prevent loss of plastic deformability after irradiation. Model composite systems of face-centered-cubic (Cu) and body-centered-cubic (Nb, Mo or V) metals are used to elucidate the effects of boundary structure and spacing on the damage accumulation and mechanical properties after irradiation. Transmission electron microscopy (TEM) and nano-mechanical testing are used to characterize the irradiation response. A recent development in in situ straining in high-resolution TEM to measure lattice strains and thereby estimate local stresses corresponding to dislocation nucleation and migration is discussed as a capability that in future can enable quantitative characterization of defect interactions in irradiated materials. (authors)

36 MATERIALS SCIENCE↗
DOE OSTI2024

Precise Fermi level engineering in a topological Weyl semimetal via fast ion implantation

The precise controllability of the Fermi level is a critical aspect of quantum materials. For topological Weyl semimetals, there is a pressing need to fine-tune the Fermi level to the Weyl nodes and unlock exotic electronic and optoelectronic effects associated with the divergent Berry curvature. However, in contrast to two-dimensional materials, where the Fermi level can be controlled through various techniques, the situation for bulk crystals beyond laborious chemical doping poses significant challenges. Here, we report the milli-electron-volt (meV) level ultra-fine-tuning of the Fermi level of bulk topological Weyl semimetal tantalum phosphide using accelerator-based high-energy hydrogen implantation and theory-driven planning. By calculating the desired carrier density and controlling the accelerator profiles, the Fermi level can be experimentally fine-tuned from 5 meV below, to 3.8 meV below, to 3.2 meV above the Weyl nodes. High-resolution transmission electron microscopy reveals the crystalline structure is largely maintained under irradiation, while electrical transport indicates that Weyl nodes are preserved and carrier mobility is also largely retained. Our work demonstrates the viability of this generic approach to tune the Fermi level in semimetal systems and could serve to achieve property fine-tuning for other bulk quantum materials with ultrahigh precision.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Effect of argon ion implantation on the electrical and dielectric properties of CR-39

The objective of the present work is to study the effect of 130 keV Ar{sup +} ions on the electrical and dielectric properties of CR-39 samples at various doses 5×10{sup 14}, 1×10{sup 15} and 1×10{sup 16} Ar{sup +} cm{sup −2}. Current-Voltage (I-V characteristics) measurements have been used to study the electrical properties of virgin and Ar{sup +} implanted CR-39 specimens. The current has been found to be increased with increasing voltage as well as with increasing ion dose. The dielectric spectroscopy of these specimens has been done in the frequency range of 100 kHz-100 MHz. The dielectric constant has been found to be decreasing whereas dielectric loss factor increases with increasing ion fluence. These kind of behavior observed in the implanted specimens indicate towards the formation of carbonaceous clusters due to the cross linking, chemical bond cleavage, formation of free radicals. The changes observed in the dielectric behavior have been further correlated with the structural changes observed through I-V characteristics.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1980

More-reliable SOS ion implantations

Conducting layer prevents static charges from accumulating during implantation of silicon-on-sapphire MOS structures. Either thick conducting film or thinner film transparent to ions is deposited prior to implantation, and gaps are etched in regions to be doped. Grounding path eliminates charge flow that damages film or cracks sapphire wafer. Prevention of charge buildup by simultaneously exposing structure to opposite charges requires equipment modifications less practical and more expensive than deposition of conducting layer.

Woo, D. S.↗
NASA NTRS1974

Ion implantation effects in 'cosmic' dust grains

Cosmic dust grains, whatever their origin may be, have probably suffered a complex sequence of events including exposure to high doses of low-energy nuclear particles and cycles of turbulent motions. High-voltage electron microscope observations of micron-sized grains either naturally exposed to space environmental parameters on the lunar surface or artificially subjected to space simulated conditions strongly suggest that such events could drastically modify the mineralogical composition of the grains and considerably ease their aggregation during collisions at low speeds. Furthermore, combined mass spectrometer and ionic analyzer studies show that small carbon compounds can be both synthesized during the implantation of a mixture of low-energy D, C, N ions in various solids and released in space by ion sputtering.

Bibring, J. P.↗
NASA NTRS1984

Radiation damage and defect behavior in ion-implanted, lithium counterdoped silicon solar cells

Boron doped silicon n+p solar cells were counterdoped with lithium by ion implanation and the resultant n+p cells irradiated by 1 MeV electrons. The function of fluence and a Deep Level Transient Spectroscopy (DLTS) was studied to correlate defect behavior with cell performance. It was found that the lithium counterdoped cells exhibited significantly increased radiation resistance when compared to boron doped control cells. It is concluded that the annealing behavior is controlled by dissociation and recombination of defects. The DLTS studies show that counterdoping with lithium eliminates at least three deep level defects and results in three new defects. It is speculated that the increased radiation resistance of the counterdoped cells is due primarily to the interaction of lithium with oxygen, single vacancies and divacancies and that the lithium-oxygen interaction is the most effective in contributing to the increased radiation resistance.

Weinberg, I.↗
DOE OSTI2017

The detection of He in tungsten following ion implantation by laser-induced breakdown spectroscopy

Laser-induced breakdown spectroscopy (LIBS) results are presented that provide depth-resolved identification of He implanted in polycrystalline tungsten (PC-W) targets by a 200 keV He+ ion beam, with a surface temperature of approximately 900 °C and a peak fluence of 10 23 m –2 . He retention, and the influence of He on deuterium and tritium recycling, permeation, and retention in PC-W plasma facing components are important questions for the divertor and plasma facing components in a fusion reactor, yet are difficult to quantify. The purpose of this work is to demonstrate the ability of LIBS to identify helium in tungsten; to investigate the sensitivity of laser parameters including, laser energy and gate delay, that directly influence the sensitivity and depth resolution of LIBS; and to perform a proof-of-principle experiment using LIBS to measure relative He intensities as a function of depth. In conclusion, the results presented demonstrate the potential not only to identify helium but also to develop a methodology to quantify gaseous impurity concentration in PC-W as a function of depth.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
NASA NTRS1973

Neutral beam dose and sputtering characteristics in an ion implantation system

A technique and instrument design for calorimetric detection of the neutral atom content of a 60 keV argon ion beam. A beam sampling method is used to measure local heat flux to a small platinum wire at steady state; integration of power density profiles leads to a determination of equivalent neutral beam current. The fast neutral production occurs as a result of charge transfer processes in the region of the beam system between analyzing magnet and beam stop where the pressure remains less than .00001 torr. A description of the neutral beam detector is given in section along with a presentation of results. An elementary analysis of sputter material transport from target to substrate was performed; the analysis relates to semiconductor sputtering.

Roberts, A. S., Jr.↗
DOE OSTI2017

Ion implantation for deterministic single atom devices

Here, we demonstrate a capability of deterministic doping at the single atom level using a combination of direct write focused ion beam and solid-state ion detectors. The focused ion beam system can position a single ion to within 35 nm of a targeted location and the detection system is sensitive to single low energy heavy ions. This platform can be used to deterministically fabricate single atom devices in materials where the nanostructure and ion detectors can be integrated, including donor-based qubits in Si and color centers in diamond.

36 MATERIALS SCIENCE↗
NASA NTRS1981

Method of making V-MOS field effect transistors utilizing a two-step anisotropic etching and ion implantation

A method of making V-MOS field effect transistors is disclosed wherein a masking layer is first formed over a surface of a crystalline substrate. An aperture is then formed in the masking layer to expose the surface of the substrate. An anisotropic etchant is applied to the exposed surface so that a groove having a decreasing width within increasing depth is formed. However, the etch is not allowed to go to completion with the result that a partially formed V-shaped groove is formed. Ions are accelerated through the aperture for implantation in the crystalline substrate in the lower portion of the partially formed V-shaped groove. Thereafter, an anisotropic etchant is reapplied to the partially formed V-shaped groove, and the etch is allowed to go to completion.

Jhabvala, M. D.↗