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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 235 records · Page 13
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

Resistive switching in a few nanometers thick tantalum oxide film formed by a metal oxidation

Resistive switching in a Cu/Ta{sub 2}O{sub 5}/Pt structure that consisted of a few nanometer-thick Ta{sub 2}O{sub 5} film was demonstrated. The Ta{sub 2}O{sub 5} film with thicknesses of 2–5 nm was formed with a combination of Ta metal film deposition and neutral oxygen particle irradiation at room temperature. The device exhibited a bipolar resistive switching with a threshold voltage of 0.2 V and multilevel switching operation.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2017

Stochastic Gain Degradation in III-V Heterojunction Bipolar Transistors due to Single Particle Displacement Damage

As device dimensions decrease single displacement effects are becoming more important. We measured the gain degradation in III-V Heterojunction Bipolar Transistors due to single particles using a heavy ion microbeam. Two devices with different sizes were irradiated with various ion species ranging from oxygen to gold to study the effect of the irradiation ion mass on the gain change. From the single steps in the inverse gain (which is proportional to the number of defects) we calculated Cumulative Distribution Functions to help determine design margins. The displacement process was modeled using the Marlowe Binary Collision Approximation (BCA) code. The entire structure of the device was modeled and the defects in the base-emitter junction were counted to be compared to the experimental results. While we found good agreement for the large device, we had to modify our model to reach reasonable agreement for the small device.

42 ENGINEERING↗
NASA NTRS1990

The effect of neutron irradiation on the properties of AlGaAs/GaAs laser diodes

The effects of neutron irradiation on several properties of both single and multiple stripe laser diodes have been examined. Prior to fast neutron irradiation, total light output as a function of laser current, threshold current, near-field pattern, far-field pattern, and laser output wavelength spectra were measured at room temperature. These measurements were then repeated at intermittent neutron fluence levels. It was observed that the threshold current increased with neutron fluence for all devices examined. In contrast, neutron irradiation had only an indirect effect on the remainder of the laser diode properties in that the higher currents required for operation after irradiation caused variations in these properties.

Barnes, C. E.↗
DOE OSTI2020

Impact of nuclear reactor radiation on the performance of AlN/sapphire surface acoustic wave devices

The performance of an AlN/sapphire surface acoustic wave (SAW) delay line device was characterized in real time under irradiation inside a nuclear reactor. Both its resonant frequency and transmission efficiency were observed to respond to a change in reactor power. The response follows an exponentially saturating behavior after a step power increase, followed by an exponentially decaying recovery after reactor shutdown. A sensitivity analysis based on the governing electro-mechanical equations shows that the frequency shift can be attributed to the softening of sapphire’s elastic constants under neutron radiation. Additionally, a kinetic rate equation is adopted to interpret device response and describe its microstructural evolution. These results suggest that the AlN/sapphire SAW device remains functional under irradiation, is sensitive to neutron and gamma ray fluxes, and offers an opportunity for remote sensing and in-situ measurement of material properties when exposed to nuclear reactor environment.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2016

Influence of ultraviolet irradiation on data retention characteristics in resistive random access memory

With increasing density of memory devices, the issue of generating soft errors by cosmic rays is becoming more and more serious. Therefore, the irradiation resistance of resistance random access memory (ReRAM) to cosmic radiation has to be elucidated for practical use. In this paper, we investigated the data retention characteristics of ReRAM against ultraviolet irradiation with a Pt/NiO/ITO structure. Soft errors were confirmed to be caused by ultraviolet irradiation in both low- and high-resistance states. An analysis of the wavelength dependence of light irradiation on data retention characteristics suggested that electronic excitation from the valence to the conduction band and to the energy level generated due to the introduction of oxygen vacancies caused the errors. Based on a statistically estimated soft error rates, the errors were suggested to be caused by the cohesion and dispersion of oxygen vacancies owing to the generation of electron-hole pairs and valence changes by the ultraviolet irradiation.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2017

Optical nanoscopy of high T c cuprate nanoconstriction devices patterned by helium ion beams

Helium ion beams (HIB) focused to subnanometer scales have emerged as powerful tools for high-resolution imaging as well as nanoscale lithography, ion milling, or deposition. Quantifying irradiation effects is an essential step toward reliable device fabrication, but most of the depth profiling information is provided by computer simulations rather than the experiment. Here, we demonstrate the use of atomic force microscopy (AFM) combined with scanning near-field optical microscopy (SNOM) to provide three-dimensional (3D) dielectric characterization of high-temperature superconductor devices fabricated by HIB. By imaging the infrared dielectric response obtained from light demodulation at multiple harmonics of the AFM tapping frequency, we find that amorphization caused by the nominally 0.5 nm HIB extends throughout the entire 26.5 nm thickness of the cuprate film and by ~500 nm laterally. This unexpectedly widespread damage in morphology and electronic structure can be attributed to a helium depth distribution substantially modified by the internal device interfaces. Lastly, our study introduces AFM-SNOM as a quantitative tomographic technique for noninvasive 3D characterization of irradiation damage in a wide variety of nanoscale devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Pixel Detector Developments for Tracker Upgrades of the High Luminosity LHC

This paper reports on the INFN (Istituto Nazionale di Fisica Nucleare, Italy) research activity in collaboration with FBK foundry, which is aiming at the development of new pixel detectors for the LHC Phase-2 upgrades. The R&D covers both planar pixel devices and 3D detectors built using columnar technology. All sensors are low thickness n-in-p type, as this is the general direction envisaged for the High Luminosity LHC pixel detector upgrades. Hybrid modules with 100 $\upmu $ m and 130 $\upmu $ m active thickness, connected to the PSI46dig readout chip, have been tested on beam test experiments. Selected preliminary results from test beams are described for both planar and 3D devices. The results on the 3D pixel sensors before irradiation are very satisfactory and support the conclusion that columnar devices are very good candidates for the inner layers of the upgrade pixel detectors.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2022

Measuring sub-surface spatially varying thermal conductivity of silicon implanted with krypton

The thermal properties of semiconductors following exposure to ion irradiation are of great interest for the cooling of electronic devices; however, gradients in composition and structure due to irradiation often make the measurement difficult. Furthermore, the nature of spatial variations in thermal resistances due to spatially varying ion irradiation damage is not well understood. In this work, we develop an advancement in the analysis of time-domain thermoreflectance to account for spatially varying thermal conductivity in a material resulting from a spatial distribution of defects. We then use this method to measure the near-surface (≲1 μm) thermal conductivity of silicon wafers irradiated with Kr + ions, which has an approximate Gaussian distribution centered 260 nm into the sample. Our numerical analysis presented here allows for the spatial gradient of thermal conductivity to be extracted via what is fundamentally a volumetric measurement technique. We validate our findings via transmission electron microscopy, which is able to confirm the spatial variation of the sub-surface silicon structure, and provide additional insight into the local structure resulting from the effects of ion bombardment. Thermal measurements found the ion stopping region to have a nearly 50x reduction in thermal conductivity as compared to pristine silicon, while TEM showed the region was not fully amorphized. Our results suggest this drastic reduction in silicon thermal conductivity is primarily driven by structural defects in crystalline regions along with boundary scattering between amorphous and crystalline regions, with a negligible contribution being due to implanted krypton ions themselves.

36 MATERIALS SCIENCE↗
DOE OSTI2015

First multicharged ion irradiation results from the CUEBIT facility at Clemson University

A new electron beam ion trap (EBIT) based ion source and beamline were recently commissioned at Clemson University to produce decelerated beams of multi- to highly-charged ions for surface and materials physics research. This user facility is the first installation of a DREEBIT-designed superconducting trap and ion source (EBIS-SC) in the U.S. and includes custom-designed target preparation and irradiation setups. An overview of the source, beamline, and other facilities as well as results from first measurements on irradiated targets are discussed here. Results include extracted charge state distributions and first data on a series of irradiated metal-oxide-semiconductor (MOS) device targets. For the MOS devices, we show that voltage-dependent capacitance can serve as a record of the electronic component of ion stopping power for an irradiated, encapsulated oxide target.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2019

New Framework to Prevent Catastrophic Damage to Laser Diodes

We created a new framework and conducted first set of validation experiments to characterized diode damage by back-irradiance from reflections for a range of device configurations and operating conditions. The work conducted provides evidence that previously observed back-irradiance induced catastrophic damage in diodes is thermally driven and allows estimation of diode lifetime through the new framework if specific back-irradiance and diode parameters are known. The enhanced ability to predict diode damage from back-irradiance will allow improved diode-pumped laser designs for a variety of defense, science, and industrial applications.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2018

Operational domain of Proto-MPEX

The Prototype-Material Plasma Exposure eXperiment (Proto-MPEX) is a linear plasma device to test the plasma source concepts for the future Material Plasma Exposure eXperiment (MPEX). MPEX is planned to address plasma material interactions under fusion reactor divertor conditions as will occur in devices like DEMO, including the plasma exposure of a-priori neutron irradiated materials. This requires a novel linear plasma device with a plasma source that can produce high electron densities along with heating systems to obtain high electron and ion temperatures. In Proto-MPEX a high-power helicon source was tested together with electron heating (28 GHz microwaves) and ion cyclotron heating (8.5-12 MHz). Electron densities in excess of 1 × 1020 m-3 were produced with the helicon antenna. Electron temperatures can reach 20 eV and are typically below 6 eV at high densities (>5 × 1019 m-3). Ion heating has been demonstrated at low electron densities (<2 × 1019 m-3) with ion temperatures of up to 13 eV. Maximum heat fluxes of 14 MW/m2 have been obtained in low density discharges (~5 × 1018 m-3), while heat fluxes are typically only 2–3 MW/m2 in high density discharges (>2 × 1019 m-3).

Rapp, Juergen↗
DOE OSTI2014

Spectroradiometer Intercomparison and Impact on Characterizing Photovoltaic Device Performance: Preprint

Indoor and outdoor testing of photovoltaic (PV) device performance requires the use of solar simulators and natural solar radiation, respectively. This performance characterization requires accurate knowledge of spectral irradiance distribution that is incident on the devices. Spectroradiometers are used to measure the spectral distribution of solar simulators and solar radiation. On September 17, 2013, a global spectral irradiance intercomparison using spectroradiometers was organized by the Solar Radiation Research Laboratory (SRRL) at the National Renewable Energy Laboratory (NREL). This paper presents highlights of the results of this first intercomparison, which will help to decrease systematic inter-laboratory differences in the measurements of the outputs or efficiencies of PV devices and harmonize laboratory experimental procedures.

14 SOLAR ENERGY↗
DOE OSTI2016

Final report of Sandia National Laboratories (SNL) contribution to IAEA CRP F11016 on ''Utilization of ion accelerators for studying and modeling of radiation induced defects in semiconductors and insulator''

This is the final report of Sandia National Laboratories’ activities within the International Atomic Energy Agency (IAEA) Collaboration Research Project (CRP) F11016. The goal of this CRP is to study the effects of radiation on semiconductors and insulators with the emphasis on the effect of displacement damage due to MeV energy ions on the performance of semiconductor detectors and microelectronic devices. The devices used in this study were received from the university of Helsinki, but some other commercial diodes from Hamatsu were investigated, too. SNL’s role in the project was to perform irradiation, C-­V and Ion Beam Induced Charge (IBIC) measurements on the devices. In addition we performed Binary Collision Approximation (BCA) calculations to estimate the ionization and damage of the ions used in the experiment by the members of the CRP and created a TCAD model of the irradiation of the devices.

38 RADIATION CHEMISTRY, RADIOCHEMISTRY, AND NUCLEA↗
DOE OSTI2015

Spectroscopic properties and radiation damage investigation of a diamond based Schottky diode for ion-beam therapy microdosimetry

In this work, a detailed analysis of the properties of a novel microdosimeter based on a synthetic single crystal diamond is reported. Focused ion microbeams were used to investigate the device spectropscopic properties as well as the induced radiation damage effects. A diamond based Schottky diode was fabricated by chemical vapor deposition with a very thin detecting region, about 400 nm thick (approximately 1.4 μm water equivalent thickness), corresponding to the typical size in microdosimetric measurements. A 200 × 200 μm{sup 2} square metallic contact was patterned on the diamond surface by standard photolithography to define the sensitive area. Experimental measurements were carried out at the Ruder Boškovic′ Institute microbeam facility using 4 MeV carbon and 5 MeV silicon ions. Ion beam induced charge maps were employed to characterize the microdosimeter response in terms of its charge collection properties. A stable response with no evidence of polarization or memory effects was observed up to the maximum investigated ion beam flux of about 1.7 × 10{sup 9} ions·cm{sup −2}·s{sup −1}. A homogeneity of the response about 6% was found over the sensitive region with a well-defined confinement of the response within the active area. Tests of the radiation damage effect were performed by selectively irradiating small areas of the device with different ion fluences, up to about 10{sup 12} ions/cm{sup 2}. An exponential decrease of the charge collection efficiency was observed with a characteristic decay constant of about 4.8 MGy and 1 MGy for C and Si ions, respectively. The experimental data were analyzed by means of GEANT4 Monte Carlo simulations. A direct correlation between the diamond damaging effect and the Non Ionizing Energy Loss (NIEL) fraction was found. In particular, an exponential decay of the charge collection efficiency with an exponential decay as a function of NIEL is observed, with a characteristic constant of about 9.3 kGy-NIEL for both carbon and silicon ions.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
NASA NTRS1984

Electron trapping in rad-hard RCA IC's irradiated with electrons and gamma rays

Enhanced electron trapping has been observed in n-channels of rad-hard CMOS devices due to electron and gamma-ray irradiation. Room-temperature annealing results in a positive shift in the threshold potential far beyond its initial value. The slope of the annealing curve immediately after irradiation was found to depend strongly on the gate bias applied during irradiation. Some dependence was also observed on the electron dose rate. No clear dependence on energy and shielding over a delidded device was observed. The threshold shift is probably due to electron trapping at the radiation-induced interface states and tunneling of electrons through the oxide-silicon energy barrier to fill the radiation-induced electron traps. A mathematical analysis, based on two parallel annealing kinetics, hole annealing and electron trapping, is applied to the data for various electron dose rates.

Danchenko, V.↗
DOE OSTI2015

The impact of defect scattering on the quasi-ballistic transport of nanoscale conductors

Using the Landauer approach for carrier transport, we analyze the impact of defects induced by ion irradiation on the transport properties of nanoscale conductors that operate in the quasi-ballistic regime. Degradation of conductance results from a reduction of carrier mean free path due to the introduction of defects in the conducting channel. We incorporate scattering mechanisms from radiation-induced defects into calculations of the transmission coefficient and present a technique for extracting modeling parameters from near-equilibrium transport measurements. These parameters are used to describe degradation in the transport properties of nanoscale devices using a formalism that is valid under quasi-ballistic operation. The analysis includes the effects of bandstructure and dimensionality on the impact of defect scattering and discusses transport properties of nanoscale devices from the diffusive to the ballistic limit. We compare calculations with recently published measurements of irradiated nanoscale devices such as single-walled carbon nanotubes, graphene, and deep-submicron Si metal-oxide-semiconductor field-effect transistors.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Proton irradiation effects on the thermoelectric properties in single-crystalline Bi nanowires

The effects of proton irradiation on the thermoelectric properties of Bi nanowires (Bi-NWs) were investigated. Single crystalline Bi-NWs were grown by the on-film formation of nanowires method. The devices based on individual Bi-NWs were irradiated with protons at different energies. The total number of displaced atoms was estimated using the Kinchin-Pease displacement model. The electric conductivity and Seebeck coefficient in the Bi-NW devices were investigated before and after proton irradiation at different temperatures. Although the Seebeck coefficient remained stable at various irradiation energies, the electrical conductivity significantly declined with increasing proton energy up to 40 MeV.

36 MATERIALS SCIENCE↗