Collisionally induced photoabsorption by the H/-/ ion
Charged particle interaction influence on photoionization cross section of negative hydrogen ion, considering initial state polarization leading to free s wave electron
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Charged particle interaction influence on photoionization cross section of negative hydrogen ion, considering initial state polarization leading to free s wave electron
Deleterious environmental effects on steady-state, intrinsic fatigue crack propagation (FCP) rates (da/dN) in peak aged Al-Li-Cu alloy 2090 are established by electrical potential monitoring of short cracks with programmed constant delta K and K(sub max) loading. The da/dN are equally unaffected by vacuum, purified helium, and oxygen but are accelerated in order of decreasing effectiveness by aqueous 1 percent NaCl with anodic polarization, pure water vapor, moist air, and NaCl with cathodic polarization. While da/dN depends on delta K(sup 4.0) for the inert gases, water vapor and chloride induced multiple power-laws, and a transition growth rate 'plateau'. Environmental effects are strongest at low delta K. Crack tip damage is ascribed to hydrogen embrittlement because of the following: (1) accelerated da/dN due to part-per-million levels of H2O without condensation; (2) impeded molecular flow model predictions of the measured water vapor pressure dependence of da/dN as affected by mean crack opening; (3) the lack of an effect of film-forming O2; (4) the likelihood for crack tip hydrogen production in NaCl, and (5) the environmental and delta K-process zone volume dependencies of the microscopic cracking modes. For NaCl, growth rates decrease with decreasing loading frequency, with the addition of passivating Li2CO3, and upon cathodic polarization. These variables increase crack surface film stability to reduce hydrogen entry efficiency. The hydrogen environmental FCP resistance of 2090 is similar to other 2000 series alloys and is better than 7075.
Deleterious environmental effects on steady-state, intrinsic fatigue crack propagation (FCP) rates (da/dN) in peak aged Al-Li-Cu alloy 2090 are established by electrical potential monitoring of short cracks with programmed constant delta K and K(sub max) loading. The da/dN are equally unaffected by vacuum, purified helium, and oxygen but are accelerated in order of decreasing effectiveness of aqueous 1 percent NaCl with anodic polarization, pure water vapor, moist air, and NaCl with cathodic polarization. While da/dN depends on delta K(sup 4.0) for the inert gases, water vapor and chloride induced multiple power-laws, and a transition growth rate 'plateau'. Environmental effects are strongest at low delta K. Crack tip damage is ascribed to hydrogen embrittlement because of the following: (1) accelerated da/dN due to part-per-million levels of H2O without condensation; (2) impeded molecular flow model predictions of the measured water vapor pressure dependence of da/dN as affected by mean crack opening; (3) the lack of an effect of film-forming O2; (4) the likelihood for crack tip hydrogen production in NaCl; and (5) the environmental and delta K-process zone volume dependencies of the microscopic cracking modes. For NaCl, growth rates decrease with decreasing loading frequency, with the addition of passivating Li2CO3, and upon cathodic polarization. These variables increase crack surface film stability to reduce hydrogen entry efficiency. The hydrogen environmental FCP resistance of 2090 is similar to other 2000 series alloys and is better than 7075.
Cation impurity induced optical fluorescence in antiferromagnetic manganese difluoride at low temperatures, identifying fluorescence exciton lines by polarization and Zeeman experiments
D- and L-Leucine have been subjected to 39-55 percent radiolysis using 0.11 MeV protons, both with the proton beam passing through the sample or being absorbed by it and with quenching the sample immediately on completion of irradiation or after a 21-day interval. Racemization was small (1.1-1.7 percent) and comparable in all cases, suggesting that radioracemization and secondary degradative effects were not important factors in the recent unsuccessful attempts to induce optical activity in DL-Leucine by partial radiolysis using 0-11 MeV longitudinally polarized protons.
Partially exposed polymer dispersed liquid crystal thin film (10-25 microns) deposited on a flat glass substrate has been used for the first time to measure skin friction. Utilizing the shear-stress-induced director reorientation in the partially exposed liquid-crystal droplets, optical transmission under crossed polarization has been measured as a function of the air flow differential pressure. Direct measurement of the skin friction with a skin friction drag balance, under the same aerodynamic conditions, lets us correlate the skin friction with optical transmission. This provides a unique technique for the direct measurement of skin friction from the transmitted light intensity. The results are in excellent agreement with the model suggested in this paper.
Non-volatile memory devices with two stacked layers of chalcogenide materials comprising the active memory device have been investigated for their potential as phase change memories. The devices tested included GeTe/SnTe, Ge.sub.2Se.sub.3/SnTe, and Ge.sub.2Se.sub.3/SnSe stacks. All devices exhibited resistance switching behavior. The polarity of the applied voltage with respect to the SnTe or SnSe layer was critical to the memory switching properties, due to the electric field induced movement of either Sn or Te into the Ge-chalcogenide layer. One embodiment of the invention is a device comprising a stack of chalcogenide-containing layers which exhibit phase change switching only after a reverse polarity voltage potential is applied across the stack causing ion movement into an adjacent layer and thus "activating" the device to act as a phase change random access memory device or a reconfigurable electronics device when the applied voltage potential is returned to the normal polarity. Another embodiment of the invention is a device that is capable of exhibiting more that two data states.
Non-volatile memory devices with two stacked layers of chalcogenide materials comprising the active memory device have been investigated for their potential as phase-change memories. The devices tested included GeTe/SnTe, Ge.sub.2Se.sub.3/SnTe, and Ge.sub.2Se.sub.3/SnSe stacks. All devices exhibited resistance switching behavior. The polarity of the applied voltage with respect to the SnTe or SnSe layer was critical to the memory switching properties, due to the electric field induced movement of either Sn or Te into the Ge-chalcogenide layer. One embodiment of the invention is a device comprising a stack of chalcogenide-containing layers which exhibit phase-change switching only after a reverse polarity voltage potential is applied across the stack causing ion movement into an adjacent layer and thus "activating" the device to act as a phase-change random access memory device or a reconfigurable electronics device when the applied voltage potential is returned to the normal polarity. Another embodiment of the invention is a device that is capable of exhibiting more than two data states.
Non-volatile memory devices with two stacked layers of chalcogenide materials comprising the active memory device have been investigated for their potential as phase-change memories. The devices tested included GeTe/SnTe, Ge2Se3/SnTe, and Ge2Se3/SnSe stacks. All devices exhibited resistance switching behavior. The polarity of the applied voltage with respect to the SnTe or SnSe layer was critical to the memory switching properties, due to the electric field induced movement of either Sn or Te into the Ge-chalcogenide layer. One embodiment of the invention is a device comprising a stack of chalcogenide-containing layers which exhibit phase-change switching only after a reverse polarity voltage potential is applied across the stack causing ion movement into an adjacent layer and thus "activating" the device to act as a phase-change random access memory device or a reconfigurable electronics device when the applied voltage potential is returned to the normal polarity. Another embodiment of the invention is a device that is capable of exhibiting more than two data states.
The kinetic energy of the Earth's rotation can be separated into two parts: the spin energy and the polar motion energy.
It is noted that slab-geometry solid-state lasers potentially provide significant performance improvements relative to conventional rod-geometry lasers. Experimental measurements that use an Nd:glass test-bed slab laser are presented. A comparison is made between the results and computer-model predictions of the slab-geometry approach. The computer model calculates and displays the temperature and stress fields in the slab, and on the basis of these predicts birefringence and index-of-refraction distributions. The effect that these distributions have on optical propagation is determined in a polarization-sensitive ray-tracing section of the model. Calculations are also made of stress-induced surface curvature and the resulting focusing effects. The measurements are found to be in good agreement with the computer-model predictions. It is concluded that the slab configuration offers significant laser-performance advantages in comparison with the traditional rod-laser geometry.
It is proposed that a new versatile ionospheric and atmospheric scatter radar be constructed in northern Scandavia through a multinational collaborative effort. The new facility tentatively named HISCAT (High frequency, High power, High latitude, Heating and Ionospheric Scatter facility), should be used for scientific investigations of: the physics of the neutral (middle) atmosphere; fundamental plasma phenomena, natural or artificially induced in the ionosphere; electrodynamic conditions at high altitudes above the auroral region and in the polar cap ionosphere; plasma waves in the solar atmosphere. The system should thus be able to operate as a mesosphere-stratosphere-troposphere (MST) radar, a so-called ionospheric modification facility, incoherent-scatter radar, coherent-scatter radar, and solar radar. Basically, the new facility should be a device that can operate simultaneously on several frequencies in the frequency range 5 to 50 MHz not covered by other instruments. It should comprise: powerful transmitters, capable of delivering a total average power of several megawatts; an advanced phased antenna array of high gain forming one or two steerable and well collimated beams; and an advanced data collection and analysis system.
This paper describes an application of the method of moments to determine resonant frequencies of irregularly shaped microstrip patches embedded in a grounded dielectric slab. For analysis, the microstrip patch is assumed to be excited by a linearly polarized plane wave that is normal to the patch. The surface-current density that is induced on the patch because of the incident field is expressed in terms of subdomain functions by dividing the patch into identical rectangular subdomains. The amplitudes of the subdomain functions, as a function of frequency, are determined using the electric-field integral equation (EFIE) approach in conjunction with the method of moments. The resonant frequencies of the patch are then obtained by selecting the frequency at which the amplitude of the surface-current density is real. The resonant frequencies of the equilateral triangular and other nonrectangular patches are computed using the present technique, and these frequencies are compared with measurements and other independent calculations.
BEMTs formed from Al(x)Ga(1-x)N/GaN heterostructures are being investigated for high RF power and efficiency around the world by many groups, both academic and industrial. In these devices, the 2DEG formation is dominated by both spontaneous and piezoelectric polarization fields, with each component having nearly the same order of magnitude. The piezoelectric portion is induced by the mechanical strain in the structure, and to analyze these devices, one must incorporate the stress/strain relationships, along with the standard semiconductor transport equations. These equations for Wurtzite GaN are not easily found in the open literature, hence this paper summarizes them, along with the constitutive equations for piezoelectric materials. The equations are cast into the format for the Wurtzite crystal class, which is the most common way GaN is grown epitaxially.
An analysis is presented of a sudden stratospheric warming event which occurred spontaneously during a general circulation model simulation of the global atmospheric circulation. Two separate warming pulses exhibit the same dynamical evolution with a 'cycle' of about two weeks. Two distinct phases of the warming cycle are apparent: (1) the generation of an intense localized warm cell in conjunction with significant adiabatic heating associated with cross-isobar flow which has been induced by vertically propagating long wave disturbances; and (2) the northward transport of that warm cell via advection by the essentially geostrophic windfield corresponding to an intense, offset polar cyclone, in conjunction with a strong Aleutian anticyclone. During the first warming pulse in January, a moderate Aleutian anticyclone was in place prior to the warming cycle and was intensified by interaction with an eastward traveling anticyclone induced by the differential advection of the warm cell. The second warming pulse occurred in early February with a strong Aleutian anticyclone already established. In contrast to the January event, the warming in February culminated with reversal of the zonal westerlies to easterlies over a significant depth of the stratosphere.
Two new techniques have been developed to characterize Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT) based ferroelectric single crystals: (i) electro-thermal imaging, and (ii) single crystal x-ray diffraction in the transmission mode. (i) Electro-thermal imaging is a remote sensing technique that can detect the polarization direction and poling state of a whole crystal slice. This imaging technique utilizes an IR camera to determine the field induced temperature change and does not require any special or destructive sample preparation. In the resulting images it is possible to distinguish regions of 180 deg domains. This powerful technique can be used remotely during poling to determine the poling state of the crystal to avoid over-poling that can result in inferior properties and/or cracking of the crystals. Electro-thermal imaging produced the first direct observations of polarization rotation. Under bipolar field, the domains near the corners were the first to switch direction. As the field increased above the coercive field, domains at the center part of the crystals switched direction. (ii) X-ray diffraction in the transmission mode has long been used in structure determination of organic crystals and proteins; however, it is not used much to characterize inorganic systems. 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 single crystals were examined by this XRD technique for the first time, and a never-before-seen super-lattice was revealed with a doubling of the unit cell in all three directions, giving a cell volume eight times that of a traditional perovskite unit cell. The significance of the super-lattice peaks increased with poling, indicating a structural contribution to ordering. Lack of such observations by electron diffraction in the transmission electron microscope examinations suggests the presence of a bulk effect.
While high shear alignment has been shown to improve the mechanical properties of single wall carbon nanotubes (SWNT)-polymer composites, it is difficult to control and often results in degradation of the electrical and dielectric properties of the composite. Here, we report a novel method to actively align SWNTs in a polymer matrix, which allows for control over the degree of alignment of SWNTs without the side effects of shear alignment. In this process, SWNTs are aligned via field-induced dipolar interactions among the nanotubes under an AC electric field in a liquid matrix followed by immobilization by photopolymerization while maintaining the electric field. Alignment of SWNTs was controlled as a function of magnitude, frequency, and application time of the applied electric field. The degree of SWNT alignment was assessed using optical microscopy and polarized Raman spectroscopy and the morphology of the aligned nanocomposites was investigated by high resolution scanning electron microscopy. The structure of the field induced aligned SWNTs is intrinsically different from that of shear aligned SWNTs. In the present work, SWNTs are not only aligned along the field, but also migrate laterally to form thick, aligned SWNT percolative columns between the electrodes. The actively aligned SWNTs amplify the electrical and dielectric properties in addition to improving the mechanical properties of the composite. All of these properties of the aligned nanocomposites exhibited anisotropic characteristics, which were controllable by tuning the applied field conditions.
Ionospheric scintillation can significantly degrade the performance and the usability of space‐based communication and navigation signals. Characterization and prediction of ionospheric scintillation can be made from the Global Navigation Satellite System (GNSS) radio occultation (RO) technique using the measurement from a deep slant path where the RO tangent height (ht) is far below the ionospheric sources. In this study, the L–band S4 from the RO measurements at ht = 30 km is used to infer the amplitude scintillation on the ground. The analysis of global RO data at ht = 30 km shows that sporadic–E (Es), equatorial plasma bubbles (EPBs), and equatorial spread–F (ESF) produce most of the significant S4 enhancements, although the polar S4 is generally weak. The enhanced S4 is a strong function of local time and magnetic dip angle. The Es–induced daytime S4 tends to have a negative correlation with the solar cycle at low latitudes but a positive correlation at high latitudes. The nighttime S4 is dominated by a strong semiannual variation at low latitudes.