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DOE OSTI2024

Parasitic conduction loss of lithium niobate on insulator platform

Thin-film lithium niobate on insulator (LNOI) has recently emerged as an exciting platform for nonlinear integrated photonic devices, drawing parallels with the impact of silicon on insulator (SOI) in the electronic device realm. While the influence of interfacial states of SOI on electronic device performance, particularly their contribution to parasitic radio frequency (RF) losses, is well-documented, this aspect remains relatively unexplored in LNOI, despite their shared silicon/oxide interface structure. Here, we investigate the RF loss arising from mobile charges at the silicon/oxide interface of the LNOI platform. We show that this parasitic conduction can be exacerbated, especially during plasma etching, and leads to substantial RF losses. Through strategic incorporation of a trap-rich poly-silicon layer at this interface, we effectively eliminate this parasitic conduction, resulting in the suppression of RF losses. This work establishes crucial guidelines for harnessing LNOI in applications such as high-frequency electro-mechanical devices, high-speed electro-optic modulators, and high-efficiency microwave-to-optics converters.

Physics↗

DOE OSTI2024

Fault localization in a microfabricated surface ion trap using diamond nitrogen-vacancy center magnetometry

Here, as quantum computing hardware becomes more complex with ongoing design innovations and growing capabilities, the quantum computing community needs increasingly powerful techniques for fabrication failure root-cause analysis. This is especially true for trapped-ion quantum computing. As trapped-ion quantum computing aims to scale to thousands of ions, the electrode numbers are growing to several hundred, with likely integrated photonic components also adding to the electrical and fabrication complexity, making faults even harder to locate. In this work, we used a high-resolution quantum magnetic imaging technique, based on nitrogen-vacancy centers in diamond, to investigate short-circuit faults in an ion trap chip. We imaged currents from these short-circuit faults to ground and compared them to intentionally created faults, finding that the root cause of the faults was failures in the on-chip trench capacitors. This work, where we exploited the performance advantages of a quantum magnetic sensing technique to troubleshoot a piece of quantum computing hardware, is a unique example of the evolving synergy between emerging quantum technologies to achieve capabilities that were previously inaccessible.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2020

Design and performance of a 35-ton liquid argon time projection chamber as a prototype for future very large detectors

Liquid argon time projection chamber technology is an attractive choice for large neutrino detectors, as it provides a high-resolution active target and it is expected to be scalable to very large masses. Consequently, it has been chosen as the technology for the first module of the DUNE far detector. However, the fiducial mass required for “far detectors” of the next generation of neutrino oscillation experiments far exceeds what has been demonstrated so far. Scaling to this larger mass, as well as the requirement for underground construction places a number of additional constraints on the design. A prototype 35-ton cryostat was built at Fermi National Acccelerator Laboratory to test the functionality of the components foreseen to be used in a very large far detector. The Phase I run, completed in early 2014, demonstrated that liquid argon could be maintained at sufficient purity in a membrane cryostat. A time projection chamber was installed for the Phase II run, which collected data in February and March of 2016. The Phase II run was a test of the modular anode plane assemblies with wrapped wires, cold readout electronics, and integrated photon detection systems. While the details of the design do not match exactly those chosen for the DUNE far detector, the 35-ton TPC prototype is a demonstration of the functionality of the basic components. Measurements are performed using the Phase II data to extract signal and noise characteristics and to align the detector components. A measurement of the electron lifetime is presented, and a novel technique for measuring a track's position based on pulse properties is described.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

DOE OSTI2020

Backscatter-Immune Injection-Locked Brillouin Laser in Silicon

As self-sustained oscillators, lasers possess the unusual ability to spontaneously synchronize. These nonlinear dynamics are the basis for a simple yet powerful stabilization technique known as injection locking, in which a laser’s frequency and phase can be controlled by an injected signal. Because of its inherent simplicity and favorable noise characteristics, injection locking has become a workhorse for coherent amplification and high-fidelity signal synthesis in applications ranging from precision atomic spectroscopy to distributed sensing. Within integrated photonics, however, these injection-locking dynamics remain relatively untapped—despite significant potential for technological and scientific impact. In this work, we demonstrate injection locking in a silicon photonic Brillouin laser. Injection locking of this monolithic device is remarkably robust, allowing us to tune the laser emission by a significant fraction of the Brillouin gain bandwidth. Harnessing these dynamics, we demonstrate amplification of small signals by more than 23 dB. Moreover, we demonstrate that the injection-locking dynamics of this system are inherently nonreciprocal, yielding unidirectional control and backscatter immunity in an all-silicon system. This device physics opens the door to strategies for phase-noise reduction, low-noise amplification, and backscatter immunity in silicon photonics.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2020

Time-resolved investigation of subnanosecond radiation from Al wire hybrid X pinches

K-shell x-ray spectra from Al wire hybrid X pinches have been studied using an x-ray streak camera with better than 0.1-ns time resolution together with a Focusing Spectrograph with Spatial Resolution (FSSR) spectrograph. High-intensity radiation with a continuumlike spectrum was observed in the subnanosecond initial phase of the x-ray pulse generated by the hybrid X pinch (HXP). Here, the absence of spectral lines in this phase and the extremely small x-ray source size indicates the importance of radiative processes in the final phase implosion dynamics. Plasma parameters in the following phases of the HXP were determined from analysis of the line intensities. Point-projection radiography together with a slit-step wedge camera and an FSSR spectrograph without time resolution were used to show the number of radiation sources, and to give information on the time-integrated photon energy spectrum.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

DOE OSTI2025

Photonics Breakthroughs 2024: Narrow-Linewidth Lasers in the Visible and Near-Infrared

Narrow-linewidth lasers enable a variety of high-precision applications, such as sensing, optical clocks, and microwave frequency generation. Advances in photonic integration in the last decade led to the development of ultra-low-noise integrated semiconductor lasers, mostly in the telecom wavelength range. In recent years, the demand for high-performance lasers at shorter wavelengths skyrocketed, driven by applications in sensing and atom trapping. Low-noise lasers are of particular importance in this spectral range, as they are essential for optical clocks. Here, we will review recent progress in narrow-linewidth lasers at shorter wavelengths, present results on a hybrid-integrated low-noise laser at 780 nm and discuss the perspectives and challenges of high-performance semiconductor lasers in the visible and near-infrared.

Prokoshin, Artem [King Abdullah University of Scie↗

DOE OSTI2023

Modelling integrated quantum frequency processors towards robust quantum networks

Frequency-encoded quantum information offers intriguing opportunities for quantum communications networks, with the quantum frequency processor (QFP) paradigm promising scalable construction of quantum gates. Yet all experimental demonstrations to date have relied on discrete fiber-optic components that occupy significant physical space and impart appreciable loss. We introduce a model for designing QFPs comprising microring resonator-based pulse shapers and integrated phase modulators. We estimate the performance of frequency-bin Hadamard gates, finding high fidelity values sustained for relatively wide-bandwidth frequency bins. Our simple model and can be extended to other material platforms, providing a design tool for future frequency processors in integrated photonics.

Nussbaum, Benjamin↗

DOE OSTI2024

Toward quantum networking with frequency-bin qudits

Quantum networking holds tremendous promise in transforming computation and communication. Entangled-photon sources are critical for quantum repeaters and networking, while photonic integrated circuits are vital for miniaturization and scalability. In this talk, we focus on generating and manipulating frequency-bin entangled states within integrated platforms. We encode quantum information as a coherent superposition of multiple optical frequencies; this approach is favorable due to its amenability to high-dimensional entanglement and compatibility with fiber transmission. We successfully generate and measure the density matrix of biphoton frequency combs from integrated silicon nitride microrings, fully reconstructing the state in an 8 × 8 two-qudit Hilbert space, the highest so far for frequency bins. Moreover, we employ Vernier electro-optic phase modulation methods to perform time-resolved measurements of biphoton correlation functions. Currently, we are exploring bidirectional pumping of microrings to generate indistinguishable entangled pairs in both directions, aiming to demonstrate key networking operations such as entanglement swapping and Greenberger–Horne–Zeilinger state generation in the frequency domain.

Myilswamy, Karthik V.↗

DOE OSTI2020

Real-time dynamic wavelength tuning and intensity modulation of metal-clad nanolasers

To realize ubiquitously used photonic integrated circuits, on-chip nanoscale sources are essential components. Subwavelength nanolasers, especially those based on a metal-clad design, already possess many desirable attributes for an on-chip source such as low thresholds, room-temperature operation and ultra-small footprints accompanied by electromagnetic isolation at pitch sizes down to ∼50 nm. Another valuable characteristic for a source would be control over its emission wavelength and intensity in real-time. Most efforts on tuning/modulation thus far report static changes based on irreversible techniques not suited for high-speed operation. In this study, we demonstrate in-situ dynamical tuning of the emission wavelength of a metallo-dielectric nanolaser at room temperature by applying an external DC electric field. Using an AC electric field, we show that it is also possible to modulate the output intensity of the nanolaser at high speeds. The nanolaser’s emission wavelength in the telecom band can be altered by as much as 8.35 nm with a tuning sensitivity of ∼1.01 nm/V. Additionally, the output intensity can be attenuated by up to 89%, a contrast sufficient for digital data communication purposes. Finally, we achieve an intensity modulation speed up to 400 MHz, limited only by the photodetector bandwidth used in this study, which underlines the capability of high-speed operation via this method. This is the first demonstration of a telecom band nanolaser source with dynamic spectral tuning and intensity modulation based on an external E-field to the best of our knowledge.

Deka, Suruj S. (ORCID:0000000297812317)↗

DOE OSTI2022

Side-lobe reduction by cascading Bragg grating filters on a Si-photonic chip

Bragg-grating based cavities and coupler designs present opportunities for flexible allocation of bandwidth and spectrum in silicon photonic devices. Integrated silicon photonic devices are moving toward mainstream, mass adoption, leading to the need for compact Bragg grating based designs. In this work we present a design and experimental validation of a cascaded contra-directional Bragg-grating coupler with a measured main lobe to side-lobe contrast of 12.93 dB. This level of performance is achieved in a more compact size as compared to conventional apodized gratings, and a similar design philosophy can be used to improve side-lobe reduction in grating-based mirror design for on-chip lasers and other cavity-based designs as well.

42 ENGINEERING↗

DOE OSTI2022

Silicon nitride stress-optic microresonator modulator for optical control applications

Modulation-based control and locking of lasers, filters and other photonic components is a ubiquitous function across many applications that span the visible to infrared (IR), including atomic, molecular and optical (AMO), quantum sciences, fiber communications, metrology, and microwave photonics. Today, modulators used to realize these control functions consist of high-power bulk-optic components for tuning, sideband modulation, and phase and frequency shifting, while providing low optical insertion loss and operation from DC to 10s of MHz. In order to reduce the size, weight and cost of these applications and improve their scalability and reliability, modulation control functions need to be implemented in a low loss, wafer-scale CMOS-compatible photonic integration platform. The silicon nitride integration platform has been successful at realizing extremely low waveguide losses across the visible to infrared and components including high performance lasers, filters, resonators, stabilization cavities, and optical frequency combs. Yet, progress towards implementing low loss, low power modulators in the silicon nitride platform, while maintaining wafer-scale process compatibility has been limited. Here we report a significant advance in integration of a piezo-electric (PZT, lead zirconate titanate) actuated micro-ring modulation in a fully-planar, wafer-scale silicon nitride platform, that maintains low optical loss (0.03 dB/cm in a 625 µm resonator) at 1550 nm, with an order of magnitude increase in bandwidth (DC - 15 MHz 3-dB and DC - 25 MHz 6-dB) and order of magnitude lower power consumption of 20 nW improvement over prior PZT modulators. The modulator provides a >14 dB extinction ratio (ER) and 7.1 million quality-factor (Q) over the entire 4 GHz tuning range, a tuning efficiency of 162 MHz/V, and delivers the linearity required for control applications with 65.1 dB·Hz 2/3 and 73.8 dB·Hz 2/3 third-order intermodulation distortion (IMD3) spurious free dynamic range (SFDR) at 1 MHz and 10 MHz respectively. We demonstrate two control applications, laser stabilization in a Pound-Drever Hall (PDH) lock loop, reducing laser frequency noise by 40 dB, and as a laser carrier tracking filter. This PZT modulator design can be extended to the visible in the ultra-low loss silicon nitride platform with minor waveguide design changes. This integration of PZT modulation in the ultra-low loss silicon nitride waveguide platform enables modulator control functions in a wide range of visible to IR applications such as atomic and molecular transition locking for cooling, trapping and probing, controllable optical frequency combs, low-power external cavity tunable lasers, quantum computers, sensors and communications, atomic clocks, and tunable ultra-low linewidth lasers and ultra-low phase noise microwave synthesizers.

Wang, Jiawei (ORCID:0000000257965220)↗

DOE OSTI2020

Mid-infrared frequency doubling using strip-loaded silicon nitride on epitaxial barium titanate thin film waveguides

Broadband mid-infrared (mid-IR) frequency doubling was demonstrated using nonlinear barium titanate (BTO) thin films. The device has a strip-loaded waveguide structure consisting of top silicon nitride (SiN) strips and an underneath BTO guiding layer. The epitaxial BTO was deposited on a strontium titanate (STO) substrate by pulsed-laser deposition. Through a SiN grating coupler, the pumping mid-IR light at wavelength λ = 3.30 − 3.45 µ m was coupled into the nonlinear BTO layer, where the spectrum of the near-infrared (NIR) second-harmonic generation was characterized. The developed BTO waveguides provide a platform for mid-IR nonlinear integrated photonics and on-chip quantum optics.

42 ENGINEERING↗

DOE OSTI2022

Ultra-broadband quadrature squeezing with thin-film lithium niobate nanophotonics

Squeezed light is a key quantum resource that enables quantum advantages for sensing, networking, and computing applications. The scalable generation and manipulation of squeezed light with integrated platforms are highly desired for the development of quantum technology with continuous variables. In this Letter, we demonstrate squeezed light generation with thin-film lithium niobate integrated photonics. Parametric down-conversion is realized with quasi-phase matching using ferroelectric domain engineering. With sub-wavelength mode confinement, efficient nonlinear processes can be observed with single-pass configuration. We measure 0.56 ± 0.09 dB quadrature squeezing (∼2.6 dB inferred on-chip). The single-pass configuration further enables the generation of squeezed light with large spectral bandwidth up to 7 THz. This work represents a significant step towards the on-chip implementation of continuous-variable quantum information processing.

Chen, Pao-Kang↗

DOE OSTI2023

Enhancement of second-order optical nonlinearities and nanoscale periodic domain patterning in ferroelectric boron-substituted aluminum nitride thin films

The discovery and development of CMOS-compatible, nonlinear optical materials is essential to produce integrated photonic devices with advanced functionalities. AlN is a strong candidate for on-chip device demonstration due to its intrinsic second-order optical nonlinearities, large bandgap, and well-established fabrication techniques. However, AlN is not easily phase matched for the largest coefficient d 33 ; the coefficients that could potentially be dispersion phase-matched, d 31 and d 15 , have weak nonlinearities. This work investigates ferroelectric Al 1-x B x N (x = 0 to 0.11) for viability as a large bandgap nonlinear optical material with unique suitability towards ultraviolet light generation using second harmonic generation. The linear and nonlinear optical properties are characterized accounting for material anisotropy. With increasing B concentration, a large enhancement from near negligible values to d 31 = 0.9 ± 0.1 pm/V and d 15 = 1.2 ± 0.1 pm/V is observed. This compares favorably to other large bandgap materials like β-Ba(BO 2 ) 2 , where the largest nonlinear coefficient is d 22 ~ 2.3 pm/V at 800 nm. This is accompanied by a change in the bandgap from 6.1 eV to 5.8 eV as B substitution goes from 0 to 11%. A periodically poled, quasi-phase-matched ferroelectric domain pattern with 400 nm domain size and a wall roughness of <16 nm is demonstrated.

36 MATERIALS SCIENCE↗

DOE OSTI2020

Near-octave lithium niobate soliton microcomb

Thin film lithium niobate (LN) is bringing renewed potential to the realm of integrated photonics. Its strong quadratic and cubic nonlinearities as well as wide transparency window are ideal for realizing on-chip self-referenced soliton microcombs. However, broadband Kerr cavity soliton generation in LN thin films remains challenging due to limited dispersion control and competition from strong stimulated Raman scattering (SRS). Here, we demonstrate the generation of soliton microcombs in LN thin films featuring broad spectral spans up to 4/5 octaves with the emission of dual dispersion waves (2/3 octaves apart) and sub-terahertz repetition rates (down to 335 GHz) by suppressing strong SRS. Numerical simulations based on coupled-mode equations that incorporate Raman effects further elucidate the soliton dynamics in this highly Raman-active material system.

Gong, Zheng (ORCID:0000000301704870)↗

DOE OSTI2021

Ultralow-threshold thin-film lithium niobate optical parametric oscillator

Materials with strong second-order ( χ <#comment/> ( 2 ) ) optical nonlinearity, especially lithium niobate, play a critical role in building optical parametric oscillators (OPOs). However, chip-scale integration of low-loss χ <#comment/> ( 2 ) materials remains challenging and limits the threshold power of on-chip χ <#comment/> ( 2 ) OPO. Here we report an on-chip lithium niobate optical parametric oscillator at the telecom wavelengths using a quasi-phase-matched, high-quality microring resonator, whose threshold power ( ∼ <#comment/> 30 µ <#comment/> W ) is 400 times lower than that in previous χ <#comment/> ( 2 ) integrated photonics platforms. An on-chip power conversion efficiency of 11% is obtained from pump to signal and idler fields at a pump power of 93 µW. The OPO wavelength tuning is achieved by varying the pump frequency and chip temperature. With the lowest power threshold among all on-chip OPOs demonstrated so far, as well as advantages including high conversion efficiency, flexibility in quasi-phase-matching, and device scalability, the thin-film lithium niobate OPO opens new opportunities for chip-based tunable classical and quantum light sources and provides a potential platform for realizing photonic neural networks.

Lu, Juanjuan (ORCID:0000000319389119)↗

DOE OSTI2023

Chip-scale frequency combs for data communications in computing systems

Recent developments in chip-based frequency-comb technology demonstrate that comb devices can be implemented in applications where photonic integration and power efficiency are required. The large number of equally spaced comb lines that are generated make combs ideal for use in communication systems, where each line can serve as an optical carrier to allow for massively parallel wavelength-division multiplexing (WDM) transmission. In this review, we summarize the developments in integrated frequency-comb technology for use as a WDM source for communication systems in data centers and high-performance computing systems. We highlight the following three approaches for chip-scale comb generation: semiconductor modelocked lasers, electro-optic combs, and Kerr frequency combs.

Okawachi, Yoshitomo (ORCID:0000000196390549)↗

DOE OSTI2024

Low loss fiber-coupled volumetric interconnects fabricated via direct laser writing

Photonic integrated circuits (PICs) are vital for high-speed data transmission. However, optical routing is limited in PICs composed of only one or a few stacked planes. Further, coupling losses must be low in deployed systems. Previously, we developed the subsurface controllable refractive index via beam exposure (SCRIBE) technique to write accurate 3D gradient refractive index (GRIN) profiles within a mesoporous silica scaffold. Here, we apply SCRIBE to fabricate low loss, broadband, polarization insensitive, fiber-coupled, single-mode volumetric interconnects that include waveguides traversing arbitrary 3D paths. By seamlessly integrating mode-matching subsurface lenses and GRIN waveguide tapers, calibrating for positional writing errors, implementing multipass exposure, automating alignment, and switching to antireflection coated fibers, we reduced the insertion loss for a fiber-PIC-fiber interconnect from 50 to 2.14 dB, or 1.47 dB, excluding the fiber array’s loss. Further, we establish an upper bound of 0.45 dB loss per coupler. We report quality factors of 27,000 and 77,000 and bending losses of 6 and 3 dB/cm for 15 and 30 µm radii microrings, respectively. We also demonstrate Bézier escalators, polarization-rotating and polarization-splitting interconnects, and a seven-channel 25 µm pitch volumetric interconnect. The SCRIBE platform presents a clear path toward realizing 3D PICs with unique functionality.

Optics↗