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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 235 records · Page 13
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Chemical, Biological, Radiological, Nuclear, and Explosives (CBRNE) Sensing XXI

This volume contains 12 sessions, 28 papers and 26 presentations on the following topics: Photonic Integrated Circuits and Plasmonic Sensing; Advancs in CBE Signature Modeling and Sensor Algorithms I; Standoff Sensing of CBRNE Hazards I; Standoff Sensing of CBRNE Hazards II; Advances in CBE Signature Modeling and Sensor Algorithms II; Biological Hazard Sensing; Chemical Hazard Sensing; Joint Session with Conferences 11390 and 11416: Spectroscopy for CBRNE Detection and Warning; Radiological and Nuclear Sensing; Explosive Material Sensing; Poster Session.

47 OTHER INSTRUMENTATION↗
DOE OSTI2025

Exceptional points in a passive strip waveguide

Abstract Exceptional points (EPs) in non‐Hermitian systems have attracted significant interest due to their unique behaviors, including novel wave propagation and radiation. While EPs have been explored in various photonic systems, their integration into standard photonic platforms can expand their applicability to broader technological domains. In this work, we propose and experimentally demonstrate EPs in an integrated photonic strip waveguide configuration, exhibiting unique deep wave penetration and uniform‐intensity radiation profiles. By introducing the second‐order grating on one side of the waveguide, forward and backward propagating modes are coupled both directly through second‐order coupling and indirectly through first‐order coupling via a radiative intermediate mode. To describe the EP behavior in a strip configuration, we introduce modified coupled‐mode equations that account for both transverse and longitudinal components. These coupled‐mode formulas reveal the formation of EPs in bandgap closure, achieved by numerically optimizing the grating’s duty cycle to manipulate the first‐ and second‐order couplings simultaneously. Experimental observations, consistent with simulations, confirm the EP behavior, with symmetric transmission spectra and constant radiation profiles at the EP wavelength, in contrast to conventional exponential decay observed at detuned wavelengths. These results demonstrate the realization of EPs in a widely applicable strip waveguide configuration, paving the way for advanced EP applications in nonlinear and ultrafast photonics, as well as advanced sensing technologies.

Materials Science↗
DOE OSTI2023

Hybrid Integration of GaP Photonic Crystal Cavities with Silicon-Vacancy Centers in Diamond by Stamp-Transfer

Optically addressable solid-state defects are emerging as some of the most promising qubit platforms for quantum networks. Maximizing photon-defect interaction by nanophotonic cavity coupling is key to network efficiency. We demonstrate fabrication of gallium phosphide 1-D photonic crystal waveguide cavities on a silicon oxide carrier and subsequent integration with implanted silicon-vacancy (SiV) centers in diamond using a stamp-transfer technique. The stamping process avoids diamond etching and allows fine-tuning of the cavities prior to integration. After transfer to diamond, we measure cavity quality factors (Q) of up to 8900 and perform resonant excitation of single SiV centers coupled to these cavities. For a cavity with a Q of 4100, we observe a 3-fold lifetime reduction on-resonance, corresponding to a maximum potential cooperativity of C = 2. In conclusion, these results indicate promise for high photon-defect interaction in a platform which avoids fabrication of the quantum defect host crystal.

Purcell enhancement↗
DOE OSTI2023

High-bandwidth density silicon photonic resonators for energy-efficient optical interconnects

The growth of artificial intelligence applications demands ever larger and more complex deep learning models, dominating today's—and tomorrow's—data center and high-performance computing systems. While traditional electronics are failing to keep pace with application demands, silicon photonic (SiPh) interconnects have emerged as a necessary technology to support these systems. SiPh-driven wavelength-division multiplexing (WDM) offers a particularly promising path toward supporting incredibly high-aggregate link bandwidth in a compact and efficient form factor. One of the basic building blocks of these integrated WDM interconnects is the SiPh resonator. Their inherent wavelength selectivity and compact footprint allow for efficient data transmission multiplexed across dozens of carrier wavelengths. Used as add-drop (AD) filters, SiPh resonators are critical to constructing integrated tunable wavelength-selective optical circuit switches as well as for demultiplexing the different carrier wavelengths toward independent wavelength-insensitive photodiodes in a dense wavelength-division multiplexing receiver. Resonators in the all-pass (AP) configuration are widespread as well, allowing for wavelength-selective modulation to drive aggregate link bandwidths far beyond the individual channel data rate. Unlike SiPh Mach–Zehnder modulators (MZM), resonant modulators can be driven using low, complementary metal-oxide-semiconductor drive voltages, allowing for tight co-integration between photonic integrated circuits, fabricated with larger process node technologies, and electronic integrated circuits, designed to exploit the advantages of the latest node. To push toward practical peta-scale interconnects, a comprehensive review of SiPh resonators is required, addressing bottlenecks and design constraints at both the architecture and device levels. We first describe the predominant integrated link architectures and identify their limits. We then discuss the device-level design considerations that can be made for both AD and AP configuration resonators to overcome the system level limits with novel resonator device designs. Analytical models and numerical simulation of resonators are validated by experimental measurement of devices fabricated in a commercial 300-mm foundry, showing a clear path toward volume manufacturing. The demonstrated resonant modulators and filters support the feasibility of increasing the aggregate bandwidth of resonator-driven SiPh interconnects into the peta-scale regime.

42 ENGINEERING↗
DOE OSTI2023

Resonant-based photonic intensity modulators integrated with fully etched thin-film lithium niobate waveguides

An apparatus such as an optical modulator includes a buried oxide layer is disposed on a substrate. A microring resonator and an optical waveguide are disposed on the buried oxide layer and within a bonded semiconductor layer. The optical waveguide is optically coupled to the microring resonator and inputs a first optical wave into the microring resonator. An oxide layer is deposited on top of the optical waveguide and the microring resonator. A set of electrodes is disposed adjacent to the microring resonator, and in response to an electrical signal, the set of electrodes modulates the first optical wave into a modulated optical wave of transverse magnetic polarization within the microring resonator and outputs the modulated optical wave to the optical waveguide.

Source record↗
DOE OSTI2024

Suspended waveguides on membrane and needle structures towards photonic atom trap integrated platforms

An atom trap integrated platform (ATIP) comprises a substrate, a membrane, and a suspended waveguide. The substrate has an opening formed therein. The membrane extends across a portion of the substrate opening. The suspended waveguide is formed on the membrane such that the suspended waveguide extends from a first edge of the substrate to a second edge. A magneto-optical trap (MOT) is formed around the suspended waveguide by emitting a plurality of cooling beams and a repump through the substrate opening. Evanescent fields are established above the suspended waveguide by coupling two trapping beams through the suspended waveguide, which trapping beams are red-detuned and blue-detuned with respect to the resonant optical transition of the atoms. By forming the MOT within the evanescent fields, an evanescent field optical trap (EFOT) is formed.

Lee, Jongmin↗
DOE OSTI2022

Efficient Source of Shaped Single Photons Based on an Integrated Diamond Nanophotonic System

An efficient, scalable source of shaped single photons that can be directly integrated with optical fiber networks and quantum memories is at the heart of many protocols in quantum information science. We demonstrate a deterministic source of arbitrarily temporally shaped single-photon pulses with high efficiency [detection efficiency = 14.9 %] and purity [g (2) (0) = 0.0168] and streams of up to 11 consecutively detected single photons using a silicon-vacancy center in a highly directional fiber-integrated diamond nanophotonic cavity. Finally, combined with previously demonstrated spin-photon entangling gates, this system enables on-demand generation of streams of correlated photons such as cluster states and could be used as a resource for robust transmission and processing of quantum information.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2023

Prospects and applications of on-chip lasers

Abstract Integrated silicon photonics has sparked a significant ramp-up of investment in both academia and industry as a scalable, power-efficient, and eco-friendly solution. At the heart of this platform is the light source, which in itself, has been the focus of research and development extensively. This paper sheds light and conveys our perspective on the current state-of-the-art in different aspects of application-driven on-chip silicon lasers. We tackle this from two perspectives: device-level and system-wide points of view. In the former, the different routes taken in integrating on-chip lasers are explored from different material systems to the chosen integration methodologies. Then, the discussion focus is shifted towards system-wide applications that show great prospects in incorporating photonic integrated circuits (PIC) with on-chip lasers and active devices, namely, optical communications and interconnects, optical phased array-based LiDAR, sensors for chemical and biological analysis, integrated quantum technologies, and finally, optical computing. By leveraging the myriad inherent attractive features of integrated silicon photonics, this paper aims to inspire further development in incorporating PICs with on-chip lasers in, but not limited to, these applications for substantial performance gains, green solutions, and mass production.

Zhou, Zhican↗
DOE OSTI2020

Lithium-niobate-on-insulator waveguide-integrated superconducting nanowire single-photon detectors

Here, we demonstrate waveguide-integrated superconducting nanowire single-photon detectors on thin-film lithium niobate (LiNbO 3 , LN). Using a 250 μm-long NbN superconducting nanowire lithographically defined on top of a 125 μm-long LN nanowaveguide, an on-chip detection efficiency of 46% is realized with simultaneous high performance in dark count rates and timing jitter. As LN possesses high χ (2) second-order nonlinear and electro-optic properties, an efficient single-photon detector on thin-film LN opens up the possibility to construct a small-scale fully integrated quantum photonic chip, which includes single-photon sources, filters, tunable quantum gates, and detectors.

42 ENGINEERING↗
DOE OSTI2023

Visible-telecom tunable dual-band optical isolator based on dynamic modulation in thin-film lithium niobate

Optical isolators are an essential component of photonic systems. Current integrated optical isolators have limited bandwidths due to stringent phase-matching conditions, resonant structures, or material absorption. Here, we demonstrate a wideband integrated optical isolator in thin-film lithium niobate photonics. We use dynamic standing-wave modulation in a tandem configuration to break Lorentz reciprocity and achieve isolation. We measure an isolation ratio of 15 dB and insertion loss below 0.5 dB for a continuous wave laser input at 1550 nm. In addition, we experimentally show that this isolator can simultaneously operate at visible and telecom wavelengths with comparable performance. Isolation bandwidths up to ∼100 nm can be achieved simultaneously at both visible and telecom wavelengths, limited only by the modulation bandwidth. Our device’s dual-band isolation, high flexibility, and real-time tunability can enable novel non-reciprocal functionality on integrated photonic platforms.

Shah, Manav↗
DOE OSTI2024

Design and fabrication of robust hybrid photonic crystal cavities

Abstract Heterogeneously integrated hybrid photonic crystal cavities enable strong light–matter interactions with solid state, optically addressable quantum memories. A key challenge to realizing high quality factor ( Q ) hybrid photonic crystals is the reduced index contrast on the substrate compared to suspended devices in air. This challenge is particularly acute for color centers in diamond because of diamond’s high refractive index, which leads to increased scattering loss into the substrate. Here, we develop a design methodology for hybrid photonic crystals utilizing a detailed understanding of substrate-mediated loss, which incorporates sensitivity to fabrication errors as a critical parameter. Using this methodology, we design robust, high-Q, GaAs-on-diamond photonic crystal cavities, and by optimizing our fabrication procedure, we experimentally realize cavities with Q approaching 30,000 at a resonance wavelength of 955 nm.

Abulnaga, Alex↗
DOE OSTI2025

GEAR-MC and Differential-Operator Methods Applied to Electron-Photon Transport in the Integrated TIGER Series

The sensitivity analysis algorithms that have been developed by the radiation transport community in multiple neutron transport codes, such as MCNP and SCALE, are extensively used by fields such as the nuclear criticality community. However, these techniques have seldom been considered for electron transport applications. In the past, the differential-operator method with the single scatter capability has been implemented in Sandia National Laboratories’ Integrated TIGER Series (ITS) coupled electron-photon transport code. This work is meant to extend the available sensitivity estimation techniques in ITS by implementing an adjoint-based sensitivity method, GEAR-MC, to strengthen its sensitivity analysis capabilities. To ensure the accuracy of this method being extended to coupled electron-photon transport, it is compared against the central-difference and differential-operator methodologies to estimate sensitivity coefficients for an experiment performed by McLaughlin and Hussman. Energy deposition sensitivities were calculated using all three methods, and the comparison between them has provided confidence in the accuracy of the newly implemented method. Unlike the current implementation of the differential-operator method in ITS, the GEAR-MC method was implemented with the option to calculate the energy-dependent energy deposition sensitivities, which are the sensitivity coefficients for energy deposition tallies to energy-dependent cross sections. The energy-dependent cross sections could be the cross sections for the material, elements in the material, or reactions of interest for the element. Further, these sensitivities were compared to the energy-integrated sensitivity coefficients and exhibited a maximum percentage difference of 2.15%.

42 ENGINEERING↗
DOE OSTI2025

Dual-polarization O-band silicon photonics transmitter with an integrated tunable laser, Mach-Zehnder modulators, and SOAs

Presented is an O-band silicon photonics dual-polarization coherent/IMDD modulator integrated with semiconductor optical amplifiers and tunable laser to enhance the short-reach link budget. The laser demonstrated output power >6 dBm and a <250 kHz linewidth over a 14 nm tuning range. Modulators paired with custom 64 Gbaud QPSK drivers exhibited improved analog link sensitivity compared to similar devices without integrated gain sections. They also demonstrated 53 Gbaud dual-polarization PAM4 operation when characterized with a linear driver and MaxLinear 100G/lane DSP board. Both optical links achieved BERs at the KP4-FEC threshold and overall transmitter assembly energy consumption <6.9 pJ/bit without any thermal control when at steady room temperatures.

Liu, Junqian (ORCID:0000000167337650)↗
DOE OSTI2023

Time-Sensitive Quantum Key Distribution (TSQKD)

This is the final report for the Time-Sensitive Quantum Key Distribution (TSQKD) project and summarizes the demonstration and longer-term field testing at an electric utility, EPB of Chattanooga, in Chattanooga, TN. The demonstration was held virtually (due to the COVID pandemic) and successfully executed the tests outlined in a prior report, “Task 10: Develop a QKD Time-Sensitive Networking Test Suite” submitted 9/30/2020. The portable test equipment explained in Task 10 and earlier task reports was tested at GE Research remotely connected with Qubitekk’s QKD equipment in San Diego, CA. Then the equipment was shipped to Qubitekk for physical integration with Qubitekk’s Quantum DataLoc™ Key Server 1570nm (http://qubitekk.com/products/qkd-for-industrial-control-systems-ics/). The portable test equipment was shipped from Qubitekk to EPB for demonstration and extended field testing. A summary of the demonstration and test results are described in this report. The demo and extended field test results are enabled by the NETCONF/YANG IEEE P1913 data management model developed as part of this project (Task 5). The NETCONF/YANG IEEE P1913 data management model demonstrated significant practical utility in providing a common means of monitoring and configuring the QKD system. All data in this report comes from the IEEE P1913 data management model.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2020

A heterogeneously integrated silicon photonic/lithium niobate travelling wave electro-optic modulator

Silicon photonics is a platform that enables densely integrated photonic components and systems and integration with electronic circuits. Depletion mode modulators designed on this platform suffer from a fundamental frequency response limit due to the mobility of carriers in silicon. Lithium niobate-based modulators have demonstrated high performance, but the material is difficult to process and cannot be easily integrated with other photonic components and electronics. In this manuscript, we simultaneously take advantage of the benefits of silicon photonics and the Pockels effect in lithium niobate by heterogeneously integrating silicon photonic-integrated circuits with thin-film lithium niobate samples. We demonstrate the most CMOS-compatible thin-film lithium niobate modulator to date, which has electro-optic 3 dB bandwidths of 30.6 GHz and half-wave voltages of 6.7 V×cm. These modulators are fabricated entirely in CMOS facilities, with the exception of the bonding of a thin-film lithium niobate sample post fabrication, and require no etching of lithium niobate.

42 ENGINEERING↗