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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 235 records · Page 13
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Oxygen vacancy contributions to the electrical stress response and endurance of ferroelectric hafnium zirconium oxide thin films

Despite its scalability and CMOS process compatibility, the limited endurance and sub-optimal stress response of ferroelectric Zr-substituted hafnia [(Hf,Zr)O 2 ] have been one of the key impediments toward its integration into practical device and technology applications. Here, using electrical measurements complemented by photoluminescence spectroscopy, we investigate the underlying mechanisms behind this behavior in 10 nm thick W/Hf 0.5 Zr 0.5 O 2 /W capacitors. Analyzing the evolution of leakage current with stress cycles and the spectroscopic response of the stress-induced leakage current, we attribute the behavior to defect levels, which lie at 0.6 eV from the conduction band edge of the ferroelectric. Photoluminescence spectroscopy, in turn, further corroborates the defect level's position within the bandgap while enabling its attribution to the presence of oxygen vacancies. Furthermore, this work helps to identify oxygen vacancies as the key factor responsible for the degraded endurance and stress response in (Hf,Zr)O 2 and subsequently motivates the exploration of methods to reduce the oxygen vacancy concentrations without destabilizing the ferroelectric orthorhombic phase.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Thickness scaling and ferroelectric switching in wurtzite structure zinc magnesium oxide thin films

This study reports the thickness scaling of sputtered ferroelectric Zn 0.61 Mg 0.39 O (ZMO) thin films down to 43 nm. Encapsulated IrO 2 /ZMO/Ir capacitors exhibited switchable polarizations exceeding 50 μC cm −2 and coercive fields that increased from 3.9 to 4.4 MV cm −1 as the thickness decreased. Switching kinetics are best described by the simultaneous non-linear nucleation and the growth model. Bimodal switching is prevalent at low thicknesses, with the fastest switching times measured to be approximately 400 ns. Device encapsulation made ZMO switching kinetics more abrupt, potentially due to changes in the concentration of atmosphere-induced defects such as hydroxides. These results demonstrate stable ferroelectricity and sub-microsecond switching in sub-50 nm wurtzite ZMO, highlighting its potential as a low-voltage ferroelectric for integrated nonvolatile memory applications.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Uniaxial Néel vector control in perovskite oxide thin films by anisotropic strain engineering

Antiferromagnetic (AF) thin films typically exhibit a multidomain state, and control of the AF Néel vector is challenging, as AF materials are robust to magnetic perturbations. In this paper, uniaxial Néel vector control is demonstrated by relying on anisotropic strain engineering of epitaxial thin films of the prototypical AF material LaFeO 3 (LFO). Orthorhombic (011)- and (101)-oriented DyScO 3 , GdScO 3 , and NdGaO 3 substrates are used to engineer different anisotropic in-plane strain states. The anisotropic in-plane strain stabilizes structurally monodomain monoclinic LFO thin films. The uniaxial Néel vector is found along the tensile strained b axis, contrary to bulk LFO having the Néel vector along the shorter a axis, and no magnetic domains are found. Hence, anisotropic strain engineering is a viable tool for designing unique functional responses, further enabling AF materials for mesoscopic device technology.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Orientational analysis of atomic pair correlations in nanocrystalline indium oxide thin films

The application of grazing-incidence total X-ray scattering (GITXS) for pair distribution function (PDF) analysis using >50 keV X-rays from synchrotron light sources has created new opportunities for structural characterization of supported thin films with high resolution. Compared with grazing-incidence wide-angle X-ray scattering, which is only useful for highly ordered materials, GITXS/PDFs expand such analysis to largely disordered or nanostructured materials by examining the atomic pair correlations dependent on the direction relative to the surface of the supporting substrate. A characterization of nanocrystalline In 2 O 3 -derived thin films is presented here with in-plane-isotropic and out-of-plane-anisotropic orientational ordering of the atomic structure, each synthesized using different techniques. The atomic orientations of such films are known to vary based on the synthetic conditions. Here, an azimuthal orientational analysis of these films using GITXS with a single incident angle is shown to resolve the markedly different orientations of the atomic structures with respect to the planar support and the different degrees of long-range order, and hence, the terminal surface chemistries. It is anticipated that orientational analysis of GITXS/PDF data will offer opportunities to extend structural analyses of thin films by providing a means to qualitatively determine the major atomic orientation within nanocrystalline and, eventually, non-crystalline films.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Impact of high-power impulse magnetron sputtering pulse width on the nucleation, crystallization, microstructure, and ferroelectric properties of hafnium oxide thin films

The impact of the high-power impulse magnetron sputtering (HiPIMS) pulse width on the crystallization, microstructure, and ferroelectric properties of undoped HfO 2 films is investigated. HfO 2 films were sputtered from a hafnium metal target in an Ar/O 2 atmosphere, varying the instantaneous power density by changing the HiPIMS pulse width with fixed time-averaged power and pulse frequency. The pulse width is shown to affect the ion-to-neutral ratio in the depositing species with the shortest pulse durations leading to the highest ion fraction. In situ x-ray diffraction measurements during crystallization demonstrate that the HiPIMS pulse width impacts nucleation and phase formation, with an intermediate pulse width of 110 μ s stabilizing the ferroelectric phase over the widest temperature range. Although the pulse width impacts the grain size with the lowest pulse width resulting in the largest grain size, the grain size does not strongly correlate with the phase content or ferroelectric behavior in these films. In conclusion, these results suggest that precise control over the energetics of the depositing species may be beneficial for forming the ferroelectric phase in this material.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Dynamic asymmetric strain imprinted into substrates by an oxide thin film

In film-substrate systems, the substrate role is often considered to be limited to providing static mechanical constraints. Dynamic film-substrate interactions when a structural change in the film modifies the substrate are generally disregarded. Here, using combined x-ray and electron microscopies, we observed that an electrically induced filament in a vanadium dioxide film created strong asymmetric strain in an underlying sapphire substrate. This asymmetric substrate strain fed back into the film and defined the filament expansion direction, revealing the importance of film-substrate dynamic interactions in determining film functionality. Furthermore, the strain imprint propagated at least tens of micrometers deep into the substrate, exceeding the film thickness by more than 200-fold, potentially enabling substrate functionalization as an active mechanical coupling media in three-dimensional integrated microelectronic architectures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS2003

Microchemical and Gaseous Sensors Using Carbon Nanotubes and MEMS Fabrication Technology

The objective of this research is to use a combination of carbon nanotubes and silicon-based microfabrication and micromachining processes to produce unique micro-sized chemical and gaseous sensors. Polished quartz substrate is used. Interdigitated structure is used for the sensing elements. Metallic catalysts for the growth of the carbon nanotube include copper, iron, nickel, and cobalt. Various thicknesses of the metallic catalysts are used in this study varying between 5 to 20 microns. Depositing of the metallic catalyst is accomplished using an ion-beam sputtering thin film technique and a shadow mask. Single wall carbon nanotubes are successfully formed over the metallic catalyst layer. Preliminary measurements of the carbon nanotubes show this nanotube contained film over the sensing elements which had a resistance value of 400 ohms at room temperature. This is a more conductive film comparing to metal oxide films, such as SnO2 or ZnO, that are now widely used in gaseous sensor research. Evaluation of the carbon nanotube film for potential gaseous sensing will be carried out.

Liu, Chung-Chiun↗
NASA NTRS1990

Memory switches based on metal oxide thin films

MnO.sub.2-x thin films (12) exhibit irreversible memory switching (28) with an OFF/ON resistance ratio of at least about 10.sup.3 and the tailorability of ON state (20) resistance. Such films are potentially extremely useful as a connection element in a variety of microelectronic circuits and arrays (24). Such films provide a pre-tailored, finite, non-volatile resistive element at a desired place in an electric circuit, which can be electrically turned OFF (22) or disconnected as desired, by application of an electrical pulse. Microswitch structures (10) constitute the thin film element, contacted by a pair of separate electrodes (16a, 16b) and have a finite, pre-selected ON resistance which is ideally suited, for example, as a programmable binary synaptic connection for electronic implementation of neural network architectures. The MnO.sub.2-x microswitch is non-volatile, patternable, insensitive to ultraviolet light, and adherent to a variety of insulating substrates (14), such as glass and silicon dioxide-coated silicon substrates.

Ramesham, Rajeshuni↗
DOE OSTI2022

Effect of Applied Stress on the Selective Oxidation of Alloy 600 Exposed to PWR Primary Water and Rhines Pack Environments

A mechanistic understanding of corrosion and oxidation processes is crucial to ensure long-term resistance to stress corrosion cracking of Ni-base structural alloys in pressurized water reactor (PWR) primary and secondary systems. Aqueous corrosion of Ni-base alloys under PWR primary water conditions was previously compared to gaseous oxidation with comparable oxygen potentials. However, those studies considered only stress-free conditions, which removes a critical parameter for understanding stress corrosion behaviors. A significant knowledge gap exists for the role of applied stresses on selective internal oxidation in gaseous environments. A micro-4-point-bend jig was designed to facilitate stress in a Rhines Pack set-up. Selective oxidation at different stress and strain conditions was investigated in a series of Rhines Pack experiments for Alloy 600. Focused ion beam milling enabled the extraction of site-specific specimens containing selected high-energy grain boundaries from tensile and compressive stress regions. Analytical transmission electron microscopy was employed to analyze the microstructure and chemical composition of the resulting oxides. Protective surface oxide films and selective intergranular oxides were observed at different conditions. The implications of these fundamental differences are discussed relative to intergranular attack and stress corrosion cracking mechanisms in PWR primary water.

stress, 4-point-bend, selective oxidation, Alloy 6↗
NASA NTRS1974

Metallic oxide switches using thick film technology

Metallic oxide thick film switches were processed on alumina substrates using thick film technology. Vanadium pentoxide in powder form was mixed with other oxides e.g., barium, strontium copper and glass frit, ground to a fine powder. Pastes and screen printable inks were made using commercial conductive vehicles and appropriate thinners. Some switching devices were processed by conventional screen printing and firing of the inks and commercial cermet conductor terminals on 96% alumina substrates while others were made by applying small beads or dots of the pastes between platinum wires. Static, and dynamic volt-ampere, and pulse tests indicate that the switching and self-oscillatory characteristics of these devices could make them useful in memory element, oscillator, and automatic control applications.

Patel, D. N.↗
DOE OSTI2024

Intermittent oxidation kinetics and metal/oxide interfacial undulation

The phenomenon of oxygen-adsorption-induced surface restructuring is widespread across various metal-oxygen systems, yet its impact on initiating bulk oxide formation remains largely unexplored. In this study, through in-situ atomic-resolution electron microscopy observations of surface oxidation of Cu(110) and Cu 85 Au 15 (110), we unveil intermittent oxide-film growth modulated by oxygen-induced surface restructuring. This modulation is evidenced by repeated pinning of Cu 2 O growth front at isolated Cu columns of the c(6×2)-O reconstruction, owing to required long-range diffusion of Cu and O atoms to the Cu 2 O growth front. We reveal that Cu vacancies, generated at the Cu 2 O growth front, are injected into the Cu 2 O/Cu interface, inducing hill-and-valley undulation of the Cu 2 O film. In contrast, atomic vacancies produced during the Cu 85 Au 15 (110) oxidation preferentially migrate into interfaces between Au-rich and Au-poor regions in the bulk, resulting in a flat and adherent Cu 2 O film. These findings demonstrate the critical role of oxygen-induced surface restructuring in modulating oxide-film-growth kinetics and manipulability of the fate of injected vacancies by alloying, thereby offering insights applicable to a broader range of metal-oxygen systems for fine-tuning oxidation kinetics and enhancing oxide/metal interfacial adhesion.

25 ENERGY STORAGE↗
DOE OSTI2021

Understanding the Electronic Structure Evolution of Epitaxial LaNi1-xFexO3 Thin Films for Water Oxidation

Rare earth nickelates including LaNiO3 are promising catalysts for water electrolysis to produce oxygen gas. Recent studies report that Fe substitution for Ni can significantly enhance the oxygen evolution reaction (OER) activity of LaNiO3. However, the role of Fe in increasing activity remains ambiguous, with potential origins both structural and electronic in nature. Here, by utilizing a series of epitaxial LaNi1-xFexO3 thin films synthesized by oxygen-assisted molecular beam epitaxy, we report that Fe substitution tunes the oxidation state of Ni in LaNi1-xFexO3 and a volcano-like OER trend is observed with x = 0.375 being the most active. Spectroscopy and ab initio modeling reveal that the high-valent Fe3+? B-site cationic species strongly increases the transition metal (TM) 3d bandwidth via Ni-O-Fe bridges and enhances the TM 3d-O 2p hybridization, boosting the OER activity. Furthermore, pH-dependent electrochemical measurements suggest that the OER on LaNi1-xFexO3 involves a lattice oxygen-mediated mechanism.

LaNiO3, Fe substitution, charge transfer, lattice ↗